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    IMAGE SENSOR WITH LOW CROSSTALK AND HIGH RED SENSITIVITY
    22.
    发明申请
    IMAGE SENSOR WITH LOW CROSSTALK AND HIGH RED SENSITIVITY 有权
    具有低CROSSTALK和高红色灵敏度的图像传感器

    公开(公告)号：US20100084692A1

    公开(公告)日：2010-04-08

    申请号：US12247776

    申请日：2008-10-08

    申请人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    发明人： Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai ,  Yin Qian ,  Howard E. Rhodes

    IPC分类号： H01L29/78 ,  H01L31/0232

    CPC分类号： H01L27/1463

    摘要： A color pixel array includes first, second, and third pluralities of color pixels each including a photosensitive region disposed within a first semiconductor layer. In one embodiment, a second semiconductor layer including deep dopant regions is disposed below the first semiconductor layer. The deep dopant regions each reside below a corresponding one of the first plurality of color pixels but substantially not below the second and third pluralities of color pixels. In one embodiment, buried wells are disposed beneath the second and third pluralities of color pixels but substantially not below the first plurality of color pixels.

    摘要翻译： 彩色像素阵列包括第一，第二和第三多个彩色像素，每个彩色像素包括设置在第一半导体层内的感光区域。 在一个实施例中，包括深掺杂区域的第二半导体层设置在第一半导体层的下方。 深掺杂区域各自驻留在第一多个彩色像素中的对应的一个之下，但基本上不在第二和第三多个彩色像素的下方。 在一个实施例中，掩埋阱设置在第二和第三多个彩色像素之下，但基本上不在第一多个彩色像素的下方。

    Method and system of semiconductor fabrication fault analysis
    24.
    发明授权
    Method and system of semiconductor fabrication fault analysis 失效
    半导体制造故障分析方法与系统

    公开(公告)号：US07031860B2

    公开(公告)日：2006-04-18

    申请号：US10947090

    申请日：2004-09-22

    申请人： Shih-Tsung Liang ,  Hsin-Chih Tai

    发明人： Shih-Tsung Liang ,  Hsin-Chih Tai

    IPC分类号： G01N37/00 ,  G06F19/00

    CPC分类号： G05B19/41875 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22

    摘要： A system and method for semiconductor fabrication fault analysis. The storage device stores test records. The program module receives a study lot identity, acquires suspect fabrication issues corresponding to the study lot identity, acquires a number of comparative wafer lot identities processed by the same fabrication tool and fabrication recipe for each fabrication issue, defines the comparative wafer lot identities having the same failed cluster groups as similar failed lot identities, calculates a similarity score for each similar failed lot identity, calculates a causal score according to the similarity scores for each suspect fabrication issue, and arranges the suspect fabrication issues according to causal scores thereof.

    摘要翻译： 一种用于半导体制造故障分析的系统和方法。 存储设备存储测试记录。 程序模块收到学习证件身份，获取与学习签名相对应的可疑制造问题，获取由相同制造工具处理的多个比较晶片批次标识和每个制造问题的制造配方，定义具有 相同的失败的群集群，类似失败的批次身份，计算每个类似失败的批次身份的相似性得分，根据每个嫌疑人制作问题的相似性得分计算因果分数，并根据其因果分数排列可疑制作问题。

    IMAGE SENSOR WITH SEGMENTED ETCH STOP LAYER
    26.
    发明申请
    IMAGE SENSOR WITH SEGMENTED ETCH STOP LAYER 审中-公开
    图像传感器与分离的蚀刻停止层

    公开(公告)号：US20130292751A1

    公开(公告)日：2013-11-07

    申请号：US13462545

    申请日：2012-05-02

    申请人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

    发明人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai

    IPC分类号： H01L31/113 ,  H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14636 ,  H01L27/14643 ,  H01L27/14689

    摘要： An apparatus includes a semiconductor layer having an array of pixels arranged therein. A passivation layer is disposed proximate to the semiconductor layer over the array of pixels. A segmented etch stop layer including a plurality of etch stop layer segments is disposed proximate to the passivation layer over the array of pixels. Boundaries between each one of the plurality of etch stop layer segments are aligned with boundaries between pixels in the array of pixels.

    摘要翻译： 一种装置包括其中布置有像素阵列的半导体层。 钝化层设置在像素阵列附近的半导体层附近。 包括多个蚀刻停止层段的分段蚀刻停止层设置在像素阵列附近的钝化层附近。 多个蚀刻停止层段中的每一个之间的边界与像素阵列中的像素之间的边界对准。

    Methods of forming varying depth trenches in semiconductor devices
    27.
    发明授权
    Methods of forming varying depth trenches in semiconductor devices 有权
    在半导体器件中形成不同深度沟槽的方法

    公开(公告)号：US08575035B2

    公开(公告)日：2013-11-05

    申请号：US13402674

    申请日：2012-02-22

    申请人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    发明人： Gang Chen ,  Duli Mao ,  Hsin-Chih Tai ,  Howard E. Rhodes

    IPC分类号： H01L31/02 ,  H01L21/76

    CPC分类号： H01L21/76229 ,  H01L27/1463 ,  H01L27/14689

    摘要： A method of forming trenches in a semiconductor device includes forming an etchant barrier layer above a first portion of a semiconductor layer. A first trench is etched in a second portion of the semiconductor layer using a first etchant. The second portion of the semiconductor layer is not disposed underneath the etchant barrier layer. The etchant barrier layer is etched through using a second etchant that does not substantially etch the semiconductor layer. A second trench is etched in the first portion of the semiconductor layer using a third etchant. The third etchant also extends a depth of the first trench.

