公开(公告)号：US20100149293A1

公开(公告)日：2010-06-17

申请号：US12636109

申请日：2009-12-11

申请人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue ,  Ken Tsuchii

发明人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue ,  Ken Tsuchii

IPC分类号： B41J2/175

CPC分类号： B41J2/17563 ,  B41J2/1404 ,  B41J2/1433 ,  B41J2002/14475

摘要： A liquid ejection head includes ejection orifices allowing liquid to be ejected therethrough, passages communicating with the ejection orifices and the pressure chambers each accommodating an energy generating element generating energy for ejecting the liquid therein, a supply port supplying the liquid to the passages, and a filter including substantially cylindrical members between the supply port and passages and having openings. Each of the ejection orifices has a substantially circular cross section having larger and smaller diameters substantially perpendicularly to its liquid ejecting direction. Each of the openings has a substantially rectangular cross section having longer and shorter sides substantially perpendicularly to its liquid supplying direction. The relationships D1>L1, D1 L2≧D1 are satisfied where D1 is the smaller diameter, D2 is the larger diameter, L1 is the shorter side, and L2 is the longer side.

摘要翻译： 液体喷射头包括允许液体喷射通过的喷射孔，与喷射孔连通的通道和每个容纳能量产生元件的压力室，所述能量产生元件产生用于在其中喷射液体的能量产生元件，将液体供应到通道，以及 过滤器包括在供给口和通道之间并具有开口的基本上圆柱形的构件。 每个喷射孔具有基本上圆形的横截面，其具有大致垂直于其液体喷射方向的更大和更小的直径。 每个开口具有基本上矩形的横截面，其具有基本垂直于其液体供应方向的较短和短边。 满足关系D1> L1，D1 L2≥D1，其中D1是较小的直径，D2是较大的直径，L1是较短的一侧，L2是较长的一侧。

公开(公告)号：US20060075972A1

公开(公告)日：2006-04-13

申请号：US11258670

申请日：2005-10-25

申请人： Seiyo Nakashima ,  Michiko Nishiwaki ,  Yukinori Aburatani ,  Satoshi Okada ,  Eisuke Nishitani ,  Kazuhiro Nakagomi ,  Kazuhito Ikeda ,  Kazuhiro Shimeno ,  Gakuji Ohta ,  Katsuhisa Kasanami

发明人： Seiyo Nakashima ,  Michiko Nishiwaki ,  Yukinori Aburatani ,  Satoshi Okada ,  Eisuke Nishitani ,  Kazuhiro Nakagomi ,  Kazuhito Ikeda ,  Kazuhiro Shimeno ,  Gakuji Ohta ,  Katsuhisa Kasanami

IPC分类号： C23C16/00

CPC分类号： H01L21/68721 ,  C23C16/4584 ,  C23C16/46 ,  H01J2237/2005 ,  H01J2237/32 ,  H01L21/67109 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

摘要： A substrate processing apparatus comprises a processing chamber; a susceptor on which a substrate to be processed is to be placed; and a heating unit disposed below the susceptor for heating the substrate to be processed placed on the susceptor. The susceptor and the heating unit are accommodated in the processing chamber, and in a state in which the susceptor and the heating unit are relatively rotated, the substrate to be processed is processed. At least the susceptor is lifted and lowered in the processing chamber, and a substrate to be processed lifting and lowering apparatus for lifting and lowering the substrate to be processed with respect to at least a portion of the susceptor is disposed in the processing chamber.

公开(公告)号：US06483989B1

公开(公告)日：2002-11-19

申请号：US10035809

申请日：2001-11-08

申请人： Satoshi Okada ,  Michiko Nishiwaki ,  Katsuhisa Kasanami ,  Eisuke Nishitani

发明人： Satoshi Okada ,  Michiko Nishiwaki ,  Katsuhisa Kasanami ,  Eisuke Nishitani

IPC分类号： F26B330

CPC分类号： H01L21/67109

摘要： A substrate processing apparatus is disclosed for heating a substrate by a heater through a susceptor in a state in which the substrate is placed on the susceptor, to process the substrate. The heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, a center position of a gap of the gaps which is positioned closer to an end of the substrate than any other gap is located in a range from an inner side 10 mm to an outer side 6 mm in a radial direction of the substrate with respect to the end of the substrate.

