公开(公告)号：US07863359B2

公开(公告)日：2011-01-04

申请号：US11301190

申请日：2005-12-12

Applicant: Seeun Lee ,  Chang Hun Han ,  Daewoo Lee

Inventor： Seeun Lee ,  Chang Hun Han ,  Daewoo Lee

IPC: C07F9/09

CPC classification number: C08F220/14 ,  C08F2/02

Abstract: Provided are a method of preparing a transparent copolymer resin by continuous bulk polymerization of a polymerization mixture obtained by adding a phenol-based antioxidant and/or a phosphate-based antioxidant, a chain transfer agent, and an organic peroxide initiator to a monomer mixture including a styrene monomer, an acrylate monomer, and an acrylonitrile monomer, and a transparent copolymer resin prepared by the method, having good chemical resistance, fluidity, and discoloration resistance.

Abstract translation: 提供了通过将苯酚类抗氧化剂和/或磷酸酯类抗氧化剂，链转移剂和有机过氧化物引发剂添加到单体混合物中而获得的聚合混合物的连续本体聚合制备透明共聚物树脂的方法，所述单体混合物包括 苯乙烯单体，丙烯酸酯单体和丙烯腈单体，以及通过该方法制备的具有良好的耐化学性，流动性和耐变色性的透明共聚物树脂。

公开(公告)号：US07859072B2

公开(公告)日：2010-12-28

申请号：US11839236

申请日：2007-08-15

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00 ,  H01L31/0216

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14623

Abstract: An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.

Abstract translation: 提供了图像传感器及其制造方法。 图像传感器包括设置在有源区域中的多个像素和设置在周边区域中的虚拟像素。 层间绝缘层在有源区具有第一厚度，在周边区具有比第一厚度薄的第二厚度。 彩色滤光片设置在有源区域中，并且遮光构件设置在周边区域中。 滤色器和遮光构件之间基本上没有差别。

公开(公告)号：US07738714B2

公开(公告)日：2010-06-15

申请号：US11516603

申请日：2006-09-07

Applicant: Yung-lyul Lee ,  Dae-yeon Kim ,  Ki-hun Han ,  Jae-ho Hur

Inventor： Yung-lyul Lee ,  Dae-yeon Kim ,  Ki-hun Han ,  Jae-ho Hur

IPC: G06K9/36

CPC classification number: H04N19/12 ,  H04N19/147 ,  H04N19/176 ,  H04N19/593 ,  H04N19/61

Abstract: Provided are a method of and apparatus for lossless video encoding and decoding, in which a differential residual block generated by calculating a difference between pixels of a residual block resulting from interprediction is encoded, thereby improving the compression rate. The method of lossless video encoding includes performing interprediction between a reference frame and a current frame in units of a predetermined-size block to generate a predicted block of a current block to be encoded, generating a residual block composed of residual signals corresponding to differences between pixels of the predicted block and the current block, calculating differences between the residual signals of the residual block in a predetermined direction and generating a differential residual block based on the calculated differences, and performing entropy-encoding on the differential residual block.

Abstract translation: 提供了一种用于无损视频编码和解码的方法和装置，其中通过计算由间隔预测产生的残差块的像素之间的差异而产生的差分残差块被编码，从而提高了压缩率。 无损视频编码的方法包括以预定大小的块为单位执行参考帧和当前帧之间的间隔预测，以产生要编码的当前块的预测块，产生由对应于 计算预测块和当前块的像素，计算在预定方向上的残差块的残差信号之间的差异，并基于计算的差产生差分残差块，并对差分残差块进行熵编码。

公开(公告)号：US20100090095A1

公开(公告)日：2010-04-15

申请号：US12576489

申请日：2009-10-09

Applicant: Chang-Hun Han

Inventor： Chang-Hun Han

IPC: H01L31/02 ,  H01L21/768

CPC classification number: H01L27/14636 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14687

Abstract: An image sensor and a method of manufacturing an image sensor. An image sensor may include a readout circuitry having a metal line on and/or over a first substrate. An image sensor may include an image sensing part having a first conductive-type conductive layer and/or a second conductive-type conductive layer over a metal line. An image sensor may include a pixel division area formed on and/or over an image sensing part corresponding to a pixel boundary. An image sensor may include a ground contact on and/or over a pixel division area. An image sensor may include a contact plug connected with a sidewall of an image sensing part. A method of manufacturing an image sensor is disclosed.

