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    Composition of cyanate ester, epoxy resin and acid anhydride
    1.
    发明授权
    Composition of cyanate ester, epoxy resin and acid anhydride 有权
    氰酸酯，环氧树脂和酸酐的组成

    公开(公告)号：US06469074B1

    公开(公告)日：2002-10-22

    申请号：US09577612

    申请日：2000-05-25

    申请人： Hirohisa Hino ,  Taro Fukui ,  Kenji Kitamura ,  Shinji Hashimoto ,  Naoki Kanagawa

    发明人： Hirohisa Hino ,  Taro Fukui ,  Kenji Kitamura ,  Shinji Hashimoto ,  Naoki Kanagawa

    IPC分类号： C08K336

    CPC分类号： C08G73/065 ,  C08G59/4014 ,  C08G59/4284 ,  Y10T428/31511

    摘要： Disclosed is a liquid epoxy resin composition for sealing a semiconductor device which comprises (A) a cyanic acid ester, (B) an epoxy resin, (C) an inorganic filler, (D) a metal chelate and/or a metal salt, and at least one of (E1) an acid anhydride, (E2) a dihydrazide compound and (F) a silicone resin gel, wherein at least one of components A and B is liquid at room temperature, component E1 is liquid at room temperature, and the weight ratio of component C to the total weight of the composition, the weight ratio of component A to component B, and the weight ratio of component E1, E2 or F to the total weight of the composition except component C each ranges a specific ratio.

    摘要翻译： 公开了一种用于密封半导体器件的液体环氧树脂组合物，其包含（A）氰酸酯，（B）环氧树脂，（C）无机填料，（D）金属螯合物和/或金属盐，以及 （E1）酸酐，（E2）二酰肼化合物和（F）有机硅树脂凝胶中的至少一种，其中组分A和B中的至少一种在室温下为液体，组分E1在室温下为液体， 组分C与组合物总重量的重量比，组分A与组分B的重量比以及组分E1，E2和F与组合物除外的组合物总重量的重量比分别为特定比例 。

    Seal coating mask for semiconductor element and method of use thereof
    2.
    发明授权
    Seal coating mask for semiconductor element and method of use thereof 有权
    用于半导体元件的密封涂层掩模及其使用方法

    公开(公告)号：US06224674B1

    公开(公告)日：2001-05-01

    申请号：US09317616

    申请日：1999-05-25

    申请人： Hirohisa Hino ,  Taro Fukui ,  Kenji Kitamura

    发明人： Hirohisa Hino ,  Taro Fukui ,  Kenji Kitamura

    IPC分类号： B05C1706

    CPC分类号： H01L21/56 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2924/01039 ,  H01L2924/00014

    摘要： Seal coating mask for semiconductor element and method of use thereof with a seal coating mask with an opening located at a position where a semiconductor element is mounted on a wiring board. The coating mask has an annular protrusion formed along the whole periphery of the opening. A clearance of about 0.01 to 0.5 mm is formed between at least a part of the whole periphery of the annular protrusion and the front surface of the wiring board. The coating mask also includes a space portion formed on the back of the seal coating mask for cutting off cooling material outside of the annular protrusion. The coating mask is used to forcibly coat a material for sealing the semiconductor element in the front surface of the wiring board.

    摘要翻译： 用于半导体元件的密封涂层掩模及其使用方法，其中密封涂层掩模具有位于布线板上的半导体元件安装位置的开口。 涂层掩模具有沿着开口的整个周边形成的环形突起。 在环形突起的整个周边的至少一部分和布线基板的前表面之间形成约0.01至0.5mm的间隙。 涂覆掩模还包括形成在密封涂层掩模的背面上的空间部分，用于切除环形突起外部的冷却材料。 涂布掩模用于强制地涂覆用于密封布线板的前表面中的半导体元件的材料。

    Method for forming polarization reversal
    5.
    发明申请
    Method for forming polarization reversal 有权
    形成极化反转的方法

    公开(公告)号：US20110206860A1

    公开(公告)日：2011-08-25

    申请号：US13066744

    申请日：2011-04-22

    申请人： Futoshi Yamamoto ,  Junichiro Ichikawa ,  Satoshi Oikawa ,  Sunao Kurimura ,  Kenji Kitamura