    摘要翻译： 在半导体器件中形成沟槽的方法包括在半导体层的第一部分上方形成蚀刻剂阻挡层。 使用第一蚀刻剂在半导体层的第二部分中蚀刻第一沟槽。 半导体层的第二部分不设置在蚀刻剂阻挡层下方。 通过使用不基本上蚀刻半导体层的第二蚀刻剂蚀刻蚀刻剂阻挡层。 使用第三蚀刻剂在半导体层的第一部分中蚀刻第二沟槽。 第三蚀刻剂还延伸第一沟槽的深度。

    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS
    28.
    发明申请
    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS 有权
    背光照明成像传感器中的侧光

    公开(公告)号：US20130207212A1

    公开(公告)日：2013-08-15

    申请号：US13370085

    申请日：2012-02-09

    申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC分类号： H01L31/0216 ,  H01L31/18

    CPC分类号： H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    摘要： A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

    摘要翻译： 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外侧的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

    PREVENTION OF LIGHT LEAKAGE IN BACKSIDE ILLUMINATED IMAGING SENSORS
    29.
    发明申请
    PREVENTION OF LIGHT LEAKAGE IN BACKSIDE ILLUMINATED IMAGING SENSORS 审中-公开
    防止背光照明成像传感器中的光泄漏

    公开(公告)号：US20130200396A1

    公开(公告)日：2013-08-08

    申请号：US13367162

    申请日：2012-02-06

    申请人： Wei Zheng ,  Vincent Venezia ,  Hsin-Chih Tai

    发明人： Wei Zheng ,  Vincent Venezia ,  Hsin-Chih Tai

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14623 ,  H01L27/1464

    摘要： An apparatus includes a semiconductor layer, a dielectric layer, and a light prevention structure. The semiconductor layer has a front surface and a backside surface. The semiconductor layer includes a light sensing element and a periphery circuit region containing a light emitting element and not containing the light sensing element. The dielectric layer contacts at least a portion of the backside surface of the semiconductor layer. At least a portion of the light prevention structure is disposed between the light sensing element and the light emitting element. The light prevention structure is positioned to prevent light emitted by the light emitting element from reaching the light sensing element.

    摘要翻译： 一种装置包括半导体层，电介质层和防光结构。 半导体层具有前表面和背面。 半导体层包括光检测元件和包含发光元件并且不包含光感测元件的外围电路区域。 电介质层与半导体层的背面的至少一部分接触。 防光结构的至少一部分设置在感光元件和发光元件之间。 防光结构被定位成防止由发光元件发射的光到达感光元件。

    Image Sensor with Reduced Noiseby Blocking Nitridation Over Selected Areas
    30.
    发明申请
    Image Sensor with Reduced Noiseby Blocking Nitridation Over Selected Areas 审中-公开
    具有降低噪声的图像传感器，通过在所选区域阻挡氮化

    公开(公告)号：US20130056809A1

    公开(公告)日：2013-03-07

    申请号：US13227258

    申请日：2011-09-07

    申请人： Duli Mao ,  Hsin Chih Tai ,  Vincent Venezia ,  Howard Rhodes

    发明人： Duli Mao ,  Hsin Chih Tai ,  Vincent Venezia ,  Howard Rhodes

    IPC分类号： H01L31/113 ,  H01L31/18

    CPC分类号： H01L27/14614 ,  H01L27/1464 ,  H01L27/14689

    摘要： An image sensor is described in which the imaging pixels have reduced noise by blocking nitridation in selected areas. In one example, an imaging pixel of an image sensor includes a photodiode region to accumulate an image charge in response to incident light, a first transistor having a gate oxide layer, the gate oxide layer having a first level of nitridation, and a second transistor having a gate oxide layer, the gate oxide layer having a second level of nitridation that is higher than the first level of nitridation.

    摘要翻译： 描述了一种图像传感器，其中成像像素通过在选定的区域中阻挡氮化而具有降低的噪声。 在一个示例中，图像传感器的成像像素包括：光电二极管区域，用于响应于入射光积累图像电荷;第一晶体管，具有栅极氧化层;栅极氧化物层具有第一级氮化层;以及第二晶体管 具有栅极氧化层，所述栅极氧化物层具有高于所述第一级氮化的第二级氮化层。