Abstract:
Disclosed are a liquid crystal display device 10 and a method of making such liquid crystal display device that improves display quality by providing heat dissipation pattern 4 for effectively dissipating heat generated by the driver ICs 2. The heat dissipation pattern 4 is formed on a glass substrate of a liquid crystal panel 1 along one side thereof so as to minimize non-uniform thermal distribution on the liquid crystal panel 1 at locations adjacent to and distant from the driver ICs 2.
Abstract:
A connecting structure of the present invention includes a first substrate, a second substrate on which the first substrate is laminated, and a sheet like connection body having one end connected to one principal surface of the first substrate and another end connected to one principal surface of the second substrate, wherein a lengthwise direction of the sheet like connection body is parallel to a perimeter part of the first substrate, and the sheet like connection body has a slit part extending from one of end portions thereof to a part thereof along the lengthwise direction, and has a first end and a second end divided by the slit part at one of end portions, the first end is connected to a principal surface of the first substrate in vicinity of a peripheral part of the first substrate, and the second end is connected to a principal surface of the second substrate in vicinity of a peripheral part of the first substrate.
Abstract:
A light-receiving circuit is provided which is capable of reducing component counts, improving light-receiving accuracy and increasing a dynamic range of an amount of received light. The light-receiving circuit includes a photodiode made of thin films formed on an insulating substrate, a transferring TFT (Thin Film Transistor) to transfer charges induced by the photodiode according to input light, a charge accumulating capacitor to accumulate transferred charges, and a reading TFT to transfer charges accumulated in the charge accumulating capacitor to a charge reading signal line.
Abstract:
A method for manufacturing a transflective type LCD having a first substrate provided thereon with a plurality of scanning lines and a plurality of signal lines which are substantially perpendicular to each other and a switching element arranged near each of intersections between said scanning lines and said signal lines, includes forming a reflection region having a reflection electrode film and a transmission region having a transparent electrode film in each pixel surrounded by said scanning lines and said signal lines, a liquid crystal being sandwiched at a gap between said first substrate and a second substrate which is arranged opposite to said first substrate, and forming an organic film having irregularities thereon below said reflection electrode film and said transparent electrode film to substantially the same film thickness.
Abstract:
In an image display device including: an electrophoretic display element having a memory property and a display/update controlling unit which outputs the first control signal and the data signal to the data line driving circuit, and the second control signal to the scanning line driving circuit, based on given image data, during the image updating period of time, and cuts off power supply to the data line driving circuit and the scanning line driving circuit, during an image holding period of time, the display/update controlling unit, during the image updating period of time, inputs sequentially a plurality of pieces of compressed image block data having a data configuration which one screen of the image data is divided into a plurality of blocks, and compressed for each block, expands the compressed image block data of a preceding screen and the compressed image block data of a corresponding updating screen sequentially inputted, and outputs the data signal for screen update to the data line driving circuit, based on the expanded image block data of the preceding screen and the expanded image block data of the corresponding updating screen.
Abstract:
A method for forming an organic mask, includes:permeating an organic solvent into an organic pattern formed on a base film and containing at least one kind of organic material, by contacting the organic pattern with the organic solvent; and thereby, partially or entirely decreasing original adhesion strength between the base film and the organic pattern. A heat treatment may be conducted after contacting to adjust the adhesion strength. Using the organic pattern as a mask, isotropic etching is conducted. As a result, a desired taper angle of the etched base film can be achieved with high accuracy. The taper angle of the etched base film is adjustable by controlling the adhesion strength through the heat treatment.
Abstract:
In a liquid crystal display device, a liquid crystal layer is provided between a principal substrate and an opposing substrate that are disposed so as to face each other, and a shared electrode and a pixel electrode, which is a parallel electrode pair formed in the shape of a comb, are formed on the surface of the principal substrate that faces the opposing substrate. Orientation films are also formed on the opposing surfaces of the principal substrate and the opposing substrate. The electrodes of the parallel electrode pair are formed so that the width thereof is smaller than the thickness of the liquid crystal layer. The orientation of the liquid crystal molecules between the electrodes is thereby changed by an electric field generated by the parallel electrode pair, and the orientation of liquid crystal molecules disposed above the electrodes is changed in the same direction as in the liquid crystal molecules between the electrodes in accordance with the change in orientation of the liquid crystal molecules between the electrodes. A high degree of transmittance can thereby be achieved by a simple electrode structure in an in-plane switching liquid crystal display device.
Abstract:
Within a reflective display section R, a part of a light that reaches a reflective electrode through a color filter exits to the outside through slits and a part of a light that reaches the reflective electrode through the slits exits to the outside through the color filter. In addition, a light reaching the reflective electrode through the color filter and exiting to the outside through the color filter, and a light having no opportunity to pass through the slits also can be observed. Therefore, a mean film thickness of color filter through which all lights pass during the time in which they travel the associated distance after they are inputted to the inside until they are outputted to the outside becomes nearly equal to that could be observed in the transmissive section T.
Abstract translation:在反射显示部分R内,通过滤色器到达反射电极的光的一部分通过狭缝离开到外部,并且通过狭缝到达反射电极的一部分光通过滤色器离开到外部。 此外,通过滤色器到达反射电极的光并且通过滤色器离开外部,并且可以观察到没有通过狭缝的机会的光。 因此,所有光通过的滤色片的平均膜厚在输入到内部之后行进相关距离的时间内通过,直到它们被输出到外部变得几乎等于在透射部分 T.
Abstract:
A semiconductor device in which a semiconductor layer is formed on an insulating substrate with a front-end insulating layer interposed between the semiconductor layer and the insulating substrate is provided which is capable of preventing action of an impurity contained in the insulating substrate on the semiconductor layer and of improving reliability of the semiconductor device. In a TFT (Thin Film Transistor), boron is made to be contained in a region located about 100 nm or less apart from a surface of the insulating substrate so that boron concentration decreases at an average rate being about 1/1000-fold per 1 nm from the surface of the insulating substrate toward the semiconductor layer.
Abstract:
An in-plane-switching-mode (IPS) LCD device includes a TFT substrate and a CF substrate sandwiching therebetween an LC layer, and a pair of polarizing films sandwiching therebetween the substrates and the LC layer. Each polarizing film has a polarization layer and a protective layer. An optical compensation layer having a birefringence is disposed between the light-emitting-side polarizing film and the CF substrate. The optical compensation layer has an in-plane retardation of N1 satisfying the following relationship: 83.050−0.8101×D1≦N1≦228.09−0.74D1 in the range of 0