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21.
公开(公告)号:US20190256969A1
公开(公告)日:2019-08-22
申请号:US16261514
申请日:2019-01-29
Applicant: IonQuest Corp.
Inventor: Roman CHISTYAKOV , Bassam Hanna ABRAHAM
IPC: C23C14/35 , C23C14/34 , C23C14/00 , C23C14/06 , C23C14/14 , H01J37/34 , H01J37/32 , H01L21/768 , H01L21/285 , H01L23/532 , H01L23/522
Abstract: A magnetically enhanced HDP-CVD plasma source includes a hollow cathode target and an anode. The anode and cathode form a gap. A cathode target magnet assembly forms magnetic field lines that are substantially perpendicular to a cathode target surface. The gap magnet assembly forms a cusp magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross a pole piece electrode positioned in the gap. This pole piece is isolated from ground and can be connected with a voltage power supply. The pole piece can have a negative, positive, or floating electric potential. The plasma source can be configured to generate volume discharge. The gap size prohibits generation of plasma discharge in the gap. By controlling the duration, value and a sign of the electric potential on the pole piece, the plasma ionization can be controlled. The magnetically enhanced HDP-CVD source can also be used for chemically enhanced ionized physical vapor deposition (CE-IPVD). Gas flows through the gap between hollow cathode and anode. The cathode target is inductively grounded, and the substrate is periodically inductively grounded.
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公开(公告)号:US20190249293A1
公开(公告)日:2019-08-15
申请号:US16261516
申请日:2019-01-29
Applicant: IonQuest Corp.
Inventor: Bassam Hanna ABRAHAM , Roman CHISTYAKOV
IPC: C23C14/35 , C23C14/34 , C23C14/00 , C23C14/06 , C23C14/14 , H01J37/34 , H01J37/32 , H01L21/768 , H01L21/285 , H01L23/532 , H01L23/522
CPC classification number: C23C14/354 , C23C14/0057 , C23C14/0605 , C23C14/14 , C23C14/345 , C23C14/3485 , C23C14/35 , H01J37/321 , H01J37/32825 , H01J37/3405 , H01J37/3417 , H01J37/3426 , H01J37/3435 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J37/3464 , H01J37/3467 , H01L21/2855 , H01L21/76843 , H01L21/76871 , H01L21/76879 , H01L21/76882 , H01L23/5226 , H01L23/53238
Abstract: A magnetically enhanced low temperature high density plasma chemical vapor deposition (LT-HDP-CVD) source has a hollow cathode target and an anode, which form a gap. A cathode target magnet assembly forms magnetic field lines substantially perpendicular to the cathode surface. A gap magnet assembly forms a magnetic field in the gap that is coupled with the cathode target magnetic field. The magnetic field lines cross the pole piece electrode positioned in the gap. The pole piece is isolated from ground and can be connected to a voltage power supply. The pole piece can have negative, positive, floating, or RF electrical potentials. By controlling the duration, value, and sign of the electric potential on the pole piece, plasma ionization can be controlled. Feed gas flows through the gap between the hollow cathode and anode. The cathode can be connected to a pulse power or RF power supply, or cathode can be connected to both power supplies. The cathode target and substrate can be inductively grounded.
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