    发明人： Futoshi Yamamoto ,  Junichiro Ichikawa ,  Satoshi Oikawa ,  Sunao Kurimura ,  Kenji Kitamura

    IPC分类号： B29C71/04

    CPC分类号： G02F1/3558 ,  Y10T29/4902

    摘要： A method for forming a ferroelectric spontaneous polarization reversal includes the steps of forming a convexo-concave structure on a top face of a ferroelectric substrate firstly, and then forming a ferroelectric spontaneous polarization region on the substrate including one portion of a convex portion, with a concave portion being formed on the bottom face of the substrate within a region where a ferroelectric spontaneous polarization reversal is to be formed and the convex portion is formed, and then applying an electric field into the substrate. The depth of the concave portion on the bottom face of the substrate may be greater than the height of the convex portion on the top face of the substrate. The width of the concave portion on the bottom face of the substrate may be wider than width of said convex portion on the top face of the substrate.

    摘要翻译： 形成铁电自发极化反转的方法包括以下步骤：首先在铁电体的顶面上形成凸凹结构，然后在包括凸部的一部分的基板上形成铁电自发极化区域， 在要形成铁电自发极化反转的区域和形成凸部的区域中，在基板的底面上形成凹部，然后向基板施加电场。 基板的底面上的凹部的深度可以大于基板的顶面上的凸部的高度。 基板的底面上的凹部的宽度可以比基板的顶面上的凸部的宽度宽。

    Method for forming polarization reversal
    6.
    发明申请
    Method for forming polarization reversal 有权
    形成极化反转的方法

    公开(公告)号：US20110197432A1

    公开(公告)日：2011-08-18

    申请号：US13066737

    申请日：2011-04-22

    申请人： Futoshi Yamamoto ,  Junichiro Ichikawa ,  Satoshi Oikawa ,  Sunao Kurimura ,  Kenji Kitamura

    发明人： Futoshi Yamamoto ,  Junichiro Ichikawa ,  Satoshi Oikawa ,  Sunao Kurimura ,  Kenji Kitamura

    IPC分类号： H01F7/06

    CPC分类号： G02F1/3558 ,  Y10T29/4902

    摘要： A method for forming a ferroelectric spontaneous polarization reversal in a desired region of a ferroelectric substrate includes the steps of forming, for the desired region of the surface of the ferroelectric substrate, an electrode pattern or a mask pattern composed of aggregates of micropatterns, and then applying a given voltage into the desired region. The configuration of the micropatterns can be a stripe-shaped pattern, an ellipse-shaped pattern, a hexagon-shaped pattern, a network pattern, or a double cross shaped pattern. The method can further include the steps of generating many nucleuses by using the electrode pattern or the mask pattern composed of the aggregates of micropatterns, forming another electrode pattern or another mask pattern corresponding to the desired region, and then applying a given voltage into the desired region to generate a ferroelectric spontaneous polarization reversal around the nucleuses.

    摘要翻译： 在铁电基板的所需区域中形成铁电自发极化反转的方法包括以下步骤：对于铁电体基板的表面的期望区域，形成由微图案的聚集体构成的电极图案或掩模图案，然后 将给定电压施加到所需区域。 微图案的构造可以是条形图案，椭圆形图案，六边形图案，网状图案或双十字形图案。 该方法还可以包括通过使用由微图案的聚集体形成的电极图案或掩模图案，形成另一电极图案或对应于期望区域的另一掩模图案，然后将给定电压施加到期望的 区域以产生围绕核的铁电自发极化反转。

    Wavelength conversion element having multi-gratings and light generating apparatus using said element, and wavelength conversion element having cylindrical ferroelectric single crystals and light generating apparatus using said element
    8.
    发明申请
    Wavelength conversion element having multi-gratings and light generating apparatus using said element, and wavelength conversion element having cylindrical ferroelectric single crystals and light generating apparatus using said element 失效
    具有多光栅的波长转换元件和使用所述元件的发光装置，以及具有圆柱形铁电单晶体的波长转换元件和使用所述元件的发光装置

