公开(公告)号：US20220334500A1

公开(公告)日：2022-10-20

申请号：US17636452

申请日：2020-07-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Hadi YAGUBIZADE ,  Min-Seok KIM ,  Yingchao CUI ,  Daan Maurits SLOTBOOM ,  Jeonghyun PARK ,  Jeroen COTTAAR

IPC: G03F7/20

Abstract: A method of determining a control setting for a lithographic apparatus. The method includes obtaining a first correction for a current layer on a current substrate based on first metrology data associated with one or more previous substrates, and obtaining a second correction for the current layer on the current substrate. The second correction is based on a residual determined based on second metrology data associated with a previous layer on the current substrate. The method further includes determining the control setting for the lithographic apparatus for patterning the current layer on the current substrate by combining the first correction and the second correction.

公开(公告)号：US20180252998A1

公开(公告)日：2018-09-06

申请号：US15765489

申请日：2016-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter TEN BERGE ,  Daan Maurits SLOTBOOM ,  Richard Johannes VAN HAREN ,  Peter Hanzen WARDENIER

IPC: G03F1/72 ,  G03F1/84

Abstract: A method including: determining first error information based on a first measurement and/or simulation result pertaining to a first patterning device in a patterning system; determining second error information based on a second measurement and/or simulation result pertaining to a second patterning device in the patterning system; determining a difference between the first error information and the second error information; and creating modification information for the first patterning device and/or the second patterning device based on the difference between the first error information and the second error information, wherein the difference between the first error information and the second error information is reduced to within a certain range after the first patterning device and/or the second patterning device is modified according to the modification information.

公开(公告)号：US20170108783A1

公开(公告)日：2017-04-20

申请号：US15315885

申请日：2015-05-13

Applicant: ASML Netherlands B.V.

Inventor： Pieter Jacob KRAMER ,  Rogier Sebastiaan GILIJAMSE ,  Niels LAMMERS ,  Daan Maurits SLOTBOOM

IPC: G03F7/20

CPC classification number: G03F9/7046 ,  G03F7/70141 ,  G03F7/70483 ,  G03F7/70525 ,  G03F7/706 ,  G03F7/70633 ,  G03F7/70775 ,  G03F9/7003 ,  G03F9/7049 ,  G03F9/7073

Abstract: A method including determining a position of a first pattern in each of a plurality of target portions on a substrate, based on a fitted mathematical model, wherein the first pattern includes at least one alignment mark, wherein the mathematical model is fitted to a plurality of alignment mark displacements (dx, dy) for the alignment marks in the target portions, and wherein the alignment mark displacements are a difference between a respective nominal position of the alignment mark and measured position of the alignment mark; and transferring a second pattern onto each of the target portions, using the determined position of the first pattern in each of the plurality of target portions, wherein the mathematical model includes polynomials Z1 and Z2: Z1=r2 cos(2θ) and Z2=r2 sin(2θ) in polar coordinates (r, θ) or Z1=x2−y2 and Z2=xy in Cartesian coordinates (x, y).

公开(公告)号：US20220100098A1

公开(公告)日：2022-03-31

申请号：US17425355

申请日：2020-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Mark John MASLOW ,  Koen THUIJS ,  Peter David ENGBLOM ,  Ralph Timotheus HUIJGEN ,  Daan Maurits SLOTBOOM ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20

Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

公开(公告)号：US20180373162A1

公开(公告)日：2018-12-27

申请号：US16061257

申请日：2016-12-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Daan Maurits SLOTBOOM ,  Michiel KUPERS

IPC: G03F7/20 ,  G03F9/00

Abstract: Performance measurement targets are used to measure performance of a lithographic process after processing a number of substrates. In a set-up phase, the method selects an alignment mark type and alignment recipe from among a plurality of candidate mark types by reference to expected parameters of the patterning process. After exposing a number of test substrates using the patterning process, a preferred metrology target type and metrology recipe are selected by comparing measured performance (e.g. overlay) of performance of the patterning process measured by a reference technique. Based on the measurements of position measurement marks and performance measurement targets after actual performance of the patterning process, the alignment mark type and/or recipe may be revised, thereby co-optimizing the alignment marks and metrology targets. Alternative run-to-run feedback strategies may also be compared during subsequent operation of the process.

公开(公告)号：US20240111218A1

公开(公告)日：2024-04-04

申请号：US18387082

申请日：2023-11-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Mark John MASLOW ,  Koen THUIJS ,  Peter David ENGBLOM ,  Ralph Timotheus HUIJGEN ,  Daan Maurits SLOTBOOM ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70525 ,  G03F7/7065 ,  G03F7/70658

Abstract: A method of determining a characteristic of one or more processes for manufacturing features on a substrate, the method including: obtaining image data of a plurality of features on a least part of at least one region on a substrate; using the image data to obtain measured data of one or more dimensions of each of at least some of the plurality of features; determining a statistical parameter that is dependent on the variation of the measured data of one or more dimensions of each of at least some of the plurality of features; determining a probability of defective manufacture of features in dependence on a determined number of defective features in the image data; and determining the characteristic of the one or more processes to have the probability of defective manufacture of features and the statistical parameter.

