公开(公告)号：US20080224189A1

公开(公告)日：2008-09-18

申请号：US12046134

申请日：2008-03-11

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14689 ,  H01L27/14603 ,  H01L27/14641 ,  H01L27/14643

Abstract: An image sensor and a method for manufacturing an image sensor that has an increased aspect ratio. An image sensor and a method for manufacturing an image sensor that have a relatively large process margin (e.g. even in high level pixels), which may reduce and/or eliminate restrictions in downscaling an image sensor. An image sensor may include at least one of a first unit pixel including a first transfer transistor, a second unit pixel including a second drive transistor, and a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel. A method of manufacturing an image sensor including at least one of forming a first unit pixel including a first transfer transistor, forming a second unit pixel including a second drive transistor, and forming a contact electrically connecting a floating diffusion region of the first unit pixel with the second drive transistor of the second unit pixel.

Abstract translation: 一种具有增加的纵横比的图像传感器和图像传感器的制造方法。 用于制造具有相对较大的处理余量（例如甚至高水平像素）的图像传感器的图像传感器和方法，其可以减少和/或消除降低图像传感器的限制。 图像传感器可以包括包括第一传输晶体管的第一单位像素，包括第二驱动晶体管的第二单位像素和将第一单位像素的浮动扩散区电连接到第二驱动晶体管的第二驱动晶体管中的至少一个 第二单位像素。 一种制造图像传感器的方法，包括形成包括第一转移晶体管的第一单位像素，形成包括第二驱动晶体管的第二单位像素和形成将第一单位像素的浮动扩散区域电连接的接点中的至少一个， 第二单位像素的第二驱动晶体管。

公开(公告)号：US07425973B2

公开(公告)日：2008-09-16

申请号：US11385800

申请日：2006-03-22

Applicant: Dong-hun Han

Inventor： Dong-hun Han

IPC: B41J2/38

CPC classification number: B41J2/32 ,  B41J3/60 ,  B41J11/04 ,  B41J13/0045

Abstract: A thermal type image forming apparatus is provided for printing images on both sides of a medium, which are a first surface and a second surface of the medium. A thermal print head (TPH) is rotated about a platen roller to a first position facing the first surface of the medium and to a second position facing the second surface of the medium. The thermal type image forming apparatus includes a transfer unit for transferring the medium in a first direction to supply the medium to a space between the platen roller and the thermal print head and in a second direction substantially opposite to the first direction to perform printing. A control member controls motion of the platen roller in the second direction to align a printing nip formed by the platen roller and the TPH with a heating line of the thermal print head. The platen roller is elastically biased in a direction to contact the control member.

Abstract translation: 提供一种用于在作为介质的第一表面和第二表面的介质的两侧上打印图像的热图像形成装置。 热打印头（TPH）围绕压纸辊旋转到面向介质的第一表面的第一位置和面向介质的第二表面的第二位置。 热式图像形成装置包括：传送单元，用于沿第一方向传送介质，以将介质供给到压纸辊和热敏打印头之间的空间，并且在基本上与第一方向相反的第二方向上进行打印。 控制构件控制压纸辊在第二方向上的运动，以使由压印辊和TPH形成的打印压区与热打印头的加热线对准。 压纸辊在与控制构件接触的方向上弹性偏压。

公开(公告)号：US20080149939A1

公开(公告)日：2008-06-26

申请号：US12001679

申请日：2007-12-11

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L29/04 ,  H01L21/20

CPC classification number: H01L23/38 ,  H01L27/14618 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an electronic cooling device and a fabrication method thereof. The method may include forming an insulating layer on a semiconductor substrate, forming first and second silicide layers on the insulating layer, forming separate paired p-type and n-type semiconductors on each of the first and second silicide layers, forming a first interlayer dielectric (ILD) layer on the p-type and n-type semiconductors, exposing top surfaces of the n-type and p-type semiconductors, forming a third silicide layer on one semiconductor on each of the first and second silicide layers, forming a second ILD layer on the third silicide layer, and etching the second and first ILD layers to form contact holes exposing top surfaces of the first and second silicide layers.

