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    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS
    3.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES WITH METAL-SEMICONDUCTOR COMPOUND SOURCE/DRAIN CONTACT REGIONS 审中-公开
    用金属半导体复合源/漏极接触区制造半导体器件的方法

    公开(公告)号：US20100197089A1

    公开(公告)日：2010-08-05

    申请号：US12699491

    申请日：2010-02-03

    申请人： Jin-Bum Kim ,  Yu-Gyun Shin ,  Jung-Yun Won ,  In-Sun Jung ,  Jun-Ho Lee

    发明人： Jin-Bum Kim ,  Yu-Gyun Shin ,  Jung-Yun Won ,  In-Sun Jung ,  Jun-Ho Lee

    IPC分类号： H01L21/8238

    CPC分类号： H01L21/823814 ,  H01L21/28518 ,  H01L21/28525 ,  H01L21/2855 ,  H01L21/32053 ,  H01L21/76814 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76897 ,  H01L21/823871 ,  H01L23/53238 ,  H01L23/53266 ,  H01L29/665 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of fabricating semiconductor devices include forming a transistor on and/or in a semiconductor substrate, wherein the transistor includes a source/drain region and a gate pattern disposed on a channel region adjacent the source/drain region. An insulating layer is formed on the transistor and patterned to expose the source/drain region. A semiconductor source layer is formed on the exposed source/drain region and on an adjacent portion of the insulating layer. A metal source layer is formed on the semiconductor source layer. Annealing, is performed to form a first metal-semiconductor compound region on the source/drain region and a second metal-semiconductor compound region on the adjacent portion of the insulating layer. The first metal-semiconductor compound region may be thicker than the second metal-semiconductor compound region. The metal source layer may include a metal layer and a metal nitride barrier layer.

    摘要翻译： 制造半导体器件的方法包括在半导体衬底上和/或半导体衬底中形成晶体管，其中晶体管包括源极/漏极区域和设置在与源极/漏极区域相邻的沟道区域上的栅极图案。 在晶体管上形成绝缘层并图案化以暴露源/漏区域。 在暴露的源极/漏极区域和绝缘层的相邻部分上形成半导体源极层。 在半导体源层上形成金属源层。 进行退火以在源极/漏极区域上形成第一金属 - 半导体化合物区域和在绝缘层的相邻部分上形成第二金属 - 半导体化合物区域。 第一金属 - 半导体化合物区域可以比第二金属 - 半导体化合物区域厚。 金属源层可以包括金属层和金属氮化物阻挡层。

    Method of fabricating semiconductor device including a recessed channel
    4.
    发明授权
    Method of fabricating semiconductor device including a recessed channel 有权
    制造包括凹陷通道的半导体器件的方法

    公开(公告)号：US08835257B2

    公开(公告)日：2014-09-16

    申请号：US13312176

    申请日：2011-12-06

    申请人： Young-Pil Kim ,  Hyung-Ik Lee ,  Woo-Sung Jeon ,  Ki-Hong Kim ,  Jung-Yun Won ,  In-Sun Jung

    发明人： Young-Pil Kim ,  Hyung-Ik Lee ,  Woo-Sung Jeon ,  Ki-Hong Kim ,  Jung-Yun Won ,  In-Sun Jung

    IPC分类号： H01L21/762 ,  H01L27/105 ,  H01L27/108

    CPC分类号： H01L27/1052 ,  H01L21/76224 ,  H01L27/10876

    摘要： A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

    摘要翻译： 一种包括形成隔离沟槽的方法; 在隔离槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽，以露出第一衬垫，第二衬垫和绝缘材料，以及横跨有源区域的第二区域以暴露衬底的一部分，第一区域具有第一 侧壁具有平面形状，并且所述第二区域具有第二侧壁，所述第二侧壁具有凹形中心区域，使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL
    5.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL 有权
    制造包含通道的半导体器件的方法

    公开(公告)号：US20120231605A1

    公开(公告)日：2012-09-13

    申请号：US13312176

    申请日：2011-12-06

    申请人： Young-Pil KIM ,  Hyung-Ik Lee ,  Woo-Sung Jeon ,  Ki-Hong Kim ,  Jung-Yun Won ,  In-Sun Jung

    发明人： Young-Pil KIM ,  Hyung-Ik Lee ,  Woo-Sung Jeon ,  Ki-Hong Kim ,  Jung-Yun Won ,  In-Sun Jung

    IPC分类号： H01L21/762

    CPC分类号： H01L27/1052 ,  H01L21/76224 ,  H01L27/10876

    摘要： A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

    摘要翻译： 一种包括形成隔离沟槽的方法; 在隔离沟槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽，以露出第一衬垫，第二衬垫和绝缘材料，以及横跨有源区域的第二区域以暴露衬底的一部分，第一区域具有第一 侧壁具有平面形状，并且所述第二区域具有第二侧壁，所述第二侧壁具有凹形中心区域，使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

    Method of preparing and uses of cucurbituril devices
    6.
    发明授权
    Method of preparing and uses of cucurbituril devices 有权
    制备和使用葫芦素装置的方法

    公开(公告)号：US06639069B2

    公开(公告)日：2003-10-28

    申请号：US10092468

    申请日：2002-03-08

    申请人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

    发明人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

    IPC分类号： C07D24504

    CPC分类号： C07D245/04 ,  B01D53/34 ,  B01D53/50 ,  B01D53/56 ,  B01D53/62 ,  B01J31/0237 ,  B01J31/0247 ,  B01J31/0249 ,  B01J31/0251 ,  C02F1/58 ,  C07D487/22 ,  Y02C10/08

    摘要： Cucurbituril derivatives, their preparation methods and uses. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20, wherein the cucurbituril derivatives having the formula (1), where n=6, R1=H, R2=H and X=O, and n=5, R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.

