Abstract:
A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.
Abstract:
An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.
Abstract:
A method of performing immersion lithography on a semiconductor wafer is provided. The method includes providing a layer of resist onto a surface of the semiconductor wafer. Next, an edge-bead removal process spins the wafer at a speed greater than 1000 revolutions per minute and dispenses solvent through a nozzle while the wafer is spinning. Then, the resist layer is exposed using an immersion lithography exposure system.
Abstract:
The present disclosure provides a method for making a semiconductor device. The method includes forming a sacrificial layer on a substrate; forming a patterned resist layer on the sacrificial layer; performing an ion implantation to the substrate; applying a first wet etch solution to remove the patterned photoresist layer; and applying a second wet etch solution to remove the sacrificial layer.
Abstract:
A method of semiconductor fabrication including an etching process is provided. The method includes providing a substrate and forming a target layer on the substrate. An etchant layer is formed on the target layer. The etchant layer reacts with the target layer and etches a portion of the target layer. In an embodiment, an atomic layer of the target layer is etched. The etchant layer is then removed from the substrate. The process may be iterated any number of times to remove a desired amount of the target layer. In an embodiment, the method provides for decreased lateral etching. The etchant layer may provide for improved control in forming patterns in thin target layers such as, capping layers or high-k dielectric layers of a gate structure.
Abstract:
The present disclosure provides a method of dual damascene processing. The method includes providing a substrate having vias formed therein; forming an under-layer in the vias and on the substrate; applying a solvent washing process to the under-layer; forming a silicon contained layer on the under-layer; patterning the silicon contained layer (SCL) to form SCL openings exposing the under-layer within the SCL openings; and etching the substrate and the under-layer within the SCL openings to form trenches.
Abstract:
Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing.
Abstract:
A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble precipitates, and rinsing the photomask with a fluid to remove the insoluble precipitates from the photomask.
Abstract:
A system for displaying images includes a liquid crystal display panel. The liquid crystal display panel comprises a color filter substrate having a light shielding layer on a peripheral area and a common electrode on a display area and the peripheral area, and an array substrate having a pixel electrode on the display area and a separate and independent electrode with a fixed voltage on the peripheral area. The liquid crystal display panel further comprises a liquid crystal layer between the color filter substrate and the array substrate.