公开(公告)号：US06326618B1

公开(公告)日：2001-12-04

申请号：US09347498

申请日：1999-07-02

Applicant: Brittin C. Kane ,  John M. McIntosh

Inventor： Brittin C. Kane ,  John M. McIntosh

IPC: H01J3700

CPC classification number: G01B15/04 ,  H01J2237/2814

Abstract: A method of analyzing a patterned feature formed on a semiconductor layer is disclosed. The patterned feature is scanned to generate an amplitude modulated waveform signal of the line width. This waveform signal is processed for calculating the scale and shape of the patterned feature based on the profile of the amplitude modulated waveform signal. The calculated scale and shape of the patterned feature are compared to a template of a normal patterned feature having the desired shape and scale. The template is derived from scanning a normal patterned feature on a known sample.

Abstract translation: 公开了分析形成在半导体层上的图案特征的方法。 扫描图案特征以产生线宽的幅度调制波形信号。 处理该波形信号，以便根据幅度调制波形信号的轮廓来计算图案化特征的刻度和形状。 将所计算的图案特征的尺度和形状与具有所需形状和尺度的正常图案特征的模板进行比较。 模板从扫描已知样品上的正常图案特征得到。

公开(公告)号：US06259093B1

公开(公告)日：2001-07-10

申请号：US09201182

申请日：1998-11-30

Applicant: Shigeru Wakiyama ,  Naohiko Fujino

Inventor： Shigeru Wakiyama ,  Naohiko Fujino

IPC: H01J3700

CPC classification number: G01Q30/02 ,  G01Q30/025

Abstract: A system capable of detecting the presence and location of foreign matter on a sample includes a beam light applying system for projecting a beam of light onto a sample surface, an optical microscope for receiving light reflected from the sample surface in response to application of the beam light and for confirming the existence and location of foreign matter on the sample surface by observing scattering of the applied beam light by the foreign matter, and a polarizing element for polarizing light in such a manner that light scattered by a regular pattern on the sample is reduced by the polarization and light scattered by foreign matter on the sample is not reduced by the polarization. The system may be combined with a probe microscope for detecting a characteristic of the sample by monitoring an affect on a probe caused by the sample surface.

Abstract translation: 能够检测样品上的异物的存在和位置的系统包括用于将光束投射到样品表面上的光束照射系统，用于响应于光束的应用而接收从样品表面反射的光的光学显微镜 并且通过观察外来物质施加的光束的散射来确认样品表面上的异物的存在和位置，以及用于偏振光的偏振元件，使得通过样品上的规则图案散射的光是 减少的偏振光和散射的异物在样品上不会被极化所减弱。 该系统可以与探针显微镜组合，用于通过监测由样品表面引起的探针的影响来检测样品的特性。

公开(公告)号：US06207959B1

公开(公告)日：2001-03-27

申请号：US09294995

申请日：1999-04-20

Applicant: Shu Satoh ,  Theodore H. Smick

Inventor： Shu Satoh ,  Theodore H. Smick

IPC: H01J3700

CPC classification number: H01J37/3171 ,  H01J2237/20228

Abstract: An ion implanter for sequentially processing single semiconductor wafers includes a scanning arm extending along a first axis. A wafer holder is mounted on a free end of the arm so as to be rotatable about a second axis centered on and perpendicular to the plane of the wafer. The wafer can be scanned through an ion beam by reciprocating the arm transversely of the first axis. A rotary motor is mounted in the scanning arm near the free end with its axis of rotation parallel to the first axis and perpendicular to the second axis. A right angle rotary drive connects the motor to the wafer holder. A hard stop is provided on the motor to prevent the wafer from being rotated by more than 360°. Connections to the wafer on the holder are provided by a flexible circuit coiled about the second axis. The scanning mechanism can itself be rotated about an axis parallel to the arm so as to tilt the scanning direction, the wafer holder is itself further rotatable about the arm axis relative to the scanning mechanism. This enables the wafer to be rotated to the horizontal when the mechanical scanning mechanism holds the arm with the wafer above the beam.

