公开(公告)号：US4108211A

公开(公告)日：1978-08-22

申请号：US678736

申请日：1976-04-21

Applicant: Hitoshi Tanaka

Inventor： Hitoshi Tanaka

IPC: A61B1/005 ,  F16L11/18

CPC classification number: A61B1/0055

Abstract: An articulated tube structure to be arranged next to the head of a fiberoptic endoscope to permit same to be tilted in either of four different directions by manipulation of pull wires. The tube structure comprises a series of relatively short elementary tubes each having two pairs of lugs on its opposite ends which are angularly displaced 90.degree. from each other. These elementary tubes are jointed in spaced end-to-end relationship by wire support members passing through their overlapped lugs. The wire support members have holes in their ends located inside the tube structure, and the pull wires extend through the holes with clearance. A recessed inner tube can be nested in each elementary tube to eliminate unevenness of the internal surfaces of the tube structure.

Abstract translation: 布置在光纤内窥镜的头部旁边的铰接管结构，以允许其通过拉线的操纵在四个不同的方向上倾斜。 管结构包括一系列相对短的基本管，每个管在其相对端上具有彼此成90度角度位移的两对突出部。 这些基本管子通过穿过其重叠的凸耳的电线支撑构件以间隔的端对端关系连接。 线支撑构件的端部具有位于管结构内部的孔，并且拉线通过间隙延伸穿过孔。 凹入的内管可以嵌套在每个基本管中，以消除管结构内表面的不均匀。

公开(公告)号：US3995300A

公开(公告)日：1976-11-30

申请号：US497333

申请日：1974-08-14

Applicant: Hitoshi Masumura ,  Shinobu Fujiwara ,  Hitoshi Tanaka

Inventor： Hitoshi Masumura ,  Shinobu Fujiwara ,  Hitoshi Tanaka

IPC: C04B35/465 ,  C04B35/475 ,  H01G4/12 ,  H01L29/95

CPC classification number: H01G4/1272 ,  C04B35/465 ,  C04B35/475

Abstract: An improved reduction-reoxidation type semiconducting ceramic capacitor and the method for producing the same are disclosed. The main components of the substrate of the capacitor are CaTiO.sub.3, SrTiO.sub.3 and Bi.sub.2 O.sub.3.xTiO.sub.2. Said substrate also contains at least one member selected from the group consisting of manganese, cobalt, nickel, chromium, vanadium, niobium, tantalum, lanthanum and cerium ions in total amounts of 0.025 to 0.4% by weight. The capacitor according to the present invention excels, in the temperature independency of the capacitance and tan .delta., etc.

Abstract translation: 公开了一种改进的还原再氧化型半导体陶瓷电容器及其制造方法。 电容器基板的主要部件是CaTiO3，SrTiO3和Bi2O3.xTiO2。 所述基材还含有总量为0.025〜0.4重量％的选自锰，钴，镍，铬，钒，铌，钽，镧和铈离子中的至少一种。 根据本发明的电容器在电容和tanδ等的独立性方面优异。

公开(公告)号：US08892337B2

公开(公告)日：2014-11-18

申请号：US13386260

申请日：2011-03-28

Applicant: Shota Kitano ,  Hitoshi Tanaka ,  Isao Nakajima ,  Yoshihisa Oda ,  Masashi Hakariya ,  Kiyotaka Kushihama ,  Kazuyuki Noda ,  Akihiro Katayama ,  Yuichi Kohara ,  Katsumi Adachi

Inventor： Shota Kitano ,  Hitoshi Tanaka ,  Isao Nakajima ,  Yoshihisa Oda ,  Masashi Hakariya ,  Kiyotaka Kushihama ,  Kazuyuki Noda ,  Akihiro Katayama ,  Yuichi Kohara ,  Katsumi Adachi

IPC: F02D41/22 ,  F02D41/30 ,  F02D41/14 ,  F02D41/12 ,  F02D41/00

CPC classification number: F02D41/0085 ,  F02D41/126 ,  F02D41/1441 ,  F02D41/1443 ,  F02D41/1456 ,  F02D41/1498 ,  F02D2200/0816 ,  F02D2200/1012

Abstract: An apparatus for detecting imbalance abnormality in an air-fuel ratio between cylinders in a multi-cylinder internal combustion engine according to the present invention increases a fuel injection quantity to a predetermined target cylinder to detect imbalance abnormality in an air-fuel ratio between cylinders at least based upon a rotation variation of the target cylinder after increasing the fuel injection quantity. The increase in the fuel injection quantity is carried out in the middle of performing the post-fuel-cut rich control. Since timing of the post-fuel cut rich control is used to increase the fuel injection quantity, the exhaust emission deterioration due to abnormality detection execution can be prevented as much as possible.

