摘要:
The subject invention provides a photoreceiver/amplifier circuit comprising a differential circuit including a differential transistor pair and a bias circuit; an active load; a feedback resistor for converting a photocurrent generated from a photodiode into a voltage; a reference resistor; and a compensation circuit. The resistance of the feedback resistor is greater than the resistance of the reference resistor. The compensation circuit supplies a compensation current from a junction between the feedback resistor and a non-inverting input terminal of the differential amplifier circuit, so as to cancel the difference between a voltage between terminals of the feedback resistor and a voltage between terminals of the reference resistor. This reduces noise and improves offset voltage characteristics. The present invention provides a photoreceiver/amplifier circuit ensuring noise reduction and desirable offset voltage characteristics.
摘要:
There is provided a light-receiving and amplifying device capable of changing its gain at high speed. A cathode of a photodiode PD is connected to a power source V.sub.CC via a current mirror circuit. An anode of the photodiode PD is connected to an input of an amplifier circuit AMP. The amplifier circuit AMP receives a photocurrent from the photodiode PD, converts the photocurrent into a voltage, and amplifies the voltage to form an output signal V.sub.OUT. A control signal of a current having the same magnitude as that of the photocurrent and output from the current mirror circuit is input to a control input terminal of a gain switching circuit. The gain switching circuit is composed of a resistor Rf.sub.1, a resistor Rf.sub.2, and a switch SW. The resistor Rf.sub.1 is connected across the input and the output of the amplifier circuit AMP, and the resistor Rf.sub.2 and the switch SW connected in series are connected across the input and the output of the amplifier circuit AMP.
摘要:
A method for growing a compound semiconductor single crystal comprising cooling a starting material melt of a compound semiconductor with an upward increasing temperature gradient in a crystal-growing container having a seed crystal placed at a lower end, thereby growing a single crystal upward from the seed crystal, the crystal orientation of the seed crystal in a crystal growth axis direction being an offset orientation of +θ, wherein the offset angle θ is 2°≦θ≦55°.
摘要:
The object of the invention is to provide a light receiving amplification element applicable to an optical pickup apparatus comprising a semiconductor two-wavelength laser element and one condensing lens. The light receiving amplification element is provided with a plurality of light receiving portions corresponding to different wavelengths, a plurality of trans-impedance type amplifiers connected to the light receiving portions according to the different wavelengths and adaptable to the different wavelengths and switching portion for switching output from the trans-impedance type amplifier according to each of the wavelengths.
摘要:
The subject invention provides a photoreceiver/amplifier circuit comprising a differential circuit including a differential transistor pair and a bias circuit; an active load; a feedback resistor for converting a photocurrent generated from a photodiode into a voltage; a reference resistor; and a compensation circuit. The resistance of the feedback resistor is greater than the resistance of the reference resistor. The compensation circuit supplies a compensation current from a junction between the feedback resistor and a non-inverting input terminal of the differential amplifier circuit, so as to cancel the difference between a voltage between terminals of the feedback resistor and a voltage between terminals of the reference resistor. This reduces noise and improves offset voltage characteristics. The present invention provides a photoreceiver/amplifier circuit ensuring noise reduction and desirable offset voltage characteristics.
摘要:
A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2 or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.
摘要:
A non-crystalline polyester resin composition of the present invention is excellent in processing properties of its molding, mechanical properties and chemical properties, in addition to its moldability, and is used in a variety of fields, which comprises 50 to 99% by weight of a non-crystalline polyester resin (component A) and 1 to 50% by weight of an epoxy-modified block copolymer (component B), total amount of the components A and B being 100, component B being obtained by epoxidation of a block copolymer (B3) comprising a polymer block (B1) containing mainly a unit based on a vinyl aromatic compound and a polymer block (B2) containing mainly a unit based on a conjugated diene compound, an epoxy equivalent of the component B being in the range of 400 to 7,500, and an absolute difference-value of the refractive index between the components A and B being 0.008 or less.