Abstract:
A transistor structure with improved device performance, and a method for forming the same is provided. The transistor structure is an SOI (silicon-on-insulator) transistor. In one embodiment, a silicon layer over the oxide layer is a relatively uniform film and in another embodiment, the silicon layer over the oxide layer is a silicon fin. The transistor devices include source/drain structures formed of a strain material that extends through the silicon layer, through the oxide layer and into the underlying substrate which may be silicon. The source/drain structures also include portions that extend above the upper surface of the silicon layer thereby providing an increased volume of the strain layer to provide added carrier mobility and higher performance.
Abstract:
An electronic device includes a display module, a base and a keyboard module. The display module is pivoted on the base. The keyboard module is disposed on the base. The keyboard module has a plurality of keys. Each of the keys includes a main body and an imprinted structure. The main body has a top surface. The imprinted structure is disposed on the top surface of the main body and includes a light guiding portion and a light scattering portion. A light emitted by the display module illuminates the keyboard module. The light is guided towards a specific direction when the light passes through the light guiding portion, and the light is scattered in other directions when the light passes through the light scattering portion.
Abstract:
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a semiconductor substrate and forming a gate trench therein. The method also includes filling in the gate trench partially with a work-function (WF) metal stack, and filling in the remaining gate trench with a dummy-filling-material (DFM) over the WF metal stack. A sub-gate trench is formed by etching-back the WF metal stack in the gate trench, and is filled with an insulator cap to form an isolation region in the gate trench. The DFM is fully removed to from a MG-center trench (MGCT) in the gate trench, which is filled with a fill metal.
Abstract:
An advertising system is disclosed. In one embodiment, the system includes an advertising display configured to provide an advertisement to potential customers and a camera configured to capture images of the potential customers when the potential customers pass the advertising display. The system may also include an image processing system having a processor and a memory. The memory may include application instructions for execution by the processor, and the image processing system may be configured to execute the application instructions to derive usage characteristics of the potential customers with respect to the advertising display through analysis of the captured images. Additional methods, systems, and articles of manufacture are also disclosed.
Abstract:
A method of operating a voltage regulator circuit includes generating a control signal by an amplifier of the voltage regulator circuit. The control signal is generated based on a reference signal at an inverting input of the amplifier and a feedback signal at a non-inverting input of the amplifier. A driving current flowing toward an output node of the voltage regulator circuit is generated by a driver responsive to the control signal, and the driver is coupled between a first power node and the output node. The feedback signal is generated responsive to a voltage level at the output node. A transistor, coupled between the output node and a second power node, is caused to operate in saturation mode during a period while the voltage regulator circuit is operating.
Abstract:
A dicing process is provided for cutting a wafer along a plurality of predetermined scribe lines into a plurality of dies that are releasably adhered to a release film. The dicing process includes: (a) disposing a wafer-breaking carrier on a supporting device, the wafer-breaking carrier having a chipping unit; (b) disposing the wafer above the supporting device such that the chipping unit is at a position corresponding to the scribe lines; and (c) adhering a release surface of the release film to the wafer by applying a force to the release film to contact the chipping unit of the wafer-breaking carrier with the wafer, such that the wafer is split along the scribe lines into the dies.
Abstract:
In order to measure the performance of a DOCSIS upstream channel as well as to locate impairments, a special test signal is transmitted in a time slot of the upstream channel by a test instrument positioned anywhere within the CATV plant. A second test instrument, located at the termination point of the upstream plant, then detects, recovers, and processes the test signal in order to complete the measurement. The typical methods used to detect and recover bursted signals within a DOCSIS upstream channel use precise timing information transmitted in a corresponding DOCSIS downstream channel. Unfortunately, the downstream channel and thus the precise timing information are not always available to the secondary test instrument. The present invention also describes an apparatus and method for detecting a bursted test signal without the use of the DOCSIS upstream channel timing.