-
公开(公告)号:US10651001B2
公开(公告)日:2020-05-12
申请号:US16312565
申请日:2017-03-16
Applicant: MEIDENSHA CORPORATION
Inventor: Daizo Takahashi , Michihiro Hatanaka
Abstract: An emitter (3) and a target (7) are arranged so as to face each other in a vacuum chamber (1), and a guard electrode (5) is provided at an outer circumferential side of an electron generating portion (31) of the emitter (3). The emitter (3) is supported movably in both end directions of the vacuum chamber (1) by the emitter supporting unit (4) having a movable body (40). The emitter supporting unit (4) is operated by an operating unit (6) connected to the emitter supporting unit (4). By operating the emitter supporting unit (4) by the operating unit (6), a distance between the electron generating portion (31) of the emitter (3) and the target (7) is changed, and a position of the emitter (3) is fixed at an arbitrary distance, then field emission is performed with the position of the emitter (3) fixed.
-
公开(公告)号:US10573481B1
公开(公告)日:2020-02-25
申请号:US16203510
申请日:2018-11-28
Applicant: NuFlare Technology, Inc. , NuFlare Technology America, Inc.
Inventor: Victor Katsap
Abstract: An electron emission apparatus, an electron gun, and a method of fabrication of the electron gun are provided. The electron gun includes a cathode, a Wehnelt, and an anode. The cathode is configured to provide an electron beam. The Wehnelt has a bore. The bore is configured to pass the electron beam. The anode is disposed proximate to the cathode. The diameter of the bore of the Wehnelt and the offset between the Wehnelt and the cathode satisfy a predetermined dimensional relationship. The predetermined dimensional relationship is at least a function of a diameter of the bore of the anode and a distance between the Wehnelt and the anode.
-
公开(公告)号:USRE47767E1
公开(公告)日:2019-12-17
申请号:US14757799
申请日:2015-12-23
Applicant: Alcatel-Lucent
Inventor: Aref Chowdhury , Hock Ng , Richart Elliott Slusher
Abstract: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.
-
公开(公告)号:US20190304732A1
公开(公告)日:2019-10-03
申请号:US16369004
申请日:2019-03-29
Applicant: Sharp Kabushiki Kaisha
Inventor: Kenichiro NAKAMATSU , Tokio TAGUCHI , Kohji SHINKAWA , Mai TAKASAKI , Tadashi IWAMATSU
IPC: H01J3/02 , H01J9/02 , H01L21/768 , H01L21/02
Abstract: A method of producing an electron emitting device includes: step A of providing an aluminum substrate or providing an aluminum layer supported by a substrate; step B of anodizing a surface of the aluminum substrate or a surface of the aluminum layer to form a porous alumina layer having a plurality of pores; step C of applying Ag nanoparticles in the plurality of pores to allow the Ag nanoparticles to be supported in the plurality of pores; step D of, after step C, applying a dielectric layer-forming solution onto substantially the entire surface of the aluminum substrate or the aluminum layer, the dielectric layer-forming solution containing, in an amount of not less than 7 mass % but less than 20 mass %, a polymerization product having siloxane bonds; step E of, after step D, at least reducing a solvent contained in the dielectric layer-forming solution to form the dielectric layer; and step F of forming an electrode on the dielectric layer.
-
公开(公告)号:US10398018B2
公开(公告)日:2019-08-27
申请号:US15691685
申请日:2017-08-30
Applicant: FAR-TECH, INC.
Inventor: David Newsham
Abstract: An electron acceleration system includes a first RF cavity, and a second RF cavity whose center is located at a distance not more than 1.5 inch from the center of the first RF cavity, along an axis. The first RF cavity has a length less than about 0.25 inches. The on-axis coupling between the first and second RF cavities along the axis, which is primarily electric, is cancelled out by an off-axis coupling between the RF cavities off the axis, which is primarily magnetic. In this way, the net RF coupling between the RF cavities is zero. The phase and amplitude of the first and second RF cavities are each independently adjustable.
