公开(公告)号：US08828260B2

公开(公告)日：2014-09-09

申请号：US13389287

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： B44C1/22 ,  B23K26/00 ,  B23K26/38 ,  B23K26/40 ,  B23K26/06 ,  H01L21/306 ,  B23K26/073 ,  H01L21/768

CPC分类号： B23K26/40 ,  B23K26/0006 ,  B23K26/064 ,  B23K26/0736 ,  B23K26/382 ,  B23K26/384 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/76898

摘要： A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and produce a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of 45° or greater therebetween, and the modified spots are made align in one row along the line.

摘要翻译： 在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的 沿着该线的衬底内的斑点，并产生包括改性斑点的改性区域;以及第二步骤，各向异性蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。 在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成45°或更大的角度，并且将修改的光点对准 沿着一行。

公开(公告)号：US08685269B2

公开(公告)日：2014-04-01

申请号：US13388717

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： B44C1/22

CPC分类号： H01L21/30608 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2101/35 ,  B23K2103/50 ,  H01L21/30604 ,  H01L21/486

摘要： A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object.

摘要翻译： 一种激光加工方法，其将激光会聚到由硅制成的被处理物体中以形成改质区域，并沿着改质区域蚀刻物体以形成具有通孔的物体，其包括：会聚的激光聚光步骤 激光在物体上沿着与物体中的通孔对应的部分形成改质区域; 蚀刻抗蚀剂膜制造步骤，在激光聚光步骤之后产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 以及蚀刻步骤，用于蚀刻所述物体，以便沿着所述改质区域选择性地推进所述蚀刻，并且在所述抗蚀剂膜制造步骤之后形成所述通孔; 而激光聚光步骤将修饰区域暴露于物体的外表面。

公开(公告)号：US08673167B2

公开(公告)日：2014-03-18

申请号：US13361079

申请日：2012-01-30

申请人： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

发明人： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L23/481 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/55 ,  B23K2103/50 ,  B81B2203/0353 ,  B81B2203/0384 ,  B81C1/00087 ,  B81C2201/0143 ,  H01L21/30608 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

摘要： A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.

摘要翻译： 在由硅制成的待加工的片状物体中形成孔的激光加工方法包括凹陷形成步骤，在与物体的激光入射面侧的孔对应的部分形成凹部，凹部开口 到激光入射面; 改变区域形成步骤，通过在所述凹陷形成步骤之后会聚所述物体上的激光，沿着与所述物体中的所述孔相对应的部分形成改质区域; 以及在改质区域形成工序后对物体进行各向异性蚀刻的蚀刻工序，以沿着改质区域选择性地进行蚀刻，并在物体上形成孔; 其中所述改性区域形成步骤将所述改性区域或从所述改质区域延伸的断裂暴露于所述凹陷的内表面。

公开(公告)号：US08643258B2

公开(公告)日：2014-02-04

申请号：US13548772

申请日：2012-07-13

申请人： Hiroyuki Kyushima ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

发明人： Hiroyuki Kyushima ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

IPC分类号： H01J43/00

CPC分类号： H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

摘要： The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

摘要翻译： 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：US20120299219A1

公开(公告)日：2012-11-29

申请号：US13389676

申请日：2011-05-27

申请人： Hideki Shimoi ,  Keisuke Araki ,  Naoki Uchiyama

发明人： Hideki Shimoi ,  Keisuke Araki ,  Naoki Uchiyama

IPC分类号： B29C35/08

CPC分类号： H01L21/30604 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  C03C15/00 ,  C03C23/0025 ,  H01L21/30608 ,  H01L21/30612 ,  H01L21/30617

摘要： The present invention provides a laser processing method which improves strength and quality of an object to be processed after working. In the present embodiment, after modified regions 7 are formed along the outlines of hollowed-out portions Q1 and Q2 in the object 1 by irradiating the object 1 with a laser light, etching is performed onto the object 1 to selectively advance etching along a fracture which is contained in the modified regions 7 or extend from the modified regions 7, and the hollowed-out portions Q1 and Q2 are spaced and moved from the object 1. Here, the modified regions 7 are formed so as to connect to each other along the outlines of the hollowed-out portions Q1 and Q2, and further exposed on a surface 3 side of the object 1. In this way, in the present embodiment, it is possible to perform working so as to hollow out the hollowed-out portions Q1 and Q2 from the object 1 without applying external stress, and it is possible to remove the fracture generated according to the formation of the modified regions 7 by etching.

