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221.发明申请METHOD FOR MEASURING THE PROPERTIES OF LIQUID BASED ON A QUARTZ CRYSTAL MICROBALANCE SENSOR 审中-公开用于测量基于晶体晶体微结构传感器的液体性质的方法公开(公告)号：US20160097743A1
公开(公告)日：2016-04-07
申请号：US14933648
申请日：2015-11-05
Inventor： Feng TAN , Duyu QIU , Peng YE , Hao ZENG , Yong ZHAO , Jun JIANG , Huiqing PAN , Lianping GUO , Shuhao WU
IPC: G01N29/02
CPC classification number: G01N29/022 , G01N29/036 , G01N29/4436 , G01N2291/014 , G01N2291/02818 , G01N2291/0426
Abstract: The present invention provides a method for a method for measuring the properties of liquid based on a quartz crystal microbalance sensor, which employs two measurements to obtain two frequency shifts of the QCM sensor induced by two different volume of the sample liquid. The present invention creatively established the relationship between the density and viscosity of sample liquid and the frequency shifts of QCM sensor. With present invention, the density and viscosity of sample liquid can be obtained through two frequency shifts. Comparing to the conventional liquid property measurement. The measuring procedure of present invention are more simple, and the measuring results are more accurate. Moreover, the present invention consumes less volume of sample liquid, and has the features such as online, real time and quantitative.
Abstract translation: 本发明提供了一种用于测量基于石英晶体微量天平传感器的液体性质的方法，该方法采用两次测量来获得由两个不同体积的样品液体引起的QCM传感器的两个频移。 本发明创造性地建立了样品液体的密度和粘度与QCM传感器的频移之间的关系。 通过本发明，可以通过两次频移获得样品液体的密度和粘度。 与传统的液体性能测量相比。 本发明的测量方法更简单，测量结果更准确。 此外，本发明消耗较少的样品液体量，具有在线，实时和定量等特征。
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222.发明申请公开(公告)号：US20160032443A1
公开(公告)日：2016-02-04
申请号：US14880148
申请日：2015-10-09
Inventor： Deen Gu , Tao Wang , Yadong Jiang
CPC classification number: C23C14/083 , C01G31/02 , C23C14/0036 , C23C14/3464 , C23C14/35 , C23C14/352 , C23C14/58 , C23C14/5853 , H01B1/02
Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.
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公开(公告)号：US20150357823A1
公开(公告)日：2015-12-10
申请号：US14655520
申请日：2013-12-27
Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA , SICHUAN SUNFOR LIGHT CO., LTD.
Inventor： NING NING , Yongming JIA , Wenbin CHEN , Chunyi FENG , Dongming LI , Mian YANG , Zhengyong FENG , Wentao LONG
IPC: H02J4/00
CPC classification number: H02J4/00 , H05B33/0812 , H05B33/083 , Y02B20/343 , Y02B20/345 , Y10T307/43
Abstract: The present disclosure discloses a multipath current source switching device, including a switching control unit, N current paths, and N loads. Each current path is formed by a constant current source circuit and a switching circuit. One terminal of a first load is coupled to a load power supply, and the other terminal of the first load is coupled to an output terminal of a constant current source circuit of a first current path and one terminal of a second load; one terminal of an ith load is coupled to the other terminal of an (i−1)th load and an output terminal of a constant current source circuit of an ith current path; and the switching control unit controls an output current of a corresponding constant current source circuit through a corresponding switching circuit. When the circuits are switched, an output voltage of a switching circuit of a current path to be switched off is decreased to zero according to a preset voltage variation quantity, and an output voltage of a switching circuit of a current path to be switched on is increased to a highest operating voltage according to the preset voltage variation quantity, such that a current on a load does not exceed a preset current and is not zero during switching. N is an integer not less than 2, and i is equal to 2, 3, 4, . . . , N.
Abstract translation: 本公开公开了一种多路电流源切换装置，包括开关控制单元，N个电流路径和N个负载。 每个电流路径由恒定电流源电路和开关电路形成。 第一负载的一个端子耦合到负载电源，并且第一负载的另一个端子耦合到第一电流路径和第二负载的一个端子的恒定电流源电路的输出端子; 第i个负载的一个端子耦合到第（i-1）个负载的另一个端子和第i个电流路径的恒定电流源电路的输出端子; 并且开关控制单元通过相应的开关电路来控制对应的恒流源电路的输出电流。 当电路切换时，根据预设的电压变化量将要关断的电流通路的开关电路的输出电压减小到零，并且要接通的电流通路的开关电路的输出电压为 根据预设电压变化量增加到最高工作电压，使得负载上的电流不超过预设电流，并且在切换期间不为零。 N是不小于2的整数，i等于2,3,4。 。 。 ，N.
