Abstract:
In a video processor unit, a method of providing a video data stream at a clock rate that is independent of a pixel clock rate. Receiving native video data from a video source at a native clock rate, storing the video data in a memory unit, reading selected portions of the video data at a memory clock rate, rasterizing the selected video data, packetizing the rasterized video data, sending the packetized video data to a display unit by way of a link at a link rate, wherein the link rate is directly related to the memory clock rate.
Abstract:
On a substrate of a liquid crystal display device, there are arranged pixel electrodes (6) in a matrix-like formation, TFTs (7) connected to the pixel electrodes (6), video lines (5) and scan lines (2) both of which connected the TFTs (7), and a protective film interposed between the video lines (5) and the pixel electrodes (6). On the substrate, two video lines (5) are laid side by side between the pixel electrodes, and grooves (22) are formed in the protective film between the adjacent video lines (5). Video lead-out lines and scan lead-out lines are arranged in a similar manner.
Abstract:
The Mn—Zn ferrite of the present invention contains basic components of 44.0 to 50.0 mol % (50.0 mol % is excluded) Fe2O3, 4.0 to 26.5 mol % ZnO and the remainder MnO, and has a real part &egr;′ of complex relative permittivity of 20,000 or less at 1 kHz and 50 or less at 1 MHz, thereby maintaining initial permeability in a wide frequency band, showing a low stray capacitance with a coil provided, and ensuring an excellent impedance in a wide frequency band. And a coil using the Mn—Zn ferrite as a magnetic core is also provided.
Abstract translation:本发明的Mn-Zn铁氧体含有44.0〜50.0摩尔%(除去50.0摩尔%)Fe 2 O 3,4.0〜26.5摩尔%ZnO,其余为MnO的碱性成分,其相对介电常数为 在1kHz下为20,000或更小,在1MHz下为50或更小,从而在宽频带中保持初始磁导率,示出了提供的线圈的低杂散电容,并确保在宽频带中具有优异的阻抗。 并且还提供了使用Mn-Zn铁氧体作为磁芯的线圈。
Abstract:
This invention provides a Mn—Zn ferrite which has a high electrical resistance and can sufficiently satisfy the use in a high frequency region exceeding 1 MHz. This invention further provides a production process of the Mn—Zn ferrite in which mixed powder whose components are adjusted so as to have a basic component composition containing 44.0 to 50.0 mol% Fe2O3, 4.0 to 26.5 mol % ZnO, 0.1 to 8.0 mol % one or two from TiO2 and SnO2 and the remainder consisting of MnO, and further to contain 0.01 to 2.00 mass % one or more of CoO, NiO, and MgO as additive is pressed, then sintered and cooled in the air or in an atmosphere containing some amount of oxygen.
Abstract translation:本发明提供一种具有高电阻并能够充分满足超过1MHz的高频区域的用途的Mn-Zn铁氧体。 本发明还提供了一种Mn-Zn铁氧体的制造方法,其中调整成分为具有含有44.0〜50.0摩尔%的Fe 2 O 3,4.0〜26.5摩尔%的ZnO,0.1〜8.0摩尔%的ZnO的碱性成分组成的混合粉末 或者两个来自TiO 2和SnO 2,剩余部分由MnO组成,并且还含有0.01至2.00质量%的一种或多种CoO,NiO和MgO作为添加剂,然后在空气中或在含有一部分的气氛中烧结和冷却 氧气量。
Abstract:
An output circuit that prevents the flow of a leakage current from its output terminal to a power supply is able to accommodate voltage levels higher than the power supply voltage level. The output circuit includes a p-channel MOS transistor connected between the output terminal and a high potential power supply. A first switch circuit is connected between the transistor and the high potential power supply. The first switch circuit selectively connects and disconnects a back-gate of the transistor and the high potential power supply in response to an external signal applied to the output terminal.
Abstract:
According to a first aspect of the present invention, a plurality of PN junctions are formed at the surface of a semiconductor substrate under a belt-like conductive film having a spiral shape which constitutes an inductance device. A reverse bias voltage is applied to the PN junctions, and the surface of the substrate is completely depleted. Since the reverse bias voltage is applied to the PN junctions, even though the impurity density of the surface of the substrate is high and the adjacent PN junctions are separated to a degree, the extension of the depletion layers can be increased and complete depletion of the surface of the substrate can be achieved.
Abstract:
A Mn—Zn ferrite having large electrical resistance, which can withstand the use in high frequency region exceeding 1 MHz, is provided. The Mn—Zn ferrite comprises the following basic components: 44.0 to 50.0 mol % Fe2O3, 4.0 to 26.5 mol % ZnO, 0.1 to 8.0 mol % at least one member selected from the group consisting of TiO2 and SnO2, 0.1 to 16.0 mol % CuO, and the remainder being MnO. By the addition of TiO2, SnO2 and CuO, even if the material is sintered in the air, electrical resistance of 103 times or more as high as that of the conventional Mn—Zn ferrite can be obtained, and a high initial permeability of 300-400 as estimated can be secured even at high frequency of 5 MHz.
Abstract:
A phase modulated light is propagated through an optical fiber sensing loop, from which a propagated light is obtained. The propagated light is converted to an electric signal, from which a fundamental wave component and even number harmonic wave components of a phase modulating signal for the phase modulated signal are detected. In accordance with the changes of the fundamental and even number harmonic wave components, fault is detected. On the other hand, the electric signal may be integrated to provide an integrated signal. In accordance with the comparison between the integrated signal and a fault reference voltage, the fault may be detected.
Abstract:
An operational amplifier has a differential amplification section, an output section, a control signal generation unit, and a drive control unit. The output section has a first transistor of a first conductivity type and a second transistor of a second conductivity type that is opposite to the first conductivity type. The first and second transistors are connected in series between a first power source unit and a second power source unit, and the first transistor is driven according to an output of the differential amplification section. The control signal generation unit is used to detect a current flowing through the first transistor and generate a control signal in response to the detected current. The drive control unit is used to drive the second transistor in response to the control signal.
Abstract:
In the magnetic recording medium with a total thickness of 12.5 .mu.m, a magnetic layer is formed on one surface of a non-magnetic supporter, and a back coat layer with a thickness of 1.0 .mu.m and composed of solid powder and a binder is formed on the other surface of the same non-magnetic supporter. The solid powder contains platelet inorganic powder and carbon black powder mixed in such a mix rate that the carbon black powder is between 5 and 20 parks by weight, when the platelet inorganic powder is 100 parts by weight. In spite of the fact that the total thickness of the magnetic recording medium is as thin as 12.5 .mu.m, a sufficient mechanical strength and a sufficient travel stability can be both obtained, while preventing tape damage such as breakage, wrinkles, etc.