公开(公告)号：US08945416B2

公开(公告)日：2015-02-03

申请号：US13389048

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： H01L21/02 ,  B23K26/38 ,  B23K26/40 ,  H01L21/306 ,  H01L21/48 ,  B23K26/00

CPC分类号： H05K3/002 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/35 ,  B23K2103/50 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/486 ,  H05K2203/107

摘要： A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.

摘要翻译： 一种激光加工方法，其将激光会聚到由硅制成的待加工物体中以形成改质区域，并沿着改质区域蚀刻物体以形成具有通孔的物体，其包括：抗蚀剂膜制造步骤 产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 在该抗蚀剂膜制造工序之后，将激光会聚在被处理物体上的激光聚光步骤，沿着与物体的贯通孔对应的部分形成改质区域，并将激光会聚在抗蚀剂膜上，以便 沿着与蚀刻抗蚀剂膜中的通孔对应的部分形成缺陷区域; 以及在激光聚光步骤之后蚀刻所述物体以便沿着所述改质区域选择性地进行蚀刻并形成所述通孔的蚀刻步骤。

公开(公告)号：US08828873B2

公开(公告)日：2014-09-09

申请号：US13388626

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： H01L21/302 ,  H01L23/473 ,  B23K26/06 ,  B23K26/00 ,  B23K26/08

CPC分类号： B23K26/55 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K2101/40 ,  B23K2103/56 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object.

摘要翻译： 一种制造具有冷却机构的半导体器件的方法包括：将由激光制成的待加工的片状物体的激光聚光的改质区域形成工序，以在该物体内沿着线形成修饰区域，形成 修改区域，在改质区域形成工序后各向异性蚀刻物体的蚀刻步骤，以沿着第一改质区域选择性地进行蚀刻，并形成用于使作为冷却机构的冷却剂循环在物体内的流路，以及功能元件 在物体的一个主面侧形成功能元件的形成工序。

公开(公告)号：US20120135606A1

公开(公告)日：2012-05-31

申请号：US13389048

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： H01L21/02

CPC分类号： H05K3/002 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/35 ,  B23K2103/50 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/486 ,  H05K2203/107

摘要： A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.

摘要翻译： 一种激光加工方法，其将激光会聚到由硅制成的待加工物体中以形成改质区域，并沿着改质区域蚀刻物体以形成具有通孔的物体，其包括：抗蚀剂膜制造步骤 产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 在该抗蚀剂膜制造工序之后，将激光会聚在被处理物体上的激光聚光步骤，沿着与物体的贯通孔对应的部分形成改质区域，并将激光会聚在抗蚀剂膜上，以便 沿着与蚀刻抗蚀剂膜中的通孔对应的部分形成缺陷区域; 以及在激光聚光步骤之后蚀刻所述物体以便沿着所述改质区域选择性地进行蚀刻并形成所述通孔的蚀刻步骤。

公开(公告)号：US20110221336A1

公开(公告)日：2011-09-15

申请号：US13113604

申请日：2011-05-23

申请人： Hiroyuki KYUSHIMA ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

发明人： Hiroyuki KYUSHIMA ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

IPC分类号： H01J40/06

CPC分类号： H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

摘要翻译： 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：US07902509B2

公开(公告)日：2011-03-08

申请号：US12224367

申请日：2007-02-27

申请人： Hideki Shimoi ,  Katsuma Nagai ,  Hiroyuki Kyushima

发明人： Hideki Shimoi ,  Katsuma Nagai ,  Hiroyuki Kyushima

IPC分类号： G01T1/20 ,  H01J43/18

CPC分类号： H01J43/22

摘要： A vacuum vessel is configured by hermetically joining a faceplate to one end of a side tube and a stem to the other end via a tubular member. A photocathode, a focusing electrode, dynodes, a drawing electrode, and anodes are arranged within the vacuum vessel. The dynodes and the anodes have a plurality of channels in association with each other. The drawing electrode is placed on electrically-conductive supporting pins penetrating the stem. The dynodes are stacked with insulating members interposed between one another. Since the supporting pins and the insulating members are arranged coaxially, each electrode can be fixed by applying pressure in z-axis direction. At the same time, emission of light between the anodes and the drawing electrode can be suppressed, thereby enabling noise to be reduced.