公开(公告)号：US4979466A

公开(公告)日：1990-12-25

申请号：US320600

申请日：1989-03-08

申请人： Eisuke Nishitani ,  Tsuzuku ,  Mitsuo Nakatani ,  Masaaki Maehara ,  Mitsuaki Horiuchi ,  Koichiro Mizukami

发明人： Eisuke Nishitani ,  Tsuzuku ,  Mitsuo Nakatani ,  Masaaki Maehara ,  Mitsuaki Horiuchi ,  Koichiro Mizukami

IPC分类号： H01L21/285 ,  C23C14/24 ,  C23C16/04 ,  C23C16/06 ,  C23C16/08

CPC分类号： C23C16/04

摘要： An apparatus for depositing metal thin film on predetermined portions of an underlayer of a substrate by a chemical deposition method with good selectivity, good reproducibility and high deposition rate. Hydrogen atoms are prevented from adhering to portions of the substrate not to be deposited with a metal using a light source for heating only the substrate while cooling other portions exposed to starting material gases or a special gas flow controlling plate or shading plate.

公开(公告)号：US08833909B2

公开(公告)日：2014-09-16

申请号：US13559871

申请日：2012-07-27

申请人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue

发明人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue

IPC分类号： B41J2/05 ,  B41J2/14

CPC分类号： B41J2/1404 ,  B41J2002/14169 ,  B41J2002/14177 ,  B41J2202/11

摘要： A liquid ejection head including: includes an ejection orifice for ejecting liquid, a pressure chamber communicating with the ejection orifice, a flow path for supplying the liquid to the pressure chamber, and a first heat-generating element and a second heat-generating element for generating energy to be used for ejecting the liquid. The first heat-generating element is arranged in the pressure chamber before the second heat-generating element with respect to a supply direction of the liquid from the flow path to the pressure chamber. A portion between the first heat-generating element and the second heat-generating element is located within a projection of an opening of the ejection orifice, when viewed from a direction in which the liquid is ejected from the ejection orifice.

摘要翻译： 一种液体喷射头，包括：包括用于喷射液体的喷射孔，与喷射孔连通的压力室，用于将液体供应到压力室的流路，以及第一发热元件和第二发热元件， 产生用于喷射液体的能量。 第一发热元件相对于液体从流路到压力室的供给方向设置在第二发热元件之前的压力室中。 当从喷射口喷射液体的方向观察时，第一发热元件和第二发热元件之间的部分位于喷射孔的开口的突出部内。

公开(公告)号：US20130050349A1

公开(公告)日：2013-02-28

申请号：US13559871

申请日：2012-07-27

申请人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue

发明人： Eisuke Nishitani ,  Toru Yamane ,  Tomoyuki Inoue

IPC分类号： B41J2/05

CPC分类号： B41J2/1404 ,  B41J2002/14169 ,  B41J2002/14177 ,  B41J2202/11

摘要： Provided is a liquid ejection head, including: an ejection orifice for ejecting liquid; a pressure chamber communicating with the ejection orifice; a flow path for supplying the liquid to the pressure chamber; and a first heat-generating element and a second heat-generating element for generating energy to be used for ejecting the liquid, which are arranged in the pressure chamber in the mentioned order in a supply direction of the liquid from the flow path to the pressure chamber, in which a portion between the first heat-generating element and the second heat-generating element is located in an opening of the ejection orifice, when viewed from a direction in which the liquid is ejected from the ejection orifice.

摘要翻译： 提供一种液体喷射头，包括：用于喷射液体的喷射孔; 与喷射孔连通的压力室; 用于将液体供应到压力室的流动路径; 以及用于产生用于喷射液体的能量的第一发热元件和第二发热元件，它们以液体从流动路径的压力方向按照上述顺序排列在压力室中 其中当从喷射口喷射液体的方向观察时，第一发热元件和第二发热元件之间的部分位于喷射孔的开口中。

公开(公告)号：US20120258566A1

公开(公告)日：2012-10-11

申请号：US13427419

申请日：2012-03-22

申请人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Hironobu MIYA

发明人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Hironobu MIYA

IPC分类号： H01L31/18 ,  C23C16/455 ,  H01L21/06

CPC分类号： H01L31/0322 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

摘要翻译： 提供了一种基板处理装置，包括：处理室，被配置为容纳多个基板，其上形成有由铜铟，铜镓或铜铟镓中的任一种构成的层压膜; 气体供给管，其构造成将含有元素的含硒气体或元素含硫气体引入所述处理室中; 排气管，其构造成排出处理室中的气氛; 以及设置成围绕反应管的加热部，其中反应管的基部由金属材料制成。

