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    HIGH-RELIABILITY HIGH-SPEED MEMRISTOR
    2.
    发明申请
    HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 有权
    高可靠性高速电容器

    公开(公告)号：US20140112059A1

    公开(公告)日：2014-04-24

    申请号：US14127873

    申请日：2011-06-24

    申请人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R. Stanley Williams

    发明人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R. Stanley Williams

    IPC分类号： G11C13/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/55 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149

    摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

    摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入 或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。

    High-reliability high-speed memristor
    4.
    发明授权
    High-reliability high-speed memristor 有权
    高可靠性高速忆阻器

    公开(公告)号：US09165645B2

    公开(公告)日：2015-10-20

    申请号：US14127873

    申请日：2011-06-24

    申请人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R Stanley Williams

    发明人： Feng Miao ,  Jianhua Yang ,  John Paul Strachan ,  Wei Yi ,  Gilberto Medeiros Ribeiro ,  R Stanley Williams

    IPC分类号： G11C13/00 ,  H01L45/00

    CPC分类号： H01L45/08 ,  G11C13/0007 ,  G11C13/0011 ,  G11C2213/55 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/142 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/149

    摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.

    摘要翻译： 忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。 开关层包含导电通道和储存区。 导电通道具有可变浓度的移动离子的费米玻璃材料。 储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。 在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道 费米玻璃材料。

    MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS
    7.
    发明申请
    MEMRISTORS WITH AN ELECTRODE METAL RESERVOIR FOR DOPANTS 有权
    具有电极金属储存器的电容器用于DOPANTS

    公开(公告)号：US20120074372A1

    公开(公告)日：2012-03-29

    申请号：US12893825

    申请日：2010-09-29

    申请人： Jianhua Yang ,  Wei Yi ,  Michael Josef Stuke ,  Shih-Yuan Wang

    发明人： Jianhua Yang ,  Wei Yi ,  Michael Josef Stuke ,  Shih-Yuan Wang

    IPC分类号： H01L45/00 ,  H01L21/02

    CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1658

    摘要： A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

    摘要翻译： 忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。 有源区域具有由电场引起的非导电部分和掺杂剂源部分。 非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。 非导电部分与第一电极接触，并且掺杂剂源部分与第二电极接触。 第二电极包括用于掺杂剂的金属储存器。 还提供了包括多个纳米级切换装置的交叉开关阵列。 还提供了制造至少一个纳米级切换装置的方法。

    Memristors with an electrode metal reservoir for dopants
    8.
    发明授权
    Memristors with an electrode metal reservoir for dopants 有权
    具有用于掺杂剂的电极金属储存器的忆阻器

    公开(公告)号：US08325507B2

    公开(公告)日：2012-12-04

    申请号：US12893825

    申请日：2010-09-29

    申请人： Jianhua Yang ,  Wei Yi ,  Michael Josef Stuke ,  Shih-Yuan Wang

    发明人： Jianhua Yang ,  Wei Yi ,  Michael Josef Stuke ,  Shih-Yuan Wang

    IPC分类号： H01L29/8605 ,  H01L21/04 ,  G11C11/21

    CPC分类号： H01L45/1233 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1658

    摘要： A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.

    摘要翻译： 忆阻器包括纳米级宽度的第一电极; 纳米级宽度的第二电极; 以及设置在第一和第二电极之间的有源区。 有源区域具有由电场引起的非导电部分和掺杂剂源部分。 非导电部分包括电子半导体或标称绝缘材料和能够承载一种掺杂剂并在电场下输送掺杂剂的弱离子导体开关材料。 非导电部分与第一电极接触，并且掺杂剂源部分与第二电极接触。 第二电极包括用于掺杂剂的金属储存器。 还提供了包括多个纳米级切换装置的交叉开关阵列。 还提供了制造至少一个纳米级切换装置的方法。

    OSCILLATOR CIRCUITRY HAVING NEGATIVE DIFFERENTIAL RESISTANCE
    9.
    发明申请
    OSCILLATOR CIRCUITRY HAVING NEGATIVE DIFFERENTIAL RESISTANCE 有权
    具有负面差分电阻的振荡器电路

    公开(公告)号：US20120249252A1

    公开(公告)日：2012-10-04

    申请号：US13078595

    申请日：2011-04-01

    申请人： Julien Borghetti ,  Matthew D. Pickett ,  Gilberto Medelros Ribeiro ,  Wei Yi ,  Jianhua Yang ,  Minxian Max Zhang

    发明人： Julien Borghetti ,  Matthew D. Pickett ,  Gilberto Medelros Ribeiro ,  Wei Yi ,  Jianhua Yang ,  Minxian Max Zhang

    IPC分类号： H03B7/00

    CPC分类号： H03B7/00

    摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.

    摘要翻译： 提供了密切仿效生物神经反应的电路。 两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。 每个AMC的特征在于不同的电压相关时间常数。 当经受等于或大于阈值的电压时，该电路表现出电流的振荡。 可以根据施加到电路的电压来产生各种振荡波形。

    Nanoscale electronic device with barrier layers
    10.
    发明授权
    Nanoscale electronic device with barrier layers 有权
    具有阻隔层的纳米级电子器件

    公开(公告)号：US08766231B2

    公开(公告)日：2014-07-01

    申请号：US13041617

    申请日：2011-03-07

    申请人： Wei Yi ,  Jianhua Yang ,  Gilberto Medeiros Ribeiro

    发明人： Wei Yi ,  Jianhua Yang ,  Gilberto Medeiros Ribeiro

    IPC分类号： H01L45/00 ,  H01L21/62

    CPC分类号： H01L29/88 ,  B82Y10/00 ,  G11C13/0007 ,  G11C13/004 ,  G11C2213/12 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/54 ,  G11C2213/73 ,  G11C2213/81 ,  H01L27/1021 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/413 ,  H01L29/872

    摘要： On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example.

    摘要翻译： 本发明的一个例子是包括第一导电电极，第二导电电极和器件层的纳米级电子器件。 器件层包括在第一和第二导电电极之间的第一介电材料，其包括有效器件层，在第一导电电极和器件层之间的第一界面附近的第一势垒层和靠近第二导电电极的第二阻挡层 第二导电电极和器件层之间的界面。 本发明的第二个例子是包含第一个例子的纳米级电子器件的集成电路。