公开(公告)号：US20080107582A1

公开(公告)日：2008-05-08

申请号：US11974921

申请日：2007-10-16

Applicant: Young-Ho Hong ,  Sang-Jun Lee ,  Seong-Oh Jeong ,  Hong-Woo Lee

Inventor： Young-Ho Hong ,  Sang-Jun Lee ,  Seong-Oh Jeong ,  Hong-Woo Lee

IPC: C30B15/00 ,  C01F17/00

CPC classification number: C30B15/305 ,  C30B15/36

Abstract: A method for manufacturing a semiconductor single crystal uses a Czochralski (CZ) process in which a seed crystal is dip into a melt of semiconductor raw material and dopant received in a crucible, and the seed crystal is slowly pulled upward while rotated to grow a semiconductor single crystal. Here, a cusp-type asymmetric magnetic field having different upper and lower magnetic field intensities based on ZGP (Zero Gauss Plane) where a vertical component of the magnetic field is 0 is applied to the crucible such that a specific resistance profile, theoretically calculated in a length direction of crystal, is expanded in a length direction of crystal. Thus, thickness of a diffusion boundary layer near a solid-liquid interface is increased to increase an effective segregation coefficient of dopant, thereby expanding a specific resistance profile in a length direction of crystal, increasing a prime length of the single crystal, and improving productivity.

Abstract translation: 半导体单晶的制造方法使用Czochralski（CZ）工艺，其中将晶种浸入坩埚中接收的半导体原料和掺杂剂的熔体中，并将​​晶种缓慢地向上拉，同时旋转以生长半导体 单晶。 这里，基于ZGP（零高斯平面）将磁场的垂直分量为0的具有不同的上，下磁场强度的尖点型非对称磁场施加到坩埚上，使得电阻率分布理论上计算 晶体的长度方向在晶体的长度方向上扩展。 因此，固液界面附近的扩散边界层的厚度增加，以增加掺杂剂的有效偏析系数，从而扩大晶体长度方向的电阻率分布，增加单晶的主长度，提高生产率 。

公开(公告)号：US20080068358A1

公开(公告)日：2008-03-20

申请号：US11782967

申请日：2007-07-25

Applicant: Hong-Woo LEE ,  Myung-Koo HUR ,  Jong-Hwan LEE

Inventor： Hong-Woo LEE ,  Myung-Koo HUR ,  Jong-Hwan LEE

IPC: G09G5/00 ,  G09G3/36

CPC classification number: G09G3/3659 ,  G09G3/2074 ,  G09G3/3677 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/0443 ,  G09G2300/0447

Abstract: A display apparatus has a pixel including a main pixel connected to a main gate line and a data line, and a sub-pixel connected to a sub-gate line and the data line. A main gate driver outputs a main gate pulse to the main gate line during a time period 1H. A sub-gate driver receives the main gate pulse and outputs a sub-gate pulse to the sub-gate line during a first portion of time period 1H. The data driver applies a sub-pixel voltage to the data line during the first portion of time period 1H and applies the main pixel voltage to the data line during a second portion of time period 1H.

Abstract translation: 显示装置具有包括连接到主栅极线和数据线的主像素的像素，以及连接到子栅极线和数据线的子像素。 主栅极驱动器在时间段1H期间向主栅极线输出主栅极脉冲。子栅极驱动器接收主栅极脉冲并在第一部分时间期间向子栅极线输出子栅极脉冲 数据驱动器在时间段1H的第一部分期间向数据线施加子像素电压，并且在时间段1 H的第二部分期间将主像素电压施加到数据线。

公开(公告)号：US20070181877A1

公开(公告)日：2007-08-09

申请号：US11496320

申请日：2006-07-31

Applicant: Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

Inventor： Do Gi Lim ,  Jong Hwan Lee ,  Hong Woo Lee ,  Yong Jo Kim ,  Yong Woo Lee

IPC: H01L29/04

CPC classification number: H01L27/1222 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1288

Abstract: A thin film transistor substrate, wherein the moving area of electrons between source and drain electrodes of a thin film transistor (TFT) is minimized, the moving distance of electrons is increased, and the sizes of capacitors defined by a gate electrode together with the respective source and drain electrodes are identical to each other so that an off current generated when the TFT is off can be minimized; a method of manufacturing the thin film transistor substrate; and a mask for manufacturing the thin film transistor substrate. Accordingly, it is possible to minimize an off current induced due to a phenomenon of electron trapping by light.