-
公开(公告)号:US10380388B2
公开(公告)日:2019-08-13
申请号:US16047155
申请日:2018-07-27
Applicant: Xyleco, Inc.
Inventor: Marshall Medoff
IPC: C08J7/12 , C08B15/00 , C12P19/00 , D21H21/48 , D21H25/04 , G01N33/34 , G06K5/00 , G06K5/02 , G21K5/00 , G03C11/02 , B32B29/00 , C12M1/00 , H01J3/02 , H01J3/04
Abstract: Methods of marking paper products and marked paper products are provided. Some methods include irradiating the paper product to alter the functionalization of the paper.
-
公开(公告)号:US20190198279A1
公开(公告)日:2019-06-27
申请号:US16329688
申请日:2017-07-24
Applicant: PEKING UNIVERSITY
Inventor: Xianlong WEI , Gongtao WU
Abstract: A tunneling electro source, an array thereof and methods for making the same are provided. The tunneling electron source is a surface tunneling micro electron source having a planar multi-region structure. The tunneling electron source includes an insulating substrate, and two conductive regions and one insulating region arranged on a surface of the insulating substrate. The insulating region is arranged between the two conductive regions and abuts on the two conductive regions. Minimum spacing between the two conductive regions, which equals to a minimum width of the insulating region, is less than 100 nm.
-
公开(公告)号:US10242836B2
公开(公告)日:2019-03-26
申请号:US14385503
申请日:2013-03-14
Applicant: NANOX IMAGING PLC
Inventor: Koichi Iida , Hidenori Kenmotsu , Jun Yamazaki , Hitoshi Masuya
IPC: H01J35/06 , H01J35/14 , G01N23/046 , H01J1/304 , H01J29/46 , H01J31/12 , G01T1/161 , H01J3/02 , H01J3/14
Abstract: The disclosure relates to an image capture device comprising an electron receiving construct and an electron emitting construct, and further comprising an inner gap providing an unobstructed space between the electron emitting construct and the electron receiving construct. The disclosure further relates to an x-ray emitting device comprising an x-ray emitting construct and an electron emitting construct, said x-ray emitting construct comprising an anode, the anode being an x-ray target, wherein the x-ray emitting device may comprise an inner gap providing an unobstructed space between the electron emitting construct and the x-ray emitting construct. The disclosure further relates to an x-ray imaging system comprising an image capture device and an x-ray emitting device.
-
公开(公告)号:US20190057829A1
公开(公告)日:2019-02-21
申请号:US16027200
申请日:2018-07-03
Applicant: Varex Imaging Corporation
Inventor: Chris Ferrari , Thomas M. Bemis
CPC classification number: H01J3/027 , H01J3/022 , H01J19/48 , H01J19/50 , H01J19/54 , H01J23/04 , H01J23/06
Abstract: Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, comprising an external base forming at least a portion of the enclosure; an internal base within the enclosure; and at least one thermal dissipative strap assembly, comprising: an internal base thermal conductive base in contact with the internal base, an external base thermal conductive base in contact with the external base, and a flexible thermal dissipative strap coupling the internal base thermal conductive base to the external base thermal conductive base.
-
公开(公告)号:US10032595B2
公开(公告)日:2018-07-24
申请号:US15056479
申请日:2016-02-29
Applicant: General Electric Company
Inventor: Sergio Lamaitre
Abstract: In the present invention, a cathode assembly for an X-ray tube is provided including a cathode cup, a pair of emitters disposed within the cup and each configured to emit an electron beam therefrom and an electrode spaced from the pair of emitters and configured to affect the shape and/or intensity of the electron beams emitted by the pair of emitters. The electrode includes a rod extending across a central aperture defined within the electrode that enables the electrode to grid or focus the electron beam or beams emitted from the emitters using a bias voltage between +10 kV and −10 kV.
-
-
-
-
-
-
-
-
-