公开(公告)号：US5027243A

公开(公告)日：1991-06-25

申请号：US441689

申请日：1989-11-27

Applicant: Hardayal S. Gill ,  James A. Brug

Inventor： Hardayal S. Gill ,  James A. Brug

IPC: G11B5/00 ,  G11B5/39 ,  G11B5/465

CPC classification number: G11B5/3954 ,  G11B5/399 ,  G11B5/465 ,  G11B2005/0016

Abstract: A a dual element magnetoresistive sensor that uses the longitudinal field produced by the sense/bias currents to initialize the elements into a stable antiparallel state. The dual element magnetoresistive sensor comprises two magnetoresistive elements having first and second conductors coupled thereto. The first and second conductors are oriented in the same direction as the magnetoresistive elements in their contact areas. A third conductor is disposed between and coupled to the two magnetoresistive elements at their opposite ends. The third conductor is oriented transverse to the directions of the first and second sensor elements, and is adapted to conduct current therethrough in a direction transverse to the currents conducted by the first and second conductors. Currents conducted by all three conductors self-initialize the magnetoresistive elements into a single domain state. Also, the current flowing in the third conductor creates an anti-parallel longitudinal field in the two sensor elements that is oriented in the same direction as closure fields present in the magnetoresistive elements. These fields ensure that a single domain state is produced in the magnetoresistive elements. An alternative design for the third conductor employs one conductor portion that provides a current distribution that initializes the sensor. This current distribution initializes the sensor. Another conductor portion is used during reading and provides a current distribution that is similar to the distribution produced by the first and second conductors. This ensures that the across-the-track response is symmetric. A small fraction of the sense current flows in the initializing conductor portion to provide stabilization during reading.

Abstract translation: 使用由感测/偏置电流产生的纵向场的双元件磁阻传感器将元件初始化成稳定的反平行状态。 双元件磁阻传感器包括具有耦合到其上的第一和第二导体的两个磁阻元件。 第一和第二导体在与其接触区域中的磁阻元件相同的方向上取向。 第三导体设置在两个磁阻元件的两端处并耦合到两个磁阻元件。 第三导体横向于第一和第二传感器元件的方向定向，并且适于在横向于由第一和第二导体传导的电流的方向上传导电流。 由三个导体进行的电流自磁化磁阻元件到单个域状态。 此外，流过第三导体的电流在两个传感器元件中产生反平行的纵向场，其被定向成与磁阻元件中存在的闭合场相同的方向。 这些场确保在磁阻元件中产生单域状态。 第三导体的替代设计采用一个导体部分，其提供初始化传感器的电流分布。 该电流分布初始化传感器。 在读取期间使用另一个导体部分，并提供类似于由第一和第二导体产生的分布的电流分布。 这确保跨轨道响应是对称的。 感测电流的一小部分在初始化导体部分中流动，以在读取期间提供稳定性。

公开(公告)号：US06607924B2

公开(公告)日：2003-08-19

申请号：US09871387

申请日：2001-05-31

Applicant: James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

Inventor： James A. Brug ,  Lung T. Tran ,  Thomas C. Anthony ,  Manoj K. Bhattacharyya ,  Janice Nickel

IPC: H01L2100

CPC classification number: H01L43/12 ,  B82Y10/00 ,  G11C11/15 ,  H01L27/224

Abstract: A solid-state memory including an array of magnetic storage cells and a set of conductors. The process steps that pattern the conductors also patterns the magnetic layers in the magnetic storage cells thereby avoiding the need to employ precise alignment between pattern masks.

公开(公告)号：US06259644B1

公开(公告)日：2001-07-10

申请号：US09564308

申请日：2000-05-03

Applicant: Lung T Tran ,  Frederick A Perner ,  James A Brug

Inventor： Lung T Tran ,  Frederick A Perner ,  James A Brug

IPC: G11C702

CPC classification number: B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  H03F1/304 ,  H03F3/45479 ,  H03F3/45771 ,  H03F2203/45048 ,  H03F2203/45291 ,  H03F2203/45342 ,  H03F2203/45624 ,  H03F2203/45726

Abstract: An equal potential may be applied to a selected bit line and unselected bit lines during a read operation on a memory cell in a resistive cross point array. In the alternative, an equal potential may be applied to the selected bit line and unselected word lines.

