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25 条记录 (耗时 0.011 秒)

    SEMICONDUCTOR DEVICE
    22.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20120025203A1

    公开(公告)日：2012-02-02

    申请号：US13194396

    申请日：2011-07-29

    申请人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui

    发明人： Ken Nakata ,  Isao Makabe ,  Keiichi Yui

    IPC分类号： H01L29/22

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/207

    摘要： A semiconductor device includes a first GaN layer formed on a substrate, the first GaN layer including a transition metal and an impurity under constant concentration, the impurity forming a deeper energy level in the first GaN layer than energy level formed by the transition metal, a second GaN layer formed on the first GaN layer, the second GaN layer including the transition metal and the impurity under inclined concentration, an inclined direction of the transition metal being same as an inclined direction of the impurity, and an electron supply layer formed on the second GaN layer.

    摘要翻译： 半导体器件包括形成在衬底上的第一GaN层，第一GaN层包括过渡金属和恒定浓度的杂质，杂质在第一GaN层中形成的能级高于由过渡金属形成的能级， 形成在第一GaN层上的第二GaN层，包含过渡金属的第二GaN层和倾斜浓度的杂质，过渡金属的倾斜方向与杂质的倾斜方向相同，以及形成在第一GaN层上的电子供给层 第二GaN层。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    24.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20120003821A1

    公开(公告)日：2012-01-05

    申请号：US13172403

    申请日：2011-06-29

    申请人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    发明人： Keiichi Yui ,  Akira Furuya ,  Ken Nakata ,  Takamitsu Kitamura ,  Isao Makabe

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  C30B25/14 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02661

    摘要： A method for fabricating a semiconductor device includes performing thermal cleaning for a surface of a silicon substrate in an atmosphere including hydrogen under a condition that a thermal cleaning temperature is higher than or equal to 700° C. and is lower than or equal to 1060° C., and a thermal cleaning time is longer than or equal to 5 minutes and is shorter than or equal to 15 minutes; forming a first AlN layer on the substrate with a first V/III source ratio, the forming of the first AlN layer including supplying an Al source to the surface of the substrate without supplying a N source, and supplying both the Al source and the N source; forming a second AlN layer on the first AlN layer with a second V/III source ratio that is greater than the first ratio; and forming a GaN-based semiconductor layer on the second AlN layer.

    摘要翻译： 一种制造半导体器件的方法包括在热清洁温度高于或等于700℃且低于或等于1060°的条件下，在包括氢的气氛中对硅衬底的表面进行热清洗 热清洗时间长于或等于5分钟，并且短于或等于15分钟; 在所述衬底上以第一V / III源比形成第一AlN层，所述第一AlN层的形成包括在不提供N源的情况下向所述衬底的表面提供Al源，并且将Al源和N 资源; 在第一AlN层上以大于第一比例的第二V / III源比形成第二AlN层; 以及在所述第二AlN层上形成GaN基半导体层。

    SEMICONDUCTOR DEVICE
    25.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100243989A1

    公开(公告)日：2010-09-30

    申请号：US12731728

    申请日：2010-03-25

    申请人： Isao Makabe ,  Ken Nakata

    发明人： Isao Makabe ,  Ken Nakata

    IPC分类号： H01L29/778

    CPC分类号： H01L21/02507 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/1083 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7787

    摘要： A semiconductor device includes a substrate, a superlattice buffer layer that is formed on the substrate and is composed of first AlxGa1-xN layers and second AlxGa1-xN layers having an Al composition greater than that of the first AlxGa1-xN layers, the first and second AlxGa1-xN layers being alternately stacked one by one, both the Al compositions of the first and second AlxGa1-xN layers being greater than 0.3, and a difference in Al composition between the first and second AlxGa1-xN layers being greater than 0 and smaller than 0.6.

    摘要翻译： 半导体器件包括衬底，超晶格缓冲层，其形成在衬底上并且由Al x Ga 1-x N层和Al组分大于第一Al x Ga 1-x N层的Al组分构成的第一Al x Ga 1-x N层， 第二Al x Ga 1-x N层交替层叠，第一和第二Al x Ga 1-x N层的Al组成都大于0.3，第一Al x Ga 1-x N层之间的Al组成差异大于0， 小于0.6。