公开(公告)号：US3078151A

公开(公告)日：1963-02-19

申请号：US84236459

申请日：1959-09-25

申请人： SIEMENS AG

发明人： RUDOLF KAPPELMEYER

IPC分类号： C30B15/10 ,  C30B15/24

CPC分类号： C30B15/24 ,  C30B15/10 ,  Y10S117/90 ,  Y10S148/107 ,  Y10T117/1036 ,  Y10T117/1052

公开(公告)号：US11891721B2

公开(公告)日：2024-02-06

申请号：US17338152

申请日：2021-06-03

申请人： Linton Kayex Technology Co., Ltd

发明人： Jiaqi Yin ,  John A. Reese ,  Joel C. Stefl

IPC分类号： C30B35/00 ,  C30B15/32 ,  C30B15/14 ,  C30B15/24 ,  C30B15/10 ,  C30B15/30

CPC分类号： C30B35/002 ,  C30B15/10 ,  C30B15/14 ,  C30B15/24 ,  C30B15/30 ,  C30B15/32

摘要： A crystal growing system can include a spool-balanced seed lift assembly for rotating and lifting a seed crystal supported by a cable. The seed crystal is supported along and rotated about a lift axis. The spool-balanced seed lift assembly includes a spool that rotates on, and has a center of gravity along, an axis that intersects the lift axis. As the spool rotates, it moves axially along its axis to avoid displacing the cable from the lift axis. A guide pulley positioned below the spool is used to direct the cable between the lift axis and a spool-tangent axis to minimize displacement of the cable as it is raised and rotated.

公开(公告)号：US10415151B1

公开(公告)日：2019-09-17

申请号：US14227006

申请日：2014-03-27

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Peter L. Kellerman ,  Frederick M. Carlson ,  David Morrell ,  Ala Moradian ,  Nandish Desai

IPC分类号： C30B15/24 ,  C30B15/22

摘要： An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

公开(公告)号：US09677193B2

公开(公告)日：2017-06-13

申请号：US14242566

申请日：2014-04-01

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Peter L. Kellerman ,  Gregory D. Thronson ,  Dawei Sun

IPC分类号： C30B15/22 ,  C30B35/00 ,  C30B15/06 ,  C30B28/10 ,  C30B29/06 ,  C30B29/52 ,  C30B29/64 ,  C30B9/00 ,  C30B11/00 ,  C30B15/00 ,  C30B15/24 ,  C30B15/34

CPC分类号： C30B35/00 ,  C30B9/00 ,  C30B11/00 ,  C30B15/00 ,  C30B15/002 ,  C30B15/06 ,  C30B15/22 ,  C30B15/24 ,  C30B15/34 ,  C30B28/10 ,  C30B29/06 ,  C30B29/52 ,  C30B29/64 ,  Y10T117/1048 ,  Y10T117/1092

摘要： In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.

公开(公告)号：US20100288186A1

公开(公告)日：2010-11-18

申请号：US12467753

申请日：2009-05-18

申请人： Christopher A. Bang

发明人： Christopher A. Bang

IPC分类号： C30B15/24 ,  C30B15/10

CPC分类号： C30B15/24

摘要： Techniques are generally disclosed for forming crystalline bodies. An example system, device or method for forming crystalline bodies may include a crucible for containing molten crystalline material and a support for accommodating a seed on an end thereof, the support being movable along a translation axis in a pull direction to draw the seed crystal from the molten crystalline, thereby initiating growth of a crystalline body along a growth path. Further examples may include one or more nozzles configured to be coupled to a fluid source, the nozzles being positioned relative to the growth path for shaping the crystal body as the molten crystalline is pulled in the pull direction along the growth path.

摘要翻译： 通常公开了形成结晶体的技术。 用于形成结晶体的示例性系统，装置或方法可以包括用于容纳熔融结晶材料的坩埚和用于在其一端容纳种子的支撑件，所述支撑件沿着平行轴线在拉力方向上移动以将晶种从 熔融的晶体，从而引发晶体沿着生长路径的生长。 另外的实例可以包括被配置为耦合到流体源的一个或多个喷嘴，当沿着生长路径沿着拉伸方向拉动熔融晶体时，喷嘴相对于生长路径定位，用于成形晶体。

公开(公告)号：US20090188425A1

公开(公告)日：2009-07-30

申请号：US12420857

申请日：2009-04-09

申请人： Burkhard ALTEKRUGER ,  Stefan Henkel ,  Axel Vonhoff ,  Erich Tomzig ,  Dieter Knerer

发明人： Burkhard ALTEKRUGER ,  Stefan Henkel ,  Axel Vonhoff ,  Erich Tomzig ,  Dieter Knerer

IPC分类号： C30B15/24 ,  C30B15/30

CPC分类号： C30B15/32 ,  Y10S117/911 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8). The actuation of the latches (7) takes place with actuation means disposed stationarily in the apparatus.

摘要翻译： 拉伸装置和使用拉伸装置的切克劳斯基法可以拉伸特别重的晶体（5）的方法。 为此，晶体（5）的颈部（4）具有放大（10），在该放大部分（10）延伸支撑装置。 该装置包括闩锁（7），其从静止位置移动到闩锁（7）在放大部分（10）下方延伸的操作位置。 每个闩锁（7）被支撑在基体上，使得其可绕枢转轴线（8）旋转并且可以呈现两个稳定的位置，即静止位置和操作位置。 这些位置中的每一个由基体上的止挡限定。 当闩锁位于一个停止点上时，从颈部（4）观察的其重心位于枢转轴线（8）的另一侧。 当闩锁位于另一个挡块上时，重心位于枢转轴线（8）的这一侧。 闩锁（7）的致动通过固定地设置在该装置中的致动装置进行。

公开(公告)号：US06878202B2

公开(公告)日：2005-04-12

申请号：US10112700

申请日：2002-04-02

申请人： Masaya Ohnishi ,  Kenya Itani ,  Seiji Mizuniwa ,  Hiroshi Sasabe ,  Inao Fujisaki

发明人： Masaya Ohnishi ,  Kenya Itani ,  Seiji Mizuniwa ,  Hiroshi Sasabe ,  Inao Fujisaki

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B29/42 ,  H01L21/208 ,  C30B15/24

CPC分类号： C30B29/40 ,  C30B11/14 ,  C30B29/42 ,  C30B29/48

摘要： A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of +θ, wherein the offset angle θ is 2°≦θ≦55°.

