公开(公告)号：US20250142894A1

公开(公告)日：2025-05-01

申请号：US18752024

申请日：2024-06-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Huije RYU ,  Junyoung KWON ,  Changhyun KIM ,  Minsu SEOL

IPC: H01L29/786 ,  H01L21/3115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: A semiconductor device may include a two-dimensional (2D) material layer extending in a first direction, a source electrode and a drain electrode each electrically connected to the 2D material layer, an insulating layer arranged on the 2D material layer, and a gate electrode arranged apart from the 2D material layer in a second direction perpendicular to the first direction, wherein the insulating layer includes a dopant.

公开(公告)号：US20250142823A1

公开(公告)日：2025-05-01

申请号：US18755840

申请日：2024-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Geunwon Lim ,  Youngho Kwon ,  Chungjin Kim ,  Jungho Lee ,  Yunkyu Jung

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A semiconductor device may include a plate layer, gate electrodes spaced apart from each other in a first direction perpendicular to an upper surface of the plate layer on the plate layer, extending to different lengths in a second direction perpendicular to the first direction and forming step regions, channel structures penetrating through the gate electrodes, extending in the first direction, and each including a channel layer, isolation regions penetrating through the gate electrodes and extending in the first direction and the second direction, sacrificial insulating layers on the same levels as levels of the gate electrodes, respectively, a through-via penetrating through the sacrificial insulating layers and extending in the first direction, a dam structure surrounding the through-via, and a guard structure spaced apart from the dam structure horizontally and having a closed loop shape surrounding the dam structure on a plan view.

公开(公告)号：US20250142812A1

公开(公告)日：2025-05-01

申请号：US18896219

申请日：2024-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suyoun Song ,  Jamin Koo ,  Beomseo Kim ,  Jonghyeok Kim ,  Daeyoung Moon ,  Changwoo Seo ,  Wonseok Yoo ,  Chunhyung Chung

IPC: H10B12/00 ,  H01L29/423

Abstract: A semiconductor device includes a substrate including a first active region, a bit line on the substrate to cross the first active region, a bit line contact between the bit line and the first active region and in a bit line contact hole extending into the substrate, a bit line contact spacer on a sidewall of the bit line contact within the bit line contact hole, a bit line spacer on a sidewall of the bit line, an anti-oxidation layer between the sidewall of the bit line and the bit line spacer and between the sidewall of the bit line contact and the bit line spacer, and a buried contact in a buried contact hole, passing through the bit line contact spacer, and contacting the first active region, in which the anti-oxidation layer includes a silicon-containing material including SiOx, where 0

公开(公告)号：US20250142809A1

公开(公告)日：2025-05-01

申请号：US18760232

申请日：2024-07-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangin Kim ,  Kyounghwan Kim

IPC: H10B12/00

Abstract: A semiconductor device includes a gate trench extending in a first direction on a substrate, first active fins protruding from a bottom of the gate trench, an upper surface of each of the first active fins having a first vertical level, a second active fin in the gate trench, an upper surface of the second active fin having a second vertical level higher than the first vertical level, and a gate structure on an isolation pattern filling the gate trench. A first portion of the gate structure overlapping with upper portions of the first active fins includes a first electrode. A second portion of the gate structure overlapping an upper portion of the second active fin includes a second electrode. A vertical height of the second electrode is greater than a vertical height of the first electrode.

公开(公告)号：US20250142472A1

公开(公告)日：2025-05-01

申请号：US18925961

申请日：2024-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghoon CHOI ,  Hyewon YANG ,  Jaewon LEE

IPC: H04W52/02 ,  H04W8/22 ,  H04W48/20

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. A method performed by a user equipment (UE) in a wireless communication system includes transmitting, to a base station, wake-up signal reception-related UE capability information, receiving, from the base station, wake-up signal reception-related information, and performing measurement on at least one neighbor cell by one of a wake-up receiver of the UE and a main radio of the UE based on the wake-up signal reception-related information.

