Third metal layer for thin film transistor with reduced defects in liquid crystal display
    191.
    发明授权
    Third metal layer for thin film transistor with reduced defects in liquid crystal display 有权
    用于薄膜晶体管的第三金属层具有降低液晶显示器的缺陷

    公开(公告)号:US09001297B2

    公开(公告)日:2015-04-07

    申请号:US13752612

    申请日:2013-01-29

    Applicant: Apple Inc.

    Abstract: A liquid crystal display (LCD) includes an array of pixels over a thin film transistor (TFT) substrate. The TFT substrate includes a TFT that has a first metal layer to form a gate electrode and a second metal layer to form a source electrode and a drain electrode for each pixel. The LCD also includes an organic insulation layer disposed over the TFT substrate, where the organic insulator layer has trenches on a top surface. The LCD further includes a third metal layer disposed over the organic insulation layer in the trenches, the trenches having a trench depth at least equal to the thickness of the third metal layer. The LCD also includes a passivation layer over the third metal layer, and a pixel electrode for each pixel over the passivation layer. The LCD further includes a polymer layer over the pixel electrode, and liquid molecules on the polymer layer.

    Abstract translation: 液晶显示器(LCD)包括薄膜晶体管(TFT)衬底上的像素阵列。 TFT基板包括具有形成栅电极的第一金属层和形成用于每个像素的源电极和漏电极的第二金属层的TFT。 LCD还包括设置在TFT基板上的有机绝缘层,其中有机绝缘体层在顶表面上具有沟槽。 LCD还包括设置在沟槽中的有机绝缘层之上的第三金属层,沟槽的沟槽深度至少等于第三金属层的厚度。 LCD还包括在第三金属层上的钝化层,以及在钝化层上的每个像素的像素电极。 LCD还包括像素电极上方的聚合物层和聚合物层上的液体分子。

    Gate insulator loss free etch-stop oxide thin film transistor
    192.
    发明授权
    Gate insulator loss free etch-stop oxide thin film transistor 有权
    栅极绝缘体无损蚀刻 - 停止氧化物薄膜晶体管

    公开(公告)号:US08987049B2

    公开(公告)日:2015-03-24

    申请号:US14474433

    申请日:2014-09-02

    Applicant: Apple Inc.

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管(TFT)的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层,以及在半导体层上沉积绝缘体层,以及蚀刻绝缘体层以形成图案化蚀刻停止件,而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括:除了源电极和漏电极之外的半导体层的一部分,使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

    Organic Light-Emitting Diode Displays With Semiconducting-Oxide and Silicon Thin-Film Transistors
    193.
    发明申请
    Organic Light-Emitting Diode Displays With Semiconducting-Oxide and Silicon Thin-Film Transistors 有权
    具有半导体氧化物和硅薄膜晶体管的有机发光二极管显示器

    公开(公告)号:US20150053935A1

    公开(公告)日:2015-02-26

    申请号:US14229232

    申请日:2014-03-28

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中,可以形成包括半导体氧化物薄膜晶体管,硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中,显示驱动器电路可以包括硅薄膜晶体管电路,显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

    IN-CELL TOUCH FOR LED
    194.
    发明申请
    IN-CELL TOUCH FOR LED 有权
    LED小型触摸

    公开(公告)号:US20140225838A1

    公开(公告)日:2014-08-14

    申请号:US13766376

    申请日:2013-02-13

    Applicant: APPLE INC.

    Abstract: A touch screen having touch circuitry integrated into a display pixel stackup. The touch screen can include a transistor layer, an LED layer and a first layer. The first layer can operate as an LED cathode during a display phase and as touch circuitry during a touch sensing phase. The transistor layer can be at least partially utilized for transitioning between the display phase and the touch sensing phase. The touch screen can be fabricated to reduce or eliminate damage to the LED layer.

    Abstract translation: 具有集成到显示像素堆叠中的触摸电路的触摸屏。 触摸屏可以包括晶体管层,LED层和第一层。 在显示阶段,第一层可以作为LED阴极工作,在触摸感测阶段可以作为触摸电路。 晶体管层可以至少部分地用于在显示阶段和触摸感测阶段之间的转换。 可以制造触摸屏以减少或消除对LED层的损坏。

    Thin Film Transistor with Increased Doping Regions
    195.
    发明申请
    Thin Film Transistor with Increased Doping Regions 审中-公开
    具有增加掺杂区域的薄膜晶体管

    公开(公告)号:US20140225117A1

    公开(公告)日:2014-08-14

    申请号:US14258945

    申请日:2014-04-22

    Applicant: Apple Inc.