摘要翻译： 本发明提供一种提高加工后的被处理物的强度和质量的激光加工方法。 在本实施方式中，通过用激光照射物体1，沿着物体1的中空部分Q1和Q2的轮廓形成改性区域7之后，对物体1进行蚀刻以选择性地进行沿断裂的蚀刻 其被包含在改质区域7中或者从改质区域7延伸出来，并且中空部分Q1和Q2从物体1间隔开并移动。这里，改性区域7形成为沿着彼此连接 中空部分Q1和Q2的轮廓，并且进一步暴露在物体1的表面3侧上。以这种方式，在本实施例中，可以进行加工，以便将中空部分 Q1和Q2，而不施加外部应力，并且可以通过蚀刻去除根据改质区域7的形成产生的断裂。

公开(公告)号：US20120135608A1

公开(公告)日：2012-05-31

申请号：US13389288

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： H01L21/306

CPC分类号： B23K26/064 ,  B23K26/0006 ,  B23K26/0736 ,  B23K26/382 ,  B23K26/384 ,  B23K26/40 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/76898

摘要： A substrate processing method for forming a space extending along a predetermined line in a silicon substrate includes a first step of converging a laser light which is an elliptically-polarized light having an ellipticity other than 1 at the substrate so as to form a plurality of modified spots within the substrate along the line and construct a modified region including the modified spots, and a second step of anisotropically etching the substrate so as to advance an etching selectively along the modified region and form the space in the substrate. In the first step, the light is converged at the substrate such that a moving direction of the light with respect to the substrate and a direction of polarization of the light form an angle of less than 45° therebetween, and the modified spots are made align in a plurality of rows along the line.

摘要翻译： 在硅衬底中形成沿着预定线延伸的空间的衬底处理方法包括：在衬底处会聚具有除了1以外的椭圆率的椭圆偏振光的激光的第一步骤，以形成多个经修改的 并且构建包含修饰斑点的改性区域，以及第二步骤，各向异性地蚀刻衬底，以沿着改质区域选择性地进行刻蚀，并形成衬底中的空间。 在第一步骤中，光在基板处会聚，使得光相对于基板的移动方向和光的偏振方向在其间形成小于45°的角度，并且将修改的光点对准 沿着线的多行。

公开(公告)号：US20120125893A1

公开(公告)日：2012-05-24

申请号：US13388597

申请日：2011-07-19

申请人： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

发明人： Hideki Shimoi ,  Hiroyuki Kyushima ,  Keisuke Araki

IPC分类号： B44C1/22 ,  H01L21/306

CPC分类号： H01L23/147 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0853 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/30608 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827

摘要： In a method comprising a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a plurality of modified spots within the object along a modified region forming line tilted in a first lateral direction with respect to a thickness direction of the object and the plurality of modified spots construct a modified region, and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the object with a space extending obliquely with respect to the thickness direction, the modified region forming step forms the plurality of modified spots such that the modified spots adjacent to each other at least partly overlap each other when seen in the first lateral direction.

摘要翻译： 在包括修改区域形成步骤的方法中，所述修改区域形成步骤将激光会聚在由硅制成的待加工的片状物体上，以沿着沿第一横向方向倾斜的改质区域形成线在物体内形成多个改质点 相对于物体的厚度方向，并且所述多个改质点构成改质区域，以及在所述改质区域形成工序之后对所述物体进行各向异性蚀刻的蚀刻工序，以沿着所述改质区域选择性地进行蚀刻，并形成所述物体 具有相对于厚度方向倾斜延伸的空间，所述改质区域形成步骤形成所述多个改质点，使得当在所述第一横向方向上观察时，彼此相邻的所述改性斑点彼此至少部分重叠。

