公开(公告)号：US11143700B2

公开(公告)日：2021-10-12

申请号：US16582758

申请日：2019-09-25

申请人： Advanced Micro Devices, Inc.

发明人： Venkat Krishnan Ravikumar ,  Nathan Linarto ,  Wen Tsann Lua ,  Abel Tan Yew Hong ,  Shei Lay Phoa ,  Gopinath Ranganathan ,  Jiann Minn Chin

IPC分类号： G01R31/28 ,  G01R31/265 ,  G01R31/311 ,  G01R31/01 ,  G01R23/17 ,  G01R29/08

摘要： An optic probe is used to measure signals from a device under test. The optic probe is positioned at a target probe location within a cell of the device under test, the cell including a target net to be measured and a plurality of non-target nets. A test pattern is applied to the cell with the optic probe a laser probe (LP) waveform is obtained in response. A target net waveform is extracted from the LP waveform by: (i) simulating a combinational logic analysis (CLA) cross-talk waveform to model cross-talk from selected non-target nets by simulating an optical response of the cell to the test pattern with the target net masked; (ii) estimating a cross-talk weight; and (iii) determining a target net waveform by weighting the CLA cross-talk waveform according to the cross-talk weight and subtracting the weighted CLA cross-talk waveform from the LP waveform.

公开(公告)号：US11125806B2

公开(公告)日：2021-09-21

申请号：US16527142

申请日：2019-07-31

申请人： ASML Netherlands B.V.

发明人： Patricius Aloysius Jacobus Tinnemans ,  Patrick Warnaar ,  Vasco Tomas Tenner ,  Maurits Van der Schaar

IPC分类号： G01R31/265

摘要： Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.

公开(公告)号：US10698006B2

公开(公告)日：2020-06-30

申请号：US15548860

申请日：2016-02-02

申请人： HAMAMATSU PHOTONICS K.K.

发明人： Tomonori Nakamura ,  Akihiro Otaka

IPC分类号： G01R15/24 ,  G01R31/265 ,  G01R31/311 ,  G02B27/62

摘要： An inspection apparatus includes a tester unit that applies a stimulus signal to a semiconductor apparatus, an MO crystal arranged to face a semiconductor apparatus, a light source that outputs light, an optical scanner that irradiates the MO crystal with light output from light source, a light detector that detects light reflected from the MO crystal arranged to face the semiconductor apparatus D and outputs a detection signal, and a computer that generate phase image data based on a phase difference between a reference signal generated based on a stimulus signal and the detection signal, the phase image data including a phase component indicating the phase difference, and generates an image indicating a path of a current from the phase image data.

公开(公告)号：US20200081056A1

公开(公告)日：2020-03-12

申请号：US16683875

申请日：2019-11-14

申请人： FUJITSU LIMITED

发明人： Takeshi Soeda

IPC分类号： G01R31/265 ,  G01R31/307

摘要： A soft error inspection method for a semiconductor device includes: irradiating and scanning the semiconductor device with a laser beam or an electron beam; and measuring and storing a time of bit inversion for each of areas irradiated with the laser beam or the electron beam of the semiconductor device.

公开(公告)号：US10580615B2

公开(公告)日：2020-03-03

申请号：US15912641

申请日：2018-03-06

申请人： GLOBALFOUNDRIES INC.

发明人： Kok Hin Teo ,  Jay A. Mody ,  Jeffrey B. Riendeau ,  Philip V. Kaszuba ,  Jian Qiu

IPC分类号： H01J37/28 ,  G01N21/95 ,  G01N21/88 ,  G01R31/265 ,  G06T7/521

摘要： Disclosed are a system and method, wherein, during manufacturing of integrated circuit chips on a semiconductor wafer, an in-line optical inspection is performed to acquire a two-dimensional (2D) image of an area of the semiconductor wafer and to confirm and classify a defect in the area. The 2D image is then converted into a virtual three-dimensional (3D) image. To ensure that the 3D image is accurate, techniques are employed to determine the topography of the surface shown in the 2D image based on material-specific image intensity information and, optionally, to filter out any edge effects that result in anomalies within the 3D image. The resulting 3D image is usable for performing an in-line failure analysis to determine a root cause of a defect. Such an in-line failure analysis can be performed significantly faster than any off-line failure analysis and, thus, allows for essentially real-time advanced process control (APC).

