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    Method and apparatus for depositing LED organic film
    2.
    发明授权
    Method and apparatus for depositing LED organic film 有权
    用于沉积LED有机膜的方法和装置

    公开(公告)号：US08986780B2

    公开(公告)日：2015-03-24

    申请号：US13088323

    申请日：2011-04-15

    Applicant: Vladimir Bulovic ,  Marc A. Baldo ,  Martin A. Schmidt ,  Valerie Gassend ,  Jianglong Chen

    Inventor： Vladimir Bulovic ,  Marc A. Baldo ,  Martin A. Schmidt ,  Valerie Gassend ,  Jianglong Chen

    IPC: B05D3/04 ,  B05D1/12 ,  H01L51/00 ,  H01L51/56

    CPC classification number: H01L51/0011 ,  B05D1/12 ,  H01L51/56

    Abstract: The disclosure relates to a method for depositing an organic film layer on a substrate. In one implementation a method to deposit organic film by generating vaporized organic particles; streaming a carrier fluid proximal to a source to carry the vaporized organic particles and solid organic particles from the source towards the substrate; transporting the vaporized and solid organic particles through a discharge nozzle with a plurality of micro-pore openings, placed between the source and the substrate, that permits the passage of at least a portion of the vaporized or solid organic particles through the micro-pores; depositing the vaporized organic particles and the solid organic particles that are transported through the discharge nozzle onto the substrate.

    Abstract translation: 本公开涉及一种在基板上沉积有机膜层的方法。 在一个实施方案中，通过产生蒸发的有机颗粒沉积有机膜的方法; 流动靠近源的载体流体将气化的有机颗粒和固体有机颗粒从源向衬底运送; 通过放置在源和基底之间的多个微孔开口的排放喷嘴输送蒸发的和固体的有机颗粒，其允许至少一部分蒸发的或固体的有机颗粒通过微孔; 将通过排出喷嘴输送的蒸发的有机颗粒和固体有机颗粒沉积到基材上。

    Organic light emitting devices based on the formation of an electron-hole plasma
    6.
    发明授权
    Organic light emitting devices based on the formation of an electron-hole plasma 有权
    基于形成电子空穴等离子体的有机发光器件

    公开(公告)号：US06970490B2

    公开(公告)日：2005-11-29

    申请号：US10143354

    申请日：2002-05-10

    Applicant: Russell James Delmar Holmes ,  Marc A. Baldo ,  Stephen R. Forrest

    Inventor： Russell James Delmar Holmes ,  Marc A. Baldo ,  Stephen R. Forrest

    IPC: H01L51/50 ,  H01S5/12 ,  H01S5/125 ,  H01S5/20 ,  H01S5/36 ,  H01S5/00

    CPC classification number: H01S5/36 ,  H01L51/006 ,  H01L51/5048 ,  H01L51/5296 ,  H01S5/06203 ,  H01S5/12 ,  H01S5/125 ,  H01S5/2004

    Abstract: When the density of excitons in an organic single crystal (including the linear acenes, polyacenes, and thiophenes) approaches the density of molecular sites, an electron-hole plasma may form in the material altering the overall excitonic character of the system. The formation of the electron-hole plasma arises as a result of the screening of Coulomb interactions within individual excitons by injected free carriers. The large exciton densities required to accomplish this screening process can only be realized when excitons collect near dislocations, defects, traps, or are confined in heterostructures. Such confinement and subsequently large exciton densities allows for the observation of physical phenomena not generally accessible in an organic material. Specifically, the formation of an electron-hole plasma in an organic single crystal can allow for the observation of field-effect transistor action and electrically-pumped lasing. Amorphous organic materials and polymeric organic materials can also used to sustain an electron-hole plasma and demonstrate similar phenomena as well.