Abstract translation: 根据本发明的用于检测多缸内燃机中的气缸之间的空燃比的不平衡异常的装置将预定目标气缸的燃料喷射量增加以检测气缸之间的空燃比的不平衡异常 至少基于在增加燃料喷射量之后目标气缸的旋转变化。 燃料喷射量的增加在执行后燃料切断浓缩控制的中间进行。 由于使用后燃料切断浓缩控制的定时来增加燃料喷射量，所以可以尽可能地防止由异常检测执行引起的废气劣化。

公开(公告)号：US08773195B2

公开(公告)日：2014-07-08

申请号：US12662044

申请日：2010-03-29

Applicant: Shinichi Miyatake ,  Seiji Narui ,  Hitoshi Tanaka

Inventor： Shinichi Miyatake ,  Seiji Narui ,  Hitoshi Tanaka

IPC: H03K3/01 ,  G05F3/02

CPC classification number: G05F1/463 ,  G05F1/462 ,  G05F3/205 ,  G05F3/242 ,  G11C5/147

Abstract: A semiconductor device prevents the ON current of a complementary field effect transistor from varying with changes in ambient temperature. The semiconductor device includes: a buffer circuit that generates a power-supply voltage of a CMOS; a first replica transistor that is a replica of a p-channel MOS transistor forming the CMOS, and is diode-connected; a second replica transistor that is a replica of an n-channel MOS transistor forming the CMOS, and is diode-connected; and a voltage controller that controls the voltage between the anode and cathode of the replica transistors so that the current value of the current flowing into the replica transistor becomes equal to a given target value. In this semiconductor device, the buffer circuit generates the power-supply voltage, with the target voltage being a voltage that is controlled by the voltage controller.

Abstract translation: 半导体器件防止互补场效应晶体管的导通电流随着环境温度的变化而变化。 半导体器件包括：产生CMOS的电源电压的缓冲电路; 第一复制晶体管，其是形成CMOS的p沟道MOS晶体管的复制品，并且是二极管连接的; 第二复制晶体管，其是形成CMOS的n沟道MOS晶体管的复制品，并且是二极管连接的; 以及电压控制器，其控制复制晶体管的阳极和阴极之间的电压，使得流入复制晶体管的电流的电流值等于给定的目标值。 在该半导体器件中，缓冲电路产生电源电压，目标电压是由电压控制器控制的电压。

公开(公告)号：US08446214B2

公开(公告)日：2013-05-21

申请号：US13283882

申请日：2011-10-28

Applicant: Hitoshi Tanaka ,  Kazutaka Miyano

Inventor： Hitoshi Tanaka ,  Kazutaka Miyano

IPC: G05F1/10 ,  G05F3/02

CPC classification number: H03K3/012 ,  H01L25/00 ,  H01L2924/0002 ,  H02M3/155 ,  H02M2001/0029 ,  H01L2924/00

Abstract: A semiconductor device includes a regulator including an operational amplifier configured of a current mirror and generating the second voltage V2 from a first voltage V1; and a control circuit that generates the current control signal OVDR, makes a current that is flowed by the current mirror increase by a first transition of the current control signal OVDR, and makes the current that is flowed by the current mirror decrease by a second transition of the current control signal OVDR. The control circuit includes a slew-rate processing unit that makes a second slew rate of the current control signal OVDR related to the second transition be smaller than a first slew rate of the current control signal OVDR related to the first transition.

公开(公告)号：USD681715S1

公开(公告)日：2013-05-07

申请号：US29384266

申请日：2011-01-28

Applicant: Hitoshi Tanaka

Designer： Hitoshi Tanaka

公开(公告)号：US20120297866A1

公开(公告)日：2012-11-29

申请号：US13477647

申请日：2012-05-22

Applicant: Hitoshi Tanaka ,  Isao Nakajima ,  Toshihiro Kato ,  Takefumi Uchida ,  Yoshihisa Oda

Inventor： Hitoshi Tanaka ,  Isao Nakajima ,  Toshihiro Kato ,  Takefumi Uchida ,  Yoshihisa Oda

IPC: G01M15/04

CPC classification number: G01M15/104

Abstract: An apparatus for detecting an abnormal air-fuel ratio variation, includes an abnormality detecting unit that detects an abnormal variation in each of a plurality of fuel injection valves on the basis of an injection ratio between the plurality of fuel injection valves, a fluctuation in the output before the injection ratio is changed and the fluctuation in the output after the injection ratio is changed; and a setting unit that corrects the abnormality determination threshold for each of the plurality of fuel injection valves on the basis of the injection ratio.