Abstract translation: 提供一种电子冷却装置及其制造方法。 该方法可以包括在半导体衬底上形成绝缘层，在绝缘层上形成第一和第二硅化物层，在第一和第二硅化物层的每一个上形成单独的成对p型和n型半导体，形成第一层间电介质 （ILD）层，暴露n型和p型半导体的顶表面，在第一和第二硅化物层中的每一个上的一个半导体上形成第三硅化物层，形成第二硅化物层 ILD层，并且蚀刻第二和第一ILD层以形成暴露第一和第二硅化物层的顶表面的接触孔。

公开(公告)号：US07358108B2

公开(公告)日：2008-04-15

申请号：US11022890

申请日：2004-12-28

Applicant: Chang Hun Han ,  Bum Sik Kim

Inventor： Chang Hun Han ,  Bum Sik Kim

IPC: H01L21/76

CPC classification number: H01L27/14689 ,  H01L27/14609 ,  H01L27/1463

Abstract: A CMOS image sensor and a method for fabricating the same are disclosed, in which the boundary between an active region and a field region is not damaged by ion implantation. The method for fabricating a CMOS image sensor includes forming a trench in a first conductive type semiconductor substrate, forming a first conductive type heavily doped impurity ion region in the semiconductor substrate at both sides of the trench, forming a device isolation film by interposing an insulating film between the trench and the device isolation, sequentially forming a gate insulating film and a gate electrode on the semiconductor substrate, and forming a second conductive type impurity ion region for a photodiode in the semiconductor substrate between the gate electrode and the device isolation film.

Abstract translation: 公开了一种CMOS图像传感器及其制造方法，其中有源区域和场区域之间的边界不被离子注入所损坏。 CMOS图像传感器的制造方法包括在第一导电型半导体衬底中形成沟槽，在沟槽两侧的半导体衬底中形成第一导电型重掺杂杂质离子区域，通过插入绝缘膜形成器件隔离膜 在沟槽和器件隔离之间，在半导体衬底上依次形成栅绝缘膜和栅电极，以及在栅电极和器件隔离膜之间的半导体衬底中形成用于光电二极管的第二导电型杂质离子区。

公开(公告)号：US20080079128A1

公开(公告)日：2008-04-03

申请号：US11855951

申请日：2007-09-14

Applicant: Hyo-Jae BANG ,  Seong-Chan HAN ,  Hun HAN ,  Dong-Chun LEE

Inventor： Hyo-Jae BANG ,  Seong-Chan HAN ,  Hun HAN ,  Dong-Chun LEE

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L23/49582 ,  H01L25/105 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A lead frame type stack package in which a lead of the package is well connected to a semiconductor module, and a method of fabricating the same are provided. A lead of an upper package and a lead of a lower package are connected using laser soldering. Since leads of the upper and lower packages are connected by solder balls without the use of a soldering pot, loss of a plating layer of the lead due to solder dipping is prevented and the leads are well connected without soldering defects when connecting the lead of the lower package to a connection pad of a semiconductor module substrate.

Abstract translation: 一种引线框架型堆叠封装，其中封装的引线与半导体模块良好连接，并提供其制造方法。 使用激光焊接连接上封装的引线和下封装的引线。 由于上，下封装的引线通过焊锡球连接而不使用焊锡锅，因此防止了由焊料浸渍引起的引线的镀层损失，并且当连接引线 下封装到半导体模块基板的连接焊盘。

公开(公告)号：US20070285945A1

公开(公告)日：2007-12-13

申请号：US11636579

申请日：2006-12-11

Applicant: Jeong-Hun Han

Inventor： Jeong-Hun Han

IPC: F21V7/04

CPC classification number: G02B6/0071 ,  F21V9/30 ,  G02B6/0003 ,  G02B6/0018 ,  G02F1/133617 ,  Y10S385/901

Abstract: A backlight unit includes a lamp to generate and radiate an ultraviolet ray, a light guide plate including a light receiving portion to receive the ultraviolet ray, an optical sheet disposed on the light guide plate to change the ultraviolet ray into a visible ray, the optical sheet including a fluorescent material, and a reflective sheet arranged under the light guide plate.

Abstract translation: 背光单元包括产生并辐射紫外线的灯，包括接收紫外线的光接收部的导光板，设置在导光板上以将紫外线变为可见光的光学片，光学 包括荧光材料的片材和布置在导光板下方的反射片材。

公开(公告)号：US20070223248A1

公开(公告)日：2007-09-27

申请号：US11524816

申请日：2006-09-21

Applicant: Jeong Hun Han

Inventor： Jeong Hun Han

IPC: F21V7/04 ,  F21V11/16

CPC classification number: G02B6/0028 ,  G02B6/0025 ,  G02B6/0031 ,  G02B6/0068

Abstract: A backlight unit and a liquid crystal display having the backlight are provided. The backlight unit includes a plurality of light emitting diode (LED) chips, a light guide plate for converting light generated from the LED chips into surface light, and a plurality of optical guide modules corresponding to the respective LED chips and disposed between the LED chips and the light guide plate.

