Self-Assembly Pattern for Semiconductor Integrated Circuit
    201.
    发明申请
    Self-Assembly Pattern for Semiconductor Integrated Circuit 有权
    半导体集成电路的自组装模式

    公开(公告)号:US20120028477A1

    公开(公告)日:2012-02-02

    申请号:US13268191

    申请日:2011-10-07

    CPC classification number: H01L21/0337 H01L21/31144 H01L21/76816

    Abstract: A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

    Abstract translation: 提供一种制造半导体器件的方法,其包括提供衬底。 材料层形成在衬底上。 聚合物层形成在材料层上。 使用聚合物层的一部分自组装纳米尺寸的特征。 使用纳米尺寸的特征对衬底进行图案化。

    LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS
    202.
    发明申请
    LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS 有权
    LITHOGRAPHY材料和LITHOGRAPHY过程

    公开(公告)号:US20110229829A1

    公开(公告)日:2011-09-22

    申请号:US13111534

    申请日:2011-05-19

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: G03F7/2041 G03F7/0046

    Abstract: An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.

    Abstract translation: 一种浸没式光刻抗蚀剂材料,包括具有第一极性的基质聚合物和具有基本上大于第一极性的第二极性的添加剂。 添加剂可以具有小于约1000道尔顿的分子量。 浸没式光刻抗蚀剂材料可具有基本上大于基质聚合物的接触角的接触角。

    Immersion lithography edge bead removal
    203.
    发明授权
    Immersion lithography edge bead removal 有权
    浸没光刻边缘珠去除

    公开(公告)号:US07691559B2

    公开(公告)日:2010-04-06

    申请号:US11337986

    申请日:2006-01-24

    Abstract: A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.

    Abstract translation: 提供了在半导体晶片上进行浸渍光刻的方法。 该方法包括在半导体晶片的表面上提供一层抗蚀剂。 接下来,边缘珠去除过程以大于1000转/分钟的速度旋转晶片,并且在晶片旋转时通过喷嘴分配溶剂。 然后,使用浸没式光刻曝光系统曝光抗蚀剂层。

    METHOD FOR PHOTORESIST PATTERN REMOVAL
    204.
    发明申请
    METHOD FOR PHOTORESIST PATTERN REMOVAL 有权
    光栅图案去除方法

    公开(公告)号:US20100075478A1

    公开(公告)日:2010-03-25

    申请号:US12564200

    申请日:2009-09-22

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    Abstract: The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.

    Abstract translation: 本公开提供了制造半导体器件的方法。 该方法包括在衬底上形成牺牲层; 在所述牺牲层上形成图案化的抗蚀剂层; 对衬底进行离子注入; 施加第一湿蚀刻溶液以除去图案化的光致抗蚀剂层; 以及施加第二湿蚀刻溶液以去除所述牺牲层。

    METHOD OF ETCHING A LAYER OF A SEMICONDUCTOR DEVICE USING AN ETCHANT LAYER
    205.
    发明申请
    METHOD OF ETCHING A LAYER OF A SEMICONDUCTOR DEVICE USING AN ETCHANT LAYER 有权
    使用蚀刻层蚀刻半导体器件层的方法

    公开(公告)号:US20100068884A1

    公开(公告)日:2010-03-18

    申请号:US12362174

    申请日:2009-01-29

    CPC classification number: H01L21/31111 H01L21/31144 H01L29/517

    Abstract: A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.

    Abstract translation: 提供了包括蚀刻工艺的半导体制造方法。 该方法包括提供衬底并在衬底上形成目标层。 在目标层上形成蚀刻剂层。 蚀刻剂层与靶层反应并蚀刻目标层的一部分。 在一个实施例中,蚀刻目标层的原子层。 然后从衬底去除蚀刻剂层。 该过程可以迭代任何次数以去除期望量的目标层。 在一个实施例中,该方法提供了减少的横向蚀刻。 蚀刻剂层可以提供在薄目标层中形成图案的改进控制,例如栅极结构的覆盖层或高k电介质层。

    Method for dual damascene process
    206.
    发明授权
    Method for dual damascene process 有权
    双镶嵌工艺的方法

    公开(公告)号:US07642184B2

    公开(公告)日:2010-01-05

    申请号:US11687093

    申请日:2007-03-16

    CPC classification number: H01L21/31144 H01L21/76808

    Abstract: The present disclosure provides a method of dual damascene processing. The method includes providing a substrate having vias formed therein; forming an under-layer in the vias and on the substrate; applying a solvent washing process to the under-layer; forming a silicon contained layer on the under-layer; patterning the silicon contained layer (SCL) to form SCL openings exposing the under-layer within the SCL openings; and etching the substrate and the under-layer within the SCL openings to form trenches.

    Abstract translation: 本公开提供了一种双镶嵌加工的方法。 该方法包括提供其中形成有通孔的基板; 在通孔和基板上形成下层; 对底层进行溶剂洗涤处理; 在下层上形成含硅层; 图案化含硅层(SCL)以形成暴露SCL开口内的下层的SCL开口; 并在SCL开口内蚀刻衬底和底层以形成沟槽。

    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY
    207.
    发明申请
    APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY 有权
    装置和方法

    公开(公告)号:US20080309891A1

    公开(公告)日:2008-12-18

    申请号:US11762651

    申请日:2007-06-13

    CPC classification number: G03F7/70341

    Abstract: Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.

    Abstract translation: 提供了使用屏蔽模块的浸渍光刻设备和方法。 一种浸没式光刻设备,包括具有成像透镜的透镜模块,位于透镜模块下方的被配置用于保持用于处理的基板的基板台,用于在透镜模块和基板之间的空间中提供浸没流体的流体模块 衬底台和用于在处理期间覆盖衬底的边缘的屏蔽模块。

    Method and system for cleaning a photomask
    208.
    发明授权
    Method and system for cleaning a photomask 有权
    清洁光掩模的方法和系统

    公开(公告)号:US07462248B2

    公开(公告)日:2008-12-09

    申请号:US11671570

    申请日:2007-02-06

    CPC classification number: G03F1/82 Y10S134/902

    Abstract: A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.

    Abstract translation: 用于清洁光掩模的方法包括用化学清洁剂清洁光掩模,将溶液引入到光掩模中,溶液被配置为与由化学清洁剂产生的残余物反应以形成不溶性沉淀物,并用流体冲洗光掩模以除去 来自光掩模的不溶性沉淀物。

    System for displaying images including a liquid crystal display panel
    210.
    发明申请
    System for displaying images including a liquid crystal display panel 有权
    用于显示包括液晶显示面板的图像的系统

    公开(公告)号:US20080123029A1

    公开(公告)日:2008-05-29

    申请号:US11987074

    申请日:2007-11-27

    CPC classification number: G02F1/133512 G02F2001/133388 G02F2201/121

    Abstract: A system for displaying images includes a liquid crystal display panel. The liquid crystal display panel comprises a color filter substrate having a light shielding layer on a peripheral area and a common electrode on a display area and the peripheral area, and an array substrate having a pixel electrode on the display area and a separate and independent electrode with a fixed voltage on the peripheral area. The liquid crystal display panel further comprises a liquid crystal layer between the color filter substrate and the array substrate.

    Abstract translation: 用于显示图像的系统包括液晶显示面板。 液晶显示面板包括在周边区域具有遮光层的彩色滤光片基板和显示区域上的公共电极以及周边区域,以及在显示区域上具有像素电极的阵列基板和独立且独立的电极 外围区域固定电压。 液晶显示面板还包括滤色器基板和阵列基板之间的液晶层。

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