Abstract translation: 用于检测异常空燃比变化的装置包括异常检测单元，其基于多个燃料喷射阀之间的喷射比来检测多个燃料喷射阀中的每一个的异常变化， 在喷射比例变化之前的输出和喷射比之后的输出变化; 以及设定单元，其基于喷射率校正所述多个燃料喷射阀中的每一个的异常判定阈值。

公开(公告)号：US20110282004A1

公开(公告)日：2011-11-17

申请号：US13138210

申请日：2010-01-25

Applicant: Hitoshi Tanaka

Inventor： Hitoshi Tanaka

IPC: C08F20/28 ,  C07D317/34 ,  C08F8/04 ,  C08F8/12 ,  C08F8/32

CPC classification number: C07D317/34 ,  C08F8/02 ,  C08F8/04 ,  C08F8/12 ,  C08F8/30 ,  C08F24/00

Abstract: This invention provides a polyfunctional polymer having high stereoregularity, in particular, isotacticity, and provides a production process thereof. The present invention relates to a polymer having, in a molecule, a repeating unit represented by General Formula (2): wherein R1 and R2 are different, and each represents a hydrogen atom, an alkyl group and an aryl group; * represents an asymmetrical carbon, the polymer containing meso diad (m) and racemo diad (r) at a proportion of 60:40 to 100:0 (m:r). The invention also relates to chemical modifications and a production process of the polymer.

Abstract translation: 本发明提供具有高立构规整性，特别是全同立构规整度的多官能聚合物，并提供其制备方法。 本发明涉及在分子中具有由通式（2）表示的重复单元的聚合物：其中R1和R2不同，并且各自表示氢原子，烷基和芳基; *表示不对称碳，聚合物含有以60:40至100:0（m:r）的比例含有内消旋二（m）和赛摩摩二烯（r）。 本发明还涉及聚合物的化学改性和生产方法。

公开(公告)号：US20110221513A1

公开(公告)日：2011-09-15

申请号：US13064237

申请日：2011-03-11

Applicant: Hiroki Fujisawa ,  Shuichi Kubouchi ,  Hitoshi Tanaka

Inventor： Hiroki Fujisawa ,  Shuichi Kubouchi ,  Hitoshi Tanaka

IPC: G05F1/10

CPC classification number: G05F1/46 ,  G11C5/145 ,  H02M1/15 ,  H02M3/07 ,  H02M2001/0045

Abstract: A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.

Abstract translation: 一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器 电路包括连接到升压电路的输出端子的可变电阻器。 可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

公开(公告)号：US07932807B2

公开(公告)日：2011-04-26

申请号：US12396942

申请日：2009-03-03

Applicant: Hiroyuki Sato ,  Makoto Numata ,  Yo Saito ,  Hitoshi Tanaka ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

Inventor： Hiroyuki Sato ,  Makoto Numata ,  Yo Saito ,  Hitoshi Tanaka ,  Goro Takeuchi ,  Osamu Taguchi ,  Ryuichi Tanaka

IPC: H01C7/10

CPC classification number: H01C7/102

Abstract: A first varistor section includes a first face of an element body, and a third face facing the first face. The first varistor section has a first varistor element body, a first varistor electrode electrically connected to a first external electrode, and a second varistor electrode electrically connected to a second external electrode. A heat radiation section has a first heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the first and third external electrodes, a second heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the second and fourth external electrodes, and an insulating layer located between the first heat radiation portion and the second heat radiation portion and electrically insulating the first heat radiation portion and the second heat radiation portion from each other. The first heat radiation portion and the second heat radiation portion contain a metal.

Abstract translation: 第一变阻器部分包括元件主体的第一面和面向第一面的第三面。 第一变阻器部具有第一变阻器元件本体，与第一外部电极电连接的第一变阻器电极和与第二外部电极电连接的第二变阻器电极。 散热部具有与第一可变电阻部的第三面保持接触并与第一和第三外部电极电连接的第一散热部，与第一可变电阻部的第三面保持接触的第二散热部 并且电连接到第二和第四外部电极，以及位于第一散热部分和第二散热部分之间的绝缘层，并且使第一散热部分和第二散热部分彼此电绝缘。 第一散热部和第二散热部包含金属。