摘要翻译： 一种用于生长化合物半导体单晶的方法，包括在具有位于下端的晶种的晶体生长容器中以向上升高的温度梯度冷却化合物半导体的原料熔体，从而从晶种向上生长单晶 晶体，晶体生长轴方向上的晶种的晶体取向为<100 +θ的偏移取向，其中偏移角θ为2°θ= 55°。

公开(公告)号：US6159283A

公开(公告)日：2000-12-12

申请号：US267214

申请日：1999-03-12

申请人： Isamu Harada ,  Michiaki Oda ,  Masaru Toyoshima ,  Toshinari Murai ,  Eiichi Iino

发明人： Isamu Harada ,  Michiaki Oda ,  Masaru Toyoshima ,  Toshinari Murai ,  Eiichi Iino

IPC分类号： G01N3/02 ,  G01N3/08 ,  C30B15/24

CPC分类号： G01N3/08 ,  G01N2203/0286 ,  Y10S117/911 ,  Y10T117/1068

摘要： Apparatus for measuring the mechanical strength of a neck portion of a silicon seed crystal used for growing a silicon crystal by the Czochralski method includes a seed chuck for holding the seed crystal of a test sample and an end of a wire hung from an upper hook. A crystal holder which holds the other end part of the test sample from below is tied to a lower hook with another wire to support the holder. The apparatus includes means for pulling the hook at a given rate, and measuring means for continuously measuring tensile load. Such apparatus and the method thereby provide accurate measurement of mechanical strength of the neck portion of the silicon seed crystal with good precision and reproducibility. A single crystal ingot is grown under conditions affording good balance of productivity and safety.

摘要翻译： 用于测量用于通过切克劳斯基法生长硅晶体的硅晶种的颈部的机械强度的装置包括用于保持测试样品的晶种和从上钩挂起的线的末端的种子卡盘。 从下方将测试样品的另一端部分保持的结晶保持器用另一根线连接到下钩以支撑保持器。 该装置包括用于以给定速率拉动钩的装置，以及用于连续测量拉伸载荷的测量装置。 这样的装置和方法能够以良好的精度和再现性精确地测量硅晶种的颈部的机械强度。 在提供良好的生产率和安全性平衡的条件下生长单晶锭。

公开(公告)号：US4944834A

公开(公告)日：1990-07-31

申请号：US218457

申请日：1988-07-07

申请人： Kohji Tada ,  Toshihiro Kotani

发明人： Kohji Tada ,  Toshihiro Kotani

IPC分类号： C30B15/24 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B27/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/18 ,  H01L21/208

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： In a process for pulling a crystal such as Si, Ge, GaAs, InP, GaP, InAs, AlAs, CdTe, CdSe, ZnTe, HgTe, MnTe, Gd.sub.3 Ga.sub.5 O.sub.12, Bi.sub.12 SiO.sub.20 and LiNbO.sub.3 from a raw material melt within a baffle plate whose bore diameter is gradually increased upward and which is arranged in such a manner that the melt inside and outside the baffle plate is in communication with each other through the small opening part at the end thereof, the baffle plate is moved relatively to the surface of the melt so as to increase the diameter of the melt surface inside the baffle plate with the increase of the diameter of the pulled crystal at the solid-liquid interface.

摘要翻译： 在将孔内径的挡板内的原料熔体中拉出诸如Si，Ge，GaAs，InP，GaP，InAs，AlAs，CdTe，CdSe，ZnTe，HgTe，MnTe，Gd3Ga5O12，Bi12SiO20和LiNbO3的晶体的工艺中， 逐渐向上增加，并且以使得挡板内侧和外侧的熔体通过其端部处的小开口部彼此连通的方式配置，挡板相对于熔体的表面移动，从而 以便随着固 - 液界面处的拉晶的直径的增加，增加挡板内熔体表面的直径。

公开(公告)号：US4515755A

公开(公告)日：1985-05-07

申请号：US368440

申请日：1982-04-14

申请人： Shuitsu Matsuo ,  Yasuhiro Imanishi ,  Hideo Nagashima ,  Masaharu Watanabe ,  Toshiro Usami ,  Hisashi Muraoka

发明人： Shuitsu Matsuo ,  Yasuhiro Imanishi ,  Hideo Nagashima ,  Masaharu Watanabe ,  Toshiro Usami ,  Hisashi Muraoka

IPC分类号： C04B35/584 ,  C30B15/10 ,  C30B15/24 ,  C30B15/34

CPC分类号： C04B35/584 ,  C30B15/10 ,  C30B15/24 ,  Y10S117/90 ,  Y10T117/1032

摘要： An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.

摘要翻译： 一种通过使用晶种的上拉工艺从熔融硅生产硅单晶的装置，其中与熔融硅接触的装置的至少一部分包括从气相沉淀的氮化硅层，并且包含20％或 β相以上，或者包含80％以上的α晶相，其晶粒的晶粒直径为5μm以上，比例为10％以上。