公开(公告)号：US20120125887A1

公开(公告)日：2012-05-24

申请号：US13388595

申请日：2011-07-19

申请人： Hideki Shimoi ,  Keisuke Araki

发明人： Hideki Shimoi ,  Keisuke Araki

IPC分类号： B44C1/22

CPC分类号： B23K26/355 ,  B23K26/361 ,  H01L31/02363 ,  Y02E10/50

摘要： A method for manufacturing a light-absorbing substrate having a surface with depressions and projections comprises a first step of irradiating a substrate with a laser light so as to form a plurality of modified regions arranged two-dimensionally along a surface of the substrate within the substrate and cause at least one of each modified region and a fracture generated from the modified region to reach the surface of the substrate and a second step of etching the surface of the substrate after the first step so as to form depressions and projections on the surface of the substrate.

摘要翻译： 一种具有凹凸表面的光吸收基板的制造方法，其特征在于，包括：第一工序，用激光照射基板，形成沿着基板的基板表面二维配置的多个改质区域 并且使得每个改性区域中的至少一个和从所述改性区域产生的断裂到达所述基板的表面;以及第二步骤，在所述第一步骤之后蚀刻所述基板的表面，以在所述第一步骤的表面上形成凹陷和突起 底物。

公开(公告)号：US20120111495A1

公开(公告)日：2012-05-10

申请号：US13383487

申请日：2010-07-21

申请人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

发明人： Hideki Shimoi ,  Naoki Uchiyama ,  Daisuke Kawaguchi

IPC分类号： B32B38/04 ,  B32B37/02 ,  B26F3/00 ,  B23P17/00 ,  H05K13/00

CPC分类号： B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

摘要： A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

摘要翻译： 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

公开(公告)号：US08115386B2

公开(公告)日：2012-02-14

申请号：US12709682

申请日：2010-02-22

申请人： Hideki Shimoi ,  Hitoshi Kishita ,  Tsuyoshi Kodama ,  Hiroyuki Kyushima

发明人： Hideki Shimoi ,  Hitoshi Kishita ,  Tsuyoshi Kodama ,  Hiroyuki Kyushima

IPC分类号： H01J43/18

CPC分类号： H01J43/243

摘要： Electrons are prevented from being made incident onto an insulation part of a casing between dynodes to improve a withstand voltage. The photomultiplier tube 1 is a photomultiplier tube which is provided with substrates 20, 40 arranged so as to oppose each other, with the respective opposing surfaces 20a, 40a made with an insulating material, a substrate 30 constituting a casing together with the substrates 20, 40, dynodes 31a to 31j arrayed on an opposing surface 40a on the substrate 40 so as to be spaced away sequentially from a first end side to a second end side, a photocathode 22 installed so as to be spaced away from the dynode 31a to the first end side, and an anode part 32 installed so as to be spaced away from the dynode 31j to the second end side, in which the opposing surface 20a of the substrate 20 is formed so as to cover the dynodes 31a to 31j, and a plurality of conductive layers 21a to 21j set equal in potential to dynodes 31a to 31j which are electrically independent from each other are installed at sites opposing individually the dynodes 31a to 31j on the opposing surface 20a.

摘要翻译： 防止电子入射到倍增极之间的壳体的绝缘部分上以提高耐受电压。 光电倍增管1是光电倍增管，其配置有彼此相对配置的基板20,40，由绝缘材料制成的相应的相对表面20a，40a，与基板20一起构成壳体的基板30， 如图40所示，倍增极31a至31j排列在基板40上的相对表面40a上，以便从第一端侧至第二端侧依次间隔开，安装成与倍增极31a间隔开的光电阴极22 第一端侧和阳极部32，其被安装成与倍增极31j间隔开至第二端侧，其中形成基板20的相对表面20a以覆盖倍增极31a至31j，并且 在彼此电独立的倍增极31a至31j的电位相等的多个导电层21a至21j安装在相对表面20a上的与倍增极31a至31j单独的位置处。