Abstract translation: 用于顺序处理单个半导体晶片的离子注入机包括沿着第一轴延伸的扫描臂。 晶片保持器安装在臂的自由端上，以便围绕中心于晶片平面的第二轴可旋转。 可以通过横跨第一轴线的臂往复移动离子束来扫描晶片。 旋转马达安装在自由端附近的扫描臂中，其旋转轴线平行于第一轴线并垂直于第二轴线。 直角旋转驱动器将电机连接到晶片架。 在电机上设置了一个硬停止，以防止晶片旋转超过360°。 通过围绕第二轴线卷绕的柔性电路提供与支架上的晶片的连接。 扫描机构本身可以围绕平行于臂的轴线旋转以便使扫描方向倾斜，晶片保持器本身可相对于扫描机构围绕臂轴线进一步旋转。 这使得当机械扫描机构将晶片保持在晶片上方时，晶片能够旋转到水平线。

公开(公告)号：US06833552B2

公开(公告)日：2004-12-21

申请号：US10694162

申请日：2003-10-27

Applicant: Donald W. Berrian

Inventor： Donald W. Berrian

IPC: H01J3700

CPC classification number: H01J37/3171 ,  H01J2237/20228 ,  H01J2237/31703

Abstract: A method is provided for uniformly implanting a wafer with an ion beam. The wafer is generally of the type with a surface area in the form of a disk with a diameter and center. The ion beam is first formed as an elongated shape incident on the wafer, the shape having a length along a first axis smaller than the diameter, and a width shorter than the length along a second axis. Next, the wafer is translated at a variable translational velocity in a direction substantially parallel with the second axis. The wafer is also rotated substantially about the center at a rotational velocity. These movements are made such that the ion beam implants the wafer with substantially uniform dose across the surface area of the wafer. The wafer is preferably translated such that the ion beam implants the wafer from one side of the wafer, across the surface area of the wafer, and through another side of the wafer, in a selected velocity versus position profile. The wafer is also tilted while rotating such that the ion beam implants the surface area at a substantially constant angle relative to a crystal axis of the wafer. The wafer can also be translated in a direction substantially parallel to the ion beam such that the ion beam implants the surface area with a substantially constant spot size. The methods of the invention also include determining beam current density of the ion beam, and adjusting the variable translational velocity, and rotational velocity, as a function of the current density.

Abstract translation: 提供了用离子束均匀地注入晶片的方法。 晶片通常是具有直径和中心的盘形式的表面积的类型。 离子束首先形成为入射在晶片上的细长形状，该形状具有沿第一轴线小于直径的长度，并且其宽度比沿第二轴线的长度短。 接下来，以与第二轴基本平行的方向以可变的平移速度平移晶片。 晶片也以旋转速度基本上围绕中心旋转。 这些运动被制成使得离子束在晶片的表面区域上以基本均匀的剂量注入晶片。 优选地将晶片平移，使得离子束以晶片的一侧，跨过晶片的表面区域，并以所选择的速度与位置分布，通过晶片的另一侧，从晶片的一侧注入晶片。 晶片也在旋转时倾斜，使得离子束相对于晶片的晶轴以基本恒定的角度注入表面积。 晶片也可以在基本上平行于离子束的方向上平移，使得离子束以基本恒定的光斑尺寸注入表面积。 本发明的方法还包括确定离子束的束电流密度，以及根据电流密度调整可变平移速度和旋转速度。

公开(公告)号：US06781123B2

公开(公告)日：2004-08-24

申请号：US10396559

申请日：2003-03-26

Applicant: Yukiharu Okubo

Inventor： Yukiharu Okubo

IPC: H01J3700

CPC classification number: H01J37/1477

Abstract: An inspection method using an electron beam. Emitted charged particles from an electron gun located inside a primary column are accelerated to form a primary beam. A cross section of the primary beam is shaped a desired shape by a primary optical system located inside the primary column. A trajectory of the primary beam is deflected using a primary deflector located inside the primary column. A sample is illuminated using the primary beam, the sample being on a stage to which a retarding voltage is applied. At least one of secondary electrons, reflected electrons or backwardly scattered electrons that are emerging from the sample on the stage are accelerated toward a second column to form a secondary beam. A trajectory of the secondary beam is deflected using a secondary deflector located inside the secondary column. The secondary beam is guided to a detector located inside the secondary column.

