公开(公告)号：US08633758B2

公开(公告)日：2014-01-21

申请号：US13064237

申请日：2011-03-11

Applicant: Hiroki Fujisawa ,  Shuichi Kubouchi ,  Hitoshi Tanaka

Inventor： Hiroki Fujisawa ,  Shuichi Kubouchi ,  Hitoshi Tanaka

IPC: G05F1/10 ,  G05F3/02

CPC classification number: G05F1/46 ,  G11C5/145 ,  H02M1/15 ,  H02M3/07 ,  H02M2001/0045

Abstract: A semiconductor device includes a boosting circuit that boosts an internal power supply voltage in a boosting range according to an external power supply voltage, an external voltage-level comparison circuit that compares the external power supply voltage and a predetermined reference voltage, and a variable resistor circuit that includes a variable resistor connected to an output terminal of the boosting circuit. The variable resistor circuit controls a resistance value of the variable resistor based on a comparison result of the external voltage-level comparison circuit.

Abstract translation: 一种半导体器件包括：升压电路，其根据外部电源电压升压升压范围内的内部电源电压;将外部电源电压与规定的基准电压进行比较的外部电压电平比较电路;以及可变电阻器 电路包括连接到升压电路的输出端子的可变电阻器。 可变电阻电路基于外部电压电平比较电路的比较结果来控制可变电阻器的电阻值。

公开(公告)号：US08620564B2

公开(公告)日：2013-12-31

申请号：US13480921

申请日：2012-05-25

Applicant: Masashi Hakariya ,  Isao Nakajima ,  Yoshihisa Oda ,  Hitoshi Tanaka ,  Kiyotaka Kushihama ,  Shota Kitano ,  Kazuyuki Noda ,  Katsumi Adachi ,  Yuichi Kohara ,  Akihiro Katayama

Inventor： Masashi Hakariya ,  Isao Nakajima ,  Yoshihisa Oda ,  Hitoshi Tanaka ,  Kiyotaka Kushihama ,  Shota Kitano ,  Kazuyuki Noda ,  Katsumi Adachi ,  Yuichi Kohara ,  Akihiro Katayama

IPC: B60T7/12 ,  G05D1/00 ,  G06F7/00 ,  G06F17/00

CPC classification number: F02D41/1498 ,  F02D41/0085 ,  F02D41/1495 ,  F02D41/22 ,  F02D41/3076

Abstract: An abnormality detection apparatus for a multi-cylinder internal combustion engine changes a fuel injection quantity of a predetermined target cylinder to detect an abnormality of an internal combustion engine based on values of rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity. The abnormality detection apparatus corrects the values of the rotational variations relating to the target cylinder detected before and after the change of the fuel injection quantity based on at least one of the number of revolutions of the engine and an engine load at a corresponding detection time.

Abstract translation: 用于多气缸内燃机的异常检测装置根据与在目标气缸的变化之前和之后检测到的目标气缸相关的旋转变化的值来改变预定目标气缸的燃料喷射量以检测内燃机的异常 燃油喷射量。 异常检测装置在相应的检测时间的基础上，基于发动机的转数和发动机负荷中的至少一方来校正与燃料喷射量的变化前后检测到的目标气缸的旋转变动的值。

公开(公告)号：US08493132B2

公开(公告)日：2013-07-23

申请号：US12052422

申请日：2008-03-20

Applicant: Koichiro Hayashi ,  Hitoshi Tanaka

Inventor： Koichiro Hayashi ,  Hitoshi Tanaka

IPC: G05F1/10

CPC classification number: G05F3/02 ,  G05F1/62 ,  G11C5/145 ,  G11C11/4074 ,  H02M3/07

Abstract: A supply voltage generating circuit that enables a reduction in chip area includes: a booster for outputting a boosted voltage upon generating the boosted voltage by charge pumping of a capacitor element; a power-supply step-down unit for stepping down voltage of an external power supply to a voltage within a breakdown-voltage range of the capacitor element, and applying the stepped-down voltage to the power supply of the booster; and a switch element for switching between application of the external power supply to the power supply of the booster directly or via the power-supply step-down unit. The booster comprises multiple stages of booster circuits. The thicknesses of gate oxide films of capacitor elements constituted by MOS transistors included in respective ones of the booster circuits are the same and are made smaller than the thickness of a gate oxide film of a MOS transistor included in a load circuit having the output of the booster at its power supply.

