摘要:
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.
摘要:
An apparatus for adjusting a fixing pressure of an image forming apparatus is provided. The apparatus for adjusting the fixing pressure includes a pair of pressing members to rotatably support an axis of a first roller from both ends and to rotate about a hinge shaft to cause the first roller to press against a second roller, a pair of hinge cams to move the hinge shaft of the pair of pressing members in either of two directions, a driving unit to rotate the pair of hinge cams, and a control unit to control the driving unit to adjust the position of the hinge shaft.
摘要:
An image forming apparatus discharging a printed medium at a stable speed. A image developer affixes an image to a printing medium to form a printed medium and a transporting roller moves the printed medium toward a discharge roller. A one-way clutch driving the transport roller permits the discharge roller to assert control over the printed medium while the printed medium is in contact with the transport roller. The discharge roller is controllable to accelerate and decelerate the printed medium so that printed media are orderly stacked. The one way clutch permits the discharge roller and the transport roller to be spaced apart less than a length of the printed medium.
摘要:
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.
摘要:
Methods of fabricating semiconductor devices are provided. A substrate having active patterns and isolating layer patterns is prepared. Each of the isolating layer patterns has an upper surface higher than that of each of the active patterns. A spacer layer having a uniform thickness is formed on the substrate. The spacer layer is etched to form a spacer on a sidewall of each of the isolating layer patterns. A gate structure is formed on each of the active patterns. A selective epitaxial growth (SEG) process is performed on the active patterns having the gate structure to form isolated epitaxial layers that have upper surfaces higher than those of the isolating layer patterns, on the active patterns. Related semiconductor devices are also provided.
摘要:
Methods for fabricating a metal silicide layer and for fabricating a semiconductor device having such a metal silicide layer are provided wherein, in an embodiment, the method includes the steps of forming a metal layer on a substrate, performing a first thermal process on the substrate to allow the substrate and the metal layer to react with react other to form a first pre-metal silicide layer, removing an unreacted portion of the metal layer, and performing a second thermal process on the substrate to change the first pre-metal silicide layer into a second pre-metal silicide layer and then to melt the second pre-metal silicide layer to change the second pre-metal silicide layer into a metal silicide layer.
摘要:
An image forming apparatus includes a structure to lift or lower a paper loading tray without a separate drive source while preventing damage to constituent elements even under an abnormal situation in that excessive force is transmitted to the paper loading tray. The image forming apparatus includes a paper feeding cassette including a paper loading tray and a lifting member to lift or lower the paper loading tray, the paper feeding cassette being detachably coupled to the body, a power intermittence device to intermit power to be transmitted from a drive source provided in a body of the image forming apparatus to the lifting member, and a power transmission device to transmit the power transmitted through the power intermittence device to the lifting member by use of at least one worm gear. The image forming apparatus further includes a safety lever having one end to cooperate with a pickup roller assembly. The other end of the safety lever is pivotally rotatable between a first position where the other end of the safety lever restrains the power intermittence device so as not to transmit power to the lifting member and a second position where the other end of the safety lever is spaced apart from the power intermittence device so as to transmit the power to the lifting member.
摘要:
Methods of manufacturing a field effect transistor include forming a gate pattern on a substrate. A gate spacer is formed on a sidewall of the gate pattern. A first layer is formed from a surface of the substrate and contacting the gate spacer using a first selective epitaxial growth (SEG) process at a first temperature. A second layer is formed from a surface of the first layer and contacting the gate spacer using a second SEG process at a second temperature. The second temperature is lower than the first temperature. The first and second layers define elevated source/drain regions.
摘要:
An apparatus for adjusting a fixing pressure of an image forming apparatus is provided. The apparatus for adjusting the fixing pressure includes a pair of pressing members to rotatably support an axis of a first roller from both ends and to rotate about a hinge shaft to cause the first roller to press against a second roller, a pair of hinge cams to move the hinge shaft of the pair of pressing members in either of two directions, a driving unit to rotate the pair of hinge cams, and a control unit to control the driving unit to adjust the position of the hinge shaft.
摘要:
A scanning apparatus including a scanner main body provided with a document sheet stand; a scan unit being movably installed in the scanner main body for scanning an image of a document sheet placed on the document sheet stand; a driving unit to drive the scan unit; a locking unit to lock/unlock a motion of the scan unit; and a control section to control a driving of the locking unit in response to a scan signal. The scan unit is automatically locked/unlocked by the locking unit.