Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation
    251.
    发明授权
    Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation 有权
    应变补偿的铟镓砷量子阱光电导体,具有高铟含量的扩展波长操作

    公开(公告)号:US06229152B1

    公开(公告)日:2001-05-08

    申请号:US09252494

    申请日:1999-02-18

    CPC classification number: B82Y20/00 H01L31/0328 H01L31/035236

    Abstract: The use of highly compressively strained In1−xGaxAs quantum wells having a high In content for the detection of light to a wavelength of &lgr;≈2.1 &mgr;m is disclosed. Crystal quality is maintained through strain compensation using tensile strained barriers of InGaAs, InGaP, or InGaAsP. High efficiencies have been achieved in detectors fabricated using this technique. The theoretical cutoff wavelength limit for diodes fabricated using this technique is calculated to be &lgr;˜2.1 &mgr;m. Lattice mismatched layers may be used to transition between compressively strained layers and tensile strained layers to prevent the crystal from breaking up. Multiple quantum wells are formed with multiple periods of strained InGaAs, transition layers and tensile strained layers. These detectors have application in semiconductor, amplifiers, detectors, optical switches, images, etc.

    Abstract translation: 公开了使用具有高In含量的高度压缩应变的In1-xGaxAs量子阱,用于将光检测到羔羊≈2.1μm的波长。 通过使用InGaAs,InGaP或InGaAsP的拉伸应变屏障的应变补偿来保持晶体质量。 在使用这种技术制造的检测器中已经实现了高效率。 使用该技术制造的二极管的理论截止波长极限计算为lambd〜2.1mum。 晶格不匹配层可用于在压缩应变层和拉伸应变层之间转变,以防止晶体破裂。 多个量子阱由多个应变InGaAs,过渡层和拉伸应变层形成。 这些检测器适用于半导体,放大器,检测器,光开关,图像等。

    Stacked organic light emitting devices
    256.
    发明授权
    Stacked organic light emitting devices 失效
    堆叠式有机发光装置

    公开(公告)号:US5917280A

    公开(公告)日:1999-06-29

    申请号:US792046

    申请日:1997-02-03

    CPC classification number: H01L27/3209

    Abstract: Arrangements for biasing the individual light emitting elements of a stacked organic light emitting device (SOLED). A circuit is provided for independently driving the individual OLEDs in a conventional SOLED having one electrode coupled to ground potential and one further electrode for each of the OLEDs in the stack. Additionally, new SOLED structures are described in which each OLED in the stack is provided with a ground reference. A SOLED combining upright and inverted OLEDs is also described.

    Abstract translation: 用于偏置堆叠的有机发光器件(SOLED)的各个发光元件的布置。 提供了一种用于独立驱动具有耦合到地电位的一个电极的传统SOLED中的各个OLED的独立驱动电路和用于堆叠中的每个OLED的一个另外的电极。 另外,描述了新的SOLED结构,其中堆叠中的每个OLED被提供有接地参考。 还描述了结合直立和倒置的OLED的SOLED。

    All-optical modulation in crystalline organic semiconductor waveguides
    259.
    发明授权
    All-optical modulation in crystalline organic semiconductor waveguides 失效
    结晶有机半导体波导中的全光调制

    公开(公告)号:US5287421A

    公开(公告)日:1994-02-15

    申请号:US003021

    申请日:1993-01-11

    CPC classification number: G02F1/361 G02F1/365 G02F1/065 G02F1/3515

    Abstract: All-optical modulation occurs in crystalline organic semiconductor waveguides (10a) grown by the ultrahigh vacuum process of organic molecular-beam deposition onto substrates (10b). Two light beams with wavelengths of 1.06 and 0.514 .mu.m from a first source (12) and a second source (34), respectively, may be used as the guided and the pump light sources, respectively. A resonant non-linear coefficient at room temperature of 5.4.times.10.sup.-5 cm.sup.2 /W at 1.06 .mu.occurs at a pump intensity of 1.0 W/cm.sup.2. This large non-linear effect is attributed to free electron-hole pairs produced by the dissociation of excitons generated by the short wavelength beam. A carrier lifetime of (17.+-.1) us, which determines the modulator switching time, is in good agreement with theoretical predictions. This appears to be the first observation of free-carrier-induced index modulation in crystalline organic waveguides.

    Abstract translation: 全光调制发生在通过有机分子束沉积到基板(10b)上的超高真空工艺生长的结晶有机半导体波导(10a)中。 分别来自第一源(12)和第二源(34)的波长为1.06和0.514(my)m的两个光束可以分别用作被引导和泵浦光源。 在1.06(me)时,在室温为5.4×10 -5 cm 2 / W的共振非线性系数发生在1.0W / cm 2的泵浦强度下。 这种大的非线性效应归因于由短波长束产生的激子解离产生的自由电子 - 空穴对。 确定调制器切换时间的(17 + -1)us的载波寿命与理论预测非常一致。 这似乎是结晶有机波导中自由载体诱导的指数调制的第一次观察。

    Avalanche photodiode with floating guard ring
    260.
    发明授权
    Avalanche photodiode with floating guard ring 失效
    雪崩光电二极管与浮动保护环

    公开(公告)号:US4857982A

    公开(公告)日:1989-08-15

    申请号:US141320

    申请日:1988-01-06

    CPC classification number: H01L31/1075

    Abstract: The disclosed invention as direction to a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of this invention is characterized by a plurality of floating guard rings which are separated about a central region and doped in the opposite high concentration from that of the multiplication region in which they are positioned. These rings float in the sense that they have no contact with the metalized p-contact of the photodiode; and, therefore, no direct contact with the current source. This structure results in an enhanced avalanche effect in the central region with limited edge breakdown undesirable consequences. In addition to this structure, an alternative embodiment suggests the use of both a floating ring and this slab below the central region, of a dimension slightly smaller than the smaller region and concentric with it to achieve an optimized central avalanche breakdown with reduced edge breakdown of the electric fields formed during reversed biasing of the APD (avalanche photodiode).

    Abstract translation: 所公开的发明作为对分离的乘法和吸收区异质结构设计(SAM-APD)的半导体材料雪崩光电二极管的方向。 本发明的改进的SAM-APD的特征在于多个浮动保护环,其围绕中心区域分离并且以与它们所位于的乘法区域相反的高浓度掺杂。 这些环浮动在它们与光电二极管的金属化p-接触不接触的意义上; 因此,与目前的来源不直接接触。 这种结构导致中心区域中的雪崩效应增加,边缘破裂有限,不利影响。 除了这种结构之外,替代实施例提出了在中心区域之下使用浮动环和该板坯,其尺寸略小于较小区域并与其同心,以实现优化的中心雪崩击穿,并减少边缘击穿 在APD(雪崩光电二极管)的反向偏置期间形成的电场。

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