摘要翻译： 真空容器通过经由管状构件将面板与侧管的一端气密地接合到另一端而构成。 在真空容器内设置光电阴极，聚焦电极，倍增极，牵伸电极和阳极。 倍增极和阳极具有彼此相关联的多个通道。 拉制电极放置在穿透杆的导电支撑销上。 倍增极堆叠成彼此插入的绝缘构件。 由于支撑销和绝缘构件同轴布置，因此可以通过在z轴方向上施加压力来固定每个电极。 同时，能够抑制阳极与拉伸电极之间的发光，能够降低噪音。

公开(公告)号：US07812532B2

公开(公告)日：2010-10-12

申请号：US12224377

申请日：2007-02-27

申请人： Hideki Shimoi ,  Koji Nagura ,  Hiroyuki Kyushima

发明人： Hideki Shimoi ,  Koji Nagura ,  Hiroyuki Kyushima

IPC分类号： H01J43/18

CPC分类号： H01J43/22

摘要： A vacuum vessel is configured by hermetically joining a faceplate to one end of a side tube and a stem to the other end via a tubular member. A photocathode, a focusing electrode, dynodes, a drawing electrode, and anodes are arranged within the vacuum vessel. The dynodes and the anodes have a plurality of channels in association with each other. Each electrode has cutout portions that overlap in a stacking direction, and supporting pins and lead pins are arranged in the cutout portions. A bridge is provided in a concave section arranged between unit anodes, and the bridge is cut off after the anode plate is placed on stem pins. Effective areas of each electrode and the anode are secured sufficiently, thereby allowing electrons to be detected efficiently.

摘要翻译： 真空容器通过经由管状构件将面板与侧管的一端气密地接合到另一端而构成。 在真空容器内设置光电阴极，聚焦电极，倍增极，牵伸电极和阳极。 倍增极和阳极具有彼此相关联的多个通道。 每个电极具有在堆叠方向上重叠的切口部分，并且支撑销和引导销布置在切口部分中。 在设置在单元阳极之间的凹部设置有桥，并且在将阳极板放置在杆销上之后，桥被切断。 每个电极和阳极的有效面积得到充分保证，从而有效地检测电子。

公开(公告)号：US20100213837A1

公开(公告)日：2010-08-26

申请号：US12709682

申请日：2010-02-22

申请人： Hideki SHIMOI ,  Hitoshi Kishita ,  Tsuyoshi Kodama ,  Hiroyuki Kyushima

发明人： Hideki SHIMOI ,  Hitoshi Kishita ,  Tsuyoshi Kodama ,  Hiroyuki Kyushima

IPC分类号： H01J43/18

CPC分类号： H01J43/243

摘要： Electrons are prevented from being made incident onto an insulation part of a casing between dynodes to improve a withstand voltage. The photomultiplier tube 1 is a photomultiplier tube which is provided with substrates 20, 40 arranged so as to oppose each other, with the respective opposing surfaces 20a, 40a made with an insulating material, a substrate 30 constituting a casing together with the substrates 20, 40, dynodes 31a to 31j arrayed on an opposing surface 40a on the substrate 40 so as to be spaced away sequentially from a first end side to a second end side, a photocathode 22 installed so as to be spaced away from the dynode 31a to the first end side, and an anode part 32 installed so as to be spaced away from the dynode 31j to the second end side, in which the opposing surface 20a of the substrate 20 is formed so as to cover the dynodes 31a to 31j, and a plurality of conductive layers 21a to 21j set equal in potential to dynodes 31a to 31j which are electrically independent from each other are installed at sites opposing individually the dynodes 31a to 31j on the opposing surface 20a.

摘要翻译： 防止电子入射到倍增极之间的壳体的绝缘部分上以提高耐受电压。 光电倍增管1是光电倍增管，其配置有彼此相对配置的基板20,40，由绝缘材料制成的相应的相对表面20a，40a，与基板20一起构成壳体的基板30， 如图40所示，倍增极31a至31j排列在基板40上的相对表面40a上，以便从第一端侧至第二端侧依次间隔开，安装成与倍增极31a间隔开的光电阴极22 第一端侧和阳极部32，其被安装成与倍增极31j间隔开至第二端侧，其中形成基板20的相对表面20a以覆盖倍增极31a至31j，并且 在彼此电独立的倍增极31a至31j的电位相等的多个导电层21a至21j安装在相对表面20a上的与倍增极31a至31j单独的位置处。

公开(公告)号：US20090140151A1

公开(公告)日：2009-06-04

申请号：US12224367

申请日：2007-02-27

申请人： Hideki Shimoi ,  Katsuma Nagai ,  Hiroyuki Kyushima

发明人： Hideki Shimoi ,  Katsuma Nagai ,  Hiroyuki Kyushima

IPC分类号： G01T1/20 ,  H01J43/18

CPC分类号： H01J43/22

摘要： A vacuum vessel is configured by hermetically joining a faceplate (13) to one end of a side tube (15) and a stem (29) to the other end via a tubular member (31). A photocathode (14), a focusing electrode (17), dynodes (Dy1-Dy12), a drawing electrode (19), and anodes (25) are arranged within the vacuum vessel. The dynodes (Dy1-Dy12) and the anodes (25) have a plurality of channels in association with each other. The drawing electrode (19) is placed on electrically-conductive supporting pins (21) penetrating the stem (29). The dynodes (Dy1-Dy12) are stacked with insulating members (23) interposed between one another. Since the supporting pins (21) and the insulating members (23) are arranged coaxially, each electrode can be fixed by applying pressure in z-axis direction. At the same time, emission of light between the anodes (25) and the drawing electrode (19) can be suppressed, thereby enabling noise to be reduced.

