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    Memristors with a switching layer comprising a composite of multiple phases
    22.
    发明授权
    Memristors with a switching layer comprising a composite of multiple phases 有权
    具有包括多相复合材料的开关层的忆阻器

    公开(公告)号：US08415652B2

    公开(公告)日：2013-04-09

    申请号：US12819763

    申请日：2010-06-21

    申请人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    发明人： Jianhua Yang ,  Gilberto Ribeiro ,  R. Stanley Williams

    IPC分类号： H01L29/02

    CPC分类号： H01L27/24 ,  G11C13/0007 ,  G11C2213/52 ,  H01L45/04 ,  H01L45/145

    摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.

    摘要翻译： 公开了具有包括多相复合的开关层的忆阻器。 忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相， 在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。 还公开了制造忆阻器和使用忆阻器的横杆的方法。

    NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES
    23.
    发明申请
    NANOSCALE SWITCHING DEVICES WITH PARTIALLY OXIDIZED ELECTRODES 有权
    具有部分氧化电极的纳米开关器件

    公开(公告)号：US20130026440A1

    公开(公告)日：2013-01-31

    申请号：US13636814

    申请日：2010-04-19

    申请人： Jianhua Yang ,  Gilberto Ribeiro ,  Stanley William

    发明人： Jianhua Yang ,  Gilberto Ribeiro ,  Stanley William

    IPC分类号： H01L27/24 ,  H01L45/00

    CPC分类号： H01L45/08 ,  H01L27/2463 ,  H01L45/1253 ,  H01L45/146 ,  Y10S438/90

    摘要： A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

    摘要翻译： 提供了纳米尺度的开关装置。 该装置包括：纳米级宽度的第一电极; 纳米级宽度的第二电极; 有源区域设置在第一和第二电极之间，有源区域具有非导电部分，其包括电子半导体或名义绝缘以及能够承载一种掺杂剂并在电场下传输掺杂剂的弱离子导体开关材料，以及 用作掺杂剂的源或汇的源部分; 以及形成在第一电极之间，第一电极和有源区之间或形成在第二电极上的第二电极和有源区之间的氧化物层。 还提供了包括多个纳米级切换装置的交叉开关阵列。 还提供了制造至少一个纳米级切换装置的方法。

    Guided mode resonator based Raman enhancement apparatus
    24.
    发明授权
    Guided mode resonator based Raman enhancement apparatus 有权
    引导型谐振器型拉曼增强器

    公开(公告)号：US08330952B2

    公开(公告)日：2012-12-11

    申请号：US12625304

    申请日：2009-11-24

    申请人： Wei Wu ,  Jingjing Li ,  Qiangfei Xia ,  Jianhua Yang

    发明人： Wei Wu ,  Jingjing Li ,  Qiangfei Xia ,  Jianhua Yang

    IPC分类号： G01J3/44

    CPC分类号： G01J3/44 ,  G01N21/658 ,  G02B2006/0325 ,  G02B2006/12107

    摘要： A system for performing Raman spectroscopy comprises a waveguide layer configured with at least one array of features, the at least one array of features being configured to provide guided-mode resonance for at least one wavelength of electromagnetic radiation; and at least one fluid channel disposed in the waveguide layer. An analyte sensor comprises an electromagnetic radiation source configured to emit a range of wavelengths of electromagnetic radiation, the system for performing Raman spectroscopy, and at least one photodetector configured to detect Raman scattered light.

    摘要翻译： 用于执行拉曼光谱的系统包括配置有至少一个特征阵列的波导层，所述至少一个特征阵列被配置为为至少一个波长的电磁辐射提供导模谐振; 以及设置在波导层中的至少一个流体通道。 分析物传感器包括被配置为发射电磁辐射波长范围的电磁辐射源，用于执行拉曼光谱的系统，以及配置成检测拉曼散射光的至少一个光电检测器。

    MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS
    27.
    发明申请
    MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS 有权
    具有电极金属储存器的电容器用于DOPANTS

    公开(公告)号：US20120074372A1

    公开(公告)日：2012-03-29

    申请号：US12893825

    申请日：2010-09-29

    申请人： Jianhua Yang ,  Wei Yi ,  Michael Josef Stuke ,  Shih-Yuan Wang

    发明人： Jianhua Yang ,  Wei Yi ,  Michael Josef Stuke ,  Shih-Yuan Wang

    IPC分类号： H01L45/00 ,  H01L21/02

    CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1658

    摘要： A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

    摘要翻译： 忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。 有源区域具有由电场引起的非导电部分和掺杂剂源部分。 非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。 非导电部分与第一电极接触，并且掺杂剂源部分与第二电极接触。 第二电极包括用于掺杂剂的金属储存器。 还提供了包括多个纳米级切换装置的交叉开关阵列。 还提供了制造至少一个纳米级切换装置的方法。

    MEMORY RESISTOR HAVING PLURAL DIFFERENT ACTIVE MATERIALS
    29.
    发明申请
    MEMORY RESISTOR HAVING PLURAL DIFFERENT ACTIVE MATERIALS 有权
    具有多种不同活性材料的记忆电阻

    公开(公告)号：US20120026776A1

    公开(公告)日：2012-02-02

    申请号：US12847874

    申请日：2010-07-30

    申请人： Jianhua Yang ,  Minxian Max Zhang ,  R. Stanley Williams

    发明人： Jianhua Yang ,  Minxian Max Zhang ,  R. Stanley Williams

    IPC分类号： G11C11/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/55 ,  G11C2213/56 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146

    摘要： Methods and means related to memory resistors are provided. A memristor includes at least two different active materials disposed between a pair of electrodes. The active materials are selected to exhibit respective and opposite changes in electrical resistance in response to changes in oxygen ion content. The active materials are subject to oxygen ion reconfiguration under the influence of an applied electric field. An electrical resistance of the memristor is thus adjustable by way of applied programming voltages and is non-volatile between programming events.

    摘要翻译： 提供了与存储电阻相关的方法和方法。 忆阻器包括设置在一对电极之间的至少两种不同的活性材料。 选择活性材料以响应于氧离子含量的变化表现出相应且相反的电阻变化。 活性物质在施加电场的影响下进行氧离子重构。 因此，忆阻器的电阻可以通过施加的编程电压进行调节，并且在编程事件之间是非易失性的。