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224.发明授权Asymmetric waveform pulse generator and FAIMS ion detector employing same 有权非对称波形脉冲发生器和FAIMS离子检测器采用相同的公开(公告)号：US09207208B2
公开(公告)日：2015-12-08
申请号：US14473793
申请日：2014-08-29
Inventor： Qishui Zhong , Hui Li , Dajin Chen , Baihua Li
IPC: H03K17/10 , G01N27/62 , H03K17/691
CPC classification number: G01N27/624 , H03K7/08 , H03K17/102 , H03K17/691
Abstract: An asymmetric waveform pulse generator comprises a metallic oxide semiconductor field effect transistor (MOSFET) bridge circuit, which includes a plurality of MOSFETs for inverting high voltage DC voltage to asymmetric waveform pulses. The asymmetric waveform pulse generator further comprises a pulse-width modulating (PWM) circuit for generating PWM signals, and a plurality of isolation driving circuits corresponding to the plurality of MOSFETs, for controlling switching on/off of the plurality of MOSFETs in the MOSFET bridge circuit based on the PWM signals generated by the PWM circuit. Each of the isolation driving circuits comprises an isolation transformer for isolating the MOSFET bridge circuit from the PWM circuit. A FAIMS ion detector employing the asymmetric waveform pulse generator is also disclosed.
Abstract translation: 非对称波形脉冲发生器包括金属氧化物半导体场效应晶体管（MOSFET）桥接电路，其包括用于将高压DC电压转换为非对称波形脉冲的多个MOSFET。 非对称波形脉冲发生器还包括用于产生PWM信号的脉冲宽度调制（PWM）电路和对应于多个MOSFET的多个隔离驱动电路，用于控制MOSFET桥中的多个MOSFET的导通/截止 基于由PWM电路产生的PWM信号的电路。 每个隔离驱动电路包括用于将MOSFET桥接电路与PWM电路隔离的隔离变压器。 还公开了采用非对称波形脉冲发生器的FAIMS离子检测器。
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公开(公告)号：US20150188560A1
公开(公告)日：2015-07-02
申请号：US14584599
申请日：2014-12-29
Inventor： Wuhuang HUANG , Kuojun YANG , Houjun WANG , Jun JIANG , Hao ZENG , Duyu QIU , Peng YE , Qinchuan ZHANG , Shulin TIAN
IPC: H03M1/12
CPC classification number: H03M1/128 , G06F3/038 , G06F3/044 , G06T17/20 , H03M1/00 , H03M1/12 , H03M1/1285
Abstract: For the signal under acquisition which varies monotonically before and after the trigger time, a method for full-digital random sampling employs first sampled data before the trigger time and first sampled data after the trigger time to fit a curve, and obtains an intersection point of triggering level and the fitted curve, then, calculates the time interval between sampled data after the trigger time and the intersection point in the end, reconstructs the original signal, i.e. the signal under acquisition by a time interval of each acquisition. Thus, an analog trigger circuit and a time measurement circuit of conventional random sampling system can be eliminated, that simplifies the circuit design of data acquisition system and decreases its hardware complexity. Moreover, the higher sampling rate for the signal under acquisition is attained, and more waveform details are obtained.
Abstract translation: 对于在触发时间之前和之后单调变化的信号，全数字随机采样的方法在触发时间之前采用第一采样数据，并在触发时间之后采用第一采样数据以拟合曲线，并获得 触发电平和拟合曲线，然后计算触发时间之后的采样数据与最终交点之间的时间间隔，重建原始信号，即每次采集时间间隔内的采集信号。 因此，可以消除常规随机采样系统的模拟触发电路和时间测量电路，简化了数据采集系统的电路设计，降低了硬件复杂度。 此外，获得获取信号的较高采样率，并获得更多的波形细节。
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Patent Agency Ranking
公开(公告)号：US08972812B2
公开(公告)日：2015-03-03
申请号：US13929758
申请日：2013-06-27
Inventor： Yajuan He , Tingting Xia , Tao Luo , Wubing Gan , Bo Zhang
CPC classification number: G01R31/317 , G06F1/3243 , G06F1/3296 , G06F9/3869 , Y02D10/152 , Y02D10/172
Abstract: A pipelined processor including a combinational logic of several stages, a voltage regulator, a counter, a comparator, and a plurality of stage registers. Each stage register is disposed between two adjacent stages of the combinational logic. The stage register includes a flip-flop, a latch, an XOR gate, and a MUX module. When the high level of a register clock is coming, the flip-flop latches first data at the rising edge, and the latch receives second data during the high level. The data latched by the flip-flop and the latch respectively are compared by the XOR gate. If they are same, the output Error of the XOR gate is low level, and the output of the flip-flop is delivered to the next stage. Otherwise, the output Error of the XOR gate is high level, and the output of the latch is delivered to the next stage.
