公开(公告)号：US20130119371A1

公开(公告)日：2013-05-16

申请号：US13444860

申请日：2012-04-12

Applicant: Hao-Lin Chiu ,  Chi-Jui Lin ,  Shu-Wei Tsao ,  Chun-Nan Lin ,  Po-Liang Yeh ,  Shine-Kai Tseng

Inventor： Hao-Lin Chiu ,  Chi-Jui Lin ,  Shu-Wei Tsao ,  Chun-Nan Lin ,  Po-Liang Yeh ,  Shine-Kai Tseng

IPC: H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/42384 ,  H01L29/7869

Abstract: An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.

Abstract translation: 提供了包括源极，漏极，氧化物半导体层，栅极和栅极绝缘体层的有源器件。 源极包括彼此平行的第一条纹电极和与其连接的第一连接电极。 漏极包括彼此平行的第二条状电极和与其连接的第二连接电极，其中第一条形电极和第二条状电极彼此平行，电隔离并交替布置，并且之间形成之字形沟槽。 门沿着之字形沟槽延伸。 氧化物半导体层与源极和漏极接触，其中氧化物半导体层和每个第一条带电极之间的接触面积基本上等于每个第一条带电极的布局面积，并且每个第二条带电极之间的接触面积基本上等于 每个第二条纹电极的布局区域。

公开(公告)号：US08329940B2

公开(公告)日：2012-12-11

申请号：US12649437

申请日：2009-12-30

Applicant: Chun-Nan Lin ,  Dravidum Maitraie ,  Jih-Pyang Wang ,  Chi-Feng Hung ,  Huang-Yao Tu ,  Ya-Ting Liou ,  Bai-Luh Wei ,  Shyh-Chyun Yang

Inventor： Chun-Nan Lin ,  Dravidum Maitraie ,  Jih-Pyang Wang ,  Chi-Feng Hung ,  Huang-Yao Tu ,  Ya-Ting Liou ,  Bai-Luh Wei ,  Shyh-Chyun Yang

IPC: C07C61/12 ,  C07C69/74 ,  C07D313/06

CPC classification number: C07D313/06 ,  A61K31/19 ,  A61K31/215 ,  A61K31/335 ,  C07C231/02 ,  C07C231/12 ,  C07D313/08 ,  C07J63/008 ,  C07J73/003

Abstract: The present invention provides a chemical compound having the structure being one selected from a group consisting of wherein R1 is one selected from a group consisting of COOCH3, COOCH2Ph, CONHCH(CH3)2 and CONHC6H5, R2 is one selected from a group consisting of H, CH3 and CH(CH3)2, R3 is one selected from a group consisting of H, CH3, CH(CH3)2 and CH2Ph, and R4 is one of CH(CH3)2 and C6H5.

Abstract translation: 本发明提供一种具有以下结构的化合物：其中R 1为选自COOCH 3，COOCH 2 Ph，CONHCH（CH 3）2和CONHC 6 H 5中的一个，R 2为选自H ，CH 3和CH（CH 3）2，R 3是选自H，CH 3，CH（CH 3）2和CH 2 Ph的一个，R 4是CH（CH 3）2和C 6 H 5之一。

公开(公告)号：US08270178B2

公开(公告)日：2012-09-18

申请号：US12822201

申请日：2010-06-24

Applicant: Po-Lin Chen ,  Chih-Yuan Lin ,  Yu-Min Lin ,  Chun-Nan Lin

Inventor： Po-Lin Chen ,  Chih-Yuan Lin ,  Yu-Min Lin ,  Chun-Nan Lin

IPC: H05K7/00 ,  H01L27/14 ,  H01L23/48

CPC classification number: C23C14/165 ,  C23C14/3492 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

Abstract: An active device array substrate has at least one patterned conductive layer. The patterned conductive layer includes a copper layer. A cross-section of the copper layer which is parallel to a normal line direction of the copper layer includes a first trapezoid and a second trapezoid stacked on the first trapezoid. A base angle of the first trapezoid and a base angle of the second trapezoid are acute angles, and a difference between the base angle of the first trapezoid and the base angle of the second trapezoid is from about 5° to about 30°.

Abstract translation: 有源器件阵列衬底具有至少一个图案化导电层。 图案化导电层包括铜层。 铜层的与铜层的法线平行的截面包括层叠在第一梯形上的第一梯形和第二梯形。 第一梯形的底角和第二梯形的底角是锐角，第一梯形的底角与第二梯形的底角之间的差为约5°至约30°。

公开(公告)号：US20110228502A1

公开(公告)日：2011-09-22

申请号：US12822201

申请日：2010-06-24

Applicant: Po-Lin Chen ,  Chih-Yuan Lin ,  Yu-Min Lin ,  Chun-Nan Lin

Inventor： Po-Lin Chen ,  Chih-Yuan Lin ,  Yu-Min Lin ,  Chun-Nan Lin

IPC: H05K7/00 ,  B05D5/12 ,  C23C14/34 ,  H05K1/09

CPC classification number: C23C14/165 ,  C23C14/3492 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

Abstract: An active device array substrate has at least one patterned conductive layer. The patterned conductive layer includes a copper layer. A cross-section of the copper layer which is parallel to a normal line direction of the copper layer includes a first trapezoid and a second trapezoid stacked on the first trapezoid. A base angle of the first trapezoid and a base angle of the second trapezoid are acute angles, and a difference between the base angle of the first trapezoid and the base angle of the second trapezoid is from about 5° to about 30°.