    摘要翻译： 葫芦素衍生物，其制备方法和用途。 葫芦巴衍生物具有式（1）其中X是O，S或NH; R1和R2独立地选自氢，1〜30个碳原子的烷基，1〜30个碳原子的烯基，1〜30个碳原子的炔基，1〜30个碳原子的烷硫基，烷基羧基 1〜30个碳原子的基团，1〜30个碳原子的羟基烷基，1〜30个碳原子的烷基甲硅烷基，1〜30个碳原子的烷氧基，1〜30个碳原子的卤代烷基，硝基， 1至30个碳原子，胺基，1至30个碳原子的氨基烷基，5至30个碳原子的未取代环烷基，4至30个碳原子的杂原子环烷基，6至30个碳原子的未取代芳基， 和具有6-10个碳原子的杂原子的芳基; n为4〜20的整数，式中，n = 6，R1 = H，R2 = H，X = O，n = 5，R1 = CH3，R2 = H的葫芦巴脲衍生物 和X = O。 通过三种新方法之一容易地制备葫芦巴脲衍生物作为混合物，并且可以通过分级结晶从混合物中分离出每种葫芦巴脲衍生物。 具有式（1）的葫芦巴衍生物或其混合物非常适用于去除溶于水或废水中的染料和重金属离子。

    Uses of cucurbituril devices
    8.
    发明授权
    Uses of cucurbituril devices 有权
    使用葫芦素装置

    公开(公告)号：US07160466B2

    公开(公告)日：2007-01-09

    申请号：US10646722

    申请日：2003-08-25

    申请人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

    发明人： Kimoon Kim ,  Jaheon Kim ,  In-Sun Jung ,  Soo-Young Kim ,  Eunsung Lee ,  Jin-Koo Kang

    IPC分类号： C02F1/58 ,  C02F1/62

    CPC分类号： C07D245/04 ,  B01D53/34 ,  B01D53/50 ,  B01D53/56 ,  B01D53/62 ,  B01J31/0237 ,  B01J31/0247 ,  B01J31/0249 ,  B01J31/0251 ,  C02F1/58 ,  C07D487/22 ,  Y02C10/08

    摘要： Uses of cucurbituril derivatives are disclosed. The cucurbituril derivatives have the formula (1) where X is O, S or NH; R1 and R2 are independently selected from the group consisting of hydrogen, alkyl groups of 1 to 30 carbon atoms, alkenyl groups of 1 to 30 carbon atoms, alkynyl groups of 1 to 30 carbon atoms, alkylthio groups of 1 to 30 carbon atoms, alkylcarboxyl groups of 1 to 30 carbon atoms, hydroxyalkyl groups of 1 to 30 carbon atoms, alkylsilyl groups of 1 to 30 carbon atoms, alkoxy groups of 1 to 30 carbon atoms, haloalkyl groups of 1 to 30 carbon atoms, nitro group, alkylamine groups of 1 to 30 carbon atoms, amine group, aminoalkyl groups of 1 to 30 carbon atoms, unsubstituted cycloalkyl groups of 5 to 30 carbon atoms, cycloalkyl groups of 4 to 30 carbon atoms with hetero atoms, unsubstituted aryl groups of 6 to 30 carbon atoms, and aryl groups of 6 to 30 carbon atoms with hetero atoms; and n is an integer from 4 to 20 , wherein the cucurbituril derivatives having the formula (1), where n=6 , R1=H, R2=H and X=O, and n=5 , R1=CH3, R2=H and X=O, are excluded. The cucurbituril derivatives are easily prepared as a mixture by one of the three new methods, and each cucurbituril derivative can be separated from the mixture by fractional crystallization. The cucurbituril derivatives having the formula (1) or their mixtures are very useful in removing dyes and heavy metal ions dissolved in water or waste water.

    摘要翻译： 披露了葫芦素衍生物的用途。 葫芦巴衍生物具有式（1）其中X是O，S或NH; R 1和R 2独立地选自氢，碳原子数1〜30的烷基，碳原子数1〜30的烯基，炔基， 1至30个碳原子，1至30个碳原子的烷硫基，1至30个碳原子的烷基羧基，1至30个碳原子的羟基烷基，1至30个碳原子的烷基甲硅烷基，1至30个碳原子的烷氧基 1〜30个碳原子的卤代烷基，硝基，1〜30个碳原子的烷基胺基，1〜30个碳原子的氨基烷基，5〜30个碳原子的未取代环烷基，4-30个碳原子的环烷基 具有杂原子的碳原子，6至30个碳原子的未取代芳基和6至30个碳原子的芳基与杂原子; 并且n为4至20的整数，其中具有式（1）的葫芦脲衍生物，其中n = 6，R 1 = H，R 2 H = H和 X = O，n = 5，R 1 = CH 3，R 2 = H，X = O。 通过三种新方法之一容易地制备葫芦巴脲衍生物作为混合物，并且可以通过分级结晶从混合物中分离出每种葫芦巴脲衍生物。 具有式（1）的葫芦巴衍生物或其混合物非常适用于去除溶于水或废水中的染料和重金属离子。