公开(公告)号：US20070037400A1

公开(公告)日：2007-02-15

申请号：US11495706

申请日：2006-07-31

Applicant: Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

Inventor： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/32134

Abstract: Embodiments of the invention provide a composition adapted to remove polysilicon. The composition comprises about 1.0 to 10 percent by weight of alkylammonium hydroxide, about 0.1 to 5.0 percent by weight of hydrogen peroxide, and water.

Abstract translation: 本发明的实施方案提供了适于去除多晶硅的组合物。 该组合物包含约1.0-10重量％的烷基氢氧化铵，约0.1-5.0重量％的过氧化氢和水。

公开(公告)号：US20070000523A1

公开(公告)日：2007-01-04

申请号：US11454829

申请日：2006-06-19

Applicant: Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

Inventor： Se-Yeon Kim ,  Pil-Kwon Jun ,  Jung-Dae Park ,  Myoung-Ok Han ,  Jea-Wook Kim ,  Seung-Ki Chae ,  Kook-Joo Kim ,  Jae-Seok Lee ,  Yong-Kyun Ko ,  Kwang-Shin Lim ,  Yang-Koo Lee

IPC: B08B3/04

CPC classification number: H01L21/02071 ,  C11D3/0073 ,  C11D7/10 ,  C11D7/3209 ,  C11D11/0023 ,  H01L27/10885

Abstract: A cleaning composition is disclosed. The cleaning composition comprises about 80 to 99.8999 percent by weight of an ammonium fluoride aqueous solution, about 0.1 to 5 percent by weight of a buffering agent, and about 0.0001 to 15 percent by weight of a corrosion-inhibiting agent. A method of preparing the cleaning composition, a method of cleaning a substrate using the cleaning composition, and a method of manufacturing a semiconductor device using the cleaning composition are also disclosed.

Abstract translation: 公开了一种清洁组合物。 该清洗组合物含有约80-99.8999重量％的氟化铵水溶液，约0.1-5重量％的缓冲剂和约0.0001-15重量％的腐蚀抑制剂。 还公开了一种制备清洁组合物的方法，使用清洁组合物清洁基材的方法，以及使用该清洁组合物制造半导体器件的方法。

公开(公告)号：US5782984A

公开(公告)日：1998-07-21

申请号：US30339

申请日：1998-02-25

Applicant: Kwang-shin Lim ,  Sang-o Park

Inventor： Kwang-shin Lim ,  Sang-o Park

IPC: B08B3/08 ,  C11D3/39 ,  C11D7/08 ,  C11D7/26 ,  C11D7/60 ,  C11D11/00 ,  C23G5/02 ,  H01L21/304 ,  H01L21/306 ,  H05K3/26 ,  C03C15/00

CPC classification number: H01L21/02052 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/261 ,  H05K3/26 ,  Y10S134/902

Abstract: A method for cleaning an integrated circuit substrate comprises cleaning the integrated circuit substrate by contacting the integrated circuit substrate with an aqueous cleaning composition. The aqueous cleaning composition comprises from about 0.1 to about 2 percent of hydrogen fluoride based on the volume of the composition, from about 9 to about 15 percent of hydrogen peroxide based on the volume of the composition, and from about 41 to about 47 percent of a C.sub.1 to C.sub.6 alcohol based on the volume of the composition.

Abstract translation: 一种用于清洁集成电路衬底的方法包括通过使集成电路衬底与含水清洁组合物接触来清洁集成电路衬底。 基于组合物的体积，含水清洗组合物包含约0.1至约2％的氟化氢，基于组合物体积的约9至约15％的过氧化氢和约41％至约47％的过氧化氢 基于组合物的体积的C1至C6醇。