    Abstract: A transistor that may be used in electronic displays to selectively activate one or more pixels. The transistor includes a metal layer, a silicon layer deposited on at least a portion of the metal layer, the silicon layer includes an extension portion that extends a distance past the metal layer, and at least three lightly doped regions positioned in the silicon layer. The at least three lightly doped regions have a lower concentration of doping atoms than other portions of the silicon layer forming the transistor.

    Abstract translation: 可用于电子显示器中以选择性地激活一个或多个像素的晶体管。 晶体管包括金属层,沉积在金属层的至少一部分上的硅层,硅层包括延伸距离金属层的延伸部分和位于硅层中的至少三个轻掺杂区域。 所述至少三个轻掺杂区域具有比形成晶体管的硅层的其它部分更低的掺杂原子浓度。

    GATE INSULATOR UNIFORMITY
    196.
    发明申请
    GATE INSULATOR UNIFORMITY 有权
    门绝缘子均匀性

    公开(公告)号:US20140141565A1

    公开(公告)日:2014-05-22

    申请号:US13679767

    申请日:2012-11-16

    Applicant: APPLE INC.

    CPC classification number: H01L29/66742 H01L27/1225 H01L29/66969 H01L29/7869

    Abstract: Embodiments of the present disclosure relate to display devices and methods for manufacturing display devices. Specifically, embodiments of the present disclosure employ an enhanced etching process to create uniformity in the gate insulator of thin-film-transistor (TFTs) by using an active layer to protect the gate insulator from inadvertent etching while patterning an etch stop layer.

    Abstract translation: 本公开的实施例涉及用于制造显示设备的显示设备和方法。 具体地,本公开的实施例采用增强的蚀刻工艺,以通过使用有源层来在薄膜晶体管(TFT)的栅极绝缘体中产生均匀性,以保护栅极绝缘体免受无意蚀刻,同时图案化蚀刻停止层。

    Integrated touch screen
    197.
    发明授权
    Integrated touch screen 有权
    集成触摸屏

    公开(公告)号:US08730196B2

    公开(公告)日:2014-05-20

    申请号:US13784714

    申请日:2013-03-04

    Applicant: Apple Inc.

    CPC classification number: G06F3/044 G06F3/0412

    Abstract: Displays with integrated touch sensing circuitry are provided. An integrated touch screen can include multi-function circuit elements that form part of the display circuitry of the display system that generates an image on the display, and also form part of the touch sensing circuitry of a touch sensing system that senses one or more touches on or near the display. The multi-function circuit elements can be, for example, capacitors in display pixels of an LCD that are configured to operate as display circuitry in the display system, and that may also be configured to operate as touch circuitry of the touch sensing system. For example, one or more circuit elements of the display pixel stackup can form a conductive portion of the touch sensing system, such as a charge collector, which can be operated with switches and conductive lines to sense touch.

    Abstract translation: 提供带集成触摸感应电路的显示器。 集成触摸屏可以包括形成显示系统的显示电路的一部分的多功能电路元件,其在显示器上产生图像,并且还形成感测一个或多个触摸的触摸感测系统的触摸感测电路的一部分 在显示器上或附近。 多功能电路元件可以是例如LCD的显示像素中的电容器,其被配置为作为显示系统中的显示电路工作,并且还可以被配置为作为触摸感测系统的触摸电路来操作。 例如,显示像素堆叠的一个或多个电路元件可以形成触摸感测系统的导电部分,例如电荷收集器,其可以用开关和导电线来操作以感测触摸。

    Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor
    198.
    发明申请
    Gate Insulator Loss Free Etch-Stop Oxide Thin Film Transistor 有权
    栅极绝缘体无损蚀刻刻蚀氧化物薄膜晶体管

    公开(公告)号:US20140042427A1

    公开(公告)日:2014-02-13

    申请号:US13629537

    申请日:2012-09-27

    Applicant: APPLE INC.

    Abstract: A method is provided for fabricating a thin-film transistor (TFT). The method includes forming a semiconductor layer over a gate insulator that covers a gate electrode, and depositing an insulator layer over the semiconductor layer, as well as etching the insulator layer to form a patterned etch-stop without losing the gate insulator. The method also includes forming a source electrode and a drain electrode over the semiconductor layer and the patterned etch-stop. The method further includes removing a portion of the semiconductor layer beyond the source electrode and the drain electrode such that a remaining portion of the semiconductor layer covers the gate insulator in a first overlapping area of the source electrode and the gate electrode and a second overlapping area of the drain electrode and gate electrode.

