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公开(公告)号:US20230048507A1
公开(公告)日:2023-02-16
申请号:US17955450
申请日:2022-09-28
Applicant: ASML Netherlands B.V.
IPC: H01J37/317 , H01J37/04 , H01L27/11 , H01L27/112
Abstract: A method for making a semiconductor memory device comprising a plurality of memory cells for storing one or more data values, the method comprising; exposing a pattern on a wafer for creating structures for a plurality of memory cells for the semiconductor memory device, wherein the pattern is exposed by means of one or more charged particle beams; and varying an exposure dose of the one or more charged particle beams during exposure of the pattern to generate a set of one or more non-common features in one or more structures of at least one of the memory cells, so that the structures of the at least one memory cell differ from the corresponding structures of other memory cells of the semiconductor memory device.
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242.
公开(公告)号:US20230048272A1
公开(公告)日:2023-02-16
申请号:US17952067
申请日:2022-09-23
Applicant: ASML NETHERLANDS B.V.
Inventor: Raymond Wilhelmus Louis LAFARRE , Nicolaas TEN KATE , Nina Vladimirovna DZIOMKINA , Yogesh Pramod KARADE
IPC: G03F7/20 , H01L21/687 , C23C16/44
Abstract: A substrate holder for a lithographic apparatus has a planarization layer provided on a surface thereof. The planarization layer provides a smooth surface for the formation of an electronic component such as a thin film electronic component. The planarization layer may be provided in multiple sub layers. The planarization layer may smooth over roughness caused by removal of material from a blank to form burls on the substrate holder.
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公开(公告)号:US11573496B2
公开(公告)日:2023-02-07
申请号:US17458216
申请日:2021-08-26
Applicant: ASML Netherlands B.V.
Inventor: Nick Kant , Martijn Cornelis Schaafsma
IPC: G03F7/20
Abstract: A lithographic apparatus comprising a projection system comprising at least one optical component and configured to project a pattern onto a substrate. The lithographic apparatus further comprises a control system arranged to reduce the effects of heating and/or cooling of an optical component in a lithographic process. The control system is configured at least: to select at least one of a plurality of mode shapes to represent a relationship between at least one input in the lithographic process and an aberration resulting from the input and to generate and apply a correction to the lithographic apparatus based on the mode shape.
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公开(公告)号:US20230035511A1
公开(公告)日:2023-02-02
申请号:US17791641
申请日:2021-01-04
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: Ronny DER KINDEREN , Tian GANG , Todd R. DOWNEY
IPC: G03F7/20
Abstract: A system, method, a lithographic apparatus and a software product configured to determine a drift in an attribute of an illumination and a corresponding drift correction. The system includes a lithographic apparatus that includes at least two sensors, each configured to measure a property related to an illumination region provided for imaging a substrate. Furthermore, a processor is configured to: determine, based on a ratio of the measured property, a drift of the illumination region with respect to a reference position; determine, based on the drift of the illumination region, a drift in an attribute related to the illumination upstream of the illumination region measured by the at least two sensors, and determine, based on the drift in the attribute, the drift correction to be applied to the attribute to compensate for the drift in the attribute.
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公开(公告)号:US20230035488A1
公开(公告)日:2023-02-02
申请号:US17789160
申请日:2020-12-19
Applicant: ASML NETHERLANDS B.V.
Inventor: Elie BADR
Abstract: A metrology method comprising: performing a first exposure on a substrate to form a first patterned layer including a plurality of first target units, each first target unit comprising a first target feature; performing a second exposure on the substrate to form a second patterned layer comprising second target units overlying respective ones of the first target units, each of the second target units having a second target feature, wherein ones of the second target units have the second target feature positioned at respectively different offsets relative to a reference position: imaging the second target units overlaid on the first target units; and determining an edge placement error based on positions of edges of second target features in second target units relative to edges of the first target feature of the underlying first target unit.
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公开(公告)号:US20230028848A1
公开(公告)日:2023-01-26
申请号:US17782695
申请日:2020-11-18
Applicant: ASML Netherlands B.V.
Inventor: Joshua Mark Lukens
Abstract: An apparatus for monitoring a stream of droplets of target material for generating a radiation beam in a radiation source, wherein the apparatus comprises: a target material emitter for creating the stream of droplets of target material, wherein the target material emitter comprises a chamber configured for the target material to pass through before forming the stream of droplets; a first transducer configured to generate acoustic pressures in the chamber, and a second transducer configured to sense the acoustic pressures in the chamber.
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公开(公告)号:US20230028799A1
公开(公告)日:2023-01-26
申请号:US17785896
申请日:2020-12-17
Applicant: ASML NETHERLANDS B.V.
Inventor: Wei FANG , Zhong-wei CHEN
IPC: H01J37/24 , H01J37/075 , H01J37/073
Abstract: Apparatuses, methods, and systems for ultra-fast beam current adjustment for a charged-particle inspection system include an charged-particle source configured to emit charged particles for scanning a sample; and an emission booster configured to configured to irradiate electromagnetic radiation onto the charged-particle source for boosting charged-particle emission in a first cycle of a scanning operation of the charged-particle inspection system, and to stop irradiating the electromagnetic radiation in a second cycle of the scanning operation.
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公开(公告)号:US11563298B2
公开(公告)日:2023-01-24
申请号:US17460430
申请日:2021-08-30
Applicant: ASML NETHERLANDS B.V.
Inventor: John Colin Travers , Federico Belli , Malte Christian Brahms , Andreas Johannes Antonius Brouns , Ronald Franciscus Herman Hugers
Abstract: A broadband radiation source device, including a fiber assembly having a plurality of optical fibers, each optical fiber being filled with a gas medium, wherein the broadband radiation source device is operable such that subsets of the optical fibers are independently selectable for receiving a beam of input radiation so as to generate a broadband output from only a subset of the plurality of optical fibers at any one time.
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249.
公开(公告)号:US11561479B2
公开(公告)日:2023-01-24
申请号:US17428223
申请日:2020-01-03
Applicant: ASML Netherlands B.V.
Inventor: Hans Butler , Bas Jansen , Cornelius Adrianus Lambertus De Hoon
Abstract: The invention relates to an electronic system for an accelerometer having a piezoelectric element and a first mechanical resonance frequency, comprising: a) a damping circuit configured to: —receive an acceleration signal from the piezoelectric element; —electronically dampen an amplitude of the first mechanical resonance frequency; and—generate a damped acceleration signal, b) an extender configured to: —receive the damped acceleration signal; —extend the frequency response; and—output an extended damped acceleration signal, wherein the extender is configured to have a first electronic anti-resonance frequency matching the damped first mechanical resonance frequency, and to have a frequency response between the first electronic anti-resonance frequency and a higher second frequency that is substantially opposite to a corresponding frequency response of the combination of the accelerometer and the damping circuit.
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公开(公告)号:US11561477B2
公开(公告)日:2023-01-24
申请号:US16640500
申请日:2018-09-05
Applicant: ASML NETHERLANDS B.V.
Inventor: Jing Su , Yen-Wen Lu , Ya Luo
Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.
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