公开(公告)号：US20220357672A1

公开(公告)日：2022-11-10

申请号：US17762863

申请日：2020-09-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS

IPC: G03F7/20

Abstract: A method of inferring a value for a first processing parameter of a lithographic process, the first processing parameter being subject to a coupled dependency of a second processing parameter. The method includes determining a first metric and a second metric from measurement data, each of the first metric and second metric being dependent on both the first processing parameter and second processing parameter The first metric shows a stronger dependence to the first processing parameter than the second processing parameter and the second metric shows a stronger dependence to the second processing parameter than the first processing parameter. The value for the first processing parameter is inferred from the first and second metrics.

公开(公告)号：US20220351932A1

公开(公告)日：2022-11-03

申请号：US17633556

申请日：2020-08-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Jian ZHANG ,  Ning YE ,  Zhiwen KANG ,  Yixiang WANG

IPC: H01J37/02 ,  G02B27/09

Abstract: A system and a method for manipulating a beam of an Advanced Charge Controller module in different planes in an e-beam system are provided. Some embodiments of the system include a lens system configured to manipulate a beam in the tangential plane and the sagittal plane such that the beam spot is projected onto the wafer with high luminous energy. Some embodiments of the system include a lens system comprising at least two cylindrical lens.

公开(公告)号：US20220351075A1

公开(公告)日：2022-11-03

申请号：US17624014

申请日：2020-06-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Vahid BASTANI ,  Dag SONNTAG ,  Reza SAHRAEIAN ,  Dimitra GKOROU

IPC: G06N20/00 ,  G03F7/20

Abstract: A method of determining a contribution of a process feature to the performance of a process of patterning substrates. The method may include obtaining a first model trained on first process data and first performance data. One or more substrates may be identified based on a quality of prediction of the first model when applied to process data associated with the one or more substrates. A second model may be trained on second process data and second performance data associated with the identified one or more substrates. The second model may be used to determine the contribution of a process feature of the second process data to the second performance data associated with the one or more substrates.

公开(公告)号：US20220350265A1

公开(公告)日：2022-11-03

申请号：US17627720

申请日：2020-06-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Günes NAKIBOGLU ,  Nicholas Peter WATERSON ,  Remco VAN DE MEERENDONK ,  Steve Gregory BRUST ,  Dirk Martinus Gerardus Petrus Wilhelmus JAKOBS ,  Shravan KOTTAPALLI

IPC: G03F7/20

Abstract: A passive flow induced vibration reduction system for use in a temperature conditioning system that controls the temperature of at least one component within a lithographic apparatus. This FIV reduction system includes: a conduit that provides a flow path for a liquid through the system; a liquid filled cavity in fluid connection with the conduit, wherein the fluid connection is provided via one or more openings in the wall of the conduit; a membrane configured such that it separates the liquid in the liquid filled cavity from a gas at a substantially ambient pressure and the membrane is configured such that compliance of the membrane reduces at least low frequency flow induced vibrations in the liquid flowing through the conduit; and an end-stop located on the gas side of the membrane, wherein the end-stop is configured to limit an extent of deflection of the membrane.

公开(公告)号：US11487198B2

公开(公告)日：2022-11-01

申请号：US17477765

申请日：2021-09-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Jingjing Liu

IPC: G03F1/36

Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

公开(公告)号：US11482399B2

公开(公告)日：2022-10-25

申请号：US16652352

申请日：2018-09-25

Applicant: ASML Netherlands B.V.

Inventor： Jian Zhang ,  Qing Jiu Chen ,  Yixiang Wang

IPC: H01J37/22 ,  G01N21/95 ,  G01N21/956 ,  G02B27/09

Abstract: A system and method for advanced charge control of a light beam is provided. The system comprising a laser source comprising a laser diode for emitting a beam and a beam homogenizer to homogenize the emitted beam. The system and methods further comprise a beam shaper configured to shape the emitted beam using an anamorphic prism group and a driver configured to direct the shaped beam to a specified position on a wafer, wherein the laser source, the beam shaper, and the driver are coaxially aligned.

公开(公告)号：US20220334500A1

公开(公告)日：2022-10-20

申请号：US17636452

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Hadi YAGUBIZADE ,  Min-Seok KIM ,  Yingchao CUI ,  Daan Maurits SLOTBOOM ,  Jeonghyun PARK ,  Jeroen COTTAAR

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：US11474440B2

公开(公告)日：2022-10-18

申请号：US17081492

申请日：2020-10-27

Applicant: ASML Netherlands B.V.

Inventor： Alexander I. Ershov

IPC: G03F7/00 ,  G03F7/20

Abstract: Method of and apparatus for repairing an optical element disposed in a vacuum chamber while the optical element is in the vacuum chamber. An exposed surface of the optical element is exposed to an ion flux generated by an ion source to remove at least some areas of the surface that have been damaged by exposure to the environment within the vacuum chamber. The method and apparatus are especially applicable to repair multilayer mirrors serving as collectors in systems for generating EUV light for use in semiconductor photolithography.

公开(公告)号：US20220326627A1

公开(公告)日：2022-10-13

申请号：US17608760

申请日：2020-05-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Hans BUTLER ,  Bas JANSEN

IPC: G03F7/20 ,  H02N2/02 ,  H02N2/06

Abstract: An actuator assembly including a first piezo actuator and a second piezo actuator. The piezo actuator has a correction unit configured to determine an output voltage difference representing a difference between a voltage at the output terminal of the first piezo actuator and a voltage at the output terminal of the second piezo actuator, and a first power correction for correcting the first power signal and/or a second power correction for correcting the second power signal, based on the output voltage difference.

公开(公告)号：US20220319797A1

公开(公告)日：2022-10-06

申请号：US17708517

申请日：2022-03-30

Applicant: ASML Netherlands B.V.

Inventor： Shichen GU ,  Weiming REN ,  Qingpo XI

IPC: H01J37/09 ,  H01J37/20

Abstract: Systems and methods of enhancing imaging resolution by reducing crosstalk between detection elements of a secondary charged-particle detector in a multi-beam apparatus are disclosed. The multi-beam apparatus may comprise an electro-optical system comprising a beam-limit aperture plate having a surface substantially perpendicular to an optical axis, the beam-limit aperture plate comprising a first aperture at a first distance relative to the surface of the beam-limit aperture plate, and a second aperture at a second distance relative to the surface of the beam-limit aperture plate, the second distance being different from the first distance. The first aperture may be a part of a first set of apertures of the beam-limit aperture plate at the first distance, and the second aperture may be a part of a second set of apertures of the beam-limit aperture plate at the second distance.