Abstract translation: 一种薄膜晶体管基板，其中薄膜晶体管（TFT）的源极和漏极之间的电子的移动面积最小化，电子的移动距离增加，并且由栅电极限定的电容器的尺寸与相应的 源极和漏极彼此相同，使得当TFT截止时产生的截止电流可以最小化; 制造薄膜晶体管基板的方法; 以及用于制造薄膜晶体管基板的掩模。 因此，可以将由于光的电子俘获现象引起的截止电流最小化。

公开(公告)号：US20060240815A1

公开(公告)日：2006-10-26

申请号：US11404984

申请日：2006-04-14

Applicant: Bo-Wook Shim ,  Hong-Woo Lee

Inventor： Bo-Wook Shim ,  Hong-Woo Lee

IPC: H04Q7/20

CPC classification number: H04B7/0802 ,  H04B17/21 ,  H04W28/18 ,  H04W88/02

Abstract: Disclosed herein is an apparatus and method for performing radio frequency calibration in a mobile phone. The apparatus includes a process control Personal Computer (PC), a base station controller simulator, a switching jig, and a Level Translator (LT). The process control PC performs the overall control of the apparatus for performing RF calibration. The base station controller simulator transmits the RF signals. The switching jig is connected between first and second wireless paths of the diversity mobile communication terminal and the base station controller simulator and is configured to selectively connect the first wireless path and the second wireless path to the base station controller simulator under the control of the process control PC. The LT keeps voltage, which is applied to the diversity mobile communication terminal, constant under the control of the process control PC.

Abstract translation: 这里公开了一种用于在移动电话中执行射频校准的装置和方法。 该装置包括过程控制个人计算机（PC），基站控制器模拟器，切换夹具和电平转换器（LT）。 过程控制PC执行用于执行RF校准的装置的总体控制。 基站控制器模拟器发射RF信号。 切换夹具连接在分集移动通信终端和基站控制器模拟器的第一和第二无线路径之间，并且被配置为在该过程的控制下选择性地将第一无线路径和第二无线路径连接到基站控制器模拟器 控制PC。 在过程控制PC的控制下，LT保持施加到分集移动通信终端的电压恒定。

公开(公告)号：US07125608B2

公开(公告)日：2006-10-24

申请号：US11001888

申请日：2004-12-01

Applicant: Young Ho Hong ,  Ill Soo Choi ,  Sang Hee Kim ,  Man Seok Kwak ,  Hong Woo Lee

Inventor： Young Ho Hong ,  Ill Soo Choi ,  Sang Hee Kim ,  Man Seok Kwak ,  Hong Woo Lee

IPC: B32B9/04 ,  C30B29/06

CPC classification number: C30B29/06 ,  C30B15/14 ,  C30B15/20 ,  Y10T428/21

Abstract: The present invention improves upon the Czochralski method for growing a single-crystal silicon ingot and provides a high quality silicon wafer having an oxide layer with superior voltage-resistance characteristics. An apparatus and method are also provided, whereby vacancy defect density and distribution are uniformly controlled. A single-crystal silicon ingot is grown under a condition where the temperature variation of the ingot is less than or equal to 20° C./cm in the temperature range of 1000 to 1100° C.

