公开(公告)号：US20090108232A1

公开(公告)日：2009-04-30

申请号：US10595942

申请日：2004-10-13

申请人： Makoto KUMATORIYA ,  Shinichiro CHIKU ,  Mikio GEHO ,  Takashi FUJII ,  Kenji KITAMURA ,  Shunji TAKEKAWA ,  Masaru NAKAMURA

发明人： Makoto KUMATORIYA ,  Shinichiro CHIKU ,  Mikio GEHO ,  Takashi FUJII ,  Kenji KITAMURA ,  Shunji TAKEKAWA ,  Masaru NAKAMURA

IPC分类号： C09K3/00

CPC分类号： G02B1/08 ,  C30B15/12 ,  C30B29/30 ,  G02B1/02 ,  G02B3/00

摘要： An optical material includes lithium tantalate, and a molar composition ratio of lithium oxide and tantalum oxide (Li2O/Ta2O5) in the lithium tantalate is in the range of 0.975 to 0.982. Since an optical material having a high refractive index is provided in an optical unit, at the same focal distance, a lens thickness can be significantly reduced. As a result, an optical electronic component and an optical electronic device including the optical material has a reduced size and thickness and is highly functional.

摘要翻译： 光学材料包括钽酸锂，并且钽酸锂中的氧化锂和氧化钽（Li 2 O / Ta 2 O 5）的摩尔组成比在0.975至0.982的范围内。 由于在光学单元中设置了具有高折射率的光学材料，所以在相同的焦距下，可以显着地减小透镜厚度。 结果，包括光学材料的光学电子部件和光学电子器件具有减小的尺寸和厚度并且具有高功能性。

公开(公告)号：US07446930B2

公开(公告)日：2008-11-04

申请号：US10575271

申请日：2004-11-10

申请人： Kenji Kitamura ,  Sunao Kurimura ,  Masaru Nakamura ,  Shunji Takekawa ,  Kazuya Terabe ,  Shunichi Hishida ,  Tamaki Shimura

发明人： Kenji Kitamura ,  Sunao Kurimura ,  Masaru Nakamura ,  Shunji Takekawa ,  Kazuya Terabe ,  Shunichi Hishida ,  Tamaki Shimura

IPC分类号： G02F1/35 ,  G02F2/02

CPC分类号： G02F1/3558 ,  G02F2202/20

摘要： A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same.A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dcont1 than the defect density Dferro of a ferroelectric single crystal (Dferro

摘要翻译： 要解决的问题是提供一种在施加电压的可控时间内在铁电单晶中形成短周期的畴反转区域的方法和使用其的光波长转换元件。 其解决方法通过形成（i）具有比铁电单晶（D）的缺陷密度D 更大的缺陷密度D 的控制层来解决该问题 或者形成（ii）具有比铁电单晶的格点的次序小的点阵次数的控制层， 垂直于铁电单晶中的铁电单晶的偏振方向的面。

公开(公告)号：US06989055B2

公开(公告)日：2006-01-24

申请号：US10634858

申请日：2003-08-06

申请人： Kenji Kitamura ,  Shigeki Kato ,  Hitoshi Maki ,  Shoko Goto ,  Motoi Shitaka ,  Osamu Shiromaru

发明人： Kenji Kitamura ,  Shigeki Kato ,  Hitoshi Maki ,  Shoko Goto ,  Motoi Shitaka ,  Osamu Shiromaru

IPC分类号： C09B67/08

CPC分类号： C09D11/037 ,  C09B41/003 ,  C09B63/005

摘要： A monoazo lake pigment composition containing a monoazo lake pigment obtained from a laked pigment aqueous slurry prepared by conducting coupling of a diazo component obtained by diazotizing an aromatic amine having a soluble group and a coupler component and conducting laking after or simultaneously with the coupling, wherein the laking is carried out in the presence of a water-soluble acrylic polymer in an amount of 0.1 to 40 parts by weight per 100 parts of the above coupler component, and a gravure ink containing the above pigment composition and a gravure ink vehicle.