Abstract translation: 一种流水线处理器，包括几级的组合逻辑，电压调节器，计数器，比较器和多个级寄存器。 每个级寄存器被布置在组合逻辑的两个相邻级之间。 级寄存器包括触发器，锁存器，异或门和MUX模块。 当寄存器时钟的高电平到来时，触发器在上升沿锁存第一数据，并且锁存器在高电平期间接收第二数据。 由触发器和锁存器锁存的数据分别由XOR门进行比较。 如果它们相同，则XOR门的输出误差为低电平，触发器的输出被传送到下一级。 否则，异或门的输出误差为高电平，并将锁存器的输出传送到下一级。
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公开(公告)号：US20250102484A1
公开(公告)日：2025-03-27
申请号：US18969096
申请日：2024-12-04
Inventor： Zhen Yuan , Huiling Tai , Yadong Jiang , Ruilin Yang , Tiancheng Huang , Chen Shan
IPC: G01N33/00
Abstract: An integrated structure of an ultrafast response hydrogen sensor includes: a gas path chamber; a gas extractor fixed to a gas inlet of the gas path chamber; and a first hydrogen sensor and a second hydrogen sensor provided inside the gas path chamber; wherein the gas extractor is located in an identical straight line with the first hydrogen sensor and the second hydrogen sensor; the first hydrogen sensor and the second hydrogen sensor each have an Port A and a Port B, and DC voltage is applied to the Port A of the first hydrogen sensor and the Port B of the second hydrogen sensor, and the Port B of the first hydrogen sensor is connected to the Port A of the second hydrogen sensor to form a shared port, and the shared port serves as a voltage output port.
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公开(公告)号：US20250091895A1
公开(公告)日：2025-03-20
申请号：US18487608
申请日：2023-10-16
Applicant: YANGTZE DELTA REGION INSTITUTE (HUZHOU), UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
Inventor： Zhaojun QIN , Weiwu CHEN
Abstract: Provided herein is a method for preparing indium oxide nanorods, comprising the following steps: S1: placing indium oxide powder at a central temperature control area of a tube furnace, and then placing a cleaned silicon wafer downstream from the indium oxide powder; S2: evacuating inside the tube furnace, and then continuing to introduce argon gas; and S3: adjusting a program to heat up the central temperature control area of the tube furnace and maintaining it at a temperature, and then naturally cooling to obtain a indium oxide nanorods grown on the surface of the silicon wafer.
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229.发明申请公开(公告)号：US20250037363A1
公开(公告)日：2025-01-30
申请号：US18386087
申请日：2023-11-01
Applicant: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China
Inventor： Lu Gan , Rongjiang Tang
Abstract: The present disclosure discloses a three-dimensional inversion method of airborne transient electromagnetics based on deep learning. The method of the present disclosure proposes two strategies that focus on training datasets, to improve the performance of deep learning models, including divide and conquer strategy and random models generating. Through a large of reasonable structural models, appropriate network setups, a more generalized result can be obtained through our proposed U-Net framework, which has been demonstrated to be effective on both synthetic and field data. This scheme can realize the rapid prospecting of three-dimensional resistivity structure in large-area target region, and solve the problem of low efficiency of traditional three-dimensional inversion calculation of ATEM and poor migration ability of three-dimensional inversion based on deep learning developed by predecessors.
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230.发明授权公开(公告)号：US12212357B2
公开(公告)日：2025-01-28
申请号：US17873134
申请日：2022-07-25
Inventor： Bo Zhang , Zhongqian Niu , Xiaobo Yang , Bingli Dai , Yi Hu , Jicong Zhang , Yong Fan , Ke Liu , Zhi Chen
Abstract: The present disclosure provides a GaAs monolithic integrated terahertz low-noise communication system transceiver front-end, including an intermediate frequency circuit and a terahertz circuit. The terahertz circuit includes a local oscillator frequency tripler, a local oscillator unidirectional 3 dB filter coupler, a radio frequency 180° filter coupler, and two terahertz GaAs monolithic integrated subharmonic mixers. The local oscillator unidirectional 3 dB filter coupler and the radio frequency 180° filter coupler each include one ring-cylindrical resonant cavity and four rectangular waveguides. The ring-cylindrical resonant cavity is divided into four rectangular waveguides which are correspondingly connected to the four sector-annular resonant cavities, respectively. The present disclosure suppresses the local oscillator noise by adopting a local oscillator unidirectional 3 dB filter coupler and a radio frequency 180° filter coupler with both coupling and filtering functions, thereby achieving a low local oscillator noise transceiver front-end.
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