公开(公告)号：US20130106508A1

公开(公告)日：2013-05-02

申请号：US13661552

申请日：2012-10-26

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Michael R. Kay ,  Philippe Gorisse

IPC: G05F1/46 ,  H03G1/00

CPC classification number: H02M3/156 ,  H02M1/15 ,  H02M2001/0045 ,  H02M2001/0048 ,  H03F1/0216 ,  H03F3/2171 ,  Y02B70/1491

Abstract: A direct current (DC)-DC converter, which includes a parallel amplifier and a switching supply, is disclosed. The switching supply includes switching circuitry, a first inductive element, and a second inductive element. The parallel amplifier has a feedback input and a parallel amplifier output. The switching circuitry has a switching circuitry output. The first inductive element is coupled between the switching circuitry output and the feedback input. The second inductive element is coupled between the feedback input and the parallel amplifier output.

Abstract translation: 公开了一种包括并联放大器和开关电源的直流（DC）-DC转换器。 开关电源包括开关电路，第一电感元件和第二电感元件。 并联放大器具有反馈输入和并行放大器输出。 开关电路具有开关电路输出。 第一电感元件耦合在开关电路输出和反馈输入之间。 第二电感元件耦合在反馈输入端和并行放大器输出端之间。

公开(公告)号：US20130099287A1

公开(公告)日：2013-04-25

申请号：US13655659

申请日：2012-10-19

Applicant: RF MICRO DEVICES, INC.

Inventor： Brian G. Moser ,  Michael T. Fresina

IPC: H01L29/737 ,  H01L21/331

CPC classification number: H01L29/41708 ,  H01L29/0817 ,  H01L29/201 ,  H01L29/205 ,  H01L29/207 ,  H01L29/42304 ,  H01L29/66318 ,  H01L29/7371

Abstract: Embodiments of semiconductor structure are disclosed along with methods of forming the semiconductor structure. In one embodiment, the semiconductor structure includes a semiconductor substrate, a collector layer formed over the semiconductor substrate, a base layer formed over the semiconductor substrate, and an emitter layer formed over the semiconductor substrate. The semiconductor substrate is formed from Gallium Arsenide (GaAs), while the base layer is formed from a Gallium Indium Nitride Arsenide Antimonide (GaInNAsSb) compound. The base layer formed from the GaInNAsSb compound has a low bandgap, but a lattice that substantially matches a lattice constant of the underlying semiconductor substrate formed from GaAs. In this manner, semiconductor devices with lower base resistances, turn-on voltages, and/or offset voltages can be formed using the semiconductor structure.

Abstract translation: 公开了半导体结构的实施例以及形成半导体结构的方法。 在一个实施例中，半导体结构包括半导体衬底，形成在半导体衬底上的集电极层，形成在半导体衬底上的基极层和形成在半导体衬底上的发射极层。 半导体衬底由砷化镓（GaAs）形成，而基底层由氮化镓氮化镓锑化镓（GaInNASSb）化合物形成。 由GaInNASSb化合物形成的基底层具有低带隙，但是基本上与由GaAs形成的下面的半导体衬底的晶格常数匹配的晶格。 以这种方式，可以使用半导体结构形成具有较低基极电阻，导通电压和/或偏移电压的半导体器件。

公开(公告)号：US20040183511A1

公开(公告)日：2004-09-23

申请号：US10389849

申请日：2003-03-17

Applicant: RF MICRO DEVICES, INC.

Inventor： David Dening

IPC: G05F001/40

CPC classification number: H04B15/02 ,  H02M1/44 ,  H02M3/156 ,  H03K7/08 ,  H03K7/10 ,  H04B15/04 ,  H04B2215/067

Abstract: A DC-DC converter includes a variable frequency oscillator, a control system and a power train. The DC-DC converter is well suited for use in a cell phone. The control system uses the output of the oscillator to control the power train. The oscillator varies its frequency as a function of a pseudo random number generator, thereby reducing electromagnetic interference caused by ripple in the output of the DC-DC converter.

Abstract translation: DC-DC转换器包括可变频率振荡器，控制系统和传动系。 DC-DC转换器非常适用于手机。 控制系统使用振荡器的输出来控制传动系。 振荡器根据伪随机数发生器改变其频率，从而减少由DC-DC转换器的输出中的纹波引起的电磁干扰。

公开(公告)号：US20040095275A1

公开(公告)日：2004-05-20

申请号：US10298447

申请日：2002-11-18

Applicant: RF MICRO DEVICES, INC.

Inventor： Andreas Warloe ,  Richard Keegan ,  Wayne Cox ,  Steve Colborne ,  Richard Najarian

IPC: G01S005/14

CPC classification number: G01S19/21 ,  G01S19/29 ,  G01S19/34 ,  H04B1/70752 ,  H04B1/708

Abstract: The correlation circuitry of the present invention operates in communication with a controller and transform circuitry to concurrently search a range of frequencies by correlating a received signal from the global positioning system (GPS) with a generated frequency and a generated code at a plurality of time offsets. The output of the correlation circuitry is provided to the transform circuitry, such as fast Fourier transform (FFT) circuitry, that transforms the output of the correlation circuitry. The results from the transformation circuitry are used by a GPS receiver to determine a frequency of the received GPS signal and a time offset associated with a ranging code carried in the received GPS signal.

