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公开(公告)号：US07910941B2
公开(公告)日：2011-03-22
申请号：US12057887
申请日：2008-03-28
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/22 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译： 发光二极管（LED）装置包括外延多层，微/纳粗糙层和抗反射层。 外延层多层具有第一半导体层，有源层和第二半导体层。 微/纳米坚固层设置在外延多层的第一半导体层上。 防反射层设置在微/纳米坚固层上。 此外，还公开了一种LED装置的制造方法。
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公开(公告)号：US07816703B2
公开(公告)日：2010-10-19
申请号：US12269407
申请日：2008-11-12
CPC分类号： H01L33/14 , H01L33/10 , H01L33/382
摘要： A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
摘要翻译： 发光二极管器件包括外延层，电流阻挡层和电流扩散层。 电流阻挡层设置在外延层的一侧上并与外延层的一部分接触。 电流扩散层设置在外延层的一侧并与电流阻挡层的至少一部分接触。
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公开(公告)号：US20090050909A1
公开(公告)日：2009-02-26
申请号：US12178975
申请日：2008-07-24
摘要： A light-emitting diode (LED) apparatus includes an epitaxial layer and an etching mask layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The etching mask layer is disposed on the epitaxial layer and has a plurality of hollows. The second semiconductor layer includes a roughing structure.
摘要翻译： 发光二极管（LED）装置包括外延层和蚀刻掩模层。 该外延层依次具有第一半导体层，有源层和第二半导体层。 蚀刻掩模层设置在外延层上并具有多个中空部。 第二半导体层包括粗加工结构。
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公开(公告)号：US20090014747A1
公开(公告)日：2009-01-15
申请号：US12143486
申请日：2008-06-20
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/64 , H01L33/641
摘要： A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.
摘要翻译： 发光二极管（LED）装置的制造方法包括以下步骤：在LED装置上形成由可固化材料制成的至少一个暂时基板; 以及在所述LED器件上形成至少一个导热衬底。 制造方法不需要通过使用粘合层将半导体结构粘合到另一基板上的步骤，并且可以在去除临时基板之后使装置顺序分离，从而获得多个LED装置。 结果，可以防止由于切割过程导致的电流泄漏的问题，从而降低生产成本并提高产量。
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公开(公告)号：US20080142824A1
公开(公告)日：2008-06-19
申请号：US11941799
申请日：2007-11-16
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L33/42 , H01L2933/0016
摘要： An electroluminescent device includes a substrate, a reflection layer, a patterned transparent conductive layer, at least one LED element, a first contact electrode and a second contact electrode. The reflection layer is formed on the substrate. The patterned transparent conductive layer is disposed on the reflection layer. The LED element is formed on the patterned transparent conductive layer and includes a first semiconductor layer, an electroluminescent layer and a second semiconductor layer. The second semiconductor layer is disposed on the patterned transparent conductive layer and the reflection layer. The first contact electrode is electrically connected to the first semiconductor layer. The second contact electrode is electrically connected to the second semiconductor layer.
摘要翻译： 电致发光器件包括衬底，反射层，图案化透明导电层，至少一个LED元件，第一接触电极和第二接触电极。 反射层形成在基板上。 图案化的透明导电层设置在反射层上。 LED元件形成在图案化的透明导电层上，并且包括第一半导体层，电致发光层和第二半导体层。 第二半导体层设置在图案化的透明导电层和反射层上。 第一接触电极电连接到第一半导体层。 第二接触电极与第二半导体层电连接。
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公开(公告)号：US20130314931A1
公开(公告)日：2013-11-28
申请号：US13604021
申请日：2012-09-05
申请人： Li-Fan LIN , Ching-Chuan SHIUE , Wen-Chia LIAO , Shih-Peng CHEN
发明人： Li-Fan LIN , Ching-Chuan SHIUE , Wen-Chia LIAO , Shih-Peng CHEN
CPC分类号： H01L25/0753 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/19107 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.