摘要翻译： 一种单偶氮色淀颜料组合物，其含有通过将通过重氮化具有可溶性基团的芳族胺和偶合剂组分获得的重氮组分并在偶合之后或与耦合同时进行的沉淀而制备的浸渍颜料含水浆料中获得的单偶氮颜料，其中 在水溶性丙烯酸类聚合物存在下，每100份上述成色剂成分为0.1〜40重量份，含有上述颜料组合物的凹版油墨和凹版油墨载色剂进行浸渍。

公开(公告)号：US06747787B2

公开(公告)日：2004-06-08

申请号：US09797596

申请日：2001-03-05

申请人： Yasunori Furukawa ,  Kenji Kitamura ,  Shunji Takekawa ,  Masaru Nakamura

发明人： Yasunori Furukawa ,  Kenji Kitamura ,  Shunji Takekawa ,  Masaru Nakamura

IPC分类号： G02F1355

CPC分类号： G02F1/0027 ,  G02F1/292 ,  G02F1/3534 ,  G02F1/3558 ,  G02F1/3775 ,  G02F1/39 ,  G02F2202/20

摘要： An optically functional device comprising a ferroelectric single crystal substrate and polarization-inverted structures formed at portions of the substrate at a temperature of not higher than the Curie temperature by an electron beam scanning irradiation method or a voltage application method and designed to control light passed through the polarization-inverted portions, wherein a LiNbO3 crystal having a molar ratio of Li/Nb within a range of from 0.95 to 1.01, is used as the substrate, so that the propagation loss of light passed through the polarization-inverted portions immediately after formation of the polarization-inverted structures, is not more than 2%.

摘要翻译： 一种光功能元件，其特征在于，具有强电介质单晶基板和通过电子束扫描照射法或电压施加方法在不高于居里温度的温度下在基板的部分形成的偏振反转结构，并设计成控制通过的光 使用其中Li / Nb的摩尔比在0.95〜1.01的范围内的LiNbO 3晶体作为基板，使得在形成之后立即通过偏振反转部分的光的传播损耗为偏振反转部分 的极化反转结构不大于2％。

公开(公告)号：US06740935B2

公开(公告)日：2004-05-25

申请号：US10195339

申请日：2002-07-15

申请人： Kenji Kitamura

发明人： Kenji Kitamura

IPC分类号： H01L2362

CPC分类号： H01L21/76218 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a gate-insulating film formed on a semiconductor substrate. Gate electrodes comprised of P- and N-type polysilicon thin films and thin conductive films are formed over the gate-insulating film. The P- and N-type polysilicon thin films are doped with impurities at an impurity concentration sufficient to prevent depletion layers from being formed in the P- and N-type polysilicon thin films when a voltage is applied between each of the conductive thin films and the semiconductor substrate. Source and drain regions are formed over the semiconductor substrate in spaced-apart relation to one another and on opposite sides of the gate electrodes.

摘要翻译： 半导体器件具有形成在半导体衬底上的栅极绝缘膜。 在栅极绝缘膜上形成由P型和N型多晶硅薄膜构成的栅电极和薄导电膜。 P型和N型多晶硅薄膜掺杂有杂质浓度的杂质，其杂质浓度足以防止当在每个导电薄膜和/或多晶硅薄膜之间施加电压时在P型和N型多晶硅薄膜中形成耗尽层 半导体衬底。 源极和漏极区域形成在半导体衬底上彼此间隔开并且在栅电极的相对侧上。

公开(公告)号：US06673330B1

公开(公告)日：2004-01-06

申请号：US09521899

申请日：2000-03-09

申请人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

发明人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

IPC分类号： C01D1500

CPC分类号： C30B15/12 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/10

摘要： A single crystal of lithium niobate or lithium tantalate may be grown from a melt of a composition having a molar excess of Li compared to a melt having the stoichiometric amount of lithium, and having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/(Ta2O5+Li2O) within a range of at least 0.490 and less than 0.500. The single crystal also has at least one element selected from the group consisting of Mg, Zn, Sc and In, in an amount of from 0.1 to 3.0 mol % based on the total amount of the elements, Nb and Li, or the total amount of the elements, Ta and Li.