    Abstract translation: 当有机单晶（包括线性烯烃，多烯烃和噻吩）中的激子的密度接近分子位点的密度时，在材料中可能形成电子 - 空穴等离子体，从而改变系统的整体激子特性。 电子空穴等离子体的形成是通过注入游离载体筛选个别激子内的库仑相互作用的结果。 完成该筛选过程所需的大的激子密度只能在激子收集到位错，缺陷，陷阱附近或被限制在异质结构中时实现。 这种约束和随后的大的激子密度允许观察有机材料中通常不可接近的物理现象。 具体地说，在有机单晶中形成电子空穴等离子体可以观察场效应晶体管作用和电泵浦激光。 无定形有机材料和聚合有机材料也可以用于维持电子 - 空穴等离子体并且也表现出类似的现象。

    Phosphorescent organic light emitting devices
    7.
    发明授权
    Phosphorescent organic light emitting devices 有权
    磷光有机发光器件

    公开(公告)号：US06645645B1

    公开(公告)日：2003-11-11

    申请号：US09629335

    申请日：2000-08-01

    Applicant: Chihaya Adachi ,  Marc A. Baldo ,  Stephen R. Forrest

    Inventor： Chihaya Adachi ,  Marc A. Baldo ,  Stephen R. Forrest

    IPC: H05B3314

    CPC classification number: H01L51/5016 ,  H01L51/005 ,  H01L51/0069 ,  H01L51/0072 ,  H01L51/0084 ,  H01L51/5004 ,  H01L51/5048 ,  Y10S428/917

    Abstract: An organic light emitting device structure having an organic light emitting device (OLED) over a substrate, where the OLED has, for example, an anode, a hole transporting layer (HTL), a first electron transporting layer (ETL) that is doped with a phosphorescent material, a second electron transporting layer (ETL), and a cathode. The OLEDs of the present invention are directed, in particular, to devices that include an emissive layer comprised of an electron transporting host material having a triplet excited state energy level that is higher than the emissive triplet excited state energy level of the phosphorescent dopant material.

    Abstract translation: 一种在衬底上具有有机发光器件（OLED）的有机发光器件结构，其中OLED具有例如阳极，空穴传输层（HTL），第一电子传输层（ETL），其掺杂有 磷光材料，第二电子传输层（ETL）和阴极。 本发明的OLED特别涉及包括由具有高于磷光掺杂剂材料的发光三重激发态能级的三线态激发态能级的电子传输性主体材料构成的发射层的器件。

    Method of lift-off patterning thin films in situ employing phase change resists
    9.
    发明授权
    Method of lift-off patterning thin films in situ employing phase change resists 有权
    使用相变抗蚀剂原位剥离图案化薄膜的方法

    公开(公告)号：US08841152B2

    公开(公告)日：2014-09-23

    申请号：US13465065

    申请日：2012-05-07

    Applicant: Matthias Erhard Bahlke ,  Marc A. Baldo ,  Hiroshi Antonio Mendoza

    Inventor： Matthias Erhard Bahlke ,  Marc A. Baldo ,  Hiroshi Antonio Mendoza

    IPC: H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  H01L51/00

    CPC classification number: H01L51/0016

    Abstract: Method for making a patterned thin film of an organic semiconductor. The method includes condensing a resist gas into a solid film onto a substrate cooled to a temperature below the condensation point of the resist gas. The condensed solid film is heated selectively with a patterned stamp to cause local direct sublimation from solid to vapor of selected portions of the solid film thereby creating a patterned resist film. An organic semiconductor film is coated on the patterned resist film and the patterned resist film is heated to cause it to sublime away and to lift off because of the phase change.

    Abstract translation: 制造有机半导体图案化薄膜的方法。 该方法包括将固体膜冷凝到冷却到低于抗蚀剂气体冷凝点温度的基底上。 使用图案化的印模选择性地冷凝凝固的固体膜，以引起固体膜的选定部分的固体至蒸气的局部直接升华，从而形成图案化的抗蚀剂膜。 将有机半导体膜涂覆在图案化的抗蚀剂膜上，并且图案化的抗蚀剂膜被加热以使其升华并由于相变而脱落。

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