Method of manufacturing an EEPROM device
    21.
    发明授权
    Method of manufacturing an EEPROM device 失效
    制造EEPROM器件的方法

    公开(公告)号:US06984590B2

    公开(公告)日:2006-01-10

    申请号:US10743483

    申请日:2003-12-22

    CPC classification number: H01L29/66825 H01L21/2652 H01L21/324

    Abstract: A method of manufacturing an EEPROM device is disclosed. An example method forms a screen oxide film on a semiconductor substrate, forms a first ion implantation mask defining a gate insulating film forming region on the screen oxide film, and performs a first ion implantation on the semiconductor substrate and the first ion implantation mask. The example method also performs a first annealing of the semiconductor substrate, removes the screen oxide film and the first ion implantation mask, and forms a gate oxide film on the semiconductor substrate. In addition, the example method forms a second ion implantation mask defining a gate insulating film forming region on the gate oxide film, performs a second ion implantation on the semiconductor substrate and the second ion implantation mask, performs a second annealing for the semiconductor substrate, removes the second ion implantation mask; and forms a tunnel oxide film on the gate oxide film.

    Abstract translation: 公开了一种制造EEPROM器件的方法。 示例性方法在半导体衬底上形成屏幕氧化膜,在屏幕氧化膜上形成限定栅极绝缘膜形成区域的第一离子注入掩模,并在半导体衬底和第一离子注入掩模上执行第一离子注入。 该示例方法还执行半导体衬底的第一退火,去除屏蔽氧化物膜和第一离子注入掩模,并在半导体衬底上形成栅极氧化膜。 此外,该示例性方法形成在栅极氧化膜上限定栅极绝缘膜形成区域的第二离子注入掩模,在半导体衬底和第二离子注入掩模上执行第二离子注入,对半导体衬底进行第二退火, 去除第二离子注入掩模; 并在栅极氧化膜上形成隧道氧化膜。

    Method for manufacturing mask ROM
    22.
    发明授权
    Method for manufacturing mask ROM 失效
    掩模ROM制造方法

    公开(公告)号:US06902979B2

    公开(公告)日:2005-06-07

    申请号:US10201860

    申请日:2002-07-24

    Applicant: Chang Hun Han

    Inventor: Chang Hun Han

    CPC classification number: H01L27/11253 H01L27/105 H01L27/11293

    Abstract: A method for manufacturing a mask ROM of flat cell structure. The method includes the steps of: providing a semiconductor substrate having a flat cell array region and a peripheral circuit region; forming a first and a second mask patterns exposing a substrate portions corresponding to a diffusion layer formation region of the flat cell array region and a device isolation layer of the peripheral circuit region; ion-implanting an impurity in the exposed substrate portions; forming a trench by etching the exposed substrate portion peripheral circuit region; forming a linear oxide layer on the first and the second mask patterns and the surface of the trench, a diffusion layer on the flat cell array region, and a barrier oxide layer on the surface of diffusion layer in accordance with a thermal oxidation process; depositing an oxide layer on the linear oxide layer to fill up the trench; polishing the oxide layer to expose the surface of the first and the second mask patterns; and forming a diffusion layer on the flat cell array region and a trench type isolation layer on the peripheral circuit region by removing the first and the second mask patterns.

    Abstract translation: 一种扁平单元结构的掩模ROM的制造方法。 该方法包括以下步骤:提供具有扁平单元阵列区域和外围电路区域的半导体衬底; 形成暴露与所述扁平单元阵列区域的扩散层形成区域对应的衬底部分和所述外围电路区域的器件隔离层的第一和第二掩模图案; 在暴露的衬底部分中离子注入杂质; 通过蚀刻暴露的基板部分外围电路区域形成沟槽; 在第一和第二掩模图案和沟槽的表面上形成线性氧化物层,在平坦单元阵列区域上形成扩散层,根据热氧化工艺在扩散层的表面上形成阻挡氧化物层; 在所述线性氧化物层上沉积氧化物层以填充所述沟槽; 抛光所述氧化物层以暴露所述第一和第二掩模图案的表面; 以及通过去除第一和第二掩模图案,在平坦单元阵列区域上形成扩散层和外围电路区域上的沟槽型隔离层。

    RESIN COMPOSITION FOR OPTICAL FILM, AND POLARIZER PROTECTIVE FILM AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME
    25.
    发明申请
    RESIN COMPOSITION FOR OPTICAL FILM, AND POLARIZER PROTECTIVE FILM AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME 有权
    用于光学膜的树脂组合物和包括其的极性保护膜和液晶显示器

    公开(公告)号:US20130190451A1

    公开(公告)日:2013-07-25

    申请号:US13355156

    申请日:2012-01-20

    CPC classification number: C08L33/08 Y10T428/10 C08L69/00

    Abstract: Provided are a resin composition including an acryl-based copolymer resin including an alkyl(meth)acrylate-based monomer and an imide-based monomer, additionally copolymerizable with a styrene-based monomer, and a polycarbonate-based resin having a melt index (MI) of 30 g/10 min or more under conditions of a load of 1.2 kg and a temperature of 300° C., a polarizer protective film including the resin composition, and a liquid crystal display including the polarizer protective film. The polarizer protective film according to the present invention has excellent heat resistance, transparency, and optical properties.

    Abstract translation: 本发明提供一种树脂组合物,其包括可与苯乙烯类单体共聚的(甲基)丙烯酸烷基酯单体和酰亚胺系单体的丙烯酸系共聚物树脂和熔融指数(MI)的聚碳酸酯类树脂 )在负载为1.2kg,温度为300℃的条件下为30g / 10分钟以上,含有该树脂组合物的偏振片保护膜,以及包含该偏振片保护膜的液晶显示装置。 根据本发明的偏振片保护膜具有优异的耐热性,透明性和光学性质。

    OPTICAL FILM AND METHOD OF MANUFACTURING THE SAME
    29.
    发明申请
    OPTICAL FILM AND METHOD OF MANUFACTURING THE SAME 审中-公开
    光学薄膜及其制造方法

    公开(公告)号:US20100202050A1

    公开(公告)日:2010-08-12

    申请号:US12678968

    申请日:2008-09-19

    CPC classification number: C08J5/18 C08J2333/12

    Abstract: The present invention provides an optical film that includes i) an acryl resin, and ii) 20 to 65 parts by weight of a core-shell type graft copolymer that includes a core having a rubber component and a shell including a polymer having a weight average molecular weight that is the same as or higher than a weight average molecular weight of a polymer constituting the i) acryl resin based on 100 parts by weight of the acryl resin, a retardation film, and an electronic device including the same.

    Abstract translation: 本发明提供一种光学膜,其包括i)丙烯酸树脂,和ii)20-65重量份的核 - 壳型接枝共聚物,其包括具有橡胶组分的芯和包含重均分子量的聚合物的壳 基于100重量份的丙烯酸树脂,相位差膜和包括其的电子器件,构成i)丙烯酸树脂的聚合物的重均分子量的分子量相同或更高。

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