摘要翻译： 铌酸锂或钽酸锂的单晶可以从具有摩尔过量的Li的组合物的熔体与具有化学计量的锂的熔体相比生长，并且具有Li 2 O /（Nb 2 O 5 + Li 2 O）或Li 2 O的摩尔分数 /（Ta2O5 + Li2O）在0.490以上且小于0.500的范围内。 单晶还具有选自Mg，Zn，Sc和In中的至少一种元素，相对于元素的总量，Nb和Li为0.1〜3.0摩尔％，或者总量 的元素，Ta和Li。

公开(公告)号：US06499572B2

公开(公告)日：2002-12-31

申请号：US09813322

申请日：2001-03-21

申请人： Tatsuya Masamura ,  Kenji Kitamura

发明人： Tatsuya Masamura ,  Kenji Kitamura

IPC分类号： F16F934

CPC分类号： F16F9/348 ,  F16F9/3235 ,  F16F9/3485

摘要： In a damping force generator for a hydraulic damper, the valve is protected from pressure rise in the damper and its durability is thereby enhanced. The damping force characteristics can be vary in stepwise fashion by providing a main leaf valve 21 and a sub-leaf valve which closes an opening 21A formed in the main leaf valve 21, and the approximate mid-point of the main leaf valve 21 is supported by a plurality of intermediate seat surfaces 16 from the side of a port 13. The outer circumference of a main leaf valve 64 is supported by an outer circumferential seat surface 62, and the outer circumference of a sub-leaf valve 65 extends outwards to the vicinity of a part where the outer circumference of the main leaf valve 64 and the outer circumferential seat surface 62 overlap.

摘要翻译： 在用于液压阻尼器的阻尼力发生器中，阀被保护以防止阻尼器中的压力升高，从而增强其耐用性。 阻尼力特性可以通过设置主叶片阀21和闭合形成在主叶片阀21中的开口21A的副叶片阀而逐步地变化，并且主叶片阀21的近似中点被支撑 通过从端口13侧的多个中间座位表面16构成。主叶片阀64的外周由外圆周座表面62支撑，副叶片阀65的外周向外延伸至 主叶片阀64和外周座表面62的外周重叠的部分附近。

公开(公告)号：US06469074B1

公开(公告)日：2002-10-22

申请号：US09577612

申请日：2000-05-25

申请人： Hirohisa Hino ,  Taro Fukui ,  Kenji Kitamura ,  Shinji Hashimoto ,  Naoki Kanagawa

发明人： Hirohisa Hino ,  Taro Fukui ,  Kenji Kitamura ,  Shinji Hashimoto ,  Naoki Kanagawa

IPC分类号： C08K336

CPC分类号： C08G73/065 ,  C08G59/4014 ,  C08G59/4284 ,  Y10T428/31511

摘要： Disclosed is a liquid epoxy resin composition for sealing a semiconductor device which comprises (A) a cyanic acid ester, (B) an epoxy resin, (C) an inorganic filler, (D) a metal chelate and/or a metal salt, and at least one of (E1) an acid anhydride, (E2) a dihydrazide compound and (F) a silicone resin gel, wherein at least one of components A and B is liquid at room temperature, component E1 is liquid at room temperature, and the weight ratio of component C to the total weight of the composition, the weight ratio of component A to component B, and the weight ratio of component E1, E2 or F to the total weight of the composition except component C each ranges a specific ratio.