Abstract translation: 本发明改进了用于生长单晶硅锭的Czochralski方法，并且提供了具有优异的耐电压特性的具有氧化物层的高品质硅晶片。 还提供了一种装置和方法，由此均匀地控制了空缺缺陷密度和分布。 在1000〜1100℃的温度范围内，锭的温度变化小于或等于20℃/ cm的条件下，生长单晶硅锭。

公开(公告)号：US06858077B2

公开(公告)日：2005-02-22

申请号：US10291640

申请日：2002-11-12

Applicant: Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

Inventor： Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

IPC: C30B29/06 ,  C30B15/00 ,  H01L21/02 ,  H01L21/208 ,  C30B30/04

CPC classification number: C30B29/06 ,  C30B15/203 ,  C30B15/206 ,  Y10T428/21

Abstract: The present invention relates to a single crystalline silicon ingot, a single crystalline wafer, and a producing method thereof in accordance with the Czochralski method which enables reduction of a large defect area while increasing a micro-vacancy defect area in an agglomerated vacancy point area, which is the area between a central axis and an oxidation-induced stacking fault ring, by providing uniform conditions of crystal ingot growth and cooling and by adjusting a pulling rate for growing an ingot to grow, thus the oxidation-induced stacking fault ring exists only at an edge of the ingot radius.

Abstract translation: 本发明涉及一种单晶硅锭，单晶晶片及其制造方法，该方法能够减少大的缺陷面积，同时增加聚集的空位点区域的微空缺缺陷面积， 这是通过提供晶锭生长和冷却的均匀条件以及通过调整生长锭生长的牵引速率来产生中心轴和氧化诱发的堆垛层错环之间的区域，因此氧化诱导堆垛层错环只存在 在晶锭半径的边缘。

公开(公告)号：US06527859B2

公开(公告)日：2003-03-04

申请号：US09920808

申请日：2001-08-03

Applicant: Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

Inventor： Hong-Woo Lee ,  Joon-Young Choi ,  Hyon-Jong Cho ,  Hak-Do Yoo

IPC: C30B3500

CPC classification number: C30B15/14 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

Abstract: A chamber with a quartz crucible established therein for growing a single crystalline ingot with a predetermined diameter D which is to be put in the crucible. The quartz crucible is wrapped in a crucible supporter fixed to a rotational axis, with a heater surrounding the crucible support and a thermos surrounding the heater to prevent heat radiated from the heater from propagating into a wall of the chamber. A thermal shield is included which has a first cylindrical shielding part installed between the ingot and the crucible, a second flange type shielding part connected to an upper part of the first shielding part, and a third shielding part connected to a lower part of the first shielding part and protruding toward the ingot.

公开(公告)号：US09396696B2

公开(公告)日：2016-07-19

申请号：US12861360

申请日：2010-08-23

Applicant: Sung-Man Kim ,  Hong-Woo Lee ,  Chang-Ho Lee ,  Eung-Gyu Lee ,  Yu-Jun Kim ,  Yu-Jin Kim ,  Jin-Suk Seo ,  Byung-Su Oh

Inventor： Sung-Man Kim ,  Hong-Woo Lee ,  Chang-Ho Lee ,  Eung-Gyu Lee ,  Yu-Jun Kim ,  Yu-Jin Kim ,  Jin-Suk Seo ,  Byung-Su Oh

IPC: G09G5/00 ,  G09G3/36

CPC classification number: G09G5/00 ,  G09G3/36

Abstract: A liquid crystal display (“LCD”) device includes a display panel, a data driving part, and at least one first light-blocking part and at least one second light-blocking part. The display panel includes a plurality of pixels and a plurality of data lines. The pixels are arranged in a column direction and a row direction. At least one of the data lines extends in a zigzag shape along the column direction to be discontinuously disposed between two adjacent columns of the pixels. The at least one data line is electrically connected to two of the pixels that are adjacent in the row direction. The second light-blocking part is thinner than the first light-blocking part. The first light-blocking part and the second light-blocking are repeatedly disposed on an area between two adjacent columns of the pixels. The data driving part applies a data signal to the data lines.

