公开(公告)号：US5883060A

公开(公告)日：1999-03-16

申请号：US108890

申请日：1998-07-01

Applicant: Kwang-shin Lim ,  Sang-o Park

Inventor： Kwang-shin Lim ,  Sang-o Park

IPC: B08B3/08 ,  C11D3/39 ,  C11D7/08 ,  C11D7/26 ,  C11D7/60 ,  C11D11/00 ,  C23G5/02 ,  H01L21/304 ,  H01L21/306 ,  H05K3/26 ,  C11D9/04

CPC classification number: H01L21/02052 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/261 ,  H05K3/26 ,  Y10S134/902

Abstract: An aqueous cleaning composition comprises from about 0.1 to about 2 percent of hydrogen fluoride based on the volume of the composition, from about 9 to about 15 percent of hydrogen peroxide based on the volume of the composition, and from about 41 to about 47 percent of C.sub.1 to C.sub.6 alcohol based on the volume of the composition. The aqueous cleaning composition may be advantageous in that it offers increased cleaning efficiency and less corrosion in comparison to conventional cleaning solutions.

Abstract translation: 基于组合物的体积，含水清洁组合物包含约0.1至约2％的氟化氢，基于组合物体积的约9至约15％的过氧化氢，以及约41至约47％的过氧化氢 C1至C6醇基于组合物的体积。 水性清洁组合物的优点在于与常规的清洁溶液相比，其提供了更高的清洁效率和更少的腐蚀。

公开(公告)号：US5782984A

公开(公告)日：1998-07-21

申请号：US30339

申请日：1998-02-25

Applicant: Kwang-shin Lim ,  Sang-o Park

Inventor： Kwang-shin Lim ,  Sang-o Park

IPC: B08B3/08 ,  C11D3/39 ,  C11D7/08 ,  C11D7/26 ,  C11D7/60 ,  C11D11/00 ,  C23G5/02 ,  H01L21/304 ,  H01L21/306 ,  H05K3/26 ,  C03C15/00

CPC classification number: H01L21/02052 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/261 ,  H05K3/26 ,  Y10S134/902

Abstract: A method for cleaning an integrated circuit substrate comprises cleaning the integrated circuit substrate by contacting the integrated circuit substrate with an aqueous cleaning composition. The aqueous cleaning composition comprises from about 0.1 to about 2 percent of hydrogen fluoride based on the volume of the composition, from about 9 to about 15 percent of hydrogen peroxide based on the volume of the composition, and from about 41 to about 47 percent of a C.sub.1 to C.sub.6 alcohol based on the volume of the composition.

Abstract translation: 一种用于清洁集成电路衬底的方法包括通过使集成电路衬底与含水清洁组合物接触来清洁集成电路衬底。 基于组合物的体积，含水清洗组合物包含约0.1至约2％的氟化氢，基于组合物体积的约9至约15％的过氧化氢和约41％至约47％的过氧化氢 基于组合物的体积的C1至C6醇。

公开(公告)号：US06232239B1

公开(公告)日：2001-05-15

申请号：US09141207

申请日：1998-08-26

Applicant: Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

Inventor： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

IPC: H01L21338

CPC classification number: H01L21/76804 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

Abstract: A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.

Abstract translation: 一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。 该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤 的去离子水。 这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。

公开(公告)号：US6071827A

公开(公告)日：2000-06-06

申请号：US136139

申请日：1998-08-18

Applicant: Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

Inventor： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/00

CPC classification number: H01L21/02071 ,  H01L21/02063

Abstract: A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.

Abstract translation: 一种用于制造半导体器件的方法，包括去除光致抗蚀剂并在除去光致抗蚀剂之后清洁衬底。 用于制造半导体器件的方法包括使用干蚀刻工艺去除残留在半导体衬底上的光致抗蚀剂。 随后使用包含25至35重量％的异丙醇（IPA），2.0至4.0重量％的过氧化氢（H 2 O 2），0.05至0.25重量％的氢氟酸（HF）的混合物和 去离子水的剩余重量百分比。

公开(公告)号：US07311857B2

公开(公告)日：2007-12-25

申请号：US10962508

申请日：2004-10-13

Applicant: Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

Inventor： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

IPC: C09K13/04

CPC classification number: C09K13/08 ,  C11D1/008 ,  C11D1/72 ,  C11D3/042 ,  C11D3/046 ,  C11D11/0047 ,  H01L21/31111

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract translation: 示例性的蚀刻组合物包括约0.1至8重量％的氟化氢，约10至25重量％的氟化铵，约0.0001至3重量％的非离子聚合物表面活性剂和水。 在湿蚀刻工艺中使用组合物，可以选择性地除去氧化物层，同时可以有效地钝化包括多晶硅的图案或存储电极。 可以以高蚀刻选择性去除氧化物层，同时最小化对多晶硅层的损伤。

公开(公告)号：US20050081883A1

公开(公告)日：2005-04-21

申请号：US10962508

申请日：2004-10-13

Applicant: Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

Inventor： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

IPC: C08K13/08 ,  B08B3/08 ,  C09K13/08 ,  C11D1/00 ,  C11D1/72 ,  C11D3/02 ,  C11D11/00 ,  C23F1/16 ,  C23F1/24 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8242 ,  H01L27/108

CPC classification number: C09K13/08 ,  C11D1/008 ,  C11D1/72 ,  C11D3/042 ,  C11D3/046 ,  C11D11/0047 ,  H01L21/31111

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract translation: 示例性的蚀刻组合物包括约0.1至8重量％的氟化氢，约10至25重量％的氟化铵，约0.0001至3重量％的非离子聚合物表面活性剂和水。 在湿蚀刻工艺中使用组合物，可以选择性地除去氧化物层，同时可以有效地钝化包括多晶硅的图案或存储电极。 可以以高蚀刻选择性去除氧化物层，同时最小化对多晶硅层的损伤。