Abstract translation: 图像传感器和图像传感器的制造方法。 图像传感器可以包括在第一基板上和/或上方具有金属线的读出电路。 图像传感器可以包括在金属线上具有第一导电型导电层和/或第二导电型导电层的图像感测部件。 图像传感器可以包括形成在对应于像素边界的图像感测部分上和/或上方的像素分割区域。 图像传感器可以包括在像素分割区域上和/或上方的像素分割区域上的接地接触。 图像传感器可以包括与图像感测部件的侧壁连接的接触插塞。 公开了一种制造图像传感器的方法。

公开(公告)号：US07695870B2

公开(公告)日：2010-04-13

申请号：US12158936

申请日：2008-03-06

Applicant: Jong-Hyeok Park ,  Sang-Young Lee ,  Jang-Hyuk Hong ,  Moon-Ja Nam ,  Jung-A Yoo ,  Sang-Seop Kim ,  Chang-Hun Han

Inventor： Jong-Hyeok Park ,  Sang-Young Lee ,  Jang-Hyuk Hong ,  Moon-Ja Nam ,  Jung-A Yoo ,  Sang-Seop Kim ,  Chang-Hun Han

IPC: H01M2/16 ,  H01M2/18 ,  H01M10/04 ,  H01M4/48 ,  B05D5/12 ,  B05C5/00

CPC classification number: H01M2/166 ,  H01M2/16 ,  H01M2/1686 ,  H01M10/052

Abstract: An organic/inorganic composite separator includes a porous substrate having a plurality of pores; and a porous coating layer formed on at least one surface of the porous substrate with a plurality of inorganic particles and a binder polymer. The binder polymer is a copolymer including: (a) a first monomer unit having a contact angle to a water drop in the range from 0° to 49°; and (b) a second monomer unit having a contact angle to a water drop in the range from 50° to 130°. This organic/inorganic composite separator has excellent thermal stability, so it may restrain an electric short circuit between a cathode and an anode. In addition, the separator may prevent inorganic particles in the porous coating layer from being extracted during an assembling process of an electrochemical device, thereby improving stability of an electrochemical device.

Abstract translation: 有机/无机复合隔膜包括具有多个孔的多孔基材; 以及在多孔基材的至少一个表面上形成有多个无机颗粒和粘合剂聚合物的多孔涂层。 粘合剂聚合物是共聚物，其包含：（a）与0〜49°的水滴接触角的第一单体单元; 和（b）第二单体单元，其具有与水滴在50°至130°范围内的接触角。 该有机/无机复合隔膜具有优异的热稳定性，因此可以抑制阴极与阳极之间的电短路。 此外，隔膜可以防止多孔涂层中的无机颗粒在电化学装置的组装过程中被提取，从而提高电化学装置的稳定性。

公开(公告)号：US07679183B2

公开(公告)日：2010-03-16

申请号：US12001679

申请日：2007-12-11

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L23/34

CPC classification number: H01L23/38 ,  H01L27/14618 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an electronic cooling device and a fabrication method thereof. The method may include forming an insulating layer on a semiconductor substrate, forming first and second silicide layers on the insulating layer, forming separate paired p-type and n-type semiconductors on each of the first and second silicide layers, forming a first interlayer dielectric (ILD) layer on the p-type and n-type semiconductors, exposing top surfaces of the n-type and p-type semiconductors, forming a third silicide layer on one semiconductor on each of the first and second silicide layers, forming a second ILD layer on the third silicide layer, and etching the second and first ILD layers to form contact holes exposing top surfaces of the first and second silicide layers.

Abstract translation: 提供一种电子冷却装置及其制造方法。 该方法可以包括在半导体衬底上形成绝缘层，在绝缘层上形成第一和第二硅化物层，在第一和第二硅化物层的每一个上形成单独的成对p型和n型半导体，形成第一层间电介质 （ILD）层，暴露n型和p型半导体的顶表面，在第一和第二硅化物层中的每一个上的一个半导体上形成第三硅化物层，形成第二硅化物层 ILD层，并且蚀刻第二和第一ILD层以形成暴露第一和第二硅化物层的顶表面的接触孔。

公开(公告)号：US07675100B2

公开(公告)日：2010-03-09

申请号：US12012937

申请日：2008-02-05

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14603 ,  H01L27/1463 ,  H01L27/14689

Abstract: CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.

Abstract translation: CMOS图像传感器及其制造方法，CMOS图像传感器包括具有限定在其中的有源区和器件隔离区的第二导电型半导体衬底，其中有源区具有限定在其中的光电二极管区和晶体管区， 在器件隔离区域的半导体衬底中的隔离膜，在光电二极管区域的半导体衬底中的第一导电类型杂质区域，与器件隔离膜间隔一定距离的第一导电类型杂质区域和第二导电类型第一杂质 在第一导电型杂质区域和器件隔离膜之间的半导体衬底中的区域，从而减少在光电二极管区域和场区域之间的界面处的产生暗电流。

公开(公告)号：US07667749B2

公开(公告)日：2010-02-23

申请号：US11020525

申请日：2004-12-27

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H04N3/14 ,  H01L31/062 ,  H04N5/225

CPC classification number: H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14645 ,  H01L27/14685 ,  H04N2209/045

Abstract: An image sensor and a method for fabricating the same are disclosed, in which a partial light-shielding layer is additionally arranged on a path of a particular colored light, for example, a red colored light that may cause excessive permeation, to partially shield the corresponding red colored light in a state that red colored light, green colored light and blue colored light are permeated into each photodiode of a semiconductor substrate, so that the permeation position of the red colored light coincides with that of the green colored light and the blue colored light each having the wavelength shorter than that of the red colored light, thereby normally generating optical charges caused by the red colored light in an effective depletion area of the photodiode like those caused by the green colored light and the blue colored light. The permeation position of a red colored light, a green colored light and a blue colored light coincides with one another within a depletion area of a semiconductor substrate to obtain an optimal effective ratio from respective optical charges and the uniform quantity of the respective optical charges can be transferred/discharged to an interpolation circuit by signal processing transistors, thereby effectively displaying color images having excellent display quality (in color and resolution) approximate to a ratio of 1:1:1 with red, green and blue.