公开(公告)号：US20030209730A1

公开(公告)日：2003-11-13

申请号：US10456320

申请日：2003-06-06

Applicant: RF MICRO DEVICES, INC.

Inventor： Joel Robert Gibson ,  Marnie Ann Knadler

IPC: H01L031/0336

CPC classification number: H01L24/49 ,  H01L23/49541 ,  H01L23/645 ,  H01L24/48 ,  H01L2223/6611 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/45014 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48253 ,  H01L2224/48257 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

Abstract: The present invention integrates an inductor into a semiconductor package by integrally forming inductive segments in the leadframe. The inductive segments may be connected directly to a lead of the leadframe, or indirectly to a lead or a bond pad on a semiconductor die via wirebonds to form an inductor. The inductance value for the resultant inductor is typically controlled by the point of contact for the wirebonds or the leads about the inductive segment. The inductance values may also be controlled by the shape and size of the inductive segments. The leadframe may be formed to support multiple inductive segments, and one or more configurations, including those using one or more die flags to support a like number of semiconductor die.

公开(公告)号：US10579580B2

公开(公告)日：2020-03-03

申请号：US14659292

申请日：2015-03-16

Applicant: RF Micro Devices, Inc.

Inventor： Christopher Truong Ngo ,  Alexander Wayne Hietala

IPC: G06F13/00 ,  G06F13/42 ,  G06F13/364 ,  G06F13/40 ,  G06F13/362

Abstract: The disclosure relates to bus interface systems. In one embodiment, the bus interface system includes a bus line along with a master bus controller and a slave bus controller coupled to the bus line. In order to start a data frame, the master bus controller is configured to generate a sequence of data pulses along the bus line such that the sequence of data pulses is provided in accordance to a start of sequence (SOS) pulse pattern. The slave bus controller is configured to recognize that the sequence of data transmitted along the bus line by the master bus controller has been provided in accordance with the SOS pulse pattern. In this manner, the slave bus controller can detect when the master bus controller has started a new data frame. As such, the exchange of information through data frames can be synchronized along the bus line with requiring an additional bus line for a clock signal.

公开(公告)号：US10382071B2

公开(公告)日：2019-08-13

申请号：US15094250

申请日：2016-04-08

Applicant: RF Micro Devices, Inc.

Inventor： Ashraf Rozek ,  Jason Yorks

IPC: H04B1/04 ,  H04L5/14 ,  H03F1/02 ,  G05F3/02 ,  H03F1/00 ,  H03F3/193 ,  H03G1/04 ,  H03H21/00

Abstract: Circuitry, which includes a PA power supply and RF PA circuitry, is disclosed. The RF PA circuitry includes a group of RF PAs and a group of PA decoupling circuits. The group of RF PAs includes a first RF PA and a second RF PA. The group of PA decoupling circuits includes a first PA decoupling circuit and a second PA decoupling circuit. The PA power supply provides a first PA power supply output signal to at least one of the group of RF PAs and to at least one of the group of PA decoupling circuits. The first PA decoupling circuit is coupled across the first RF PA, is programmable, and at least partially decouples the first RF PA from other circuitry. The second PA decoupling circuit is coupled across the second RF PA and at least partially decouples the second RF PA from other circuitry.

公开(公告)号：US10348269B2

公开(公告)日：2019-07-09

申请号：US14972929

申请日：2015-12-17

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H3/02 ,  H01L41/047 ,  H01L41/312 ,  H03H9/02 ,  H03H9/25 ,  H01L41/33

Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a piezoelectric layer including multiple thinned regions of different thicknesses each bounding in part a different recess, different groups of electrodes on or adjacent to different thinned regions and arranged for transduction of lateral acoustic waves of different wavelengths in the different thinned regions, and at least one bonded interface between the piezoelectric layer and a substrate. Optionally, a buffer layer may be intermediately bonded between the piezoelectric layer and the substrate. Methods of producing such devices include locally thinning a piezoelectric layer to define multiple recesses, bonding the piezoelectric layer on or over a substrate layer to cause the recesses to be bounded in part by either the substrate or an optional buffer layer, and defining multiple groups of electrodes on or over the different thinned regions.

公开(公告)号：US10326426B2

公开(公告)日：2019-06-18

申请号：US15087277

申请日：2016-03-31

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H9/25 ,  H03H9/02 ,  H03H3/08 ,  H03H3/007 ,  H03H3/02 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/00 ,  H03H9/15 ,  H03H9/05

Abstract: A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

公开(公告)号：US10298196B2

公开(公告)日：2019-05-21

申请号：US15141283

申请日：2016-04-28

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

IPC: H03H7/01 ,  H03H7/09

Abstract: Embodiments of radio frequency (RF) filtering circuitry are disclosed. In one embodiment, the RF filtering circuitry includes a first port, a second port, a first RF filter path, and a second RF filter path. The first RF filter path is connected between the first port and the second port and includes at least a pair of weakly coupled resonators. The weakly coupled resonators are configured such that a first transfer response between the first port and the second port defines a first passband. The second RF filter path is coupled to the first RF filter path and is configured such that the first transfer response between the first port and the second port defines a stopband adjacent to the first passband without substantially increasing ripple variation of the first passband defined by the first transfer response.