公开(公告)号：US12286446B2

公开(公告)日：2025-04-29

申请号：US16559056

申请日：2019-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwon Choi ,  Yongsuk Cho ,  Yoonhyun Kwak ,  Hyun Koo ,  Ohyun Kwon ,  Soyeon Kim ,  Sukekazu Aratani ,  Jiyoun Lee ,  Kyuhyun Im ,  Dmitry Kravchuk

IPC: C07F15/00 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/81 ,  H10K50/82 ,  H10K85/30 ,  H10K85/60

Abstract: An organometallic compound represented by Formula 1, an organic light-emitting device including the same, and a diagnostic composition including the organometallic compound: wherein, Formula 1, R1 to R12 and R21 to R23 are each independently the same as described in the detailed description of the specification.

公开(公告)号：US20250133970A1

公开(公告)日：2025-04-24

申请号：US18444206

申请日：2024-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minwoo CHOI ,  Hajun SUNG ,  Bonwon KOO ,  Kiyeon YANG ,  Changseung LEE

IPC: H10N70/00 ,  G11C13/00 ,  H10B63/00

Abstract: Provided are a chalcogenide-based memory device capable of implementing multi-level memory and an electronic apparatus including the chalcogenide-based memory device. The memory device includes a first electrode and a second electrode arranged to be spaced apart from each other, and a memory layer provided between the first electrode and the second electrode and including a plurality of memory material layers having different threshold voltages from each other. Each of the plurality of memory material layers includes a chalcogenide-based material, has an ovonic threshold switching (OTS) characteristic, and is configured to have a threshold voltage varying depending on a polarity and intensity of an applied voltage.

公开(公告)号：US20250133842A1

公开(公告)日：2025-04-24

申请号：US18754976

申请日：2024-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Wook LIM ,  Sung Hyuck CHO

IPC: H01L27/146

Abstract: An image sensor includes a pixel array including a plurality of unit pixels and a driving circuitry provided around the pixel array and driving the plurality of unit pixels. Each of the plurality of unit pixels includes a first region ad a second region. The first region includes a first photodiode, a first transfer transistor connected to the first photodiode, a first floating diffusion node connected to the first transfer transistor, and a (1-1)-th contact connected to a second floating diffusion node, and the second region includes a second photodiode, a second transfer transistor connected to the second photodiode, a (1-2)-th contact electrically connected to the (1-1)-th contact through connection metal wiring, and a second contact provided to a third floating diffusion node connected to the second transfer transistor.

公开(公告)号：US20250133841A1

公开(公告)日：2025-04-24

申请号：US18738595

申请日：2024-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MASATO FUJITA ,  Seungki Jung

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes: a substrate that includes a plurality of pixels, each of which includes a left sub-pixel and a right sub-pixel; a well region in the substrate on each of the plurality of pixels, the well region connecting the left sub-pixel and the right sub-pixel to each other; a pixel separation part that separates the plurality of pixels from each other and extends in the substrate between the left sub-pixel and the right sub-pixel; a left transfer transistor and a first logic transistor on the left sub-pixel; a right transfer transistor and a second logic transistor on the right sub-pixel; and a ground region in the substrate on one of the left sub-pixel and the right sub-pixel, and in contact with the well region. The ground region is adjacent to a corner of each of the plurality of pixels.

公开(公告)号：US20250133787A1

公开(公告)日：2025-04-24

申请号：US19005034

申请日：2024-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Hun PARK ,  Won Cheol JEONG ,  Jin Wook KIM ,  Deok Han BAE ,  Myung Yoon UM ,  In Yeal LEE ,  Yoon Young JUNG

IPC: H10D62/10 ,  H10D64/01

Abstract: A semiconductor device includes an active pattern extending in a first direction on a substrate, a gate structure on the active pattern and having a gate electrode extending in a second direction intersecting the active pattern, and a gate capping pattern on the gate electrode, the gate capping pattern including a gate capping liner defining a gate capping recess, the gate capping liner having a horizontal portion along an upper surface of the gate electrode, and a vertical portion extending from the horizontal portion in a third direction intersecting the first and second directions, and a gate capping filling film on the gate capping liner and filling the gate capping recess, an epitaxial pattern on the active pattern and adjacent the gate structure, a gate contact on and connected to the gate electrode, and an active contact on and connected to the epitaxial pattern.