Abstract translation: 公开了一种图像传感器及其制造方法，其中部分遮光层另外布置在特定有色光的路径上，例如可能引起过度渗透的红色光，以部分屏蔽层 在红色的光，绿色的光和蓝色的光的状态下，相应的红色的光被透过到半导体衬底的每个光电二极管中，使得红色的光的透过位置与绿色的光和蓝色的一致 每一个都具有比红色光的波长短的彩色光，从而通常产生由光电二极管的有效耗尽区域中的红色光引起的光电荷，如由绿色光和蓝色光引起的那样。 红色光，绿色光和蓝色光的透过位置在半导体衬底的耗尽区域内彼此重合，从各光电荷获得最佳有效比，并且各个光电荷的均匀量可以 通过信号处理晶体管传输/放电到内插电路，从而以红色，绿色和蓝色有效地显示具有优良的显示质量（颜色和分辨率）的比例为1：1：1的彩色图像。

公开(公告)号：US20090224298A1

公开(公告)日：2009-09-10

申请号：US12437373

申请日：2009-05-07

Applicant: Chang Hun HAN

Inventor： Chang Hun HAN

IPC: H01L31/10

CPC classification number: H01L27/14683 ,  H01L27/14603

Abstract: Disclosed are a CMOS image sensor and a manufacturing method thereof. The method includes the steps of: forming an isolation layer on a semiconductor substrate, defining an active region that includes a photo diode region and a transistor region; forming a gate in the transistor region, the gate including a gate electrode and a gate insulating layer; forming a first low-concentration diffusion region in the photo diode region; forming a second low-concentration diffusion region in the transistor region; forming a buffer layer over the substrate, the buffer layer covering the photo diode region; forming first and second insulating layers over the entire surface of the substrate, the first and second insulating layer having a different etching selectivity from each other; forming an insulating sidewall on sides of the gate electrode by selective removal of the second insulating layer; removing the first insulating layer from the transistor region; forming a high-concentration diffusion region in the exposed transistor region, partially overlapping the second low-concentration diffusion region; and forming a metal silicide layer on the high-concentration diffusion region.

Abstract translation: 公开了CMOS图像传感器及其制造方法。 该方法包括以下步骤：在半导体衬底上形成隔离层，限定包括光电二极管区域和晶体管区域的有源区域; 在所述晶体管区域中形成栅极，所述栅极包括栅极电极和栅极绝缘层; 在所述光电二极管区域中形成第一低浓度扩散区域; 在所述晶体管区域中形成第二低浓度扩散区域; 在所述衬底上形成缓冲层，所述缓冲层覆盖所述光电二极管区域; 在衬底的整个表面上形成第一和第二绝缘层，第一和第二绝缘层彼此具有不同的蚀刻选择性; 通过选择性地去除所述第二绝缘层在所述栅电极的侧面上形成绝缘侧壁; 从晶体管区域去除第一绝缘层; 在所述暴露的晶体管区域中形成高浓度扩散区域，部分地与所述第二低浓度扩散区域重叠; 在高浓度扩散区上形成金属硅化物层。

公开(公告)号：US07582504B2

公开(公告)日：2009-09-01

申请号：US11319596

申请日：2005-12-29

Applicant: Chang Hun Han

Inventor： Chang Hun Han

IPC: H01L21/00 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632

Abstract: A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the upper metal layer; an undoped silicon glass layer deposited on the first nitride layer and polished by chemical-mechanical polishing; color filter array elements deposited and exposed on the undoped silicon glass layer and polished by the chemical-mechanical polishing; and a second nitride layer deposited on the first nitride layer and the color filter array elements and transfer-etched after forming a sacrificial microlens on the second nitride layer.

Abstract translation: 提供一种CMOS图像传感器及其制造方法，其中使用用于钝化的氮化物层作为微透镜以减少拓扑结构。 CMOS图像传感器包括部分沉积在电介质层上的上金属层; 沉积在上金属层上的第一氮化物层; 沉积在第一氮化物层上并通过化学机械抛光抛光的未掺杂的硅玻璃层; 滤色器阵列元件沉积并暴露在未掺杂的硅玻璃层上，并通过化学机械抛光抛光; 以及沉积在第一氮化物层和滤色器阵列元件上的第二氮化物层，并且在第二氮化物层上形成牺牲微透镜之后进行转印蚀刻。