摘要翻译： 发光半导体元件至少包括两个导电单元，至少一个发光半导体管芯和透光层。 凹槽位于两个导电单元之间。 发光半导体管芯横跨导电单元。 透光层覆盖发光半导体，并部分地填充在沟槽内，用于连接导电单元。
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公开(公告)号：US20120012882A1
公开(公告)日：2012-01-19
申请号：US13243952
申请日：2011-09-23
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/60 , H01L33/641
摘要： A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.
摘要翻译： 发光二极管（LED）装置包括堆叠的外延结构，导热板和种子层。 堆叠的外延结构依次包括第一半导体层（N-GaN），发光层和第二半导体层（P-GaN）。 导热板设置在第一半导体层上，种子层设置在第一半导体层和导热板之间。 另外，本发明还公开了一种制造方法，其特征在于，包括以下步骤：在LED装置上形成至少一个由可固化聚合物材料制成的临时衬底，并且至少在所述LED器件上形成导热板。
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公开(公告)号：US07999450B2
公开(公告)日：2011-08-16
申请号：US11944309
申请日：2007-11-21
CPC分类号： H01L33/64 , F21V29/70 , F21Y2115/10 , H01L33/46 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/0002 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： An electroluminescent module includes a module substrate, a thermal-conducting carrier substrate and a light-emitting element. The module substrate has an opening, a first surface and a first patterned electrode disposed on the first surface. The thermal-conducting carrier substrate has a carrying element and a second patterned electrode disposed on the carrying element. The carrying element is disposed opposite to the first surface of the module substrate, and the second patterned electrode is disposed facing to the first patterned electrode and electrically connected to the first patterned electrode. The light-emitting element is located at the opening and disposed on the thermal-conducting carrier substrate. The light-emitting element has a first electrode and a second electrode, both of which are respectively electrically connected to the corresponding portions of the second patterned electrode of the thermal-conducting carrier substrate.
摘要翻译： 电致发光模块包括模块衬底，导热载体衬底和发光元件。 模块基板具有设置在第一表面上的开口，第一表面和第一图案化电极。 导热载体衬底具有承载元件和设置在承载元件上的第二图案化电极。 承载元件与模块基板的第一表面相对设置，并且第二图案化电极被设置为面对第一图案化电极并电连接到第一图案化电极。 发光元件位于开口处并设置在导热载体基板上。 发光元件具有第一电极和第二电极，它们都分别电连接到导热载体衬底的第二图案化电极的对应部分。
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公开(公告)号：US07867795B2
公开(公告)日：2011-01-11
申请号：US12143486
申请日：2008-06-20
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/64 , H01L33/641
摘要： A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.
摘要翻译： 发光二极管（LED）装置的制造方法包括以下步骤：在LED装置上形成由可固化材料制成的至少一个暂时基板; 以及在所述LED器件上形成至少一个导热衬底。 制造方法不需要通过使用粘合层将半导体结构粘合到另一基板上的步骤，并且可以在去除临时基板之后使装置顺序分离，从而获得多个LED装置。 结果，可以防止由于切割过程导致的电流泄漏的问题，从而降低生产成本并提高产量。
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公开(公告)号：US20090294790A1
公开(公告)日：2009-12-03
申请号：US12473072
申请日：2009-05-27
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2933/0091
摘要： An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.
摘要翻译： 电致发光器件包括导电衬底，反射层，图案化透明导电层，至少一个发光二极管（LED）元件，第一接触电极和第二接触电极。 反射层设置在导电基板上，图案化的透明导电层形成在反射层上。 LED元件形成在图案化的透明导电层上，LED元件依次包括第一半导体层，发光层和第二半导体层。 第二半导体层设置在图案化的透明导电层和反射层上。 第一接触电极设置在第一半导体层的一侧，第二接触电极设置在导电基板的一侧。
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