公开(公告)号：US20130207565A1

公开(公告)日：2013-08-15

申请号：US13788356

申请日：2013-03-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA ,  Takeshi FUKUNAGA

IPC: H05B37/00

CPC classification number: H05B37/00 ,  G02F1/13452 ,  G02F1/13454 ,  G09G3/3648 ,  G09G3/3688 ,  G09G2300/0408

Abstract: In an electrooptical device including an electrooptical modulating layer between a first substrate 101 and a second substrate 105, all edges 107 to 109 of the first substrate 101 and the second substrate 105, except an edge where IC chips 110 and 111 are attached, are trued up each other between the first substrate 101 and the second substrate 105. By this, it is possible to make the area of the first substrate 101 minimum.

Abstract translation: 在包括第一基板101和第二基板105之间的电光调制层的电光装置中，除了安装有IC芯片110和111的边缘之外，第一基板101和第二基板105的所有边缘107至109被修整 在第一基板101和第二基板105之间彼此相对。由此，可以使第一基板101的面积最小化。

公开(公告)号：US20130200370A1

公开(公告)日：2013-08-08

申请号：US13845424

申请日：2013-03-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L22/34 ,  H01L27/0207 ,  H01L27/1225 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leadind to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

Abstract translation: 逻辑电路包括具有使用氧化物半导体形成的沟道形成区域的薄膜晶体管，以及通过关闭薄膜晶体管而使端子中的一个成为浮置状态的电容器。 氧化物半导体的氢浓度为5×1019（原子/ cm3）以下，因此在不产生电场的状态下基本上用作绝缘体。 因此，可以减小薄膜晶体管的截止电流，从而通过薄膜晶体管抑制存储在电容器中的电荷的泄漏。 因此，可以防止逻辑电路的故障。 此外，可以通过减小薄膜晶体管的截止电流来降低在逻辑电路中流动的过量的电流，导致逻辑电路的低功耗。

公开(公告)号：US20130193916A1

公开(公告)日：2013-08-01

申请号：US13792969

申请日：2013-03-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: H02J7/02 ,  H04B5/00

CPC classification number: H02J50/80 ,  G06F1/263 ,  G06K19/0702 ,  G06K19/0723 ,  G06K19/07749 ,  H01L21/84 ,  H01L27/12 ,  H02J50/10 ,  H04B5/0037

Abstract: The present invention provides a power supply circuit provided with a battery as a power source for supplying power to an RFID, and the battery of the power supply circuit is charged with a wireless signal. Then, a switching circuit is provided in the power supply circuit that supplies power to a signal control circuit which transmits and receives individual information to and from the outside to intermittently control supply of power to the signal control circuit by a signal from a low-frequency signal generation circuit.

Abstract translation: 本发明提供了一种电源电路，其设置有作为用于向RFID供电的电源的电池，并且向电源电路的电池充电无线信号。 然后，在电源电路中设置开关电路，该电源电路向向外部发送和接收个人信息的信号控制电路供电，以间歇地控制来自低频的信号对信号控制电路的供电 信号发生电路。

公开(公告)号：US20130121456A1

公开(公告)日：2013-05-16

申请号：US13738390

申请日：2013-01-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G11C19/28

CPC classification number: H03K17/693 ,  G09G3/2092 ,  G09G3/3266 ,  G09G2300/0408 ,  G09G2300/08 ,  G09G2310/0267 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/021 ,  G11C19/28 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78696 ,  H03K17/002

Abstract: An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit.

Abstract translation: 本发明的目的是提供一种驱动电路，该驱动电路包括一个通常的薄膜晶体管，该驱动电路确保了小故障和高可靠性的工作。 驱动器电路包括具有第一晶体管和第二晶体管的反相器电路的静态移位寄存器和包括第三晶体管的开关。 第一至第三晶体管各自包括氧化物半导体的半导体层，并且是耗尽型晶体管。 用于驱动第三晶体管的时钟信号的振幅电压高于用于驱动逆变器电路的电源电压。

公开(公告)号：US20250169184A1

公开(公告)日：2025-05-22

申请号：US19029162

申请日：2025-01-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H10D86/60 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G11C19/18 ,  G11C19/28 ,  H03K17/16 ,  H03K19/003 ,  H03K19/096 ,  H10D30/67 ,  H10D86/40

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

公开(公告)号：US20250157432A1

公开(公告)日：2025-05-15

申请号：US19021963

申请日：2025-01-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA ,  Atsushi UMEZAKI

IPC: G09G3/36 ,  G11C19/00 ,  H03K17/687 ,  H03K19/00 ,  H03K19/0185 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60 ,  H10D89/10

Abstract: The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

公开(公告)号：US20250151408A1

公开(公告)日：2025-05-08

申请号：US19018109

申请日：2025-01-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: H10D86/60 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/36 ,  H10D30/01 ,  H10D30/67 ,  H10D62/40 ,  H10D86/01 ,  H10D86/40 ,  H10D99/00

Abstract: One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

公开(公告)号：US20250107154A1

公开(公告)日：2025-03-27

申请号：US18973522

申请日：2024-12-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L29/786 ,  H01L21/66 ,  H01L27/02 ,  H01L27/12

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US20250014532A1

公开(公告)日：2025-01-09

申请号：US18776588

申请日：2024-07-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/36 ,  G02F1/1345 ,  G06F3/042 ,  G06F3/044

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US20240428710A1

公开(公告)日：2024-12-26

申请号：US18830873

申请日：2024-09-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshiyuki ISA ,  Akio ENDO ,  Yosuke TSUKAMOTO ,  Jun KOYAMA

IPC: G09F9/30 ,  G06F1/16

Abstract: An electronic device including a large display region and with improved portability is provided. An electronic device with improved reliability is provided. An information processing device includes a first film, a panel substrate, and at least a first housing. The panel substrate has flexibility and a display region, and the first film has a visible-light-transmitting property and flexibility. The first housing includes a first slit, the panel substrate includes a region positioned between the first film and a second film, the first slit has a function of storing the region, and one or both of the panel substrate and the first film can slide along the first slit.