公开(公告)号：US20120258565A1

公开(公告)日：2012-10-11

申请号：US13431438

申请日：2012-03-27

申请人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Kosaku HIYAMA ,  Tomohiro NAKASUJI ,  Tatsuya HAMAGUCHI ,  Kiyoshi MIYAJIMA

发明人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Kosaku HIYAMA ,  Tomohiro NAKASUJI ,  Tatsuya HAMAGUCHI ,  Kiyoshi MIYAJIMA

IPC分类号： H01L31/0236 ,  C23C16/44

CPC分类号： H01L21/67109 ,  H01L21/67754 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

摘要： There is provided a substrate processing apparatus, comprising: a processing chamber in which a plurality of substrates are housed, the substrate having thereon a lamination film composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a porous coating film having a void rate of 5% to 15% mainly composed of a mixture of chromium oxide (CrxOy:x, y are arbitrary integer of 1 or more) silica is formed on a surface exposed to at least the elemental selenium-containing gas or the elemental sulfur-containing gas, out of the surface of the reaction tube on the processing chamber side.

摘要翻译： 提供了一种基板处理装置，包括：容纳多个基板的处理室，其上具有由铜铟，铜镓或铜铟镓中的任一种构成的层压膜的基板; 形成为构成处理室的反应管; 配置为将元素含硒气体或元素含硫气体引入所述处理室的气体供给管; 排气管，其构造成排出处理室中的气氛; 以及包围反应管的加热部，其特征在于，主要由氧化铬（Cr x O y：x，y为1以上的任意整数）的混合物构成的空隙率为5％〜15％的多孔质涂膜， 二氧化硅在暴露于至少含元素硒的气体或元素含硫气体的表面上形成在处理室侧的反应管表面之外。

公开(公告)号：US20120258018A1

公开(公告)日：2012-10-11

申请号：US13427304

申请日：2012-03-22

申请人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Hidenari YOSHIDA ,  Mitsunori ISHISAKA

发明人： Eisuke NISHITANI ,  Yasuo KUNII ,  Kazuyuki TOYODA ,  Hidenari YOSHIDA ,  Mitsunori ISHISAKA

IPC分类号： B01J19/24

CPC分类号： H01L21/67109 ,  H01L21/6719 ,  H01L21/67754 ,  H01L31/0322 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： There is provided a substrate procession apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; heating section provided so as to surround the reaction tube; and a fan configured to forcibly circulate the atmosphere in the processing chamber in a short-side direction of the plurality of glass substrates, on surfaces of the plurality of glass substrates.

摘要翻译： 提供了一种基板处理装置，包括：处理室，被配置为容纳多个基板，其上形成有由铜铟，铜镓或铜铟镓中的任一种构成的层压膜; 形成为构成处理室的反应管; 配置为将元素含硒气体或元素含硫气体引入所述处理室的气体供给管; 排气管，其构造成排出处理室中的气氛; 加热部分设置成围绕反应管; 以及风扇，被配置为在所述多个玻璃基板的表面上在所述多个玻璃基板的短边方向上强制地使所述处理室内的气氛循环。

公开(公告)号：US20120188310A1

公开(公告)日：2012-07-26

申请号：US13354270

申请日：2012-01-19

申请人： Tomoyuki Inoue ,  Toru Yamane ,  Eisuke Nishitani

发明人： Tomoyuki Inoue ,  Toru Yamane ,  Eisuke Nishitani

IPC分类号： B41J2/14

CPC分类号： B41J2/1404

摘要： In a liquid discharge head substrate having a connection line connected to a plurality of energy generating elements, and arranged between adjacent energy generating elements, a distance between the adjacent energy generating elements, between which the connection line is not arranged, is provided to be narrower than a distance of a portion where the connection line is provided.

摘要翻译： 在具有连接到多个能量产生元件并且布置在相邻的能量产生元件之间的连接线的液体排出头基板中，在相邻的能量产生元件之间的距离不设置连接线的距离较窄 比设置连接线的部分的距离长。