摘要翻译： 公开了一种用于密封半导体器件的液体环氧树脂组合物，其包含（A）氰酸酯，（B）环氧树脂，（C）无机填料，（D）金属螯合物和/或金属盐，以及 （E1）酸酐，（E2）二酰肼化合物和（F）有机硅树脂凝胶中的至少一种，其中组分A和B中的至少一种在室温下为液体，组分E1在室温下为液体， 组分C与组合物总重量的重量比，组分A与组分B的重量比以及组分E1，E2和F与组合物除外的组合物总重量的重量比分别为特定比例 。

公开(公告)号：US06369409B1

公开(公告)日：2002-04-09

申请号：US08689867

申请日：1996-08-15

申请人： Hiroaki Takasu ,  Jun Osanai ,  Kenji Kitamura

发明人： Hiroaki Takasu ,  Jun Osanai ,  Kenji Kitamura

IPC分类号： F02K900

CPC分类号： H01L28/20 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0802 ,  H01L27/1203

摘要： It is an object to provide a highly precise bleeder resistance circuit having an accurate voltage division ratio and a small temperature coefficient of the resistance value and a highly precise semiconductor device having a small temperature coefficient using such a bleeder resistance circuit, e.g., a semiconductor device such as a voltage detector and a voltage regulator. Such characteristic features that the potential of electric conductors on the thin film resistors and electric conductors under the thin film resistors of a bleeder resistance circuit using thin film resistors is made almost equal to the potential of respective thin film resistors and that, when polysilicon is used in the thin film resistor, the dispersion of the resistance value is controlled and the temperature dependency of the resistance value is made lower by thinning the film thickness of the polysilicon thin film resistor are constituted.

摘要翻译： 本发明的目的是提供具有精确的分压比和较小的电阻值温度系数的高精度放电电阻电路，以及使用这种泄放电阻电路（例如半导体器件）具有较小温度系数的高精度半导体器件 例如电压检测器和电压调节器。 使用薄膜电阻器的泄放电阻电路的薄膜电阻器和薄膜电阻器下方的电导体的电位与各薄膜电阻器的电位几乎相等的特征在于，当使用多晶硅时 在薄膜电阻器中，控制电阻值的分散，并且通过使多晶硅薄膜电阻器的膜厚变薄来降低电阻值的温度依赖性。

公开(公告)号：US5324066A

公开(公告)日：1994-06-28

申请号：US986291

申请日：1992-12-07

申请人： Tatsuya Masamura ,  Kenji Kitamura ,  Koji Takase ,  Ken Mizumukai

发明人： Tatsuya Masamura ,  Kenji Kitamura ,  Koji Takase ,  Ken Mizumukai

IPC分类号： B60G17/015 ,  B60G17/016 ,  F16F9/46

CPC分类号： B60G17/0152 ,  B60G17/016 ,  F16F9/468 ,  B60G2400/102 ,  B60G2400/20 ,  B60G2500/102 ,  B60G2600/16 ,  B60G2600/85

摘要： The posture of a vehicle is controlled using a specific variable damping force damper without the necessity of changing over the variable damping force damper frequently and at a high rate and without using a vehicle height sensor. A variable damping force damper U having at least two change-over modes including a mode in which the compression side damping force is soft when the extension side damping force is hard and another mode in which the compression side damping force is hard when the extension side damping force is soft is interposed between a vehicle body D and a wheel E. The variable damping force damper U is changed over by means of an acceleration sensor J mounted on the vehicle body D and a controller M including an integrator P for converting a signal from the acceleration sensor J into a velocity signal and a calculation processing circuit Q for outputting a changing over signal to the variable damping force damper U in accordance with the velocity signal from the integrator P.

摘要翻译： 使用特定的可变阻尼力阻尼器控制车辆的姿势，而不需要频繁地且以高速度改变可变减振力阻尼器，而不使用车辆高度传感器。 具有至少两个转换模式的可变阻尼力阻尼器U，包括当延伸侧阻尼力较硬时压缩侧阻尼力软的模式，当延伸侧具有压缩侧阻尼力较硬时的另一模式 阻尼力介于车体D和车轮E之间。可变减震力阻尼器U通过安装在车体D上的加速度传感器J和包括用于转换信号的积分器P的控制器M进行切换 从加速度传感器J输入速度信号，以及计算处理电路Q，用于根据来自积分器P的速度信号向变阻尼阻尼器U输出切换信号。