公开(公告)号：US08471673B2

公开(公告)日：2013-06-25

申请号：US13545505

申请日：2012-07-10

Applicant: Hitoshi Tanaka ,  Katsunari Moriai ,  Takahiro Itami

Inventor： Hitoshi Tanaka ,  Katsunari Moriai ,  Takahiro Itami

IPC: H01C7/10

CPC classification number: H01C1/14 ,  H01C7/00 ,  H01C7/10 ,  H01C17/28 ,  Y10T29/49082 ,  Y10T29/49085

Abstract: A varistor is provided with a varistor element body, a plurality of internal electrodes arranged in the varistor element body so as to sandwich a partial region of the varistor element body between them, and a plurality of external electrodes arranged on the surface of the varistor element body and connected to the corresponding internal electrodes. The external electrode has a sintered electrode layer formed by attaching an electroconductive paste containing an alkali metal to the surface of the varistor element body and sintering it. The varistor element body has a high-resistance region formed by diffusing the alkali metal in the electroconductive paste into the varistor element body from an interface between the surface of the varistor element body and the sintered electrode layer.

Abstract translation: 变阻器设置有可变电阻元件主体，多个内部电极，布置在可变电阻元件主体中，以将可变电阻元件主体的局部区域夹在它们之间;以及多个外部电极，布置在可变电阻元件的表面上 并连接到相应的内部电极。 外部电极具有烧结电极层，该烧结电极层通过将含有碱金属的导电膏附着到可变电阻元件体的表面并烧结而形成。 可变电阻元件体具有通过将可变电阻元件体的表面与烧结电极层之间的界面将导电浆中的碱金属扩散到可变电阻元件体中而形成的高电阻区域。

公开(公告)号：US20100164607A1

公开(公告)日：2010-07-01

申请号：US12647259

申请日：2009-12-24

Applicant: Shinichi Miyatake ,  Seiji Narui ,  Hitoshi Tanaka

Inventor： Shinichi Miyatake ,  Seiji Narui ,  Hitoshi Tanaka

IPC: G05F1/10

CPC classification number: G05F3/205 ,  G05F1/46

Abstract: To provide a semiconductor device including: a MOS transistor formed in a semiconductor substrate and have a threshold voltage to be adjusted, a replica transistor of the MOS transistor, a monitoring circuit monitors a gate/source voltage needed when the replica transistor flows a current having a given designed value, a negative voltage pumping circuit generates a substrate voltage of the MOS transistor, based on an output from the monitoring circuit, and a limiting circuit defines the operation of the negative voltage pumping circuit, regardless of a monitoring result of the monitoring circuit, in response to an excess of the substrate voltage with respect to a predetermined value.

Abstract translation: 为了提供一种半导体器件，包括：形成在半导体衬底中并具有要调节的阈值电压的MOS晶体管，MOS晶体管的复制晶体管，监视电路监视当复制晶体管流过具有 给定的设计值，负电压泵浦电路基于监控电路的输出产生MOS晶体管的衬底电压，并且限制电路定义负电压抽运电路的操作，而不管监视的监视结果如何 电路，响应于相对于预定值的衬底电压的过量。

公开(公告)号：US07712395B2

公开(公告)日：2010-05-11

申请号：US11225202

申请日：2005-09-14

Applicant: Fuminori Suzuki ,  Hitoshi Tanaka

Inventor： Fuminori Suzuki ,  Hitoshi Tanaka

IPC: F16H57/02

CPC classification number: F16H61/0009 ,  B60R16/0207 ,  F16H57/04 ,  F16H57/0412 ,  Y10T74/2186

Abstract: An automatic transmission includes a pressure adjusting unit that controls hydraulic pressure supplied to a transmission mechanism by the operation of a solenoid valve. A housing has a heat radiating portion for radiating heat to the outside and houses the pressure adjusting unit. A first connector is so arranged as to pass through the housing and has a control circuit unit electrically connected to the solenoid valve of the pressure adjusting unit. A second connector is electrically connected to an engine control unit outside the housing and engages with the first connector and the heat radiating portion. The second connector is electrically connected to the control circuit unit and presses the first connector onto the heat radiating portion.

Abstract translation: 自动变速器包括压力调节单元，其通过电磁阀的操作来控制供给变速机构的液压。 壳体具有用于将热量散发到外部并容纳压力调节单元的散热部分。 第一连接器布置成穿过壳体并具有电连接到压力调节单元的电磁阀的控制电路单元。 第二连接器电连接到壳体外部的发动机控制单元，并与第一连接器和散热部分接合。 第二连接器电连接到控制电路单元并将第一连接器按压到散热部分上。

公开(公告)号：US20100112776A1

公开(公告)日：2010-05-06

申请号：US12685408

申请日：2010-01-11

Applicant: Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

Inventor： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC: H01L21/02 ,  B05D5/12

CPC classification number: H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

Abstract: A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

Abstract translation: 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20090116329A1

