公开(公告)号：US20090317980A1

公开(公告)日：2009-12-24

申请号：US12548814

申请日：2009-08-27

申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

IPC分类号： H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes:a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate;an H2O adding port which permits the addition of H2O;a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; anda protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

摘要翻译： 一种可连接到外部循环系统的过滤器，该循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，该过滤器包括：化学物质进料口，其允许含有由于蚀刻所沉积的颗粒的H 3 PO 4溶液进料 基质; 一个允许加入H 2 O的H 2 O加入口; 通过加入H 2 O使热分布不均匀的H 3 PO 4溶液除去颗粒的过滤膜; 以及保护构件，其设置在H 2 O添加口和过滤膜之间，并且保护过滤膜免于通过加入H 2 O引起的H 3 PO 4溶液的撞击。

公开(公告)号：US20080064212A1

公开(公告)日：2008-03-13

申请号：US11892634

申请日：2007-08-24

申请人： Yoshihiro Ogawa ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Kaori Umezawa ,  Hiroshi Tomita ,  Atsuko Kawasaki

发明人： Yoshihiro Ogawa ,  Masahiro Kiyotoshi ,  Katsuhiko Tachibana ,  Hiroyasu Iimori ,  Hiroaki Yamada ,  Kaori Umezawa ,  Hiroshi Tomita ,  Atsuko Kawasaki

IPC分类号： H01L21/311 ,  H01L21/31

CPC分类号： H01L21/3125 ,  C23C18/122 ,  C23C18/1287 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/316 ,  H01L21/3165 ,  H01L21/67086

摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.

摘要翻译： 一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

公开(公告)号：US20070224792A1

公开(公告)日：2007-09-27

申请号：US11702575

申请日：2007-02-06

申请人： Hiroshi Tomita ,  Hiroyasu Iimori

发明人： Hiroshi Tomita ,  Hiroyasu Iimori

IPC分类号： H01L21/465 ,  C09K13/08

CPC分类号： H01L21/02071 ,  C09K13/08 ,  H01L21/0206 ,  H01L21/31111

摘要： This disclosure concerns a manufacturing method of a semiconductor device comprising an etching process using an etching solution having ozone dissolved by 10 ppm or more into a liquid containing H2SO4 by 86 wt % to 97.9 wt %, HF by 0.1 wt % to 10 wt %, and H2O by 2 wt % to 4 wt %.

摘要翻译： 本公开涉及一种半导体器件的制造方法，其包括使用具有溶解在10ppm以上的臭氧的蚀刻溶液的含有H 2 SO 4的液体的蚀刻工艺86 重量％至97.9重量％，HF为0.1重量％至10重量％，H 2 O 2为2重量％至4重量％。

公开(公告)号：US20050211378A1

公开(公告)日：2005-09-29

申请号：US11076231

申请日：2005-03-10

申请人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

发明人： Hiroyasu Iimori ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Yoshihiro Ogawa

IPC分类号： H01L21/306 ,  C23F1/00 ,  H01L21/00 ,  H01L21/311

CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/31111

摘要： A filter connectable to an external circulating system, the circulating system being included by a substrate treatment apparatus which etches a substrate with an H3PO4 solution, the filter includes: a chemical feeding port which permits feed of H3PO4 solution containing particles deposited due to etching of a substrate; an H2O adding port which permits the addition of H2O; a filter film which removes the particles from the H3PO4 solution whose heat distribution is made ununiform by the addition of H2O; and a protection member which is disposed between the H2O adding port and the filter film and which protects the filter film from bumping of the H3PO4 solution that is causable by the addition of H2O.

摘要翻译： 一种可连接到外部循环系统的过滤器，所述循环系统由用H 3 PO 4溶液蚀刻衬底的衬底处理设备包括，所述过滤器包括： 化学品供给口，其允许由于蚀刻基材而沉积的含有3个/ 3个PO 4的溶液的进料; 允许加入H 2 O的H 2 O 2添加口; 过滤膜，其通过添加H 2 O 2从热分布不均匀的H 3 PO 4 溶液中除去颗粒; 以及保护构件，其设置在H 2 O 2添加口和过滤膜之间，并且保护过滤膜免受H 3 PO 4加成口的冲击， / SUB溶液，其通过加入H 2 O 2可以引起。