公开(公告)号：US20250133738A1

公开(公告)日：2025-04-24

申请号：US18661467

申请日：2024-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chulmin Choi ,  Changhee Lee ,  Dajin Kim ,  Jiwoong Kim ,  Tae Hun Kim ,  Sang-Yong Park ,  Seung Jae Baik ,  Gun-Wook Yoon ,  Jaeduk Lee

IPC: H10B43/27 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device includes a gate stack with alternating conductive patterns and insulating patterns. The device also includes a first memory channel structure including a first channel layer enclosed by the gate stack and a first memory layer enclosing the first channel layer. The device also includes a source structure electrically connected to the first channel layer. The source structure includes several source layers stacked atop one another. The first channel layer is in physical contact with the second source layer but apart from the other source layers. The first source layer contains impurities of a first conductivity type. The second source layer is formed of an impurity-free material. The third source layer contains impurities of a second conductivity type different from the first conductivity type.

公开(公告)号：US20250133574A1

公开(公告)日：2025-04-24

申请号：US18912479

申请日：2024-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dalin Zhu ,  Emad Nader Farag ,  Eko Onggosanusi

IPC: H04W72/232 ,  H04L5/00

Abstract: Methods and apparatus for beam activation, indication, and application. A method includes receiving, in a TCI state activation/deactivation MAC CE command, L activated TCI codepoints and receiving a DCI with a TCI field having S TCI codepoints. Each of the L activated TCI codepoints is mapped to a first or second TCI state. The method further includes identifying, the L activated TCI codepoints that are mapped to the S TCI codepoints, applying the first TCI state and the second TCI state for transmission and reception, receiving, in a first DCI and a second DCI, a first indication of the first TCI state and a second indication of the first TCI state, respectively, and identifying, based on a time of reception of the first and second DCIs, the first or second indication of the first TCI state to use to update the first TCI state after a beam application time.

公开(公告)号：US20250133499A1

公开(公告)日：2025-04-24

申请号：US19007744

申请日：2025-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Vinay Kumar SHRIVASTAVA ,  Avijit MANNA ,  Kalyan DHULIPUDI ,  Ankit DHABRIYA ,  Ankit SRIVASTAV

IPC: H04W52/02 ,  H04W36/30 ,  H04W36/32

Abstract: The present subject matter describes performing radio resource management (RRM) measurements by a WTRU in a 3GPP networks. The method comprise defining at-least one of: a) a channel condition threshold, b) a WTRU mobility threshold, and c) a measurement-reliability threshold. A first sub-set of reference-signal samples are measured out of a set of reference-signal samples based on sensing at least one of current channel conditions and mobility-conditions. A reliability-parameter associated with the first sub-set of measured samples is checked. Finally, network-measurement operation is concluded in case of the reliability-parameter being in accordance with the pre-defined reliability-thresholds:

公开(公告)号：US20250133497A1

公开(公告)日：2025-04-24

申请号：US18917311

申请日：2024-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunghoon CHOI ,  Hyewon YANG ,  Jaewon LEE

IPC: H04W52/02 ,  H04W76/28

Abstract: The disclosure relates to a fifth generation (5G) or sixth generation (6G) communication system for supporting a higher data transmission rate. A method performed by a UE includes receiving, from a BS, configuration information associated with a WUS, monitoring the WUS based on the configuration information, in case that the WUS is received from the BS, determining whether the detected WUS triggers activation of an MR, and determining whether to transmit an uplink signal based on whether the detected WUS triggers the activation of the MR.

公开(公告)号：US20250133485A1

公开(公告)日：2025-04-24

申请号：US18924656

申请日：2024-10-23

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Jan KIENIG ,  Pawel SLOWIKOWSKI ,  Gracjan KWIATKOWSKI

IPC: H04W48/16 ,  H04W48/04

Abstract: A first network entity performing communication in a wireless communication system supporting a network slice, includes: memory storing instructions; and at least one processor, wherein the at least one processor is configured to execute the instructions to cause the first network entity to: receive, from a second network entity, a request to activate or deactivate a network slice instance (NSI) for a geographical coverage area; search for a list comprising at least one of: at least one network slice subnet instance (NSSI), or at least one network slice subnet management entity function (NSSMF); and send a request to a third network entity to activate or deactivate an NSSI, and wherein the at least one NSSI and the at least one NSSMF each support at least one of: the geographical coverage area, or an area code list mapped to the geographical coverage area.