Abstract translation: 使用电子束的检查方法。 来自位于主列内部的电子枪的带电粒子被加速以形成主光束。 主梁的横截面通过位于主塔内部的主光学系统成型为期望的形状。 主梁的轨迹使用位于主塔内部的主偏转器进行偏转。 使用主光束照射样品，样品位于施加有延迟电压的台上。 从载物台上的样品出现的二次电子，反射电子或向后散射的电子中的至少一个被加速朝向第二列形成次级光束。 使用位于次级柱内部的次级偏转器使次级光束的轨迹偏转。 次级束被引导到位于次级柱内的检测器。

公开(公告)号：US06777695B2

公开(公告)日：2004-08-17

申请号：US10299935

申请日：2002-11-19

Applicant: Gary L. Viviani

Inventor： Gary L. Viviani

IPC: H01J3700

CPC classification number: H01J37/3171 ,  H01J37/1474

Abstract: Methods and apparatus are provided for ion implantation of a workpiece. The apparatus includes an ion beam generator for generating an ion beam, a deflection device for deflecting the ion beam to produce a deflected ion beam, and a drive device for rotating the deflection device about an axis of rotation to thereby cause the deflected ion beam to rotate about the axis of rotation and to produce a rotating ion beam. The apparatus may include a controller for controlling the deflection and/or the rotation of the ion beam to produce a desired distribution of the ion beam over the surface of the workpiece. The apparatus may further include an angle compensation device for causing the rotating ion beam to have a substantially constant angle of incidence on the workpiece.

公开(公告)号：US06752008B1

公开(公告)日：2004-06-22

申请号：US10094148

申请日：2002-03-07

Applicant: Victor B. Kley

Inventor： Victor B. Kley

IPC: H01J3700

CPC classification number: G01Q10/06 ,  Y10S977/851 ,  Y10S977/852

Abstract: Information is collected from a region of interest using a scanning probe microscope having a tip by moving the tip along at least one predefined path extending from a center location to a peripheral location in the region of interest and collecting information using the tip at a plurality of sample points along the at least one predefined path. The predefined path may be based on a radial line defined between the center location and the peripheral location, and may follow a zig-zag, sinusoidal, constant-curve, rectangular trajectory generally tracking the radial line.

Abstract translation: 使用具有尖端的扫描探针显微镜从感兴趣的区域收集信息，所述扫描探针显微镜通过沿着从感兴趣区域的中心位置延伸到周边位置的至少一个预定路径移动尖端，并且使用尖端在多个 沿着至少一个预定路径的采样点。 预定义的路径可以基于在中心位置和周边位置之间限定的径向线，并且可以遵循通常跟踪径向线的锯齿形，正弦曲线，恒定曲线的矩形轨迹。

公开(公告)号：US06734426B2

公开(公告)日：2004-05-11

申请号：US10167538

申请日：2002-06-12

Applicant: Ryuichi Matsuzaki ,  Akihiko Honma ,  Yukihiro Sato

Inventor： Ryuichi Matsuzaki ,  Akihiko Honma ,  Yukihiro Sato

IPC: H01J3700

CPC classification number: G01Q70/04

Abstract: A probe scanning device has a first tubular member extending in a z direction. A second tubular member has a rear end portion extending into the first tubular member to define a space between an inner peripheral surface portion of the first tubular member and an outer peripheral surface portion of the second tubular member. A probe tip is mounted on a front end portion of the second tubular member. A viscous material is disposed in the space between the first tubular member and the second tubular member. A moving mechanism reciprocally moves the first tubular member in an xy direction, and a voice coil motor drives the second tubular member towards the first tubular member in the z direction. A drive mechanism has a coarse adjustment mode for coarsely moving the probe tip toward a surface of a sample and a measurement mode for fine movement of the probe tip in the z direction to maintain a given relationship between relative positions of the probe tip and the sample surface after coarse movement. A connecting mechanism selectively integrally connects the first tubular member and the second tubular member to one another.

