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21.发明申请公开(公告)号：US20050286585A1
公开(公告)日：2005-12-29
申请号：US11026495
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
CPC分类号： H01S5/0264 , H01S5/0422 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子注入来降低光致发光效率。
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公开(公告)号：US20050286584A1
公开(公告)日：2005-12-29
申请号：US11026355
申请日：2004-12-30
申请人： James Guenter , Jimmy Tatum , James Biard
发明人： James Guenter , Jimmy Tatum , James Biard
CPC分类号： H01S5/0264 , H01S5/18308 , H01S5/18313 , H01S5/1835 , H01S5/18358 , H01S5/2022 , H01S5/2027 , H01S5/3095 , H01S2301/02
摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.
摘要翻译： 一种降低激光器有源区自发发射效应的光学结构。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为对自发辐射更为不透明 ，并使用离子植入物来降低光致发光效率。
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公开(公告)号：US20050024076A1
公开(公告)日：2005-02-03
申请号：US10486672
申请日：2002-08-12
CPC分类号： G01R31/275 , G01R31/2831 , G01R31/2863 , G01R31/2872 , G01R31/2874 , G01R31/2884 , H01S5/0021 , H01S5/005 , H01S5/423
摘要： Systems for wafer level burn-in (WLBI) of semiconductor devices (210, 215) are presented. Systems having at least two electrodes for the application of electrical bias and/or thermal power on each side of a wafer (100) having back (105) and front (110) electrical contacts for semiconductor devices borne by the wafer (100) is described. Methods of wafer level burnin using the system are also described. Furthermore, a pliable conductive layer (220) is described for supplying pins or contacts (110) on device side of a wafer with electrical contact. The pliable conductive layer (220) can allow for an effective series R in each of the devices borne by the wafer (100), thus helping keep voltage bias level consistent. The pliable conductive layer can also prevent damage to a wafer when pressure is applied to it by chamber contacts (210, 215) and pressure onto surfaces of the wafer (100) during burn-in operations. A cooling system (660) is also described for enabling the application of a uniform temperature to the wafer (100) undergoing burn-in.
摘要翻译： 提出了用于半导体器件（210,215）的晶片级老化（WLBI）的系统。 描述具有至少两个电极的系统，用于在具有由晶片（100）承载的半导体器件的背面（105）和前（110）电触点的晶片（100）的每一侧上施加电偏压和/或热功率。 。 还描述了使用该系统的晶片级烧伤的方法。 此外，描述了一种柔性导电层（220），用于在具有电接触的晶片的器件侧上提供引脚或触点（110）。 柔性导电层（220）可以允许由晶片（100）承载的每个器件中的有效串联R，从而有助于保持电压偏置电平一致。 柔性导电层还可以防止在老化操作期间通过室接触（210,215）向其施加压力和施加到晶片（100）的表面上的压力时损坏晶片。 还描述了一种冷却系统（660），用于使得能够对经历老化的晶片（100）施加均匀的温度。
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