Memory Systems, Modules, and Methods for Improved Capacity

    公开(公告)号:US20210294531A1

    公开(公告)日:2021-09-23

    申请号:US17235629

    申请日:2021-04-20

    Applicant: Rambus Inc.

    Abstract: A memory module with multiple memory devices includes a buffer system that manages communication between a memory controller and the memory devices. The memory module additionally includes a command input port to receive command and address signals from a controller and, also in support of capacity extensions, a command relay circuit coupled to the command port to convey the commands and addresses from the memory module to another module or modules. Relaying commands and addresses introduces a delay, and the buffer system that manages communication between the memory controller and the memory devices can be configured to time data communication to account for that delay.

    Memory system using asymmetric source-synchronous clocking

    公开(公告)号:US11068017B2

    公开(公告)日:2021-07-20

    申请号:US15863703

    申请日:2018-01-05

    Applicant: Rambus Inc.

    Abstract: The disclosed embodiments relate to a memory system that generates a multiplied timing signal from a reference timing signal. During operation, the system receives a reference timing signal. Next, the system produces a multiplied timing signal from the reference timing signal by generating a burst comprising multiple timing events for each timing event in the reference timing signal, wherein consecutive timing events in each burst of timing events are separated by a bit time. Then, as the reference clock frequency changes, the interval between bursts of timing events changes while the bit time remains substantially constant.

    Memory module and system supporting parallel and serial access modes

    公开(公告)号:US11049532B2

    公开(公告)日:2021-06-29

    申请号:US15721755

    申请日:2017-09-30

    Applicant: Rambus Inc.

    Abstract: A memory module can be programmed to deliver relatively wide, low-latency data in a first access mode, or to sacrifice some latency in return for a narrower data width, a narrower command width, or both, in a second access mode. The narrow, higher-latency mode requires fewer connections and traces. A controller can therefore support more modules, and thus increased system capacity. Programmable modules thus allow computer manufacturers to strike a desired balance between memory latency, capacity, and cost.

    Periodic Calibration For Communication Channels By Drift Tracking

    公开(公告)号:US20210091862A1

    公开(公告)日:2021-03-25

    申请号:US17024835

    申请日:2020-09-18

    Applicant: Rambus Inc.

    Abstract: A method and system that provides for execution of a first calibration sequence, such as upon initialization of a system, to establish an operation value, which utilizes an algorithm intended to be exhaustive, and executing a second calibration sequence from time to time, to measure drift in the parameter, and to update the operation value in response to the measured drift. The second calibration sequence utilizes less resources of the communication channel than does the first calibration sequence. In one embodiment, the first calibration sequence for measurement and convergence on the operation value utilizes long calibration patterns, such as codes that are greater than 30 bytes, or pseudorandom bit sequences having lengths of 2N−1 bits, where N is equal to or greater than 7, while the second calibration sequence utilizes short calibration patterns, such as fixed codes less than 16 bytes, and for example as short as 2 bytes long.

    MEMORY REPAIR METHOD AND APPARATUS BASED ON ERROR CODE TRACKING

    公开(公告)号:US20200371868A1

    公开(公告)日:2020-11-26

    申请号:US16872929

    申请日:2020-05-12

    Applicant: Rambus Inc.

    Abstract: A memory module is disclosed that includes a substrate, a memory device that outputs read data, and a buffer. The buffer has a primary interface for transferring the read data to a memory controller and a secondary interface coupled to the memory device to receive the read data. The buffer includes error logic to identify an error in the received read data and to identify a storage cell location in the memory device associated with the error. Repair logic maps a replacement storage element as a substitute storage element for the storage cell location associated with the error.

    Memory access during memory calibration

    公开(公告)号:US10810139B2

    公开(公告)日:2020-10-20

    申请号:US16266526

    申请日:2019-02-04

    Applicant: Rambus Inc.

    Abstract: A multi-rank memory system in which calibration operations are performed between a memory controller and one rank of memory while data is transferred between the controller and other ranks of memory. A memory controller performs a calibration operation that calibrates parameters pertaining to transmission of data via a first data bus between the memory controller and a memory device in a first rank of memory. While the controller performs the calibration operation, the controller also transfers data with a memory device in a second rank of memory via a second data bus.

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