Abstract:
Various embodiment of the present invention are directed to organic molecules that are reconfigurable under application of an external electric field. One organic molecule embodiment of the present invention has the structure: where L1X1 and L2X2 are optional connector groups, A represents an electron acceptor group, D represents an electron donor group, R and R′ represent spacer molecules, and R1, R2, R3, R4, R5, R6, R7, and R8 represent atoms and hydrocarbons.
Abstract translation:本发明的各种实施方案涉及在外部电场的应用下可重新配置的有机分子。 本发明的一个有机分子实施方案具有以下结构:其中L 1 X 1和X 2 X 2 X 2 是可选的连接基团,A表示电子受体基团,D表示电子给体基团,R和R'表示间隔基分子,R 1,R 2, R 3,R 4,R 5,R 6,R 7和R 7, 8 SUB>表示原子和烃。
Abstract:
Raman systems include a radiation source, a radiation detector configured to detect Raman scattered radiation, and a Raman signal-enhancing structure. The Raman signal-enhancing structure includes a first layer of Raman signal-enhancing material, a substantially monomolecular layer of molecules disposed on at least a portion of the first layer of Raman signal-enhancing material, and a second layer of Raman signal-enhancing material disposed on at least a portion of the substantially monomolecular layer of molecules. The second layer of Raman signal-enhancing material is disposed on a side of the layer of molecules opposite the first layer of Raman signal-enhancing material. Methods of performing Raman spectroscopy include providing such a Raman signal-enhancing structure, providing an analyte on the Raman signal-enhancing structure, irradiating the analyte and the structure, and detecting Raman scattered radiation.
Abstract:
NERS-active structures for use in Raman spectroscopy include protrusions extending from a surface of a substrate. A Raman signal-enhancing material is disposed on at least one surface of a first protrusion and at least one surface of a second protrusion. The Raman signal-enhancing material disposed on the first protrusion projects laterally in a direction generally towards the second protrusion, and the Raman signal-enhancing material disposed on the second protrusion projects laterally in a direction generally towards the first protrusion. At least a portion of the Raman signal-enhancing projecting from the first protrusion and at least a portion of the Raman signal-enhancing material projecting from the second protrusion may be separated by a distance of less than about 10 nanometers. Raman spectroscopy systems include such NERS-active structures, and methods for performing Raman spectroscopy include irradiating an analyte proximate such a NERS-active structure and detecting Raman-scattered radiation scattered by the analyte.
Abstract:
NERS-active structures for use in Raman spectroscopy include protrusions extending from a surface of a substrate. A Raman signal-enhancing material is disposed on at least one surface of a first protrusion and at least one surface of a second protrusion. The Raman signal-enhancing material disposed on the first protrusion projects laterally in a direction generally towards the second protrusion, and the Raman signal-enhancing material disposed on the second protrusion projects laterally in a direction generally towards the first protrusion. At least a portion of the Raman signal-enhancing projecting from the first protrusion and at least a portion of the Raman signal-enhancing material projecting from the second protrusion may be separated by a distance of less than about 10 nanometers. Raman spectroscopy systems include such NERS-active structures, and methods for performing Raman spectroscopy include irradiating an analyte proximate such a NERS-active structure and detecting Raman-scattered radiation scattered by the analyte.
Abstract:
A contact lithography system includes a patterning tool having a pattern for transfer to a substrate; and a sensor disposed on the patterning tool for sensing a magnetic pattern disposed on the substrate to determine alignment between the patterning tool and the substrate. A method of aligning a patterning tool of a contact lithography system with a substrate includes detecting a pattern of magnetic material on the substrate with a sensor on the patterning tool to determine alignment of the patterning tool with respect to the substrate.
Abstract:
SERS-active structures including features having nanoscale dimensions are disclosed, including methods for forming such SERS-active structures and methods for forming a plurality of such SERS-active structures. Methods for performing SERS using SERS-active structures also are disclosed.
Abstract:
Raman systems include a radiation source, a radiation detector, and a Raman device or signal-enhancing structure. Raman devices include a tunable resonant cavity and a Raman signal-enhancing structure coupled to the cavity. The cavity includes a first reflective member, a second reflective member, and an electro-optic material disposed between the reflective members. The electro-optic material exhibits a refractive index that varies in response to an applied electrical field. Raman signal-enhancing structures include a substantially planar layer of Raman signal-enhancing material having a major surface, a support structure extending from the major surface, and a substantially planar member comprising a Raman signal-enhancing material disposed on an end of the support structure opposite the layer of Raman signal-enhancing material. The support structure separates at least a portion of the planar member from the layer of Raman signal-enhancing material by a selected distance of less than about fifty nanometers.
Abstract:
A method of forming an electrical interconnect, which includes a first electrode, an interlayer of a programmable material disposed over at least a portion of the first electrode, and a second electrode disposed over the programmable material at a non-zero angle relative to the first electrode. The interlayer includes a modified region having differing electrical properties than the rest of the interlayer, sandwiched at the junction of the first electrode and the second electrode. The interlayer may be exposed to a focused beam to form the modified region.
Abstract:
A contact lithography system includes a patterning tool bearing a pattern; a substrate chuck for chucking a substrate to receive the pattern from the patterning tool; where the system deflects a portion of either the patterning tool or the substrate to bring the patterning tool and a portion of the substrate into contact; and a stepper for repositioning either or both of the patterning tool and substrate to align the pattern with an additional portion of the substrate to also receive the pattern. A method of performing contact lithography comprising: deflecting a portion of either a patterning tool or a substrate to bring the patterning tool and a portion of the substrate into contact; and repositioning either or both of the patterning tool and substrate to align a pattern on the patterning tool with an additional portion of the substrate to also receive the pattern.
Abstract:
Integrated radiation source/amplifying structures for use in surface enhanced Raman spectroscopy (SERS) and hyper-SERS are disclosed. The structures include a radiation source integrated with a SERS-active structure that is provided within a resonant cavity. SERS and hyper-SERS systems employing the integrated radiation source/amplifying structures are disclosed. Methods of performing SERS and hyper-SERS are also disclosed.