Abstract translation: 有源器件阵列衬底具有至少一个图案化导电层。 图案化导电层包括铜层。 铜层的与铜层的法线平行的截面包括层叠在第一梯形上的第一梯形和第二梯形。 第一梯形的底角和第二梯形的底角是锐角，第一梯形的底角与第二梯形的底角之间的差为约5°至约30°。

公开(公告)号：US20110190388A1

公开(公告)日：2011-08-04

申请号：US12782395

申请日：2010-05-18

Applicant: Chun-Nan Lin ,  Huang-Yao Tu ,  A-Mei Huang ,  Bai-Luh Wei ,  Kim-Hong Gan ,  Tzyh-Chyuan Hour ,  Shyh-Chyun Yang ,  Yeong-Shiau Pu ,  Shen-Jeu Won

Inventor： Chun-Nan Lin ,  Huang-Yao Tu ,  A-Mei Huang ,  Bai-Luh Wei ,  Kim-Hong Gan ,  Tzyh-Chyuan Hour ,  Shyh-Chyun Yang ,  Yeong-Shiau Pu ,  Shen-Jeu Won

IPC: A61K31/365 ,  C07C61/29 ,  A61K31/19 ,  A61P35/00 ,  A61P29/00 ,  C07C69/757 ,  A61K31/215 ,  C07C69/145 ,  C07C69/533 ,  C07C69/34 ,  C07D313/08 ,  C12N5/02

CPC classification number: A61K31/56 ,  A61K31/19 ,  A61K31/215 ,  A61K31/365 ,  A61K31/58 ,  A61K31/585 ,  C07C61/29 ,  C07C69/145 ,  C07C69/34 ,  C07C69/533 ,  C07C69/757 ,  C07D313/08

Abstract: Several ursolic acid derivatives and pharmaceutical compositions thereof are provided. The ursolic acid derivatives and the pharmaceutical compositions thereof have at least one of an anticancer and an anti-inflammatory effects. A method for increasing a reactive oxygen species in a cell is also provided. The method comprises a step of providing the cell with a pharmaceutical composition including an ursolic acid derivative.

Abstract translation: 提供了几种熊果酸衍生物及其药物组合物。 熊果酸衍生物及其药物组合物具有抗癌和抗炎作用中的至少一种。 还提供了增加电池中活性氧的方法。 该方法包括向细胞提供包含熊果酸衍生物的药物组合物的步骤。

公开(公告)号：US20110147733A1

公开(公告)日：2011-06-23

申请号：US12776484

申请日：2010-05-10

Applicant: Yih-Chyun KAO ,  Chun-Nan Lin ,  Li-Kai Chen ,  Wen-Ching Tsai

Inventor： Yih-Chyun KAO ,  Chun-Nan Lin ,  Li-Kai Chen ,  Wen-Ching Tsai

IPC: H01L29/786 ,  H01L29/12 ,  H01L21/34

CPC classification number: H01L29/7869

Abstract: A semiconductor device structure on a substrate and a manufacture method thereof is provided. The semiconductor device structure includes an oxide semiconductor transistor and a passivation layer containing free hydrogen. The semiconductor device structure is formed by following steps. A gate electrode is formed on the substrate. A gate dielectric layer covers the gate electrode. A source electrode is formed on the gate dielectric layer. A drain electrode is formed on the gate dielectric layer and separated from the source electrode and thereby forming a channel distance. An oxide semiconductor layer is formed on the gate dielectric layer, the source electrode and the drain electrode and between the source electrode and the drain electrode. The oxide semiconductor layer is further electrically connected with the source electrode and the drain electrode. A passivation layer covers the oxide semiconductor layer, the source electrode and the drain electrode. The passivation layer has a groove formed therein, and the groove surrounds the oxide semiconductor layer.

Abstract translation: 提供了一种基板上的半导体器件结构及其制造方法。 半导体器件结构包括氧化物半导体晶体管和含有游离氢的钝化层。 半导体器件结构通过以下步骤形成。 在基板上形成栅电极。 栅介质层覆盖栅电极。 源极电极形成在栅极电介质层上。 在栅极电介质层上形成漏电极，与源电极分离，形成通道距离。 在栅极电介质层，源电极和漏电极以及源电极和漏电极之间形成氧化物半导体层。 氧化物半导体层进一步与源电极和漏电极电连接。 钝化层覆盖氧化物半导体层，源电极和漏电极。 钝化层在其中形成有凹槽，并且沟槽围绕氧化物半导体层。

公开(公告)号：US20110014788A1

公开(公告)日：2011-01-20

申请号：US12855837

申请日：2010-08-13

Applicant: Chun-Nan Lin ,  Kuo-Yuan Tu ,  Shu-Feng Wu ,  Wen-Ching Tsai

Inventor： Chun-Nan Lin ,  Kuo-Yuan Tu ,  Shu-Feng Wu ,  Wen-Ching Tsai

IPC: H01L21/3213

CPC classification number: H01L29/4908 ,  H01L29/458 ,  H01L29/66757 ,  H01L29/66765