Abstract translation: 提供背光单元和具有背光的液晶显示器。 背光单元包括多个发光二极管（LED）芯片，用于将从LED芯片产生的光转换成表面光的导光板，以及对应于各个LED芯片的多个光导模块，并且设置在LED芯片 和导光板。

公开(公告)号：US20070122144A1

公开(公告)日：2007-05-31

申请号：US11520662

申请日：2006-09-14

Applicant: Dong-hun Han

Inventor： Dong-hun Han

IPC: G03B17/00

CPC classification number: G03B17/02 ,  G03B11/043 ,  G03B17/48 ,  G03B17/53 ,  H04N5/2251 ,  H04N5/23241

Abstract: A camera including a lens protection cap is provided. The camera includes a case, a lens, a power switch, and the lens protection cap. The lens is located inside the case and exposed toward a front side. The power switch is provided on the outer surface of the case, for turning the power on/off, and the lens protection cap is provided to prevent damage of the lens by shielding the lens when the power is turned off. The power switch and the lens protection cap are directly connected with each other to allow the lens protection cap to expose/shield the lens when the power switch is on/off-operated.

Abstract translation: 提供了一种包括镜头保护帽的照相机。 相机包括外壳，镜头，电源开关和镜头保护帽。 透镜位于壳体内部并朝向前方暴露。 电源开关设置在外壳的外表面上，用于打开/关闭电源，并提供镜头保护盖，以防止在关闭电源时屏蔽镜头而损坏镜头。 电源开关和镜头保护帽直接相互连接，以便在电源开关打开/关闭操作时允许镜头保护帽露出/屏蔽镜头。

公开(公告)号：US07037748B2

公开(公告)日：2006-05-02

申请号：US10747196

申请日：2003-12-30

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00

CPC classification number: H01L27/14643 ,  H01L27/14687

Abstract: A CMOS image sensor and a manufacturing method thereof, wherein the gates of several transistors of the CMOS image sensor are formed in an active region defined by an isolation region for a unit pixel of the CMOS image sensor, and a passivation layer composed of insulating layer is formed on the semiconductor substrate. Impurities are ion-implanted into the active region to form one or more diffusion regions of a photo diode of the CMOS image sensor, wherein the passivation layer prevents a boundary portion of the active region from being ion-implanted. Thus, damages by ion implantation at the boundary portion between the diffusion region for the photo diode and the isolation region are prevented, and the dark current of the CMOS image sensor is reduced.

Abstract translation: 一种CMOS图像传感器及其制造方法，其中CMOS图像传感器的多个晶体管的栅极形成在由CMOS图像传感器的单位像素的隔离区域限定的有源区域中，以及由绝缘层 形成在半导体基板上。 杂质被离子注入有源区域以形成CMOS图像传感器的光电二极管的一个或多个扩散区域，其中钝化层防止有源区域的边界部分被离子注入。 因此，防止了在光电二极管的扩散区域与隔离区域之间的边界部分处的离子注入的损坏，并且降低了CMOS图像传感器的暗电流。

公开(公告)号：US07008856B2

公开(公告)日：2006-03-07

申请号：US10750250

申请日：2003-12-31

Applicant: Chang Hun Han ,  Bong Kil Kim

Inventor： Chang Hun Han ,  Bong Kil Kim

IPC: H01L21/76

CPC classification number: H01L27/11568 ,  H01L27/115 ,  H01L27/11521 ,  Y10S438/95

Abstract: A flash memory cell and fabrication method thereof are disclosed. An example fabrication method deposits a pad oxide layer and a pad nitride layer on a semiconductor substrate, patterns the pad nitride layer, implants ions into the substrate to form an ion implant region, forms spacers on sidewalls of the pad nitride layer pattern, removes some part of the pad oxide layer and the top portion of the substrate through an etching process using the spacers as a mask to form a trench that divides the ion implant region into two parts. The example fabrication method also forms a gap filling insulating layer over the resulting substrate, and forms a trench isolation layer and junction regions simultaneously by removing the spacers, the pad nitride layer pattern, the pad oxide layer, and the top portion of the gap filling insulating layer.

Abstract translation: 公开了闪存单元及其制造方法。 示例性制造方法将衬垫氧化物层和衬垫氮化物层沉积在半导体衬底上，将衬垫氮化物层，衬底离子注入衬底以形成离子注入区域，在衬垫氮化物层图案的侧壁上形成间隔物，去除一些 通过使用间隔物作为掩模的蚀刻工艺，形成将离子注入区域分成两部分的沟槽的衬垫氧化物层的一部分和衬底的顶部。 示例性制造方法还在所得到的衬底上形成间隙填充绝缘层，并且通过去除间隔物，衬垫氮化物层图案，衬垫氧化物层和间隙填充物的顶部部分同时形成沟槽隔离层和接合区域 绝缘层。