Abstract translation: 探针扫描装置具有沿z方向延伸的第一管状构件。 第二管状构件具有延伸到第一管状构件中的后端部分，以在第一管状构件的内周表面部分和第二管状构件的外周表面部分之间限定空间。 探针尖端安装在第二管状构件的前端部分上。 粘性材料设置在第一管状构件和第二管状构件之间的空间中。 移动机构使第一管状部件沿xy方向往复移动，音圈马达在z方向上朝第一管状部件驱动第二管状部件。 驱动机构具有用于将探针尖端朝向样品的表面粗略移动的粗调方式和用于在z方向上精细移动探针尖端的测量模式，以保持探针尖端和样品的相对位置之间的给定关系 表面粗动。 连接机构选择性地将第一管状部件和第二管状部件一体地连接在一起。

公开(公告)号：US06710359B2

公开(公告)日：2004-03-23

申请号：US09815484

申请日：2001-03-23

Applicant: Joseph C. Olson ,  Rosario Mollica

Inventor： Joseph C. Olson ,  Rosario Mollica

IPC: H01J3700

CPC classification number: G21K1/08 ,  H01J37/304 ,  H01J2237/3045 ,  H01J2237/31701

Abstract: Methods and apparatus are provided for adjusting the profile of a scanned ion beam. The spatial distribution of the unscanned ion beam is measured. The ion beam is scanned at an initial scan speed, and the beam profile of the scanned ion beam is measured. If the measured beam profile is not within specification, a scan speed correction that produces a desired profile correction is determined using a calculation which is based on the spatial distribution of the unscanned ion beam. The scan speed correction may be determined by convolving a candidate scan speed correction with the spatial distribution of the unscanned ion beam to produce a result and determining if the result is sufficiently close to the desired profile correction. A multi-dimensional search algorithm may be used to select the candidate scan speed correction. The ion beam is scanned at a corrected scan speed, which is based on the initial scan speed and the scan speed correction, to produce corrected beam profile.

Abstract translation: 提供了用于调整扫描离子束的轮廓的方法和装置。 测量未扫描离子束的空间分布。 以初始扫描速度扫描离子束，并测量扫描离子束的光束分布。 如果测量的光束轮廓不在规定范围内，则使用基于未扫描的离子束的空间分布的计算来确定产生期望的轮廓校正的扫描速度校正。 可以通过将候选扫描速度校正与未扫描离子束的空间分布进行卷积以产生结果并确定结果是否足够接近所需轮廓校正来确定扫描速度校正。 可以使用多维搜索算法来选择候选扫描速度校正。 以基于初始扫描速度和扫描速度校正的校正扫描速度扫描离子束，以产生校正的波束分布。

公开(公告)号：US06583412B2

公开(公告)日：2003-06-24

申请号：US09811374

申请日：2001-03-17

Applicant: Clayton C. Williams

Inventor： Clayton C. Williams

IPC: H01J3700

CPC classification number: G01Q60/14 ,  Y10S977/732 ,  Y10S977/86 ,  Y10S977/861 ,  Y10S977/873 ,  Y10S977/875 ,  Y10S977/881

Abstract: The present invention develops a new type of SPM, a scanning tunneling charge transfer microscope (STCTM). The STCTM is capable of first, detecting the transfer of an ultrasmall amount of charge (single electrons) or current (attoampere) into or out from a surface with atomic resolution and second, simultaneously measuring the electronic response of that surface to the transferred charge. This dual capability can be achieved by appropriately combining the virtues of the STM and a modified EFM. The STM provides the atomic resolution for the charge transfer, while the modified EFM provides the sub-electronic charge sensitivity for the current and charge detection. The STCTM, with sensitivity many orders of magnitude better than with SPM technology currently available, can be used to characterize the properties of molecules, ultrathin oxides, insulator surfaces, and clusters on insulators with atomic resolution.