公开(公告)号：US20180364582A1

公开(公告)日：2018-12-20

申请号：US15994400

申请日：2018-05-31

Applicant: ASML Netherlands B.V.

Inventor： Daan Maurits SLOTBOOM ,  Peter Jacob Kramer ,  Martinus Henrikus Antonius Leenders ,  Bart Dinand Paarhuis

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70141 ,  G03F9/7046 ,  G03F9/7096

Abstract: An apparatus and method for performing a measurement operation on a substrate in accordance with one or more substrate alignment models. The one or more substrate alignment models are selected from a plurality of candidate substrate alignment models. The apparatus, which may be a lithographic apparatus, includes an external interface which enables selection of the substrate alignment model(s) and/or alteration of the substrate alignment model(s) prior to the measurement operation.

公开(公告)号：US20160334713A1

公开(公告)日：2016-11-17

申请号：US15111457

申请日：2014-12-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Daan Maurits SLOTBOOM ,  Pieter Jacob KRAMER ,  Martinus Hendrikus Antonius LEENDERS ,  Bart Dinand PAARHUIS

IPC: G03F7/20

CPC classification number: G03F7/70141 ,  G03F9/7046 ,  G03F9/7096

Abstract: Disclosed is an apparatus and method for performing a measurement operation on a substrate in accordance with one or more substrate alignment models. The one or more substrate alignment models are selected from a plurality of candidate substrate alignment models. The apparatus, which may be a lithographic apparatus, includes an external interface which enables selection of the substrate alignment model(s) and/or alteration of the substrate alignment model(s) prior to the measurement operation.

Abstract translation: 公开了一种用于根据一个或多个衬底对准模型在衬底上执行测量操作的装置和方法。 从多个候选衬底对准模型中选择一个或多个衬底对准模型。 可以是光刻设备的设备包括外部接口，其能够在测量操作之前选择衬底对准模型和/或改变衬底对准模型。

公开(公告)号：US20160170311A1

公开(公告)日：2016-06-16

申请号：US14905611

申请日：2014-08-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Wolfgang HENKE ,  Thomas Leo HOOGENBOOM ,  Pavel IZIKSON ,  Paul Frank LUEHRMANN ,  Daan Maurits SLOTBOOM ,  Jens STAECKER ,  Alexander YPMA

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70625 ,  G03F7/70633

Abstract: A lithography system configured to apply a pattern to a substrate, the system including a lithography apparatus configured to expose a layer of the substrate according to the pattern, and a machine learning controller configured to control the lithography system to optimize a property of the pattern, the machine learning controller configured to be trained on the basis of a property measured by a metrology unit configured to measure the property of the exposed pattern in the layer and/or a property associated with exposing the pattern onto the substrate, and to correct lithography system drift by adjusting one or more selected from: the lithography apparatus, a track unit configured to apply the layer on the substrate for lithographic exposure, and/or a control unit configured to control an automatic substrate flow among the track unit, the lithography apparatus, and the metrology unit.

Abstract translation: 一种光刻系统，被配置为将图案应用于基底，所述系统包括被配置为根据图案暴露基底层的光刻设备，以及机器学习控制器，被配置为控制光刻系统以优化图案的特性， 机器学习控制器被配置为基于由测量单元测量的属性来进行训练，所述测量单元被配置成测量所述层中的暴露图案的性质和/或与将图案暴露于衬底相关联的属性，并且修正光刻系统 通过调整选自以下的一个或多个漂移：光刻设备，被配置为将该层施加在用于光刻曝光的基板上的轨道单元和/或控制单元，被配置为控制轨道单元，光刻设备之间的自动衬底流动， 和计量单位。

公开(公告)号：US20230341785A1

公开(公告)日：2023-10-26

申请号：US18002258

申请日：2021-06-07

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： Simon Reinald HUISMAN ,  Sergey MALYK ,  Yuxiang LIN ,  Daan Maurits SLOTBOOM

IPC: G03F7/20 ,  G03F9/00

CPC classification number: G03F7/70625 ,  G03F9/7088 ,  G03F7/705

Abstract: A system includes an illumination system, an optical element, a switching element and a detector. The illumination system includes a broadband light source that generates a beam of radiation. The dispersive optical element receives the beam of radiation and generates a plurality of light beams having a narrower bandwidth than the broadband light source. The optical switch receives the plurality of light beams and transmits each one of the plurality of light beams to a respective one of a plurality of alignment sensor of a sensor array. The detector receives radiation returning from the sensor array and to generate a measurement signal based on the received radiation.