Abstract translation: 液晶显示器（“LCD”）器件包括显示面板，数据驱动部分和至少一个第一遮光部分和至少一个第二遮光部分。 显示面板包括多个像素和多条数据线。 像素沿列方向和行方向排列。 数据线中的至少一条沿着列方向以锯齿形延伸，以不连续地设置在像素的两个相邻列之间。 至少一条数据线电连接到在行方向上相邻的两个像素。 第二遮光部分比第一遮光部分薄。 第一遮光部分和第二光阻被重复地设置在像素的两个相邻列之间的区域上。 数据驱动部分将数据信号应用于数据线。

公开(公告)号：US20130009955A1

公开(公告)日：2013-01-10

申请号：US13636998

申请日：2011-04-08

Applicant: Dae Sic Woo ,  Byoung Ki Jeon ,  A Ran Kim ,  Hong Woo Lee ,  Jong Dae Kim ,  Won Suk Chung

Inventor： Dae Sic Woo ,  Byoung Ki Jeon ,  A Ran Kim ,  Hong Woo Lee ,  Jong Dae Kim ,  Won Suk Chung

IPC: G06T5/40

CPC classification number: G06T5/005 ,  H04N13/111 ,  H04N13/128

Abstract: An embodiment of the present invention relates to a method and apparatus for correcting errors in stereo images. The apparatus for correcting errors in stereo images according to an embodiment of the present invention comprises: a space histogram generation unit generating space histogram information using the depth map information on the input image data; a peak frequency generation unit generating a peak frequency using the 2D image data of the input image data; an object analysis unit determining the error in each frame of the input image data on the basis of the space histogram and peak frequency; a depth map error correction unit correcting the depth map information to reduce the error; and a rendering processing unit generating left and right eye images, which are stereo images, by using the corrected depth map information.

Abstract translation: 本发明的实施例涉及用于校正立体图像中的错误的方法和装置。 根据本发明的实施例的用于校正立体图像中的误差的装置包括：空间直方图生成单元，使用关于输入图像数据的深度图信息生成空间直方图信息; 峰值频率生成单元，使用输入图像数据的2D图像数据生成峰值频率; 对象分析单元，基于空间直方图和峰值频率来确定输入图像数据的每帧中的误差; 深度图错误校正单元，校正深度图信息以减少误差; 以及通过使用校正的深度图信息来生成左眼图像和右眼图像的再现处理单元，其是立体图像。

公开(公告)号：US20120322512A1

公开(公告)日：2012-12-20

申请号：US13594539

申请日：2012-08-24

Applicant: In Kwang KIM ,  Hong Woo LEE

Inventor： In Kwang KIM ,  Hong Woo LEE

IPC: H04B7/02 ,  H04B1/38

CPC classification number: H04B7/0689 ,  H04B7/0871

Abstract: A mobile phone to transmit and receive a radio frequency signal through a first antenna and a second antenna in a radio communication system includes a first radio frequency signal receiving unit to convert the radio frequency signal received through the first antenna into a baseband signal to be transmitted to a controller, a second radio frequency signal receiving unit to convert the radio frequency signal received through the second antenna into a baseband signal to be transmitted to the controller, and a radio frequency signal transmitting unit to convert a baseband signal transmitted from the controller into a radio frequency signal, to distribute the radio frequency signal, and to selectively output the distributed radio frequency signal to the first antenna and the second antenna.

Abstract translation: 一种在无线电通信系统中通过第一天线和第二天线发送和接收射频信号的移动电话包括：第一射频信号接收单元，用于将通过第一天线接收的射频信号转换为要传输的基带信号 控制器，第二射频信号接收单元，将通过第二天线接收的射频信号转换为要发送到控制器的基带信号;以及射频信号发送单元，将从控制器发送的基带信号转换为 射频信号，以分配射频信号，并选择性地将分布式射频信号输出到第一天线和第二天线。