摘要翻译： 通过管状构件（31）将面板（13）与侧管（15）的一端和杆（29）气密地接合到另一端构成真空容器。 在真空容器内设置光电阴极（14），聚焦电极（17），倍增极（Dy1-Dy12），牵伸电极（19）和阳极（25）。 倍增极（Dy1-Dy12）和阳极（25）具有彼此相关联的多个通道。 拉制电极（19）放置在穿过杆（29）的导电支撑销（21）上。 倍增极（Dy1-Dy12）彼此之间插入绝缘构件（23）。 由于支撑销（21）和绝缘构件（23）同轴布置，因此可以通过在z轴方向施加压力来固定每个电极。 同时，可以抑制阳极（25）和拉伸电极（19）之间的发光，从而能够降低噪声。

公开(公告)号：US20090045741A1

公开(公告)日：2009-02-19

申请号：US11921959

申请日：2006-06-01

申请人： Hiroyuki Kyushima ,  Hideki Shimoi ,  Hiroyuki Sugiyama ,  Hitoshi Kishita ,  Suenori Kimura ,  Yuji Masuda ,  Takayuki Ohmura

发明人： Hiroyuki Kyushima ,  Hideki Shimoi ,  Hiroyuki Sugiyama ,  Hitoshi Kishita ,  Suenori Kimura ,  Yuji Masuda ,  Takayuki Ohmura

IPC分类号： H01J43/04

CPC分类号： H01J43/24

摘要： The present invention relates to a photomultiplier having a fine structure capable of realizing high detection accuracy by effectively suppressing cross talk among electron-multiplier channels. The photomultiplier comprises a housing whose inside is maintained vacuum, and, in the housing, a photocathode, an electron-multiplier section, and anodes are disposed. The electron-multiplier section has groove portions for cascade-multiplying photoelectrons as electron-multiplier channels, and the anodes are constituted by channel electrodes corresponding to the groove portions respectively defined by wall parts. In particular, at least parts of the respective channel electrodes are located in spaces sandwiched between pairs of wall parts defining the corresponding groove portions.

摘要翻译： 本发明涉及具有能够通过有效地抑制电子倍增器通道之间的串扰来实现高检测精度的精细结构的光电倍增管。 光电倍增管包括其内部保持真空的壳体，并且在壳体中设置光电阴极，电子倍增器部分和阳极。 电子倍增器部分具有用于级联倍增光电子作为电子倍增器通道的槽部分，并且阳极由对应于分别由壁部分限定的槽部分的沟道电极构成。 特别地，各通道电极的至少一部分位于夹在形成相应凹槽部分的一对壁部分之间的空间中。

公开(公告)号：US07323674B2

公开(公告)日：2008-01-29

申请号：US11506204

申请日：2006-08-18

申请人： Hisaki Kato ,  Hideki Shimoi ,  Kazuya Horiuchi ,  Toshiaki Ushizu

发明人： Hisaki Kato ,  Hideki Shimoi ,  Kazuya Horiuchi ,  Toshiaki Ushizu

IPC分类号： H01J40/14 ,  H01J43/00

CPC分类号： H01J43/22 ,  H01J40/14 ,  H01J43/045

摘要： The present invention relates to a photodetector that has a structure capable of realizing a wide range gain adjustment for each of electron multiplier channels respectively assigned to a plurality of light incidence regions of a multi-anode multiplier. The photodetector comprises a multi-anode photomultiplier, and a bleeder circuit unit. The multi-anode multiplier has a dynode unit constituted by N (an integer or no less than 3) dynode plates, and n-th (an integer of no less then 2) dynode plate is constituted by a plurality of control plates respectively corresponding to the multiplier channels. The bleeder circuit unit has a primary section setting each potential of a first to (n−1)-th and (n+1)-th to N-th dynode plates, and a secondary section for individually setting a potential of each control plate at any potential within the range wider than a potential difference between the (n−1)-th and (n+1) dynode plates. By expanding the potential setting range for the control plates rather than the potential difference between the dynode plates adjacent to the n-th dynode plate, the gain of each electron multiplier channel can be controlled by two digits or more.

摘要翻译： 本发明涉及一种具有能够实现对分别分配给多阳极倍增器的多个入射区域的每个电子倍增器通道的宽范围增益调整的结构的光电检测器。 光电检测器包括多阳极光电倍增管和泄放电路单元。 多阳极倍增器具有由N（整数或不小于3）倍增极板构成的倍增电极单元，并且第n（不小于2的整数）倍增极板由分别对应于 乘数通道。 泄放电路单元具有设定第一至第（n-1）和第（n + 1）至第N倍增电极板的每个电位的主要部分，以及用于单独设置每个控制板的电位的次级部分 在比第（n-1）和（n + 1）倍增极板之间的电位差宽的范围内的任何电位。 通过扩大控制板的电位设置范围，而不是与第n倍增极板相邻的倍增极板之间的电位差，每个电子倍增器通道的增益可以被控制在两位以上。