公开(公告)号：US20250142453A1

公开(公告)日：2025-05-01

申请号：US18916547

申请日：2024-10-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Matthew Tonnemacher ,  Bilal Sadiq

IPC: H04W48/08 ,  H04W48/16 ,  H04W84/12

Abstract: An embodiment includes a station (STA) in a wireless network, the STA comprising a memory and a processor coupled to the memory, the processor configured to receive, from an origin STA, a first discovery frame that includes one or more attributes intended for proxied transmission, generate a second discovery frame that includes the one or more attributes intended for proxied transmission based on the first discovery frame and appends additional information, wherein the additional information includes an indication that the one or more attributes are associated with the origin STA and that the one or more attributes are being transmitted by proxy transmission, and wherein the additional information includes address information for the origin STA, and transmit, to one or more other STAs, the second discovery frame.

公开(公告)号：US20250142433A1

公开(公告)日：2025-05-01

申请号：US18836637

申请日：2023-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Aby Kanneath ABRAHAM ,  Chadi KHIRALLAH ,  Hyunjeong KANG ,  Sangyeob JUNG

IPC: H04W36/24 ,  H04W36/00

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. Embodiments herein disclose methods for handling a slice based cell reselection in a wireless network (1000) by a UE (100). The method includes evaluating a cell reselection criteria based on a relative reselection priority between frequencies derived using a slice priority of at least one slice group supported on a frequency. The at least one slice group comprises a highest priority slice group supported by the frequency as an input. Further, the method includes determining a change in the relative reselection priority upon detecting that a best cell or a highest ranked cell in the frequency does not support the at least one slice group associated with a highest priority. Further, the method includes re-evaluating the cell reselection criteria based on the determined changed in the relative reselection priority.

公开(公告)号：US20250142320A1

公开(公告)日：2025-05-01

申请号：US18834429

申请日：2023-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sapan Pramodkumar SHAH ,  Basavaraj Jayawant PATTAN

IPC: H04W8/22 ,  H04L47/36 ,  H04W60/04

Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. According to an embodiment, a method performed by a first user equipment (UE) which is a constrained UE in a wireless communication system is provided. The method comprises transmitting, to a plurality of UEs, a first message for requesting a relay configuration for the first UE, receiving, from at least one UE with a relay capability among the plurality of UEs, a second message as a response to the first message, the second message comprising information on the relay configuration, and identifying a second UE for a relay service among the at least one UE with the relay capability based on the information on a maximum allowed packet size of the second UE.

公开(公告)号：US20250142312A1

公开(公告)日：2025-05-01

申请号：US19010726

申请日：2025-01-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mahmoud WATFA ,  Lalith Kumar

IPC: H04W4/90 ,  H04W4/12 ,  H04W60/04 ,  H04W84/04

Abstract: A method and an apparatus are provided for controlling access to a network supporting disaster roaming. The network receives a non-access stratum (NAS) message from a user equipment (UE). The network verifies at least one condition in response to the NAS message. Based on the at least one condition, the network accepts the NAS message and indicates that the UE is registered for emergency services.

公开(公告)号：US20250142086A1

公开(公告)日：2025-05-01

申请号：US19007276

申请日：2024-12-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-soo JEONG ,  Minwoo Park

IPC: H04N19/159 ,  H04N19/105 ,  H04N19/176 ,  H04N19/184 ,  H04N19/513

Abstract: A video decoding method includes determining whether an ultimate motion vector expression (UMVE) mode is allowed for an upper data unit including a current block, when the UMVE mode is allowed for the upper data unit, determining whether the UMVE mode is applied to the current block, when the UMVE mode is applied to the current block, determining a base motion vector of the current block, determining a correction distance and a correction direction for correction of the base motion vector, determining a motion vector of the current block by correcting the base motion vector according to the correction distance and the correction direction, and reconstructing the current block based on the motion vector of the current block.