公开(公告)日：2009-05-07

申请号：US12259846

申请日：2008-10-28

Applicant: Koichiro HAYASHI ,  Hitoshi Tanaka

Inventor： Koichiro HAYASHI ,  Hitoshi Tanaka

IPC: G11C5/14 ,  G05F1/10

CPC classification number: G11C5/145 ,  G11C8/08 ,  G11C11/4074 ,  G11C11/4085 ,  H02M3/07

Abstract: An internal-voltage generating circuit includes a plurality of generating units connected in cascade, out of the plurality of generating units, a generating unit of relatively lower level is activated by an output of a generating unit of relatively higher level. According to the present invention, because the plural voltage generating units are connected in cascade, the voltage generating unit of lower level is not activated unless the voltage generating unit of higher level is activated. Therefore, at least the voltage generating unit of the second level and the subsequent voltage generating units consume very small power during the standby time. Consequently, total power consumption of the internal-voltage generating circuit can be reduced.

Abstract translation: 一个内部电压产生电路包括串联连接的多个发生单元，在多个发电单元中，相对较低电平的发电单元由相对较高电平的发电单元的输出激活。 根据本发明，由于多个电压发生单元串联连接，所以低电平产生单元不被激活，除非上电电压产生单元被激活。 因此，至少第二级的电压产生单元和随后的电压产生单元在待机时间内消耗非常小的功率。 因此，可以降低内部电压产生电路的总功耗。

公开(公告)号：US07515496B2

公开(公告)日：2009-04-07

申请号：US11984352

申请日：2007-11-16

Applicant: Yoshinori Matsui ,  Hitoshi Tanaka ,  Kazuhiko Kajigaya ,  Akiyoshi Yamamoto ,  Tadashi Onodera

Inventor： Yoshinori Matsui ,  Hitoshi Tanaka ,  Kazuhiko Kajigaya ,  Akiyoshi Yamamoto ,  Tadashi Onodera

IPC: G11C7/00

CPC classification number: G11C11/406 ,  G11C11/40615

Abstract: A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.

Abstract translation: 一种自刷新定时器电路，用于产生用于控制半导体存储器件的自刷新操作的定时器周期，包括：用于输出基于二极管特性的具有温度依赖性的电压的温度相关电压源; 控制电流产生电路，用于将温度依赖电压源的输出电压施加到具有二极管特性的温度检测装置，并产生与流过温度检测装置的电流成比例的控制电流; 以及定时器周期发生电路，用于产生与控制电流的大小成反比的定时器周期。

公开(公告)号：US20090002048A1

公开(公告)日：2009-01-01

申请号：US12230489

申请日：2008-08-29

Applicant: Hiroki Fujisawa ,  Masayuki Nakamura ,  Hitoshi Tanaka

Inventor： Hiroki Fujisawa ,  Masayuki Nakamura ,  Hitoshi Tanaka

IPC: H03L5/00

CPC classification number: G05F3/30

Abstract: Disclosed is a reference voltage generating circuit which includes resistors R0, R0 and R3, a differential amplifier A1 and transistors Q1, Q2 and Q3. The collectors of the transistors Q1 and Q2 are connected to differential input terminals of the differential amplifier, while one ends of the R0, R0 and R3 are connected in common to an output of the differential amplifier A1. The other ends of the two resistors R0 are connected in common to the collectors of the transistors Q1 and Q2, while the other end of the resistor R1 is connected to the collector and the base of the transistor Q3, which transistor Q3 has the base connected to the bases of the transistors Q1 and Q2. The emitter size ratio of the transistors Q1 and Q2 is set to 1:N. A current of a value approximately equal to that of the collector current of the transistor Q1 or Q2 and a current with a positive temperature coefficient larger than the first-stated current are caused to flow through the resistor R1. The reference voltage generating circuit outputs a voltage corresponding to the sum of a voltage generated across both ends of the resistor R1 and a base-to-emitter voltage VBE3 of the transistor Q3.

Abstract translation: 公开了一种参考电压产生电路，其包括电阻器R0，R0和R3，差分放大器A1和晶体管Q1，Q2和Q3。 晶体管Q1和Q2的集电极连接到差分放大器的差分输入端，而R0，R0和R3的一端共同连接到差分放大器A1的输出端。 两个电阻R0的另一端共同连接到晶体管Q1和Q2的集电极，而电阻器R1的另一端连接到晶体管Q3的集电极和基极，晶体管Q3的基极连接 到晶体管Q1和Q2的基极。 晶体管Q1和Q2的发射极尺寸比设定为1：N。 导致大致等于晶体管Q1或Q2的集电极电流的值的电流和大于先前电流的正温度系数的电流流过电阻器R1。 参考电压产生电路输出与电阻器R1两端产生的电压和晶体管Q3的基极 - 发射极电压VBE3之和的和相对应的电压。