公开(公告)号：US20240021679A1

公开(公告)日：2024-01-18

申请号：US18350433

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Junyoung KWON ,  Keunwook SHIN ,  Minseok YOO

IPC: H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L29/78 ,  H01L29/775

CPC classification number: H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L29/7853 ,  H01L29/775 ,  H01L29/04

Abstract: A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.

公开(公告)号：US20230036321A1

公开(公告)日：2023-02-02

申请号：US17831950

申请日：2022-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Junyoung KWON ,  Minseok YOO

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/417 ,  H01L21/8238

Abstract: Provided are a layer structure including a configuration capable of increasing the operation characteristics of a device including the layer structure, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure includes a first layer and a second layer on one surface of the first layer and facing the first layer. The first layer and the second layer overlap each other. One layer of the first layer and the second layer has a trace of applied strain, and an other layer of the first layer and the second layer is a strain-inducing layer that applies a strain to the one layer.

公开(公告)号：US20240030294A1

公开(公告)日：2024-01-25

申请号：US18321275

申请日：2023-05-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Junyoung KWON ,  Jitak NAM ,  Minseok Yoo

IPC: H01L29/18 ,  H01L29/16 ,  H01L29/417 ,  H01L21/02

CPC classification number: H01L29/18 ,  H01L29/1606 ,  H01L29/41725 ,  H01L21/02568 ,  H01L21/02485

Abstract: A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.

公开(公告)号：US20230275128A1

公开(公告)日：2023-08-31

申请号：US18154978

申请日：2023-01-16

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Junyoung KWON ,  Sangwoo KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Minseok SHIN ,  Pin ZHAO ,  Taehyeong KIM ,  Jaehwan JUNG

IPC: H01L29/18 ,  H01L29/66

CPC classification number: H01L29/18 ,  H01L29/66969

Abstract: A semiconductor device including a two-dimensional material and a method of manufacturing the same are provided. The semiconductor device may include a first two-dimensional material layer including a first two-dimensional semiconductor material; a plurality of second two-dimensional material layers connected to the first two-dimensional material layer, each having a thickness greater than that of the first two-dimensional material layer, and including a doped two-dimensional semiconductor material; and a plurality of electrodes on the plurality of second two-dimensional material layers.

公开(公告)号：US20240304699A1

公开(公告)日：2024-09-12

申请号：US18591799

申请日：2024-02-29

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Junyoung KWON ,  Gwanhyung LEE ,  Heeje RYU

IPC: H01L29/49 ,  H01L29/04 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/4908 ,  H01L29/408 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78648

Abstract: A semiconductor device includes a semiconductor layer including a two-dimensional semiconductor material, a source electrode and a drain electrode electrically connected to respective edge regions on the semiconductor layer, an insulating layer arranged on the semiconductor layer, and a gate electrode arranged on the insulating layer, wherein the insulating layer may include a single-crystal layer.

公开(公告)号：US20240170562A1

公开(公告)日：2024-05-23

申请号：US18366366

申请日：2023-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Kyung-Eun BYUN ,  Changseok LEE ,  Minseok YOO

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a first two-dimensional (2D) material layer, a second 2D material layer, a first electrode, a second electrode, a third electrode, a first gate electrode. and a second gate electrode. A Fermi-level may be pinned on an interfacial surface between the first 2D material layer and the first electrode. The Fermi-level may be depinned on an interfacial surface between the second 2D material layer and the first electrode.

公开(公告)号：US20230112883A1

公开(公告)日：2023-04-13

申请号：US17690376

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Keunwook SHIN ,  Junyoung KWON ,  Minseok YOO ,  Changseok LEE

IPC: H01L29/76 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Provided are a two-dimensional material structure, a semiconductor device including the two-dimensional material structure, and a method of manufacturing the semiconductor device. The two-dimensional material structure may include a first insulator including a first dielectric material; a second insulator on the first insulator and including a second dielectric material; a first two-dimensional material film on an exposed surface of the first insulator; and a second two-dimensional material film provided on an exposed surface of the second insulator. The first and second two-dimensional material films may include a two-dimensional material having a two-dimensional layered structure, and the second two-dimensional material film may include more layers of the two-dimensional material than the first two-dimensional material film.

公开(公告)号：US20230061267A1

公开(公告)日：2023-03-02

申请号：US17673239

申请日：2022-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40

Abstract: An electronic device including a two-dimensional material is provided. The electronic device may include a substrate; a metal layer on a partial region of the substrate; a two-dimensional material layer over the metal layer and an upper surface of the substrate; and an insertion layer between the metal layer and the two-dimensional material layer.

公开(公告)号：US20220406911A1

公开(公告)日：2022-12-22

申请号：US17545373

申请日：2021-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minseok YOO ,  Minsu SEOL ,  Junyoung KWON ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Van Luan NGUYEN

IPC: H01L29/423 ,  H01L29/43

Abstract: Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.

公开(公告)号：US20240186183A1

公开(公告)日：2024-06-06

申请号：US18441520

申请日：2024-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Minhyun LEE ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/66 ,  H01L29/76 ,  H01L29/786

CPC classification number: H01L21/823412 ,  H01L21/02521 ,  H01L21/02527 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/823431 ,  H01L29/0665 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/42392 ,  H01L29/66045 ,  H01L29/66969 ,  H01L29/7606 ,  H01L29/78696

Abstract: Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.