Abstract translation: 在电阻交叉点阵列中的存储单元的读取操作期间，可以将相等的电位施加到所选位线和未选位线。 在替代方案中，可以将相等的电位施加到所选择的位线和未选择的字线。

公开(公告)号：US6111783A

公开(公告)日：2000-08-29

申请号：US334485

申请日：1999-06-16

Applicant: Lung T. Tran ,  James A. Brug

Inventor： Lung T. Tran ,  James A. Brug

IPC: G11C11/15 ,  G11C11/14

CPC classification number: G11C11/15

Abstract: Data is written to a memory cell of a Magnetic Random Access Memory ("MRAM") device by supplying currents having substantially unequal magnitudes to word and bit lines crossing that memory cell. The substantially higher magnitude current may be supplied to the word lines.

Abstract translation: 通过向与该存储单元相交的字和位线提供具有基本上不相等幅度的电流将数据写入磁随机存取存储器（“MRAM”）器件的存储单元。 可以将大幅度更大的电流提供给字线。

公开(公告)号：US5307226A

公开(公告)日：1994-04-26

申请号：US894415

申请日：1992-06-05

Applicant: James A. Brug ,  Thomas C. Anthony ,  Victor W. Hesterman ,  Steven Naberhuis

Inventor： James A. Brug ,  Thomas C. Anthony ,  Victor W. Hesterman ,  Steven Naberhuis

IPC: G01D5/245 ,  G01R33/09 ,  G11B5/39 ,  H01L43/08 ,  G11B5/127

CPC classification number: G11B5/3932 ,  G11B5/3903 ,  G11B5/3954

Abstract: A magnetoresistive transducer includes at least one magnetoresistive element having a transverse easy axis. The use of a transverse easy axis prevents magnetic domains from forming in the magnetoresistive elements and results in a noise-free device. Various techniques for producing a transverse easy axis include the use of stress, and a magneto strictive material, during the formation of the element to orient the anisotropy of the element transverse to orient the anisotropy of the element transverse to the element, formation of the element in the presence of a magnetic field, high temperature anneal of the element, or any other method of forming the element with a prebiased state.

Abstract translation: 磁阻换能器包括至少一个具有横向容易轴的磁阻元件。 使用横向易轴防止在磁阻元件中形成磁畴，并导致无噪声的装置。 用于产生横向容易轴的各种技术包括在形成元件期间使用应力和磁致伸缩材料，以横向定向元件的各向异性以定向横向于元件的元件的各向异性，元件的形成 在存在磁场的情况下，元件的高温退火，或以预偏置状态形成元件的任何其它方法。

公开(公告)号：US5296987A

公开(公告)日：1994-03-22

申请号：US894389

申请日：1992-06-05

Applicant: Thomas C. Anthony ,  James A. Brug

Inventor： Thomas C. Anthony ,  James A. Brug

IPC: G11B5/39 ,  G11B5/127

CPC classification number: G11B5/3906 ,  G11B5/3954

Abstract: A method for reducing Barkhausen noise in dual stripe magnetoresistive recording heads. The topography of the bottom conductor is controlled, specifically the conductor sidewall angle at the edge of the track is defined to be less than 45.degree. from the substrate plane. Restricting the conductor sidewall profile in this manner eliminates sources of magnetic domain nucleation.

Abstract translation: 一种用于减少双条磁阻记录头中的巴克豪森噪声的方法。 控制底部导体的形貌，具体来说，轨道边缘处的导体侧壁角度定义为距离衬底平面小于45度。 以这种方式限制导体侧壁轮廓消除了磁畴成核的来源。