Abstract: A display panel structure having a circuit element disposed thereon and method of manufacture are provided. The display panel includes a substrate and the circuit element disposed on the substrate. The circuit element has a first interface layer and a first conductive layer. Both the first interface layer and the first conductive layer have cooper materials. The material which makes the first interface layer includes a reactant or a compound of the material which makes the first conductive layer. The method for manufacturing includes the following steps: forming a first interface layer on the substrate; forming a first conductive layer on the first interface layer; and etching the first conductive and interface layers to form a pattern. The existence of the first interface reduces the penetration of the first conductive layer on the substrate and improves the adhesive force between the first conductive layer and the substrate.

公开(公告)号：US07043597B2

公开(公告)日：2006-05-09

申请号：US10605030

申请日：2003-09-03

Applicant: Yung-Chun Lei ,  Chun-Nan Lin

Inventor： Yung-Chun Lei ,  Chun-Nan Lin

IPC: G06F12/00

CPC classification number: G06F8/65

Abstract: The processing system is electrically connected to a computer and has a non-volatile memory (NVM) for storing firmware and an NVM control interface having a plurality of registers for updating and reading data stored in the NVM. When the NVM control interface updates a current piece of data stored in the NVM, the NVM control interface first reads a prior piece of data that is stored in the NVM prior to the current piece of data and transmits the prior piece of data to the computer for comparison, then the NVM control interface updates the current piece of data.

Abstract translation: 处理系统电连接到计算机，并具有用于存储固件的非易失性存储器（NVM）和具有用于更新和读取存储在NVM中的数据的多个寄存器的NVM控制接口。 当NVM控制接口更新存储在NVM中的当前数据时，NVM控制接口首先在当前数据之前读取存储在NVM中的先前数据，并将先前的数据发送到计算机 为了进行比较，NVM控制界面更新了当前的数据。

公开(公告)号：US06784985B2

公开(公告)日：2004-08-31

申请号：US10339033

申请日：2003-01-08

Applicant: Tung-Lung Lin ,  Hsing-Hua Liu ,  Chun-Nan Lin

Inventor： Tung-Lung Lin ,  Hsing-Hua Liu ,  Chun-Nan Lin

IPC: G01C100

CPC classification number: G11B7/22 ,  G01B11/26 ,  G01J1/4257 ,  G11B7/123

Abstract: A three-dimensional laser beam detection device. The three-dimensional laser beam detection device has a portion fixed to a laser source such as an optical head, an adjusting device provided on the fixed portion, and a laser beam detection portion coupled to the adjusting device. The adjusting device has a first table movably coupled to the fixed portion in a first direction, and a first adjusting portion coupled to the first table for moving the first table relatively to the fixed portion in the first direction. The first adjusting portion is formed within the adjusting device. The laser beam detection portion has a detector to detect the laser beam radiating from the laser source. The fixed portion has a fixed relative position to the laser source, and the detector is adjustable in relation to the laser source by performing adjustment with the adjusting device.

Abstract translation: 三维激光束检测装置。 三维激光束检测装置具有固定到诸如光学头的激光源的部分，设置在固定部分上的调节装置和耦合到调节装置的激光束检测部分。 调节装置具有在第一方向上可移动地联接到固定部分的第一工作台和联接到第一工作台的第一调节部分，用于在第一方向上相对于固定部分移动第一工作台。 第一调节部分形成在调节装置内。 激光束检测部分具有检测器，用于检测从激光源辐射的激光束。 固定部分具有与激光源相对的固定相对位置，并且通过利用调节装置进行调节，检测器可相对于激光源调节。

公开(公告)号：US06766213B2

公开(公告)日：2004-07-20

申请号：US10249586

申请日：2003-04-22

Applicant: Chun-Nan Lin ,  Ming-Yu Liu

Inventor： Chun-Nan Lin ,  Ming-Yu Liu

IPC: G06F1900

CPC classification number: G05B19/41875 ,  G01R31/31707 ,  G05B2219/31316 ,  G05B2219/32207 ,  G05B2219/33209 ,  G05B2219/36542 ,  G05B2219/45031 ,  Y02P90/18 ,  Y02P90/22

Abstract: A semiconductor automation system for a daily check is provided. The semiconductor automation system includes a database for storing testing items, testing specifications, and testing frequencies for each semiconductor equipment; a processor for selecting a corresponding testing specification from the database to perform real time calculation on newly added testing data, thus getting a testing result; and a message server for alarming engineers associated with the daily check when the testing result is abnormal.

Abstract translation: 提供了用于日常检查的半导体自动化系统。 半导体自动化系统包括用于存储每个半导体设备的测试项目，测试规范和测试频率的数据库; 处理器，用于从数据库中选择相应的测试规范，对新添加的测试数据进行实时计算，从而获得测试结果; 以及当测试结果异常时，与日常检查相关的报警工程师的消息服务器。