Method for burn-in operation on a wafer of memory devices
    21.
    发明授权
    Method for burn-in operation on a wafer of memory devices 失效
    用于存储器件晶片上的老化操作的方法

    公开(公告)号:US5946248A

    公开(公告)日:1999-08-31

    申请号:US32401

    申请日:1998-02-27

    CPC classification number: G11C29/50 G01R31/2856 G11C11/401

    Abstract: A method is provided for use on a wafer formed with a plurality of dice on each of which a memory device, such as a DRAM (dynamic random access memory) device to perform a burn-in operation on the memory device so as to test the reliability thereof. By this method, a plurality of pads are formed in the scribe lines that are used as reference marks in the cutting apart of the dice. These pads are used to transfer an externally generated burn-in enable signal and a DC bias voltage to each memory device. Since the pads for burn-in wiring are formed in the scribe lines, they will not take additional space on the dice where each memory device is formed. The burn-in operation is more convenient, quick, and cost-effective to implement.

    Abstract translation: 提供一种在形成有多个骰子的晶片上使用的方法,每个骰子上具有诸如DRAM(动态随机存取存储器)设备的存储器件,以在存储器件上执行老化操作,以便测试 可靠性。 通过这种方法,在切割线中用作参考标记的划线中形成多个焊盘。 这些焊盘用于将外部产生的老化使能信号和直流偏置电压传送到每个存储器件。 由于用于老化线的焊盘形成在划线中,所以它们在形成每个存储器件的骰子上不会占用额外的空间。 老化操作更加方便,快捷,性价比高。

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