    Abstract translation: 提供了制造薄膜晶体管(TFT)的方法。 该方法包括在覆盖栅电极的栅极绝缘体上形成半导体层,以及在半导体层上沉积绝缘体层,以及蚀刻绝缘体层以形成图案化蚀刻停止件,而不会失去栅极绝缘体。 该方法还包括在半导体层和图案化蚀刻停止物上形成源电极和漏电极。 该方法还包括:除了源电极和漏电极之外的半导体层的一部分,使得半导体层的剩余部分在源电极和栅电极的第一重叠区域和第二重叠区域中覆盖栅极绝缘体 的漏电极和栅电极。

    DISPLAY WITH DUAL-FUNCTION CAPACITIVE ELEMENTS
    199.
    发明申请
    DISPLAY WITH DUAL-FUNCTION CAPACITIVE ELEMENTS 有权
    显示双功能电容元件

    公开(公告)号:US20130293513A1

    公开(公告)日:2013-11-07

    申请号:US13936980

    申请日:2013-07-08

    Applicant: Apple Inc.

    Abstract: A touch screen including display pixels with capacitive elements is provided. The touch screen includes first common voltage lines connecting capacitive elements in adjacent display pixels, and a second common voltage line connecting first common voltage lines. The pixels can be formed as electrically separated regions by including breaks in the common voltage lines. The regions can include a drive region that is stimulated by stimulation signals, a sense region that receives sense signals corresponding to the stimulation signals. A grounded region can also be included, for example, between a sense region and a drive region. A shield layer can be formed of a substantially high resistance material and disposed to shield a sense region. A black mask line and conductive line under the black mask line can be included, for example, to provide low-resistance paths between a region of pixels and touch circuitry outside the touch screen borders.

    Abstract translation: 提供了包括具有电容元件的显示像素的触摸屏。 触摸屏包括连接相邻显示像素中的电容元件的第一公共电压线和连接第一公共电压线的第二公共电压线。 可以通过在公共电压线中包括断裂来将像素形成为电隔离区域。 这些区域可以包括由刺激信号刺激的驱动区域,接收对应于刺激信号的感测信号的感测区域。 接地区域也可以包括在感测区域和驱动区域之间。 屏蔽层可以由基本上高的电阻材料形成并被设置成屏蔽感测区域。 例如,可以包括黑色掩模线下方的黑色掩模线和导电线,以在像素的区域和触摸屏边界之外的触摸电路之间提供低电阻路径。

    GATE LINE DRIVER CIRCUIT FOR DISPLAY ELEMENT ARRAY
    200.
    发明申请
    GATE LINE DRIVER CIRCUIT FOR DISPLAY ELEMENT ARRAY 有权
    用于显示元件阵列的门极线驱动电路

    公开(公告)号:US20130235003A1

    公开(公告)日:2013-09-12

    申请号:US13661839

    申请日:2012-10-26

    Applicant: APPLE INC.

    CPC classification number: G09G3/3677

    Abstract: Gate line driver circuitry applies an output pulse to each of several gate lines for a display element array. The circuitry has a number of gate drivers each being coupled to drive a respective one of the gate lines. Each of the gate drivers has an output stage in which a high side transistor and a low side transistor are coupled to drive the respective gate line, responsive to at least one clock signal. A pull down transistor is coupled to discharge a control electrode of the output stage. A control circuit having a cascode amplifier is coupled to drive the pull down transistor as a function of a) at least one clock signal and b) feedback from the control electrode. Other embodiments are also described and claimed.

    Abstract translation: 栅极线驱动器电路将输出脉冲施加到用于显示元件阵列的多个栅极线中的每一个。 电路具有多个栅极驱动器,每个栅极驱动器被耦合以驱动相应的一条栅极线。 每个栅极驱动器具有输出级,其中高侧晶体管和低侧晶体管耦合以响应于至少一个时钟信号驱动相应的栅极线。 耦合下拉晶体管以放电输出级的控制电极。 具有共源共栅放大器的控制电路被耦合以作为a)至少一个时钟信号和b)来自控制电极的反馈来驱动下拉晶体管。 还描述和要求保护其他实施例。

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