    公开(公告)号：US20070127107A1

    公开(公告)日：2007-06-07

    申请号：US10575535

    申请日：2004-11-19

    申请人： Kenji Kitamura ,  Sunao Kurimura ,  Masaru Nakamura ,  Shunji Takekawa

    发明人： Kenji Kitamura ,  Sunao Kurimura ,  Masaru Nakamura ,  Shunji Takekawa

    IPC分类号： G02B26/00 ,  G02F1/00 ,  G02F1/01

    CPC分类号： G02F1/37 ,  G02F2001/3507 ,  G02F2001/3548 ,  G02F2202/20

    摘要： A wavelength conversion element having multi-gratings free from damage propagation and a light generating apparatus using it, and a wavelength conversion element having multi-gratings to make a thermal distribution centrosymmetric, and being free from damage propagation, are provided. The wavelength conversion element is realized by comprising a holder and plural prismatic ferroelectric single crystals disposed in the holder, wherein plural prismatic ferroelectric single crystals have at least five planes; the aspect ratios of planes perpendicular to respective longitudinal directions of the plural prismatic ferroelectric single crystals are virtually unity; and each of the plural prismatic ferroelectric single crystals has a domain inversion structure with a predetermined period in the direction perpendicular to the polarization direction thereof, and is arranged in a way that said direction perpendicular to the polarization direction is the same as those of the other crystals. In addition, the element is realized by selecting ferroelectric material from a group comprising lithium niobate, lithium tantalate, impurity-doped lithium niobate, and impurity-doped lithium tantalate, each with virtually stoichiometric composition, and processing it into the cylindrical ferroelectric single crystal with a virtually completely round cross-section.

    摘要翻译： 提供了具有不受损伤传播的多光栅的波长转换元件和使用它的发光装置，以及具有多光栅以实现热分布中心对称，并且没有损伤传播的波长转换元件。 波长转换元件通过包括保持器和设置在保持器中的多个棱柱铁电单晶实现，其中多个棱柱铁电单晶具有至少五个平面; 垂直于多个棱柱铁电单晶的纵向方向的平面的纵横比实际上是一致的; 并且多个棱柱铁电单晶中的每一个具有在垂直于其偏振方向的方向上具有预定周期的畴反转结构，并且以与偏振方向垂直的方向与其他方向相同的方式 晶体。 此外，该元件通过从包含铌酸锂，钽酸锂，杂质掺杂的铌酸锂和杂质掺杂的钽酸锂的组中选择铁电材料来实现，每个具有实质上的化学计量组成，并且将其加工成圆柱形铁电单晶， 一个几乎完全圆形的横截面。

    Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal
    10.
    发明授权
    Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal 有权
    铌酸锂或钽酸锂的单晶及其光学元件，以及用于生产氧化物单晶的工艺和设备

    公开(公告)号：US06464777B2

    公开(公告)日：2002-10-15

    申请号：US09754187

    申请日：2001-01-05

    申请人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

    发明人： Kenji Kitamura ,  Yasunori Furukawa ,  Shunji Takekawa ,  Shigeyuki Kimura

    IPC分类号： C30B1500

    CPC分类号： C30B15/12 ,  C30B15/00 ,  C30B29/30 ,  Y10T117/10

    摘要： A stoichiometric single crystal of lithium niobate or lithium tantalate is produced by pulling a single crystal of lithium niobate or lithium tantalate having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/ (Ta2O5+Li2O) of at least 0.490 and less than 0.500, from a melt of a composition having a molar excess of Li over a stoichiometric composition of lithium niobate or lithium tantalate. The single crystal has 0.1 to 3 mol % of at least one element selected from the group consisting of Mg, Zn, Sc and In based on a total amount of elements Nb and Li, or a total amount of elements Ta and Li. The single crystal has substantially no absorption in the visible light region.

    摘要翻译： 铌酸锂或钽酸锂的化学计量单晶通过将具有至少0.490摩尔分数的Li 2 O /（Nb 2 O 5 + Li 2 O）或Li 2 O /（Ta 2 O 5 + Li 2 O）的摩尔分数的铌酸锂或钽酸锂的单晶拉伸并且小于 0.500，来自具有摩尔过量的Li的组合物的熔体，其化学计量组成为铌酸锂或钽酸锂。 基于元素Nb和Li的总量或元素Ta和Li的总量，单晶具有选自Mg，Zn，Sc和In中的至少一种元素的0.1至3mol％。 单晶在可见光区域基本上没有吸收。