摘要:
Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
摘要:
A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
摘要:
Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer.
摘要:
Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.
摘要:
Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
摘要:
Embodiments of a pixel including a photosensitive region formed in a surface of a substrate and an overflow drain formed in the surface of the substrate at a distance from the photosensitive area, an electrical bias of the overflow drain being variable and controllable. Embodiments of a pixel including a photosensitive region formed in a surface of a substrate, a source-follower transistor coupled to the photosensitive region, the source-follower transistor including a drain, and a doped bridge coupling the photosensitive region to the drain of the source-follower transistor.
摘要:
A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.
摘要:
Embodiments of a semiconductor device that includes a semiconductor substrate and a cavity disposed in the semiconductor substrate that extends at least from a first side of the semiconductor substrate to a second side of the semiconductor substrate. The semiconductor device also includes an insulation layer disposed over the first side of the semiconductor substrate and coating sidewalls of the cavity. A conductive layer including a bonding pad is disposed over the insulation layer. The conductive layer extends into the cavity and connects to a metal stack disposed below the second side of the semiconductor substrate. A through silicon via pad is disposed below the second side of the semiconductor substrate and connected to the metal stack. The through silicon via pad is position to accept a through silicon via.
摘要:
Embodiments of an apparatus comprising a pixel array comprising a plurality of macropixels. Each macropixel includes a pair of first pixels each including a color filter for a first color, the first color being one to which pixels are most sensitive, a second pixel including a color filter for a second color, the second color being one to which the pixels are least sensitive and a third pixel including a color filter for a third color, the third color being one to which pixels have a sensitivity between the least sensitive and the most sensitive, wherein the first pixels each occupy a greater proportion of the light-collection area of the macropixel than either the second pixel or the third pixel. Corresponding process and system embodiments are disclosed and claimed.
摘要:
A backside illuminated (“BSI”) complementary metal-oxide semiconductor (“CMOS”) image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.