公开(公告)号：US20190391203A1

公开(公告)日：2019-12-26

申请号：US16481773

申请日：2018-02-08

申请人： VANDERBILT UNIVERSITY

发明人： Andrew L. STERNBERG ,  Ronald D. SCHRIMPF ,  Robert A. REED

IPC分类号： G01R31/311 ,  G01R31/265

摘要： Systems and methods are provided for testing a threshold energy required to cause a latchup on an electronic component. An exemplary method includes applying a series of laser pulses to a testing object with a pulsed laser unit. The testing object is connected to a testing circuit which can measure the energy of each of the series of laser pulses, and detect whether a pulse of the series of laser pulses resulted in a latchup on the testing object. Upon detecting the pulse, the method provides for logging the energy of the pulse using a recording unit and logging the latchup status of the test device. If a latchup is detected, the testing circuit automatically mitigates the latchup event.

公开(公告)号：US20190257876A1

公开(公告)日：2019-08-22

申请号：US15901403

申请日：2018-02-21

申请人： ASM Technology Singapore Pte Ltd

发明人： Chung Yan LAU ,  Chi Wah CHENG

IPC分类号： G01R31/265 ,  G01R31/308

摘要： Defects in an electronic device are detected by capturing a first image from a first side of the electronic device, and capturing a second image from a second side of the electronic device which is different from the first side. The first and second images are captured when an inside of the electronic device is illuminated by light rays passed therethrough. If a defect is present in the electronic device, a profile of the defect is determined based on the first and second images and the electronic device is rejected if it is assessed from the profile of the defect that it is of a type for which the electronic device should be rejected.

公开(公告)号：US20190113415A1

公开(公告)日：2019-04-18

申请号：US16211511

申请日：2018-12-06

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Philippe GROSSE ,  Patrick LE MAITRE ,  Jean-Francois CARPENTIER

IPC分类号： G01M11/02 ,  G01R31/311 ,  G02B6/28 ,  G02B6/12 ,  G02B6/00 ,  G01R35/00 ,  G01R31/265 ,  G02B6/34 ,  G01R31/303 ,  G01R31/28 ,  G01R31/27 ,  G01R31/317

摘要： An optical testing circuit on a wafer includes an optical input configured to receive an optical test signal and photodetectors configured to generate corresponding electrical signals in response to optical processing of the optical test signal through the optical testing circuit. The electrical signals are simultaneously sensed by a probe circuit and then processed. In one process, test data from the electrical signals is simultaneously generated at each step of a sweep in wavelength of the optical test signal and output in response to a step change. In another process, the electrical signals are sequentially selected and the sweep in wavelength of the optical test signal is performed for each selected electrical signal to generate the test data.

公开(公告)号：US10209295B2

公开(公告)日：2019-02-19

申请号：US15539898

申请日：2016-05-05

申请人： BOE Technology Group Co., Ltd. ,  Hefei BOE Optoelectronics Technology Co., Ltd.

发明人： Min Xu ,  Jianyang Yu ,  Weiwei Sun ,  Zhen Wei

IPC分类号： G01R31/265 ,  H01L21/66 ,  H01L27/12 ,  G02F1/13 ,  G02F1/1362

摘要： A non-contact probe signal loading device is disclosed. The non-contact probe signal loading device includes a probe metal sheet electrically connected to a signal loading terminal, a lower surface of the probe metal sheet facing towards a signal inputting metal sheet into which a signal is to be loaded. A signal transmitting capacitor is formed between the probe metal sheet and the signal inputting metal sheet, and the signal transmitting capacitor functions as a medium to transmit a loaded signal to the signal inputting metal sheet from the probe metal sheet.

公开(公告)号：US10126253B2

公开(公告)日：2018-11-13

申请号：US14364997

申请日：2012-12-11

申请人： NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

发明人： Toshiyuki Sameshima

IPC分类号： G01N22/00 ,  H01L21/66 ,  G01N21/63 ,  G01N27/00 ,  G01N33/00 ,  G01R31/26 ,  G01R31/265

摘要： A photoinduced carrier lifetime measurement device includes light sources that respectively apply light that differs in wavelength and generates photoinduced carriers to a semiconductor substrate, a microwave generation section that generates microwaves that are applied to the semiconductor substrate, a detection section that detects the intensity of the microwaves that have passed through the semiconductor substrate, and a calculation section that calculates the effective carrier lifetime corresponding to the wavelength of each light based on the intensity of the microwaves detected when applying each light, and calculates the bulk carrier lifetime and a surface recombination velocity of the semiconductor substrate based on the effective carrier lifetime calculated corresponding to the wavelength of each light.